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PTZTE255.6A PTZTE255.6A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 5.6V 1W PMDS
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Lieferzeit 21-28 Tag (e)
UDZTE-175.6B UDZTE-175.6B Rohm Semiconductor udz_series_datasheet.pdf Description: DIODE ZENER 5.6V 200MW UMD2
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TDZTR6.2 TDZTR6.2 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 6.2V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR6.8 TDZTR6.8 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 6.8V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR7.5 TDZTR7.5 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 7.5V 500MW TUMD2
Produkt ist nicht verfügbar
UDZTE-178.2B UDZTE-178.2B Rohm Semiconductor udz_series_datasheet.pdf Description: DIODE ZENER 8.2V 200MW UMD2
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TDZTR8.2 TDZTR8.2 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 8.2V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR9.1 TDZTR9.1 Rohm Semiconductor tdztr10-e Description: DIODE ZENER 9.1V 500MW TUMD2
Produkt ist nicht verfügbar
RPM960-H14E3A Rohm Semiconductor RPM960-H14.pdf Description: MODULE IRDA 1152KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E2 Rohm Semiconductor RPM873.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM870-H14E2 Rohm Semiconductor RPM870-H14.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM872-E2A Rohm Semiconductor RPM872.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM882-H14E2 Rohm Semiconductor RPM882-H14.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Size: 8.00mm x 2.90mm x 2.40mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 80 µA
Produkt ist nicht verfügbar
RPM882-H12E4 Rohm Semiconductor RPM882-H12.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM872-H12E4A Rohm Semiconductor RPM872-H12.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E2A Rohm Semiconductor RPM873.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E4A Rohm Semiconductor RPM873.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM871-E4A RPM871-E4A Rohm Semiconductor RPM871.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM870-H14E2A Rohm Semiconductor RPM870-H14.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM871-E4 Rohm Semiconductor RPM871.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM973-H11E2A RPM973-H11E2A Rohm Semiconductor RPM973-H11.pdf Description: MODULE IRDA 4MBPS FIR COMPATBL S
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 4Mbs (FIR)
Standards: IrDA 1.4
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 1 mA
Produkt ist nicht verfügbar
RPM973-H16E4A RPM973-H16E4A Rohm Semiconductor RPM973-H16.pdf Description: MODULE IRDA 4MBPS FIR COMPATBL S
Produkt ist nicht verfügbar
QS6J11TR QS6J11TR Rohm Semiconductor datasheet?p=QS6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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RUM002N02T2L RUM002N02T2L Rohm Semiconductor datasheet?p=RUM002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 648000 Stücke:
Lieferzeit 21-28 Tag (e)
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16000+ 0.13 EUR
56000+ 0.1 EUR
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RUR020N02TL RUR020N02TL Rohm Semiconductor rur020n02.pdf Description: MOSFET N-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.43 EUR
6000+ 0.4 EUR
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RW1C020UNT2R RW1C020UNT2R Rohm Semiconductor rw1c020un.pdf Description: MOSFET N-CH 20V 2A WEMT6
Produkt ist nicht verfügbar
RSS100N03FU6TB RSS100N03FU6TB Rohm Semiconductor rss100n03.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Produkt ist nicht verfügbar
RSS105N03FU6TB RSS105N03FU6TB Rohm Semiconductor rss105n03.pdf Description: MOSFET N-CH 30V 10.5A 8SOIC
Produkt ist nicht verfügbar
RSS110N03FU6TB RSS110N03FU6TB Rohm Semiconductor rss110n03.pdf Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
RSS120N03FU6TB RSS120N03FU6TB Rohm Semiconductor rss120n03.pdf Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Produkt ist nicht verfügbar
RSS125N03FU6TB RSS125N03FU6TB Rohm Semiconductor rss125n03.pdf Description: MOSFET N-CH 30V 12.5A 8SOIC
Produkt ist nicht verfügbar
RSS130N03FU6TB RSS130N03FU6TB Rohm Semiconductor rss130n03.pdf Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
R5016ANX R5016ANX Rohm Semiconductor r5016anx.pdf Description: MOSFET N-CH 500V 16A TO-220FM
Produkt ist nicht verfügbar
RSR020N06TL RSR020N06TL Rohm Semiconductor Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
RSS080N05FU6TB RSS080N05FU6TB Rohm Semiconductor Description: MOSFET N-CH 60V 8A 8SOP
Produkt ist nicht verfügbar
SP8K5FU6TB SP8K5FU6TB Rohm Semiconductor sp8k5.pdf Description: MOSFET 2N-CH 30V 3.5A 8SOIC
Produkt ist nicht verfügbar
SP8K31TB1 SP8K31TB1 Rohm Semiconductor sp8k31.pdf Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8K1FU6TB SP8K1FU6TB Rohm Semiconductor sp8k1.pdf Description: MOSFET 2N-CH 30V 5A 8SOIC
Produkt ist nicht verfügbar
SP8K2FU6TB SP8K2FU6TB Rohm Semiconductor sp8k2.pdf Description: MOSFET 2N-CH 30V 6A 8SOIC
Produkt ist nicht verfügbar
SP8K3FU6TB SP8K3FU6TB Rohm Semiconductor sp8k3.pdf Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8K4FU6TB SP8K4FU6TB Rohm Semiconductor sp8k4.pdf Description: MOSFET 2N-CH 30V 9A 8SOIC
Produkt ist nicht verfügbar
SP8K22FU6TB SP8K22FU6TB Rohm Semiconductor sp8k22.pdf Description: MOSFET 2N-CH 45V 4.5A 8SOIC
Produkt ist nicht verfügbar
SP8K24FU6TB SP8K24FU6TB Rohm Semiconductor sp8k24.pdf Description: MOSFET 2N-CH 45V 6A 8SOIC
Produkt ist nicht verfügbar
EM6M2T2R EM6M2T2R Rohm Semiconductor datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
8000+0.39 EUR
16000+ 0.36 EUR
24000+ 0.35 EUR
Mindestbestellmenge: 8000
US6M11TR US6M11TR Rohm Semiconductor datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V/12V TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.51 EUR
6000+ 0.49 EUR
9000+ 0.45 EUR
Mindestbestellmenge: 3000
TT8M2TR TT8M2TR Rohm Semiconductor TT8M2.pdf Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-TSST
Produkt ist nicht verfügbar
SP8M2FU6TB SP8M2FU6TB Rohm Semiconductor sp8m2.pdf Description: MOSFET N/P-CH 30V 3.5A 8SOIC
Produkt ist nicht verfügbar
SP8M6FU6TB SP8M6FU6TB Rohm Semiconductor SP8M6.pdf Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8M7FU6TB SP8M7FU6TB Rohm Semiconductor SP8M7.pdf Description: MOSFET N/P-CH 30V 5A/7A 8SOIC
Produkt ist nicht verfügbar
SP8M8FU6TB SP8M8FU6TB Rohm Semiconductor SP8M8.pdf Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8M5FU6TB SP8M5FU6TB Rohm Semiconductor SP8M5.pdf Description: MOSFET N/P-CH 30V 6A/7A 8SOIC
Produkt ist nicht verfügbar
SP8M10FU6TB SP8M10FU6TB Rohm Semiconductor SP8M10.pdf Description: MOSFET N/P-CH 30V 7A/4.5A 8SOIC
Produkt ist nicht verfügbar
SP8M9FU6TB SP8M9FU6TB Rohm Semiconductor SP8M9.pdf Description: MOSFET N/P-CH 30V 9A/5A 8SOIC
Produkt ist nicht verfügbar
SP8M4FU6TB SP8M4FU6TB Rohm Semiconductor SP8M4.pdf Description: MOSFET N/P-CH 30V 9A/7A 8SOIC
Produkt ist nicht verfügbar
RSD130P10TL RSD130P10TL Rohm Semiconductor RSD130P10.pdf Description: MOSFET P-CH 100V 13A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
RZR020P01TL RZR020P01TL Rohm Semiconductor Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.49 EUR
Mindestbestellmenge: 3000
RZF020P01TL RZF020P01TL Rohm Semiconductor datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.52 EUR
Mindestbestellmenge: 3000
RQ1A060ZPTR RQ1A060ZPTR Rohm Semiconductor datasheet?p=RQ1A060ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.88 EUR
6000+ 0.82 EUR
15000+ 0.79 EUR
30000+ 0.76 EUR
Mindestbestellmenge: 3000
RZM002P02T2L RZM002P02T2L Rohm Semiconductor datasheet?p=RZM002P02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 160000 Stücke:
Lieferzeit 21-28 Tag (e)
8000+0.16 EUR
Mindestbestellmenge: 8000
RRS100P03TB1 RRS100P03TB1 Rohm Semiconductor Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
PTZTE255.6A ptz_series_spec.pdf
PTZTE255.6A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDS
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
UDZTE-175.6B udz_series_datasheet.pdf
UDZTE-175.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 200MW UMD2
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TDZTR6.2 tdz10.pdf
TDZTR6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR6.8 tdz10.pdf
TDZTR6.8
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR7.5 tdz10.pdf
TDZTR7.5
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 500MW TUMD2
Produkt ist nicht verfügbar
UDZTE-178.2B udz_series_datasheet.pdf
UDZTE-178.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 200MW UMD2
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TDZTR8.2 tdz10.pdf
TDZTR8.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 500MW TUMD2
Produkt ist nicht verfügbar
TDZTR9.1 tdztr10-e
TDZTR9.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 500MW TUMD2
Produkt ist nicht verfügbar
RPM960-H14E3A RPM960-H14.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 1152KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E2 RPM873.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM870-H14E2 RPM870-H14.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM872-E2A RPM872.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM882-H14E2 RPM882-H14.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Size: 8.00mm x 2.90mm x 2.40mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 80 µA
Produkt ist nicht verfügbar
RPM882-H12E4 RPM882-H12.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM872-H12E4A RPM872-H12.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E2A RPM873.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM873-E4A RPM873.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM871-E4A RPM871.pdf
RPM871-E4A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM870-H14E2A RPM870-H14.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM871-E4 RPM871.pdf
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RPM973-H11E2A RPM973-H11.pdf
RPM973-H11E2A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 4MBPS FIR COMPATBL S
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 4Mbs (FIR)
Standards: IrDA 1.4
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 1 mA
Produkt ist nicht verfügbar
RPM973-H16E4A RPM973-H16.pdf
RPM973-H16E4A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 4MBPS FIR COMPATBL S
Produkt ist nicht verfügbar
QS6J11TR datasheet?p=QS6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6J11TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.54 EUR
Mindestbestellmenge: 3000
RUM002N02T2L datasheet?p=RUM002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUM002N02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 648000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.15 EUR
16000+ 0.13 EUR
56000+ 0.1 EUR
Mindestbestellmenge: 8000
RUR020N02TL rur020n02.pdf
RUR020N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.4 EUR
Mindestbestellmenge: 3000
RW1C020UNT2R rw1c020un.pdf
RW1C020UNT2R
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A WEMT6
Produkt ist nicht verfügbar
RSS100N03FU6TB rss100n03.pdf
RSS100N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Produkt ist nicht verfügbar
RSS105N03FU6TB rss105n03.pdf
RSS105N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10.5A 8SOIC
Produkt ist nicht verfügbar
RSS110N03FU6TB rss110n03.pdf
RSS110N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
RSS120N03FU6TB rss120n03.pdf
RSS120N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Produkt ist nicht verfügbar
RSS125N03FU6TB rss125n03.pdf
RSS125N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOIC
Produkt ist nicht verfügbar
RSS130N03FU6TB rss130n03.pdf
RSS130N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
R5016ANX r5016anx.pdf
R5016ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 16A TO-220FM
Produkt ist nicht verfügbar
RSR020N06TL
RSR020N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
RSS080N05FU6TB
RSS080N05FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A 8SOP
Produkt ist nicht verfügbar
SP8K5FU6TB sp8k5.pdf
SP8K5FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A 8SOIC
Produkt ist nicht verfügbar
SP8K31TB1 sp8k31.pdf
SP8K31TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8K1FU6TB sp8k1.pdf
SP8K1FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A 8SOIC
Produkt ist nicht verfügbar
SP8K2FU6TB sp8k2.pdf
SP8K2FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOIC
Produkt ist nicht verfügbar
SP8K3FU6TB sp8k3.pdf
SP8K3FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8K4FU6TB sp8k4.pdf
SP8K4FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOIC
Produkt ist nicht verfügbar
SP8K22FU6TB sp8k22.pdf
SP8K22FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4.5A 8SOIC
Produkt ist nicht verfügbar
SP8K24FU6TB sp8k24.pdf
SP8K24FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 6A 8SOIC
Produkt ist nicht verfügbar
EM6M2T2R datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6M2T2R
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.39 EUR
16000+ 0.36 EUR
24000+ 0.35 EUR
Mindestbestellmenge: 8000
US6M11TR datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6M11TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V/12V TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
6000+ 0.49 EUR
9000+ 0.45 EUR
Mindestbestellmenge: 3000
TT8M2TR TT8M2.pdf
TT8M2TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-TSST
Produkt ist nicht verfügbar
SP8M2FU6TB sp8m2.pdf
SP8M2FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A 8SOIC
Produkt ist nicht verfügbar
SP8M6FU6TB SP8M6.pdf
SP8M6FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8M7FU6TB SP8M7.pdf
SP8M7FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/7A 8SOIC
Produkt ist nicht verfügbar
SP8M8FU6TB SP8M8.pdf
SP8M8FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
SP8M5FU6TB SP8M5.pdf
SP8M5FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOIC
Produkt ist nicht verfügbar
SP8M10FU6TB SP8M10.pdf
SP8M10FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/4.5A 8SOIC
Produkt ist nicht verfügbar
SP8M9FU6TB SP8M9.pdf
SP8M9FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/5A 8SOIC
Produkt ist nicht verfügbar
SP8M4FU6TB SP8M4.pdf
SP8M4FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOIC
Produkt ist nicht verfügbar
RSD130P10TL RSD130P10.pdf
RSD130P10TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
RZR020P01TL
RZR020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.49 EUR
Mindestbestellmenge: 3000
RZF020P01TL datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZF020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.52 EUR
Mindestbestellmenge: 3000
RQ1A060ZPTR datasheet?p=RQ1A060ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1A060ZPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.82 EUR
15000+ 0.79 EUR
30000+ 0.76 EUR
Mindestbestellmenge: 3000
RZM002P02T2L datasheet?p=RZM002P02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZM002P02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 160000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.16 EUR
Mindestbestellmenge: 8000
RRS100P03TB1
RRS100P03TB1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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