ZXMN6A11GTA Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.48 EUR |
| 2000+ | 0.43 EUR |
| 5000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
| 25000+ | 0.33 EUR |
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Produktbewertung abgeben
Technische Details ZXMN6A11GTA Diodes Zetex
Description: MOSFET N-CH 60V 3.1A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN6A11GTA nach Preis ab 0.35 EUR bis 2.56 EUR
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ZXMN6A11GTA | Diodes Zetex |
 Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Zetex |
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
auf Bestellung 325000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11GTA | Diodes Zetex |
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 142000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 325393 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11GTA | Diodes Incorporated |
MOSFETs 60V N-Chnl UMOS |
auf Bestellung 2620 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN6A11GTA |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.5 EUR |
| 2000+ | 0.44 EUR |
| 5000+ | 0.39 EUR |
| 10000+ | 0.37 EUR |
| 25000+ | 0.35 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.54 EUR |
| 12000+ | 0.49 EUR |
| 24000+ | 0.44 EUR |
| 36000+ | 0.4 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 325000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.57 EUR |
| 2000+ | 0.52 EUR |
| 3000+ | 0.5 EUR |
| 5000+ | 0.48 EUR |
| 7000+ | 0.46 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 3.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 142000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.68 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 3.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 325393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| ZXMN6A11GTA |
|
Hersteller: Diodes Incorporated
MOSFETs 60V N-Chnl UMOS
MOSFETs 60V N-Chnl UMOS
auf Bestellung 2620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.56 EUR |
| 10+ | 1.61 EUR |
| 100+ | 1.07 EUR |