ZXMN7A11GQTA Diodes Inc./Zetex
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Technische Details ZXMN7A11GQTA Diodes Inc./Zetex
Description: MOSFET BVDSS: 61V~100V SOT223 T&, Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 70 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN7A11GQTA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ZXMN7A11GQTA | Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V SOT223 T&Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Drain to Source Voltage (Vdss): 70 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZXMN7A11GQTA | Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V~100V SOT223 T&R 1K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZXMN7A11GQTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT223 T&
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V SOT223 T&
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN7A11GQTA |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 61V~100V SOT223 T&R 1K
MOSFET MOSFET BVDSS: 61V~100V SOT223 T&R 1K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH