ZXMP10A17E6QTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.52 EUR |
| 6000+ | 0.48 EUR |
| 9000+ | 0.47 EUR |
| 15000+ | 0.46 EUR |
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Technische Details ZXMP10A17E6QTA Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMP10A17E6QTA nach Preis ab 0.48 EUR bis 2.06 EUR
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ZXMP10A17E6QTA | Diodes Incorporated |
 MOSFETs MOSFET BVDSS61V-100V |
auf Bestellung 4320 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17E6QTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 1.3A SOT26 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 145964 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMP10A17E6QTA |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS61V-100V
MOSFETs MOSFET BVDSS61V-100V
auf Bestellung 4320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| ZXMP10A17E6QTA |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 1.3A SOT26
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 145964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 14+ | 1.29 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |