Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97566) > Seite 1609 nach 1627
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DTC124TUAT106 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DTC124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC124XCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC124XEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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2SC4061KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Case: SC59; SOT346 Frequency: 100MHz Collector-emitter voltage: 300V Current gain: 56...120 Collector current: 0.1A Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA124XCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTA124XCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTA124XEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Power dissipation: 0.15W Frequency: 250MHz Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 22kΩ Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Current gain: 68 Collector current: 0.1A |
Produkt ist nicht verfügbar |
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DTA124XKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| DTA124XMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| EM6J1T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| UM6J1NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| US6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -1.3A Pulsed drain current: -5.2A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 1.06Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
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| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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KDZVTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Mounting: SMD Leakage current: 20µA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Case: SOD123F Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 4.7V |
auf Bestellung 4360 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF2001NS2DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS2DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RCJ510N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V |
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Peak pulse power dissipation: 40W Max. off-state voltage: 13V Max. forward impulse current: 1.7A Breakdown voltage: 16V |
Produkt ist nicht verfügbar |
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1SS356VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Case: SC90A; SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
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1SS400CMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Mounting: SMD Max. forward impulse current: 0.5A Kind of package: reel; tape Type of diode: switching Case: SOD923 Max. off-state voltage: 90V Max. load current: 225mA Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 4ns |
auf Bestellung 4360 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1SS400CSFHT2RA | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Max. load current: 225mA Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 1.2V Case: SOD923 Kind of package: reel; tape Max. forward impulse current: 0.5A |
Produkt ist nicht verfügbar |
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1SS400SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Max. load current: 225mA Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 1.2V Case: SC79; SOD523 Kind of package: reel; tape Max. forward impulse current: 0.5A |
auf Bestellung 5120 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Kind of package: reel; tape Max. forward impulse current: 0.5A Leakage current: 0.1µA Type of diode: switching Features of semiconductor devices: fast switching Case: SC79; SOD523 Mounting: SMD Capacitance: 3pF Max. off-state voltage: 90V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 4ns |
auf Bestellung 7760 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037AKT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 120...270 Type of transistor: PNP |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037AKT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 180...390 Type of transistor: PNP |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
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UMZ1NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 150mW Case: SC88; SOT363 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 180MHz |
Produkt ist nicht verfügbar |
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| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SOD123F Zener voltage: 100V Type of diode: Zener Mounting: SMD |
Produkt ist nicht verfügbar |
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| RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW Type of diode: LED Mounting: SMD Case: 1208 LED colour: green Luminosity: 5.6...25mcd Dimensions: 3x2x1.3mm LED current: 20mA Wavelength: 570nm LED lens: transparent Power: 70mW Front: flat Operating voltage: 2.2...2.8V |
auf Bestellung 3752 Stücke: Lieferzeit 14-21 Tag (e) |
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SML-010YTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW Type of diode: LED Mounting: SMD Case: 1208 LED colour: yellow Luminosity: 2.2...6.3mcd Dimensions: 3x2x1.3mm LED current: 20mA Wavelength: 585nm LED lens: transparent Power: 70mW Front: flat Operating voltage: 2.1...2.8V |
Produkt ist nicht verfügbar |
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| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 250mA Pulsed drain current: 1A Power dissipation: 150mW Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RF05VAM1STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Mounting: SMD Max. forward impulse current: 6A Case: SOD323HE Kind of package: reel; tape Load current: 0.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 25ns Max. forward voltage: 0.98V Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
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| RF05VAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF05VYM1SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
auf Bestellung 4340 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF05VYM2SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.49V Case: SOD128 Kind of package: reel; tape Leakage current: 200µA Max. forward impulse current: 60A |
Produkt ist nicht verfügbar |
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| RQ6E045BNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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UMB10NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
Produkt ist nicht verfügbar |
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UMH10NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
Produkt ist nicht verfügbar |
| DTC124TUAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Produkt ist nicht verfügbar
| DTC124XCAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC124XCAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)| DTC124XEFRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| 2SC4061KT146N |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 335+ | 0.21 EUR |
| 425+ | 0.17 EUR |
| 480+ | 0.15 EUR |
| 535+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
| DTA124XCAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTA124XCAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.072 EUR |
| DTA124XEFRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.15W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Power dissipation: 0.15W
Frequency: 250MHz
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Current gain: 68
Collector current: 0.1A
Produkt ist nicht verfügbar
| DTA124XKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTA124XMT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| RHU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RD3G01BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RD3G03BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RD3G07BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RD3L01BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RD3L03BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RD3L07BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RJ1G12BGNTLL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| RJ1L12BGNTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| RJ1P12BBDTLL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| EM6J1T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS6J11TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS6J1TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| UM6J1NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| US6J11TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| RCJ120N20TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Produkt ist nicht verfügbar
| RCJ160N20TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSJ151P10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| KDZVTR4.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 350+ | 0.21 EUR |
| 430+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 590+ | 0.12 EUR |
| RF2001NS2DFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF2001NS2DTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF2001NS3DFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF2001NS3DTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RCJ510N25TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| MMBZ16VALFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Produkt ist nicht verfügbar
| 1SS356VMTE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 1SS400CMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Mounting: SMD
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: switching
Case: SOD923
Max. off-state voltage: 90V
Max. load current: 225mA
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Mounting: SMD
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: switching
Case: SOD923
Max. off-state voltage: 90V
Max. load current: 225mA
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1300+ | 0.056 EUR |
| 1380+ | 0.052 EUR |
| 1700+ | 0.042 EUR |
| 1780+ | 0.04 EUR |
| 1SS400CSFHT2RA |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Case: SOD923
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Case: SOD923
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
| 1SS400SMFHT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward impulse current: 0.5A
auf Bestellung 5120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1260+ | 0.057 EUR |
| 1380+ | 0.052 EUR |
| 1620+ | 0.044 EUR |
| 1720+ | 0.042 EUR |
| 1SS400SMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SC79; SOD523
Mounting: SMD
Capacitance: 3pF
Max. off-state voltage: 90V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SC79; SOD523
Mounting: SMD
Capacitance: 3pF
Max. off-state voltage: 90V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 4ns
auf Bestellung 7760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1180+ | 0.061 EUR |
| 1320+ | 0.054 EUR |
| 1740+ | 0.041 EUR |
| 1840+ | 0.039 EUR |
| 2SA1037AKT146Q |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1160+ | 0.062 EUR |
| 1280+ | 0.056 EUR |
| 1640+ | 0.044 EUR |
| 1660+ | 0.043 EUR |
| 1740+ | 0.041 EUR |
| 2SA1037AKT146R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1160+ | 0.062 EUR |
| 1280+ | 0.056 EUR |
| 1660+ | 0.043 EUR |
| 1760+ | 0.041 EUR |
| 2SC2412KT146Q |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 2360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1160+ | 0.062 EUR |
| 1280+ | 0.056 EUR |
| 1560+ | 0.046 EUR |
| 1660+ | 0.043 EUR |
| 2SC2412KT146R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 880+ | 0.082 EUR |
| 2SC2412KT146S |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
| UMZ1NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Produkt ist nicht verfügbar
| RJU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
| KDZLVTFTR100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
Produkt ist nicht verfügbar
| RCX450N20 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SML-010MTT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Type of diode: LED
Mounting: SMD
Case: 1208
LED colour: green
Luminosity: 5.6...25mcd
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
Operating voltage: 2.2...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Type of diode: LED
Mounting: SMD
Case: 1208
LED colour: green
Luminosity: 5.6...25mcd
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
Operating voltage: 2.2...2.8V
auf Bestellung 3752 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 190+ | 0.38 EUR |
| 243+ | 0.29 EUR |
| 474+ | 0.15 EUR |
| 502+ | 0.14 EUR |
| SML-010YTT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Type of diode: LED
Mounting: SMD
Case: 1208
LED colour: yellow
Luminosity: 2.2...6.3mcd
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 585nm
LED lens: transparent
Power: 70mW
Front: flat
Operating voltage: 2.1...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Type of diode: LED
Mounting: SMD
Case: 1208
LED colour: yellow
Luminosity: 2.2...6.3mcd
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 585nm
LED lens: transparent
Power: 70mW
Front: flat
Operating voltage: 2.1...2.8V
Produkt ist nicht verfügbar
| RSM002N06T2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RF05VAM1STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
| RF05VAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| 800+ | 0.09 EUR |
| 850+ | 0.085 EUR |
| RF05VYM1SFHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
auf Bestellung 4340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 630+ | 0.11 EUR |
| 690+ | 0.1 EUR |
| 910+ | 0.079 EUR |
| 960+ | 0.075 EUR |
| RF05VYM2SFHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RSX205LAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
| RQ6E045BNTCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| UMB10NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Produkt ist nicht verfügbar
| UMH10NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Produkt ist nicht verfügbar