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ZXMN6A25DN8TA

ZXMN6A25DN8TA Diodes Incorporated

ZXMN6A25DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 325000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.05 EUR
1000+0.95 EUR
1500+0.91 EUR
2500+0.88 EUR
3500+0.85 EUR
5000+0.83 EUR
Mindestbestellmenge: 500
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Technische Details ZXMN6A25DN8TA Diodes Incorporated

Description: MOSFET 2N-CH 60V 3.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote ZXMN6A25DN8TA nach Preis ab 0.90 EUR bis 2.96 EUR

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ZXMN6A25DN8TA ZXMN6A25DN8TA Hersteller : Diodes Incorporated ZXMN6A25DN8.pdf MOSFETs Dl 60V N-Chnl UMOS
auf Bestellung 3698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.38 EUR
100+1.21 EUR
500+0.98 EUR
1000+0.90 EUR
Mindestbestellmenge: 2
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ZXMN6A25DN8TA ZXMN6A25DN8TA Hersteller : Diodes Incorporated ZXMN6A25DN8.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 325727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
11+1.65 EUR
100+1.32 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A25DN8TA ZXMN6A25DN8.pdf
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
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