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ZXTP2012A

ZXTP2012A Diodes Incorporated

ZXTP2012A.pdf Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A TO92-3
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 1255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.95 EUR
12+ 1.59 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
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Technische Details ZXTP2012A Diodes Incorporated

Description: TRANS PNP 60V 3.5A TO92-3, Packaging: Bulk, Package / Case: E-Line-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A, Current - Collector Cutoff (Max): 20nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V, Frequency - Transition: 120MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 3.5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W.

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ZXTP2012A ZXTP2012A Hersteller : Diodes Incorporated ZXTP2012A.pdf Description: TRANS PNP 60V 3.5A TO92-3
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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