ZXMP10A17GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.69 EUR |
| 2000+ | 0.63 EUR |
| 3000+ | 0.6 EUR |
| 5000+ | 0.56 EUR |
| 7000+ | 0.55 EUR |
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Technische Details ZXMP10A17GTA Diodes Incorporated
Description: MOSFET P-CH 100V 1.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V.
Weitere Produktangebote ZXMP10A17GTA nach Preis ab 0.55 EUR bis 2.37 EUR
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ZXMP10A17GTA | Diodes Incorporated |
MOSFETs 100V P-Chnl UMOS |
auf Bestellung 1222 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 1.7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V |
auf Bestellung 7008 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMP10A17GTA | DIODES/ZETEX |
Transistor P-Channel MOSFET; 100V; 20V; 450mOhm; 2,4A; 3,9W; -55°C ~ 150°C; ZXMP10A17GTA TZXMP10a17g Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| ZXMP10A17GTA |
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Hersteller: Diodes Incorporated
MOSFETs 100V P-Chnl UMOS
MOSFETs 100V P-Chnl UMOS
auf Bestellung 1222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.44 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 2000+ | 0.57 EUR |
| 5000+ | 0.55 EUR |
| ZXMP10A17GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Description: MOSFET P-CH 100V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 7008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| ZXMP10A17GTA |
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Hersteller: DIODES/ZETEX
Transistor P-Channel MOSFET; 100V; 20V; 450mOhm; 2,4A; 3,9W; -55°C ~ 150°C; ZXMP10A17GTA TZXMP10a17g
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 100V; 20V; 450mOhm; 2,4A; 3,9W; -55°C ~ 150°C; ZXMP10A17GTA TZXMP10a17g
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.2 EUR |