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RM170N30DF RM170N30DF Rectron USA rm170n30df.pdf Description: MOSFET N-CHANNEL 30V 170A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 85A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
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RM17N800HD RM17N800HD Rectron USA Description: MOSFET N-CH 800V 17A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM17N800T2 RM17N800T2 Rectron USA Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM17N800TI RM17N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM180N100T2 RM180N100T2 Rectron USA rm180n100t2.pdf Description: MOSFET N-CH 100V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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RM180N60T2 RM180N60T2 Rectron USA Description: MOSFET N-CH 60V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
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RM185N30DF RM185N30DF Rectron USA rm185n30df.pdf Description: MOSFET N-CHANNEL 30V 185A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 15 V
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RM18P100HDE Rectron USA Description: MOSFET P-CH 100V 18A TO263-2
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RM1A4N150S6 RM1A4N150S6 Rectron USA rm1a4n150s6.pdf Description: MOSFET N-CH 150V 1.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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RM1A5N30S3AE RM1A5N30S3AE Rectron USA Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
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RM2003 RM2003 Rectron USA Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
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RM2004NE RM2004NE Rectron USA Description: MOSFET 2 N-CH 20V 6A SOT23-6
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RM2020ES9 RM2020ES9 Rectron USA Description: MOSFET N&P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta), 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
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RM20N150LD RM20N150LD Rectron USA Description: MOSFET N-CH 150V 20A TO252-2
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RM20N60LD RM20N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 20A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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RM20N650HD RM20N650HD Rectron USA Description: MOSFET N-CH 650V 20A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
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RM20N650T2 RM20N650T2 Rectron USA Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
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RM20N650TI RM20N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
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RM210N75HD RM210N75HD Rectron USA Description: MOSFET N-CH 75V 210A TO263-2
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RM21N650T2 Rectron USA Description: MOSFET N-CH 650V 21A TO220-3
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RM21N650T7 Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO247
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RM21N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO220F
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RM21N700T2 RM21N700T2 Rectron USA rm21n700t2(ti).pdf Description: MOSFET N-CH 700V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
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RM21N700TI RM21N700TI Rectron USA rm21n700t2(ti).pdf Description: MOSFET N-CHANNEL 700V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
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RM2301 RM2301 Rectron USA Description: MOSFET P-CHANNEL 20V 3A SOT23
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RM2301E RM2301E Rectron USA Description: MOSFET P-CHANNEL 20V 2.6A SOT23
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RM2302 RM2302 Rectron USA Description: MOSFET N-CHANNEL 20V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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RM2303 RM2303 Rectron USA Description: MOSFET P-CHANNEL 30V 2A SOT23
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RM2304 RM2304 Rectron USA Description: MOSFET N-CHANNEL 30V 3.6A SOT23
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RM2305 RM2305 Rectron USA Description: MOSFET P-CH 20V 3A/4.1A SOT23
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RM2305B RM2305B Rectron USA Description: MOSFET P-CH 20V 3A/4.1A SOT23
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RM2306E RM2306E Rectron USA Description: MOSFET N-CHANNEL 30V 5.3A SOT23
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RM2308 RM2308 Rectron USA Description: MOSFET N-CHANNEL 60V 3A SOT23
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RM2309 RM2309 Rectron USA Description: MOSFET P-CHANNEL 30V 3.1A SOT23
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RM2309E RM2309E Rectron USA Description: MOSFET P-CHANNEL 30V SOT23
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RM2310 RM2310 Rectron USA Description: MOSFET N-CHANNEL 60V 3A SOT23
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RM2312 RM2312 Rectron USA Description: MOSFET N-CHANNEL 20V 4.5A SOT23
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RM2333 RM2333 Rectron USA rm2333.pdf Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
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RM2333A RM2333A Rectron USA rm2333a.pdf Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
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RM24N200TI RM24N200TI Rectron USA Description: MOSFET N-CHANNEL 220V 24A TO220F
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RM2520ES6 RM2520ES6 Rectron USA Description: MOSFET N&P-CH 25/20V SOT23-6
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RM25N30DN Rectron USA Description: MOSFET N-CHANNEL 30V 25A 8DFN
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RM25P30S8 Rectron USA Description: MOSFET P-CHANNEL 30V 25A 8SOP
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RM2A8N60S4 RM2A8N60S4 Rectron USA Description: MOSFET N-CH 60V 2.8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V
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RM2N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO251
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RM2N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO252-2
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RM2P60S2 RM2P60S2 Rectron USA Description: MOSFET P-CHANNEL 60V 1.9A SOT23
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RM3003S6 RM3003S6 Rectron USA rm3003s6.pdf Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA
Supplier Device Package: TSOT-23-6L
Part Status: Active
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RM3010 RM3010 Rectron USA rm3010.pdf Description: MOSFET N-CHANNEL 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
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RM3010S6 RM3010S6 Rectron USA rm3010s6.pdf Description: MOSFET N-CHANNEL 30V 10A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
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RM3075S8(N) RM3075S8(N) Rectron USA rm3075s8.pdf Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SOP
Part Status: Active
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RM30N100LD RM30N100LD Rectron USA rm30n100ld.pdf Description: MOSFET N-CH 100V 30A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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RM30N100T2 RM30N100T2 Rectron USA rm30n100t2.pdf Description: MOSFET N-CH 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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RM30N250DF RM30N250DF Rectron USA rm30n250df.pdf Description: MOSFET N-CHANNEL 250V 29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1584 pF @ 100 V
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RM30P30D3 RM30P30D3 Rectron USA rm30p30d3.pdf Description: MOSFET P-CHANNEL 30V 30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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RM30P55LD RM30P55LD Rectron USA rm30p55ld(1).PDF Description: MOSFET P-CHANNEL 55V 30A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
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RM3134 RM3134 Rectron USA Description: MOSFET 2 N-CH 20V 750MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
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RM3139K RM3139K Rectron USA rm3139k.pdf Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
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RM3400 RM3400 Rectron USA Description: MOSFET N-CHANNEL 30V 5.8A SOT23
auf Bestellung 1000000 Stücke:
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RM3401 RM3401 Rectron USA rm3401.pdf Description: MOSFET P-CHANNEL 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
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RM170N30DF rm170n30df.pdf
RM170N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 170A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 85A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
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RM17N800HD
RM17N800HD
Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM17N800T2
RM17N800T2
Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM17N800TI
RM17N800TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
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RM180N100T2 rm180n100t2.pdf
RM180N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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RM180N60T2
RM180N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
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RM185N30DF rm185n30df.pdf
RM185N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 185A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 15 V
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RM18P100HDE
Hersteller: Rectron USA
Description: MOSFET P-CH 100V 18A TO263-2
auf Bestellung 1000000 Stücke:
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RM1A4N150S6 rm1a4n150s6.pdf
RM1A4N150S6
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 1.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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RM1A5N30S3AE
RM1A5N30S3AE
Hersteller: Rectron USA
Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
auf Bestellung 1000000 Stücke:
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RM2003
RM2003
Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
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RM2004NE
RM2004NE
Hersteller: Rectron USA
Description: MOSFET 2 N-CH 20V 6A SOT23-6
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RM2020ES9
RM2020ES9
Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta), 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
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RM20N150LD
RM20N150LD
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 20A TO252-2
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RM20N60LD
RM20N60LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 20A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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RM20N650HD
RM20N650HD
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
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RM20N650T2
RM20N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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RM20N650TI
RM20N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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RM210N75HD
RM210N75HD
Hersteller: Rectron USA
Description: MOSFET N-CH 75V 210A TO263-2
Produkt ist nicht verfügbar
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RM21N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 21A TO220-3
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RM21N650T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO247
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RM21N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO220F
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RM21N700T2 rm21n700t2(ti).pdf
RM21N700T2
Hersteller: Rectron USA
Description: MOSFET N-CH 700V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
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RM21N700TI rm21n700t2(ti).pdf
RM21N700TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 700V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
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RM2301
RM2301
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 20V 3A SOT23
Produkt ist nicht verfügbar
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RM2301E
RM2301E
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 20V 2.6A SOT23
Produkt ist nicht verfügbar
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RM2302
RM2302
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 20V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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RM2303
RM2303
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 2A SOT23
Produkt ist nicht verfügbar
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RM2304
RM2304
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 3.6A SOT23
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RM2305
RM2305
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
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RM2305B
RM2305B
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
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RM2306E
RM2306E
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 5.3A SOT23
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RM2308
RM2308
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
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RM2309
RM2309
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 3.1A SOT23
Produkt ist nicht verfügbar
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RM2309E
RM2309E
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V SOT23
Produkt ist nicht verfügbar
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RM2310
RM2310
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
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RM2312
RM2312
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 20V 4.5A SOT23
Produkt ist nicht verfügbar
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RM2333 rm2333.pdf
RM2333
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
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RM2333A rm2333a.pdf
RM2333A
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
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RM24N200TI
RM24N200TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 220V 24A TO220F
Produkt ist nicht verfügbar
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RM2520ES6
RM2520ES6
Hersteller: Rectron USA
Description: MOSFET N&P-CH 25/20V SOT23-6
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RM25N30DN
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 25A 8DFN
Produkt ist nicht verfügbar
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RM25P30S8
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 25A 8SOP
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RM2A8N60S4
RM2A8N60S4
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 2.8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V
Produkt ist nicht verfügbar
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RM2N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO251
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RM2N650LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO252-2
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RM2P60S2
RM2P60S2
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 60V 1.9A SOT23
Produkt ist nicht verfügbar
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RM3003S6 rm3003s6.pdf
RM3003S6
Hersteller: Rectron USA
Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA
Supplier Device Package: TSOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
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RM3010 rm3010.pdf
RM3010
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Produkt ist nicht verfügbar
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RM3010S6 rm3010s6.pdf
RM3010S6
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 10A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
Produkt ist nicht verfügbar
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RM3075S8(N) rm3075s8.pdf
RM3075S8(N)
Hersteller: Rectron USA
Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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RM30N100LD rm30n100ld.pdf
RM30N100LD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 30A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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RM30N100T2 rm30n100t2.pdf
RM30N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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RM30N250DF rm30n250df.pdf
RM30N250DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 250V 29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1584 pF @ 100 V
Produkt ist nicht verfügbar
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RM30P30D3 rm30p30d3.pdf
RM30P30D3
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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RM30P55LD rm30p55ld(1).PDF
RM30P55LD
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 55V 30A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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RM3134
RM3134
Hersteller: Rectron USA
Description: MOSFET 2 N-CH 20V 750MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
Produkt ist nicht verfügbar
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RM3139K rm3139k.pdf
RM3139K
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Produkt ist nicht verfügbar
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RM3400
RM3400
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
auf Bestellung 1000000 Stücke:
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RM3401 rm3401.pdf
RM3401
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Produkt ist nicht verfügbar
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