ZXTN19100CGTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 5.5A SOT-223-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 550mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Supplier Device Package: SOT-223-3
Frequency - Transition: 150MHz
| Anzahl | Preis |
|---|---|
| 1000+ | 0.54 EUR |
| 2000+ | 0.5 EUR |
| 3000+ | 0.47 EUR |
| 5000+ | 0.45 EUR |
| 7000+ | 0.43 EUR |
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Technische Details ZXTN19100CGTA Diodes Incorporated
Description: TRANS NPN 100V 5.5A SOT-223-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 430mV @ 550mA, 5.5A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Power - Max: 3 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 5.5 A, Part Status: Active, Supplier Device Package: SOT-223-3, Frequency - Transition: 150MHz.
Weitere Produktangebote ZXTN19100CGTA nach Preis ab 0.5 EUR bis 1.87 EUR
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ZXTN19100CGTA | Diodes Incorporated |
Bipolar Transistors - BJT NPN 100V 5.5A |
auf Bestellung 1876 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN19100CGTA | Diodes Incorporated |
Description: TRANS NPN 100V 5.5A SOT-223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 430mV @ 550mA, 5.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3 W |
auf Bestellung 7538 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ZXTN19100CGTA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN 100V 5.5A
Bipolar Transistors - BJT NPN 100V 5.5A
auf Bestellung 1876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.34 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.5 EUR |
| ZXTN19100CGTA |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 5.5A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 550mA, 5.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3 W
Description: TRANS NPN 100V 5.5A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 550mA, 5.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3 W
auf Bestellung 7538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.87 EUR |
| 16+ | 1.17 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |