ZXTC6717MCQTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 15V/12V W-DFN3020
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: W-DFN3020-8
Frequency - Transition: 120MHz, 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A
Voltage - Collector Emitter Breakdown (Max): 15V, 12V
Current - Collector (Ic) (Max): 4.5A, 4A
Power - Max: 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP Complementary
Mounting Type: Surface Mount
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Technische Details ZXTC6717MCQTA Diodes Incorporated
Description: TRANS NPN/PNP 15V/12V W-DFN3020, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Supplier Device Package: W-DFN3020-8, Frequency - Transition: 120MHz, 110MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A, Voltage - Collector Emitter Breakdown (Max): 15V, 12V, Current - Collector (Ic) (Max): 4.5A, 4A, Power - Max: 1.13W, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 1 NPN, 1 PNP Complementary, Mounting Type: Surface Mount.
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|---|---|---|---|---|---|
| ZXTC6717MCQTA | Diodes Incorporated |
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| ZXTC6717MCQTA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor U-DFN3020-8 T&R 3K
Bipolar Transistors - BJT SS Low Sat Transistor U-DFN3020-8 T&R 3K
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH