ZXMN6A25K
Hersteller:
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details ZXMN6A25K
Description: MOSFET N-CH 60V 7A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.11W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN6A25K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ZXMN6A25K | Diodes Incorporated |
Description: MOSFET N-CH 60V 7A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.11W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
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ZXMN6A25K | Diodes Incorporated |
Description: MOSFET N-CH 60V 7A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.11W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
ZXMN6A25K | Diodes Incorporated |
MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN6A25K |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25K |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A25K |
|
Hersteller: Diodes Incorporated
MOSFET
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH