ZXMP10A17GQTA Diodes Zetex
auf Bestellung 73000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.57 EUR |
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Technische Details ZXMP10A17GQTA Diodes Zetex
Description: MOSFET P-CH 100V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote ZXMP10A17GQTA nach Preis ab 0.5 EUR bis 2.66 EUR
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ZXMP10A17GQTA | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 100V 2.4A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 74000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17GQTA | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 2867 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17GQTA | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 100V 2.4A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 74363 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17GQTA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMP10A17GQTA - Leistungs-MOSFET, p-Kanal, 100 V, 1.7 A, 0.35 ohm, SOT-223, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXMP10A17GQTA | Hersteller : DIODES INCORPORATED |
ZXMP10A17GQTA SMD P channel transistors |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMP10A17GQTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 100V 1.7A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMP10A17GQTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 100V 1.7A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMP10A17GQTA | Hersteller : Diodes Inc |
Trans MOSFET P-CH 100V 1.7A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |