ZXMP10A18K Diodes Incorporated

Description: MOSFET P-CH 100V 3.8A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.17W (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).