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QS120SCM80D2P QS120SCM80D2P Quest Semi QS120SCM802DP_updated.pdf?v=1711960352 Description: 1200V N-CHANNEL SIC MOSFET 80 M
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1001 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.31 EUR
10+13.91 EUR
250+13.54 EUR
500+12.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
QS1700SCM8 QS1700SCM8 Quest Semi QS170C800YL1700V.pdf?v=1700007868 Description: 1700v 8AMP SiC Mosfet
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.65 EUR
10+4.57 EUR
50+3.87 EUR
100+3.25 EUR
1000+2.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
QS50T45D QS50T45D Quest Semi QS50T45TD_3.pdf?v=1706659527 Description: Solar Schottky Diode
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
100+1.69 EUR
500+1.22 EUR
1000+1.07 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
QS50T45T QS50T45T Quest Semi QS50T45T_201b61be-490c-4189-b1d8-d7be1484aff3.pdf?v=1704155056 Description: DIODE SCHOTTKY 45V 50A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Current - Reverse Leakage @ Vr: 80 mA @ 45 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
100+2.17 EUR
500+1.86 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
QS65SCM65D2P QS65SCM65D2P Quest Semi Description: 650v 65amp SiC Mosfet D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.82 EUR
10+14.69 EUR
250+14.28 EUR
500+13.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
QS800SGL330A3S QS800SGL330A3S Quest Semi QS800SGL330A3S.pdf?v=1732140687 Description: 3300v 800amp IGBT
Packaging: Bag
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 800A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9.62 kW
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 125000 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+2321.09 EUR
3+2166.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD10HCS120U QSD10HCS120U Quest Semi QSD10HCS120U.pdf?v=1734046498 Description: 1200v 10amp SiC Schottky Barrier
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 770pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
50+2.89 EUR
100+2.86 EUR
500+2.55 EUR
1000+2.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
QSD10HCS500U QSD10HCS500U Quest Semi QSD10HCS500U_5000V_10A_5.pdf?v=1716916343 Description: 5000v 10amp Homogeneous SiC Scho
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+189.69 EUR
10+173.89 EUR
100+150.18 EUR
500+134.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD-10HCS500U QSD-10HCS500U Quest Semi QSD10HCS500U_5000V_10A_5_1_7897cf4a-444a-40b4-bfe7-ec74109e2273.pdf?v=1745833207 Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.63 EUR
10+60.35 EUR
100+55.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD12HCS65U QSD12HCS65U Quest Semi QSD12HCS65U_3.pdf?v=1716916812 Description: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.32 EUR
10+4.35 EUR
100+3.96 EUR
500+3.31 EUR
1000+3.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
QSD25HCS170U QSD25HCS170U Quest Semi Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
auf Bestellung 1233 Stücke:
Lieferzeit 10-14 Tag (e)
10+13.6 EUR
100+10.75 EUR
500+10.21 EUR
1000+10.2 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
QSD50HCS120U QSD50HCS120U Quest Semi Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.42 EUR
250+2.57 EUR
500+2.09 EUR
1000+1.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
QSD6HCS65U QSD6HCS65U Quest Semi QSD6HCS65U.pdf?v=1714436010 Description: DIODE SIL CARB 650V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
10+3.87 EUR
50+3.4 EUR
100+3.09 EUR
1000+3.06 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
QS-HCS500015 QS-HCS500015 Quest Semi Description: 5000V 10A 1.5Vf Homogeneous SiC
Packaging: Dispenser
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+7729.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QS120SCM80D2P QS120SCM802DP_updated.pdf?v=1711960352
QS120SCM80D2P
Hersteller: Quest Semi
Description: 1200V N-CHANNEL SIC MOSFET 80 M
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1001 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.31 EUR
10+13.91 EUR
250+13.54 EUR
500+12.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
QS1700SCM8 QS170C800YL1700V.pdf?v=1700007868
QS1700SCM8
Hersteller: Quest Semi
Description: 1700v 8AMP SiC Mosfet
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
10+4.57 EUR
50+3.87 EUR
100+3.25 EUR
1000+2.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
QS50T45D QS50T45TD_3.pdf?v=1706659527
QS50T45D
Hersteller: Quest Semi
Description: Solar Schottky Diode
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+1.69 EUR
500+1.22 EUR
1000+1.07 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
QS50T45T QS50T45T_201b61be-490c-4189-b1d8-d7be1484aff3.pdf?v=1704155056
QS50T45T
Hersteller: Quest Semi
Description: DIODE SCHOTTKY 45V 50A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Current - Reverse Leakage @ Vr: 80 mA @ 45 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+2.17 EUR
500+1.86 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
QS65SCM65D2P
QS65SCM65D2P
Hersteller: Quest Semi
Description: 650v 65amp SiC Mosfet D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.82 EUR
10+14.69 EUR
250+14.28 EUR
500+13.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
QS800SGL330A3S QS800SGL330A3S.pdf?v=1732140687
QS800SGL330A3S
Hersteller: Quest Semi
Description: 3300v 800amp IGBT
Packaging: Bag
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 800A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9.62 kW
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 125000 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2321.09 EUR
3+2166.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD10HCS120U QSD10HCS120U.pdf?v=1734046498
QSD10HCS120U
Hersteller: Quest Semi
Description: 1200v 10amp SiC Schottky Barrier
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 770pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
50+2.89 EUR
100+2.86 EUR
500+2.55 EUR
1000+2.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
QSD10HCS500U QSD10HCS500U_5000V_10A_5.pdf?v=1716916343
QSD10HCS500U
Hersteller: Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+189.69 EUR
10+173.89 EUR
100+150.18 EUR
500+134.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD-10HCS500U QSD10HCS500U_5000V_10A_5_1_7897cf4a-444a-40b4-bfe7-ec74109e2273.pdf?v=1745833207
QSD-10HCS500U
Hersteller: Quest Semi
Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.63 EUR
10+60.35 EUR
100+55.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
QSD12HCS65U QSD12HCS65U_3.pdf?v=1716916812
QSD12HCS65U
Hersteller: Quest Semi
Description: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
10+4.35 EUR
100+3.96 EUR
500+3.31 EUR
1000+3.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
QSD25HCS170U
QSD25HCS170U
Hersteller: Quest Semi
Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
auf Bestellung 1233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+13.6 EUR
100+10.75 EUR
500+10.21 EUR
1000+10.2 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
QSD50HCS120U
QSD50HCS120U
Hersteller: Quest Semi
Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
250+2.57 EUR
500+2.09 EUR
1000+1.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
QSD6HCS65U QSD6HCS65U.pdf?v=1714436010
QSD6HCS65U
Hersteller: Quest Semi
Description: DIODE SIL CARB 650V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+3.87 EUR
50+3.4 EUR
100+3.09 EUR
1000+3.06 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
QS-HCS500015
QS-HCS500015
Hersteller: Quest Semi
Description: 5000V 10A 1.5Vf Homogeneous SiC
Packaging: Dispenser
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7729.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH