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RM120N60T2 RM120N60T2 Rectron USA Description: MOSFET N-CH 60V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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1N5368B 1N5368B 1n5333b-1n5388b.pdf техническая информация Rectron USA Description: DIODE ZENER 47V 5W DO-15
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 5 W
Part Status: Active
Supplier Device Package: DO-15
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 25 Ohms
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RM5N60S4 RM5N60S4 Rectron USA Description: MOSFET N-CHANNEL 60V 5A SOT223-3
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM50N60IP RM50N60IP Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO251
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 60 V
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RM50N60T2 RM50N60T2 Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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RM50N60TI RM50N60TI Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
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RM50N60LD RM50N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RM50N60DF RM50N60DF Rectron USA Description: MOSFET N-CHANNEL 60V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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RM150N60T2 RM150N60T2 Rectron USA Description: MOSFET N-CH 60V 150A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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RM150N60HD RM150N60HD Rectron USA Description: MOSFET N-CH 60V 150A TO263-2
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RM9926 Rectron USA Description: MOSFET N-CH 20V SOP-8
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM3010 RM3010 Rectron USA Description: MOSFET N-CHANNEL 30V 10A 8SOP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RM10N40S8 RM10N40S8 Rectron USA Description: MOSFET 2 N-CHANNEL 40V 10A 8SOP
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
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RM10N100S8 Rectron USA Description: MOSFET N-CHANNEL 100V 10A 8SOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 50V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V
Power Dissipation (Max): 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM12N100S8 RM12N100S8 Rectron USA Description: MOSFET N-CHANNEL 100V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V
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RM1505S Rectron USA Description: MOSFET N-CH ST 150V SOP-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 100V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 75V
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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
DB157S-T DB157S-T db151s-db1512s.pdf Rectron USA Description: BRIDGE RECTIFIER 1.5A 1000V DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-S
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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RM1002 RM1002 Rectron USA Description: MOSFET N-CHANNEL 100V 2A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 75V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
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RM10N30D2 Rectron USA Description: MOSFET N-CHANNEL 30V 10A 6-PQFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-PQFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM10N100LD Rectron USA Description: MOSFET N-CH 100V 10A TO252-2
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM100N60T2 RM100N60T2 Rectron USA Description: MOSFET N-CH 60V 100A TO220-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
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RM100N30DF RM100N30DF Rectron USA Description: MOSFET N-CHANNEL 30V 100A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM100N65DF RM100N65DF Rectron USA Description: MOSFET N-CHANNEL 65V 100A 8DFN
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 142W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 25V
Vgs (Max): +20V, -12V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 65V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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RM100N60T7 RM100N60T7 Rectron USA Description: MOSFET N-CHANNEL 60V 100A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RM20N650TI RM20N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 20A TO220F
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Power Dissipation (Max): 33W (Tc)
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RM20N650T2 RM20N650T2 Rectron USA Description: MOSFET N-CH 650V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 25V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
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RM20N650HD RM20N650HD Rectron USA Description: MOSFET N-CH 650V 20A TO263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM2N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM2N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO251
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 10V
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RM120N40T2 RM120N40T2 Rectron USA Description: MOSFET N-CH 40V 120A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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RM47N650T7 RM47N650T7 Rectron USA Description: MOSFET N-CHANNEL 650V 47A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3111.9 pF @ 25 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
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BAV70 BAV70 baw56.bav70,bav99.pdf Rectron USA Description: DUAL SWITCHING DIODE COM CATHOD
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 70 V
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RMA4N60092 Rectron USA Description: MOSFET N-CHANNEL 600V 400MA TO92
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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HVM12 HVM12 hvm5-hvm16.pdf Rectron USA Description: DIODE GEN PURP 12000V 350MA HVM
Current - Reverse Leakage @ Vr: 5 µA @ 12000 V
Voltage - Forward (Vf) (Max) @ If: 14 V @ 350 mA
Voltage - DC Reverse (Vr) (Max): 12000 V
Part Status: Active
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: HVM
Current - Average Rectified (Io): 350mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
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FFM1400W ffm1000w-ffm1800w.pdf Rectron USA Description: DIODE GEN FAST HV 1400V .5A SMX
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMX
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1400V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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1.5KE18 1.5KE18 1.5ke.pdf Rectron USA Description: TVS DIODE 18VWM 26.5VC 1.5KE
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 18V
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RM110N82T2 RM110N82T2 Rectron USA Description: MOSFET N-CH 82V 110A TO220-3
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
Drain to Source Voltage (Vdss): 82 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
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RM135N100HD RM135N100HD Rectron USA Description: MOSFET N-CH 100V 135A TO263-2
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 50 V
Drain to Source Voltage (Vdss): 100 V
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RMA7P20ED1 RMA7P20ED1 Rectron USA Description: MOSFET P-CH 20V 700MA DFN1006-3
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 25V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM8N650T2 Rectron USA Description: MOSFET N-CHANNEL 650V 8A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 40V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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RM8N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 8A TO252-2
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
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RM8N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 8A TO220F
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 50V
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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RM8N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 8A TO251
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 50V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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RM8N650HD Rectron USA Description: MOSFET N-CHANNEL 650V 8A TO263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM1A4N150S6 RM1A4N150S6 Rectron USA Description: MOSFET N-CH 150V 1.4A SOT23-6
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
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HER305-T HER305-T her301-her308.pdf Rectron USA Description: DIODE HIGH EFF 600V 3A DO-201
Mounting Type: Through Hole
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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RM5N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 5A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 49W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM5N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 5A TO251
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 49W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 650V
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RM115N65T2 RM115N65T2 Rectron USA Description: MOSFET N-CH 65V 115A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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RM15N650TI RM15N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 15A TO220F
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 33.5W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
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RM15N650T2 RM15N650T2 Rectron USA Description: MOSFET N-CH 650V 15A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MMBD1503A MMBD1503A mmbd1503a.pdf Rectron USA Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
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HVP12 HVP12 hvp5-hvp16.pdf Rectron USA Description: DIODE GEN PURP 12000V 750MA HVP
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 12000V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 14V @ 750mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 12000V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: HVP
Operating Temperature - Junction: -55°C ~ 150°C
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R5000F R5000F r2500f-r5000f.pdf Rectron USA Description: DIODE GEN PURP 5000V 200MA DO15
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 6.5 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 5000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 200mA
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RM21N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33.8W (Tc)
Part Status: Active
Packaging: Tube
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RM21N650T2 Rectron USA Description: MOSFET N-CH 650V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 188W (Tc)
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RM21N650T7 Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO247
Package / Case: TO-247-3
Supplier Device Package: TO-247
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
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RM830 Rectron USA Description: MOSFET N-CHANNEL 500V 5A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 87.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
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RM2P60S2 RM2P60S2 Rectron USA Description: MOSFET P-CHANNEL 60V 1.9A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 358pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM40N100LD RM40N100LD Rectron USA Description: MOSFET N-CH 100V 40A TO252-2
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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RM40N40LD Rectron USA Description: MOSFET N-CHANNEL 40V 42A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM40N40D3 Rectron USA Description: MOSFET N-CHANNEL 40V 40A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2229pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SMA6J130A SMA6J130A sma6j.pdf Rectron USA Description: TVS DIO 600W 130V 187V UNI SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 130V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
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KBL410 KBL410 kbl401-kbl410.pdf Rectron USA Description: BRIDGE RECT GLASS 1000V 4A KBL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Tube
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RM140N82T2 RM140N82T2 Rectron USA Description: MOSFET N-CH 82V 140A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 40V
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 82V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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FR106-T FR106-T fr101-fr107.pdf Rectron USA Description: DIODE FAST 800V 1A DO-41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RM140N150T2 RM140N150T2 Rectron USA Description: MOSFET N-CH 150V 140A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 320W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 75V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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RM135N100T2 RM135N100T2 Rectron USA Description: MOSFET N-CH 100V 135A TO220-3
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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DRS205K DRS205K drs201k-drs207k.pdf Rectron USA Description: BRIDGE RECT GLASS 600V 2A DK3
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: D3K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
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FM2000W FM2000W fm1200w-fm2000w.pdf Rectron USA Description: DIODE GEN PURP 2000V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 2000 V
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RM3401 RM3401 Rectron USA Description: MOSFET P-CHANNEL 30V 4.2A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM3407 RM3407 Rectron USA Description: MOSFET P-CHANNEL 30V 4.3A SOT23
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
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RM3416 RM3416 Rectron USA Description: MOSFET N-CHANNEL 20V 6.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 50V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM11N800T2 RM11N800T2 Rectron USA Description: MOSFET N-CH 800V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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RM11N800TI RM11N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 11A TO220F
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33.8W (Tc)
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RM3010S6 RM3010S6 Rectron USA Description: MOSFET N-CHANNEL 30V 10A SOT23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
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RM3003S6 RM3003S6 Rectron USA Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: TSOT-23-6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
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RM3075S8(N) RM3075S8(N) Rectron USA Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM30P30D3 RM30P30D3 Rectron USA Description: MOSFET P-CHANNEL 30V 30A 8DFN
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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RM30P55LD RM30P55LD Rectron USA Description: MOSFET P-CHANNEL 55V 30A TO252-2
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RM30N100LD RM30N100LD Rectron USA Description: MOSFET N-CH 100V 30A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
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RM30N100T2 RM30N100T2 Rectron USA Description: MOSFET N-CH 100V 30A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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RM30N250DF RM30N250DF Rectron USA Description: MOSFET N-CHANNEL 250V 29A 8DFN
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1584pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM50N150DF Rectron USA Description: MOSFET N-CHANNEL 150V 50A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
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RM150N100ADF RM150N100ADF Rectron USA Description: MOSFET N-CHANNEL 100V 128A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 50 V
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RM150N100T2 RM150N100T2 Rectron USA Description: MOSFET N-CH 100V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
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RM150N100HD RM150N100HD Rectron USA Description: MOSFET N-CH 100V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
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RM150N150HD Rectron USA Description: MOSFET N-CH 150V 150A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 75V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 320W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RL1N1800F rl1n1000f-rl1n1800f.pdf Rectron USA Description: DIODE GEN PURP 1800V 1A A405
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Package / Case: Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
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RM1A5N30S3AE RM1A5N30S3AE Rectron USA Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 144mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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RM6A5N30S6 Rectron USA Description: MOSFET N-CH 32V 6.5A SOT23-6
Power Dissipation (Max): 2.7W (Ta)
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 32V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM25N30DN Rectron USA Description: MOSFET N-CHANNEL 30V 25A 8DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3x3)
Package / Case: 8-PowerVDFN
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RM35N30DN Rectron USA Description: MOSFET N-CHANNEL 30V 35A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN-EP (3x3)
Package / Case: 8-PowerVDFN
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RM35N30DF Rectron USA Description: MOSFET N-CHANNEL 30V 35A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 50V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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RM185N30DF Rectron USA Description: MOSFET N-CHANNEL 30V 185A 8DFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 15V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Drain to Source Voltage (Vdss): 30V
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 15V
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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RM130N200T2 RM130N200T2 Rectron USA Description: MOSFET N-CH 200V 132A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
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RM130N200HD RM130N200HD Rectron USA Description: MOSFET N-CH 200V 132A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM130N200T7 RM130N200T7 Rectron USA Description: MOSFET N-CHANNEL 200V 132A TO247
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
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RL1N1500F RL1N1500F rl1n1000f-rl1n1800f.pdf Rectron USA Description: DIODE GEN PURP 1500V 1A A405
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Rectron USA
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RM110N85T2 RM110N85T2 Rectron USA Description: MOSFET N-CH 85V 110A TO220-3
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 40 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
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RM120N60T2
RM120N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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1N5368B техническая информация 1n5333b-1n5388b.pdf
1N5368B
Hersteller: Rectron USA
Description: DIODE ZENER 47V 5W DO-15
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 5 W
Part Status: Active
Supplier Device Package: DO-15
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 25 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4854 Stücke - Preis und Lieferfrist anzeigen
RM5N60S4
RM5N60S4
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 5A SOT223-3
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N60IP
RM50N60IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO251
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N60T2
RM50N60T2
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N60TI
RM50N60TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N60LD
RM50N60LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N60DF
RM50N60DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM150N60T2
RM150N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 150A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM150N60HD
RM150N60HD
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 150A TO263-2
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM9926
Hersteller: Rectron USA
Description: MOSFET N-CH 20V SOP-8
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM3010
RM3010
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 10A 8SOP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM10N40S8
RM10N40S8
Hersteller: Rectron USA
Description: MOSFET 2 N-CHANNEL 40V 10A 8SOP
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM10N100S8
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 10A 8SOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 50V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V
Power Dissipation (Max): 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM12N100S8
RM12N100S8
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM1505S
Hersteller: Rectron USA
Description: MOSFET N-CH ST 150V SOP-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 100V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 75V
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
DB157S-T db151s-db1512s.pdf
DB157S-T
Hersteller: Rectron USA
Description: BRIDGE RECTIFIER 1.5A 1000V DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-S
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM1002
RM1002
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 2A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 75V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM10N30D2
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 10A 6-PQFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-PQFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM10N100LD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 10A TO252-2
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM100N60T2
RM100N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 100A TO220-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM100N30DF
RM100N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 100A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM100N65DF
RM100N65DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 65V 100A 8DFN
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 142W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 25V
Vgs (Max): +20V, -12V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 65V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM100N60T7
RM100N60T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 100A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM20N650TI
RM20N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 20A TO220F
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Power Dissipation (Max): 33W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM20N650T2
RM20N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 25V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM20N650HD
RM20N650HD
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM2N650LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM2N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO251
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 10V
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RM120N40T2
RM120N40T2
Hersteller: Rectron USA
Description: MOSFET N-CH 40V 120A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM47N650T7
RM47N650T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 47A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3111.9 pF @ 25 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV70 baw56.bav70,bav99.pdf
BAV70
Hersteller: Rectron USA
Description: DUAL SWITCHING DIODE COM CATHOD
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RMA4N60092
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 400MA TO92
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HVM12 hvm5-hvm16.pdf
HVM12
Hersteller: Rectron USA
Description: DIODE GEN PURP 12000V 350MA HVM
Current - Reverse Leakage @ Vr: 5 µA @ 12000 V
Voltage - Forward (Vf) (Max) @ If: 14 V @ 350 mA
Voltage - DC Reverse (Vr) (Max): 12000 V
Part Status: Active
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: HVM
Current - Average Rectified (Io): 350mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FFM1400W ffm1000w-ffm1800w.pdf
Hersteller: Rectron USA
Description: DIODE GEN FAST HV 1400V .5A SMX
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMX
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1400V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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1.5KE18 1.5ke.pdf
1.5KE18
Hersteller: Rectron USA
Description: TVS DIODE 18VWM 26.5VC 1.5KE
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 18V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM110N82T2
RM110N82T2
Hersteller: Rectron USA
Description: MOSFET N-CH 82V 110A TO220-3
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
Drain to Source Voltage (Vdss): 82 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM135N100HD
RM135N100HD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 135A TO263-2
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 50 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RMA7P20ED1
RMA7P20ED1
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 700MA DFN1006-3
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
Package / Case: SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 25V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM8N650T2
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 40V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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RM8N650LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO252-2
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
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RM8N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220F
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 50V
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
RM8N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO251
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 50V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
RM8N650HD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM1A4N150S6
RM1A4N150S6
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 1.4A SOT23-6
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HER305-T her301-her308.pdf
HER305-T
Hersteller: Rectron USA
Description: DIODE HIGH EFF 600V 3A DO-201
Mounting Type: Through Hole
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM5N650LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 5A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 49W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
RM5N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 5A TO251
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 49W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 650V
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Lieferzeit 21-28 Tag (e)
RM115N65T2
RM115N65T2
Hersteller: Rectron USA
Description: MOSFET N-CH 65V 115A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM15N650TI
RM15N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 15A TO220F
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 33.5W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM15N650T2
RM15N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 15A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD1503A mmbd1503a.pdf
MMBD1503A
Hersteller: Rectron USA
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 115021 Stücke - Preis und Lieferfrist anzeigen
HVP12 hvp5-hvp16.pdf
HVP12
Hersteller: Rectron USA
Description: DIODE GEN PURP 12000V 750MA HVP
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 12000V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 14V @ 750mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 12000V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: HVP
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
R5000F r2500f-r5000f.pdf
R5000F
Hersteller: Rectron USA
Description: DIODE GEN PURP 5000V 200MA DO15
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 6.5 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 5000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM21N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33.8W (Tc)
Part Status: Active
Packaging: Tube
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM21N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 188W (Tc)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM21N650T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO247
Package / Case: TO-247-3
Supplier Device Package: TO-247
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM830
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 500V 5A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 87.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM2P60S2
RM2P60S2
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 60V 1.9A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 358pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM40N100LD
RM40N100LD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 40A TO252-2
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM40N40LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 40V 42A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM40N40D3
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 40V 40A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2229pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
SMA6J130A sma6j.pdf
SMA6J130A
Hersteller: Rectron USA
Description: TVS DIO 600W 130V 187V UNI SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 130V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBL410 kbl401-kbl410.pdf
KBL410
Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 1000V 4A KBL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29100 Stücke - Preis und Lieferfrist anzeigen
RM140N82T2
RM140N82T2
Hersteller: Rectron USA
Description: MOSFET N-CH 82V 140A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 40V
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 82V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FR106-T fr101-fr107.pdf
FR106-T
Hersteller: Rectron USA
Description: DIODE FAST 800V 1A DO-41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM140N150T2
RM140N150T2
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 140A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 320W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 75V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM135N100T2
RM135N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 135A TO220-3
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DRS205K drs201k-drs207k.pdf
DRS205K
Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 600V 2A DK3
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: D3K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FM2000W fm1200w-fm2000w.pdf
FM2000W
Hersteller: Rectron USA
Description: DIODE GEN PURP 2000V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 2000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM3401
RM3401
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 4.2A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM3407
RM3407
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 4.3A SOT23
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
RM3416
RM3416
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 20V 6.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 50V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)
RM11N800T2
RM11N800T2
Hersteller: Rectron USA
Description: MOSFET N-CH 800V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM11N800TI
RM11N800TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 11A TO220F
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33.8W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM3010S6
RM3010S6
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 10A SOT23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM3003S6
RM3003S6
Hersteller: Rectron USA
Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: TSOT-23-6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM3075S8(N)
RM3075S8(N)
Hersteller: Rectron USA
Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM30P30D3
RM30P30D3
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 30A 8DFN
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM30P55LD
RM30P55LD
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 55V 30A TO252-2
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM30N100LD
RM30N100LD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 30A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM30N100T2
RM30N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 30A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM30N250DF
RM30N250DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 250V 29A 8DFN
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1584pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM50N150DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 150V 50A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
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Lieferzeit 21-28 Tag (e)
RM150N100ADF
RM150N100ADF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 128A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM150N100T2
RM150N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM150N100HD
RM150N100HD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM150N150HD
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 150A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 75V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 320W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
RL1N1800F rl1n1000f-rl1n1800f.pdf
Hersteller: Rectron USA
Description: DIODE GEN PURP 1800V 1A A405
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Package / Case: Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
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Lieferzeit 21-28 Tag (e)
RM1A5N30S3AE
RM1A5N30S3AE
Hersteller: Rectron USA
Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 144mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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Lieferzeit 21-28 Tag (e)
RM6A5N30S6
Hersteller: Rectron USA
Description: MOSFET N-CH 32V 6.5A SOT23-6
Power Dissipation (Max): 2.7W (Ta)
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 32V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
RM25N30DN
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 25A 8DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3x3)
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM35N30DN
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 35A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN-EP (3x3)
Package / Case: 8-PowerVDFN
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Lieferzeit 21-28 Tag (e)
RM35N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 35A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 50V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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Lieferzeit 21-28 Tag (e)
RM185N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 185A 8DFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 15V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Drain to Source Voltage (Vdss): 30V
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 15V
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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Lieferzeit 21-28 Tag (e)
RM130N200T2
RM130N200T2
Hersteller: Rectron USA
Description: MOSFET N-CH 200V 132A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM130N200HD
RM130N200HD
Hersteller: Rectron USA
Description: MOSFET N-CH 200V 132A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM130N200T7
RM130N200T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 200V 132A TO247
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 429W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RL1N1500F rl1n1000f-rl1n1800f.pdf
RL1N1500F
Hersteller: Rectron USA
Description: DIODE GEN PURP 1500V 1A A405
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RM110N85T2
RM110N85T2
Hersteller: Rectron USA
Description: MOSFET N-CH 85V 110A TO220-3
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 40 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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