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Technische Details ZXTN2010ASTZ Diodes Zetex
Description: TRANS NPN 60V 4.5A E-LINE, Packaging: Tape & Reel (TR), Package / Case: E-Line-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V, Frequency - Transition: 130MHz, Supplier Device Package: E-Line (TO-92 compatible), Part Status: Active, Current - Collector (Ic) (Max): 4.5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 710 mW.
Weitere Produktangebote ZXTN2010ASTZ nach Preis ab 0.7 EUR bis 3.01 EUR
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ZXTN2010ASTZ | Diodes Zetex |
 Trans GP BJT NPN 60V 4.5A 710mW 3-Pin E-Line T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTN2010ASTZ | Diodes Incorporated |
Description: TRANS NPN 60V 4.5A E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 710 mW |
auf Bestellung 1938 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN2010ASTZ | Diodes Incorporated |
Bipolar Transistors - BJT 60V NPN Low Sat |
auf Bestellung 2381 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXTN2010ASTZ |
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Hersteller: Diodes Zetex
Trans GP BJT NPN 60V 4.5A 710mW 3-Pin E-Line T/R
Trans GP BJT NPN 60V 4.5A 710mW 3-Pin E-Line T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.7 EUR |
| ZXTN2010ASTZ |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 710 mW
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 710 mW
auf Bestellung 1938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| ZXTN2010ASTZ |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 60V NPN Low Sat
Bipolar Transistors - BJT 60V NPN Low Sat
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.01 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| 2000+ | 0.83 EUR |