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RM13P40S8 Rectron USA Description: MOSFET P-CHANNEL 40V 13A 8SOP
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM140N150T2 RM140N150T2 Rectron USA Description: MOSFET N-CH 150V 140A TO220-3
Produkt ist nicht verfügbar
RM140N82T2 RM140N82T2 Rectron USA rm140n82t2.pdf Description: MOSFET N-CH 82V 140A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 82 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 40 V
Produkt ist nicht verfügbar
RM1505S Rectron USA Description: MOSFET N-CH ST 150V SOP-8
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM150N100ADF RM150N100ADF Rectron USA Description: MOSFET N-CHANNEL 100V 128A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 50 V
Produkt ist nicht verfügbar
RM150N100HD RM150N100HD Rectron USA Description: MOSFET N-CH 100V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar
RM150N100T2 RM150N100T2 Rectron USA Description: MOSFET N-CH 100V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar
RM150N150HD RM150N150HD Rectron USA rm150n150hd.pdf Description: MOSFET N-CH 150V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Produkt ist nicht verfügbar
RM150N30LT2 RM150N30LT2 Rectron USA rm150n30lt2.pdf Description: MOSFET N-CH 30V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
RM150N60HD RM150N60HD Rectron USA Description: MOSFET N-CH 60V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar
RM150N60T2 RM150N60T2 Rectron USA Description: MOSFET N-CH 60V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar
RM15N650T2 RM15N650T2 Rectron USA Description: MOSFET N-CH 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
RM15N650TI RM15N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 33.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
RM16P60LD RM16P60LD Rectron USA Description: MOSFET P-CHANNEL 60V 16A TO252-2
Produkt ist nicht verfügbar
RM170N30DF RM170N30DF Rectron USA rm170n30df.pdf Description: MOSFET N-CHANNEL 30V 170A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 85A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
Produkt ist nicht verfügbar
RM17N800HD RM17N800HD Rectron USA Description: MOSFET N-CH 800V 17A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM17N800T2 RM17N800T2 Rectron USA Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM17N800TI RM17N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM180N100T2 RM180N100T2 Rectron USA rm180n100t2.pdf Description: MOSFET N-CH 100V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
RM180N60T2 RM180N60T2 Rectron USA Description: MOSFET N-CH 60V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
Produkt ist nicht verfügbar
RM185N30DF RM185N30DF Rectron USA rm185n30df.pdf Description: MOSFET N-CHANNEL 30V 185A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 15 V
Produkt ist nicht verfügbar
RM18P100HDE Rectron USA Description: MOSFET P-CH 100V 18A TO263-2
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM1A4N150S6 RM1A4N150S6 Rectron USA rm1a4n150s6.pdf Description: MOSFET N-CH 150V 1.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
RM1A5N30S3AE RM1A5N30S3AE Rectron USA Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2003 RM2003 Rectron USA Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
RM2004NE RM2004NE Rectron USA Description: MOSFET 2 N-CH 20V 6A SOT23-6
Produkt ist nicht verfügbar
RM2020ES9 RM2020ES9 Rectron USA Description: MOSFET N&P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta), 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
Produkt ist nicht verfügbar
RM20N150LD RM20N150LD Rectron USA Description: MOSFET N-CH 150V 20A TO252-2
Produkt ist nicht verfügbar
RM20N60LD RM20N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 20A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
Produkt ist nicht verfügbar
RM20N650HD RM20N650HD Rectron USA Description: MOSFET N-CH 650V 20A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM20N650T2 RM20N650T2 Rectron USA Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM20N650TI RM20N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM210N75HD RM210N75HD Rectron USA Description: MOSFET N-CH 75V 210A TO263-2
Produkt ist nicht verfügbar
RM21N650T2 Rectron USA Description: MOSFET N-CH 650V 21A TO220-3
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N650T7 Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO247
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 21A TO220F
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N700T2 RM21N700T2 Rectron USA rm21n700t2(ti).pdf Description: MOSFET N-CH 700V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
RM21N700TI RM21N700TI Rectron USA rm21n700t2(ti).pdf Description: MOSFET N-CHANNEL 700V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
RM2301 RM2301 Rectron USA Description: MOSFET P-CHANNEL 20V 3A SOT23
Produkt ist nicht verfügbar
RM2301E RM2301E Rectron USA Description: MOSFET P-CHANNEL 20V 2.6A SOT23
Produkt ist nicht verfügbar
RM2302 RM2302 Rectron USA Description: MOSFET N-CHANNEL 20V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
RM2303 RM2303 Rectron USA Description: MOSFET P-CHANNEL 30V 2A SOT23
Produkt ist nicht verfügbar
RM2304 RM2304 Rectron USA Description: MOSFET N-CHANNEL 30V 3.6A SOT23
Produkt ist nicht verfügbar
RM2305 RM2305 Rectron USA Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
RM2305B RM2305B Rectron USA Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
RM2306E RM2306E Rectron USA Description: MOSFET N-CHANNEL 30V 5.3A SOT23
Produkt ist nicht verfügbar
RM2308 RM2308 Rectron USA Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
RM2309 RM2309 Rectron USA Description: MOSFET P-CHANNEL 30V 3.1A SOT23
Produkt ist nicht verfügbar
RM2309E RM2309E Rectron USA Description: MOSFET P-CHANNEL 30V SOT23
Produkt ist nicht verfügbar
RM2310 RM2310 Rectron USA Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
RM2312 RM2312 Rectron USA Description: MOSFET N-CHANNEL 20V 4.5A SOT23
Produkt ist nicht verfügbar
RM2333 RM2333 Rectron USA rm2333.pdf Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
RM2333A RM2333A Rectron USA rm2333a.pdf Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
RM24N200TI RM24N200TI Rectron USA Description: MOSFET N-CHANNEL 220V 24A TO220F
Produkt ist nicht verfügbar
RM2520ES6 RM2520ES6 Rectron USA Description: MOSFET N&P-CH 25/20V SOT23-6
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM25N30DN Rectron USA Description: MOSFET N-CHANNEL 30V 25A 8DFN
Produkt ist nicht verfügbar
RM25P30S8 Rectron USA Description: MOSFET P-CHANNEL 30V 25A 8SOP
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2A8N60S4 RM2A8N60S4 Rectron USA Description: MOSFET N-CH 60V 2.8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V
Produkt ist nicht verfügbar
RM2N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO251
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 2A TO252-2
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM13P40S8
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 40V 13A 8SOP
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM140N150T2
RM140N150T2
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 140A TO220-3
Produkt ist nicht verfügbar
RM140N82T2 rm140n82t2.pdf
RM140N82T2
Hersteller: Rectron USA
Description: MOSFET N-CH 82V 140A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 82 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 40 V
Produkt ist nicht verfügbar
RM1505S
Hersteller: Rectron USA
Description: MOSFET N-CH ST 150V SOP-8
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM150N100ADF
RM150N100ADF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 128A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 50 V
Produkt ist nicht verfügbar
RM150N100HD
RM150N100HD
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar
RM150N100T2
RM150N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 50 V
Produkt ist nicht verfügbar
RM150N150HD rm150n150hd.pdf
RM150N150HD
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
Produkt ist nicht verfügbar
RM150N30LT2 rm150n30lt2.pdf
RM150N30LT2
Hersteller: Rectron USA
Description: MOSFET N-CH 30V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
RM150N60HD
RM150N60HD
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 150A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar
RM150N60T2
RM150N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 150A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar
RM15N650T2
RM15N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
RM15N650TI
RM15N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 33.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
RM16P60LD
RM16P60LD
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 60V 16A TO252-2
Produkt ist nicht verfügbar
RM170N30DF rm170n30df.pdf
RM170N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 170A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 85A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
Produkt ist nicht verfügbar
RM17N800HD
RM17N800HD
Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM17N800T2
RM17N800T2
Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM17N800TI
RM17N800TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Produkt ist nicht verfügbar
RM180N100T2 rm180n100t2.pdf
RM180N100T2
Hersteller: Rectron USA
Description: MOSFET N-CH 100V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
RM180N60T2
RM180N60T2
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 180A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
Produkt ist nicht verfügbar
RM185N30DF rm185n30df.pdf
RM185N30DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 185A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 95A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 15 V
Produkt ist nicht verfügbar
RM18P100HDE
Hersteller: Rectron USA
Description: MOSFET P-CH 100V 18A TO263-2
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM1A4N150S6 rm1a4n150s6.pdf
RM1A4N150S6
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 1.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
RM1A5N30S3AE
RM1A5N30S3AE
Hersteller: Rectron USA
Description: MOSFET N-CH 30V 1.5A/1.4A SOT323
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2003
RM2003
Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
RM2004NE
RM2004NE
Hersteller: Rectron USA
Description: MOSFET 2 N-CH 20V 6A SOT23-6
Produkt ist nicht verfügbar
RM2020ES9
RM2020ES9
Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta), 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
Produkt ist nicht verfügbar
RM20N150LD
RM20N150LD
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 20A TO252-2
Produkt ist nicht verfügbar
RM20N60LD
RM20N60LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 20A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
Produkt ist nicht verfügbar
RM20N650HD
RM20N650HD
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM20N650T2
RM20N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM20N650TI
RM20N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
RM210N75HD
RM210N75HD
Hersteller: Rectron USA
Description: MOSFET N-CH 75V 210A TO263-2
Produkt ist nicht verfügbar
RM21N650T2
Hersteller: Rectron USA
Description: MOSFET N-CH 650V 21A TO220-3
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N650T7
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO247
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N650TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 21A TO220F
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM21N700T2 rm21n700t2(ti).pdf
RM21N700T2
Hersteller: Rectron USA
Description: MOSFET N-CH 700V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
RM21N700TI rm21n700t2(ti).pdf
RM21N700TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 700V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
RM2301
RM2301
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 20V 3A SOT23
Produkt ist nicht verfügbar
RM2301E
RM2301E
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 20V 2.6A SOT23
Produkt ist nicht verfügbar
RM2302
RM2302
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 20V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
RM2303
RM2303
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 2A SOT23
Produkt ist nicht verfügbar
RM2304
RM2304
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 3.6A SOT23
Produkt ist nicht verfügbar
RM2305
RM2305
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
RM2305B
RM2305B
Hersteller: Rectron USA
Description: MOSFET P-CH 20V 3A/4.1A SOT23
Produkt ist nicht verfügbar
RM2306E
RM2306E
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 5.3A SOT23
Produkt ist nicht verfügbar
RM2308
RM2308
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
RM2309
RM2309
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 3.1A SOT23
Produkt ist nicht verfügbar
RM2309E
RM2309E
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V SOT23
Produkt ist nicht verfügbar
RM2310
RM2310
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 3A SOT23
Produkt ist nicht verfügbar
RM2312
RM2312
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 20V 4.5A SOT23
Produkt ist nicht verfügbar
RM2333 rm2333.pdf
RM2333
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
RM2333A rm2333a.pdf
RM2333A
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Produkt ist nicht verfügbar
RM24N200TI
RM24N200TI
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 220V 24A TO220F
Produkt ist nicht verfügbar
RM2520ES6
RM2520ES6
Hersteller: Rectron USA
Description: MOSFET N&P-CH 25/20V SOT23-6
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM25N30DN
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 25A 8DFN
Produkt ist nicht verfügbar
RM25P30S8
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 30V 25A 8SOP
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2A8N60S4
RM2A8N60S4
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 2.8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V
Produkt ist nicht verfügbar
RM2N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO251
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
RM2N650LD
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 2A TO252-2
auf Bestellung 1000000 Stücke:
Lieferzeit 21-28 Tag (e)
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