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ZXMN6A08GQTA

ZXMN6A08GQTA Diodes Incorporated


ZXMN6A08GQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.61 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMN6A08GQTA Diodes Incorporated

Description: MOSFET N-CH 60V 3.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V, Qualification: AEC-Q101.

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ZXMN6A08GQTA ZXMN6A08GQTA Diodes Incorporated ZXMN6A08GQ.pdf MOSFETs MOSFET BVDSS 41V 60V
auf Bestellung 1003 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.11 EUR
10+1.33 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.63 EUR
2000+0.53 EUR
5000+0.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08GQTA ZXMN6A08GQTA Diodes Incorporated ZXMN6A08GQ.pdf Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08GQTA ZXMN6A08GQ.pdf
ZXMN6A08GQTA
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS 41V 60V
auf Bestellung 1003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.33 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.63 EUR
2000+0.53 EUR
5000+0.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08GQTA ZXMN6A08GQ.pdf
ZXMN6A08GQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH