auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMP10A16KTC Diodes Zetex
Description: MOSFET P-CH 100V 3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V.
Weitere Produktangebote ZXMP10A16KTC nach Preis ab 0.45 EUR bis 1.55 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ZXMP10A16KTC | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 100V 3A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V |
auf Bestellung 380000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Zetex | Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2278 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Zetex | Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2278 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Incorporated | MOSFET P-Chan 100V MOSFET (UMOS) |
auf Bestellung 3050 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 100V 3A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V |
auf Bestellung 382825 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Zetex | Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
ZXMP10A16KTC | Hersteller : Diodes Inc | Trans MOSFET P-CH 100V 4.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
ZXMP10A16KTC | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.7A; 4.24W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.7A Power dissipation: 4.24W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.285Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
ZXMP10A16KTC | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.7A; 4.24W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.7A Power dissipation: 4.24W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.285Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |