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Technische Details ZXMP10A16KTC Diodes Zetex
Description: MOSFET P-CH 100V 3A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.15W (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMP10A16KTC nach Preis ab 0.64 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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ZXMP10A16KTC | Diodes Zetex |
 Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2128 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A16KTC | Diodes Incorporated |
Description: MOSFET P-CH 100V 3A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.15W (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A16KTC | Diodes Zetex |
Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2128 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A16KTC | Diodes Incorporated |
MOSFETs P-Chan 100V MOSFET (UMOS) |
auf Bestellung 3735 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A16KTC | Diodes Incorporated |
Description: MOSFET P-CH 100V 3A TO252-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.15W (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V |
auf Bestellung 41123 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMP10A16KTC |
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Hersteller: Diodes Zetex
Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.65 EUR |
| ZXMP10A16KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.71 EUR |
| 5000+ | 0.67 EUR |
| 7500+ | 0.64 EUR |
| ZXMP10A16KTC |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 100V 3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.83 EUR |
| 1000+ | 0.73 EUR |
| ZXMP10A16KTC |
|
Hersteller: Diodes Incorporated
MOSFETs P-Chan 100V MOSFET (UMOS)
MOSFETs P-Chan 100V MOSFET (UMOS)
auf Bestellung 3735 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.74 EUR |
| ZXMP10A16KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 3A TO252-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Description: MOSFET P-CH 100V 3A TO252-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
auf Bestellung 41123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.74 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |