ZXTN25100DGQTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 3A SOT-223-3
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-223-3
| Anzahl | Preis |
|---|---|
| 1000+ | 0.62 EUR |
| 2000+ | 0.56 EUR |
| 3000+ | 0.54 EUR |
| 5000+ | 0.51 EUR |
| 7000+ | 0.49 EUR |
| 10000+ | 0.47 EUR |
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Technische Details ZXTN25100DGQTA Diodes Incorporated
Description: TRANS NPN 100V 3A SOT-223-3, Frequency - Transition: 175MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: SOT-223-3.
Weitere Produktangebote ZXTN25100DGQTA nach Preis ab 0.54 EUR bis 2.08 EUR
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ZXTN25100DGQTA | Diodes Incorporated |
Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm |
auf Bestellung 509 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN25100DGQTA | Diodes Incorporated |
Description: TRANS NPN 100V 3A SOT-223-3 Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: SOT-223-3 Frequency - Transition: 175MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 98981 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ZXTN25100DGQTA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.54 EUR |
| ZXTN25100DGQTA |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 3A SOT-223-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-223-3
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 3A SOT-223-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-223-3
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 98981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 14+ | 1.31 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |