ZXMN6A11GTA Diodes Incorporated

Description: MOSFET N-CH 60V 3.1A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).