ZXMN6A11GTA Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.49 EUR |
| 2000+ | 0.43 EUR |
| 5000+ | 0.38 EUR |
| 10000+ | 0.37 EUR |
| 25000+ | 0.33 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN6A11GTA Diodes Zetex
Description: MOSFET N-CH 60V 3.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V.
Weitere Produktangebote ZXMN6A11GTA nach Preis ab 0.35 EUR bis 2.75 EUR
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ZXMN6A11GTA | Diodes Zetex |
 Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Zetex |
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V |
auf Bestellung 325000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11GTA | Diodes Zetex |
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 142000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V |
auf Bestellung 325393 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
MOSFETs 60V N-Chnl UMOS |
auf Bestellung 1801 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN6A11GTA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.5 EUR |
| 2000+ | 0.44 EUR |
| 5000+ | 0.39 EUR |
| 10000+ | 0.38 EUR |
| 25000+ | 0.35 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.55 EUR |
| 12000+ | 0.49 EUR |
| 24000+ | 0.44 EUR |
| 36000+ | 0.4 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 325000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.57 EUR |
| 2000+ | 0.52 EUR |
| 3000+ | 0.5 EUR |
| 5000+ | 0.48 EUR |
| 7000+ | 0.46 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 142000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.68 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Description: MOSFET N-CH 60V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 325393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
MOSFETs 60V N-Chnl UMOS
MOSFETs 60V N-Chnl UMOS
auf Bestellung 1801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.29 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.77 EUR |