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ZXTP2012ASTOA

ZXTP2012ASTOA Diodes Incorporated

ZXTP2012A.pdf Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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4000+0.33 EUR
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Technische Details ZXTP2012ASTOA Diodes Incorporated

Description: TRANS PNP 60V 3.5A E-LINE, Packaging: Tape & Reel (TR), Package / Case: E-Line-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V, Frequency - Transition: 120MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 3.5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W.

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ZXTP2012ASTOA ZXTP2012ASTOA Hersteller : Diodes Incorporated ZXTP2012A.pdf Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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