ZXMP6A18KTC
Produktcode: 99657
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote ZXMP6A18KTC nach Preis ab 0.7 EUR bis 2.76 EUR
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ZXMP6A18KTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 6.8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A18KTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 6.8A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V |
auf Bestellung 6527 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A18KTC | Diodes Incorporated |
MOSFETs 60V P-Channel 6.8A MOSFET |
auf Bestellung 16323 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.7 EUR |
| ZXMP6A18KTC |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 6527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 11+ | 1.73 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
| ZXMP6A18KTC |
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Hersteller: Diodes Incorporated
MOSFETs 60V P-Channel 6.8A MOSFET
MOSFETs 60V P-Channel 6.8A MOSFET
auf Bestellung 16323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 1.76 EUR |