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UT6JB5TCR UT6JB5TCR Rohm Semiconductor datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6JB5TCR UT6JB5TCR Rohm Semiconductor datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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RQ6E030ATTCR RQ6E030ATTCR Rohm Semiconductor datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RAQ045P01TCR RAQ045P01TCR Rohm Semiconductor datasheet?p=RAQ045P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RF4L070BGTCR RF4L070BGTCR Rohm Semiconductor datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4L070BGTCR RF4L070BGTCR Rohm Semiconductor datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RF4G100BGTCR RF4G100BGTCR Rohm Semiconductor datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4G100BGTCR RF4G100BGTCR Rohm Semiconductor datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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RQ7G080BGTCR RQ7G080BGTCR Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RQ7G080BGTCR RQ7G080BGTCR Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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BS2100F-E2 Rohm Semiconductor Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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ML610Q178-022GAZ0AAL Rohm Semiconductor ML610Q178.pdf Description: IC
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ML610Q178-022GAZ0AX Rohm Semiconductor ML610Q178.pdf Description: IC
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SFR01MZPJ332 SFR01MZPJ332 Rohm Semiconductor sfr-e.pdf Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
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BM2P134Q-Z BM2P134Q-Z Rohm Semiconductor bm2p13xqx-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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BM2P121X-Z BM2P121X-Z Rohm Semiconductor bm2pxx1x-z-e.pdf Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
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BM2SC124FP2-LBZE2 BM2SC124FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
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BM2SC124FP2-LBZE2 BM2SC124FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
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BM2SC121FP2-LBZE2 BM2SC121FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
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BM2SC121FP2-LBZE2 BM2SC121FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
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RGTV80TK65DGVC11 RGTV80TK65DGVC11 Rohm Semiconductor datasheet?p=RGTV80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
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MCR03EZPFX8203 MCR03EZPFX8203 Rohm Semiconductor mcr-e.pdf Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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MCR03EZPFX8202 MCR03EZPFX8202 Rohm Semiconductor mcr-e.pdf Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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UMT1NFHATN UMT1NFHATN Rohm Semiconductor datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BD57021MWV-E2 BD57021MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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328+0.064 EUR
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
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RBR30NS60ATL RBR30NS60ATL Rohm Semiconductor datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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RBR30NS60ATL RBR30NS60ATL Rohm Semiconductor datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
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RBR20NS60ATL RBR20NS60ATL Rohm Semiconductor datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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RBR20NS60ATL RBR20NS60ATL Rohm Semiconductor datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RBR10NS60AFHTL RBR10NS60AFHTL Rohm Semiconductor rbr10ns60afhtl-e.pdf Description: DIODE ARRAY SCHOTT 60V 10A LPDS
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RBR10NS60AFHTL RBR10NS60AFHTL Rohm Semiconductor rbr10ns60afhtl-e.pdf Description: DIODE ARRAY SCHOTT 60V 10A LPDS
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100+1.63 EUR
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RBR20NS60AFHTL RBR20NS60AFHTL Rohm Semiconductor datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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RBR20NS60AFHTL RBR20NS60AFHTL Rohm Semiconductor datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 855 Stücke:
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RBR30NS60AFHTL RBR30NS60AFHTL Rohm Semiconductor datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
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RBR30NS60AFHTL RBR30NS60AFHTL Rohm Semiconductor datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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ML620Q156B-628TBZWAX ML620Q156B-628TBZWAX Rohm Semiconductor datasheet?p=ML620Q156B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU7232YFVM-CTR BU7232YFVM-CTR Rohm Semiconductor Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
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BU7232YFVM-CTR BU7232YFVM-CTR Rohm Semiconductor Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
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BD5291FVE-GTR BD5291FVE-GTR Rohm Semiconductor datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD5291FVE-GTR BD5291FVE-GTR Rohm Semiconductor datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Cut Tape (CT)
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14+1.52 EUR
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25+0.99 EUR
100+0.87 EUR
250+0.81 EUR
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RFUH10TB4SNZC9 RFUH10TB4SNZC9 Rohm Semiconductor datasheet?p=RFUH10TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
auf Bestellung 394 Stücke:
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5+4.25 EUR
10+2.73 EUR
50+2.06 EUR
100+1.84 EUR
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RGT20TM65DGC9 RGT20TM65DGC9 Rohm Semiconductor datasheet?p=RGT20TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Produkt ist nicht verfügbar
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RFN10TF6SC9 RFN10TF6SC9 Rohm Semiconductor datasheet?p=RFN10TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 708 Stücke:
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DA204UMTL DA204UMTL Rohm Semiconductor datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
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ML610Q174-482GAZWAX Rohm Semiconductor datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 80-BQFP
Packaging: Bulk
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ML620Q151BT-NNNTBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-108TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-106TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-110TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-103TBWNX Rohm Semiconductor Description: IC
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UT6JB5TCR datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6JB5TCR datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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RQ6E030ATTCR datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E030ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RAQ045P01TCR datasheet?p=RAQ045P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RAQ045P01TCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RF4L070BGTCR datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4L070BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4L070BGTCR datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4L070BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RF4G100BGTCR datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4G100BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4G100BGTCR datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4G100BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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RQ7G080BGTCR datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RQ7G080BGTCR datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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BS2100F-E2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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ML610Q178-022GAZ0AAL ML610Q178.pdf
Hersteller: Rohm Semiconductor
Description: IC
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ML610Q178-022GAZ0AX ML610Q178.pdf
Hersteller: Rohm Semiconductor
Description: IC
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SFR01MZPJ332 sfr-e.pdf
SFR01MZPJ332
Hersteller: Rohm Semiconductor
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
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BM2P134Q-Z bm2p13xqx-e.pdf
BM2P134Q-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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BM2P121X-Z bm2pxx1x-z-e.pdf
BM2P121X-Z
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
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BM2SC124FP2-LBZE2 datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC124FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
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BM2SC124FP2-LBZE2 datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC124FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
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BM2SC121FP2-LBZE2 datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC121FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
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BM2SC121FP2-LBZE2 datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC121FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
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RGTV80TK65DGVC11 datasheet?p=RGTV80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TK65DGVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
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2+15.52 EUR
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MCR03EZPFX8203 mcr-e.pdf
MCR03EZPFX8203
Hersteller: Rohm Semiconductor
Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MCR03EZPFX8202 mcr-e.pdf
MCR03EZPFX8202
Hersteller: Rohm Semiconductor
Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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UMT1NFHATN datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT1NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Produkt ist nicht verfügbar
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3553 Stücke:
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23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BD57021MWV-E2 uqfn040v5050_1-e.pdf
BD57021MWV-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Produkt ist nicht verfügbar
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
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5000+0.064 EUR
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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46+0.46 EUR
90+0.24 EUR
134+0.15 EUR
157+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 9989 Stücke:
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84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
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19+1.11 EUR
29+0.74 EUR
100+0.5 EUR
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
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1000+1.2 EUR
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
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8+2.62 EUR
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RBR30NS60ATL datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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RBR30NS60ATL datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
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RBR20NS60ATL datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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1000+1.42 EUR
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RBR20NS60ATL datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1000 Stücke:
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8+2.98 EUR
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RBR10NS60AFHTL rbr10ns60afhtl-e.pdf
RBR10NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Produkt ist nicht verfügbar
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RBR10NS60AFHTL rbr10ns60afhtl-e.pdf
RBR10NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
auf Bestellung 999 Stücke:
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9+2.34 EUR
10+2.09 EUR
100+1.63 EUR
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RBR20NS60AFHTL datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR20NS60AFHTL datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 855 Stücke:
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8+2.7 EUR
10+2.21 EUR
100+1.71 EUR
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RBR30NS60AFHTL datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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1000+1.57 EUR
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RBR30NS60AFHTL datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1330 Stücke:
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AnzahlPrivatkunde
5+4.88 EUR
10+3.13 EUR
50+2.38 EUR
100+2.13 EUR
500+1.61 EUR
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ML620Q156B-628TBZWAX datasheet?p=ML620Q156B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML620Q156B-628TBZWAX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU7232YFVM-CTR
BU7232YFVM-CTR
Hersteller: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Produkt ist nicht verfügbar
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BU7232YFVM-CTR
BU7232YFVM-CTR
Hersteller: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
10+2.81 EUR
25+2.65 EUR
100+2.26 EUR
250+2.12 EUR
500+1.86 EUR
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BD5291FVE-GTR datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5291FVE-GTR
Hersteller: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD5291FVE-GTR datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5291FVE-GTR
Hersteller: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Cut Tape (CT)
auf Bestellung 2906 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
20+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.81 EUR
500+0.77 EUR
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RFUH10TB4SNZC9 datasheet?p=RFUH10TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH10TB4SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+2.73 EUR
50+2.06 EUR
100+1.84 EUR
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RGT20TM65DGC9 datasheet?p=RGT20TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT20TM65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Produkt ist nicht verfügbar
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RFN10TF6SC9 datasheet?p=RFN10TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN10TF6SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.21 EUR
10+3.38 EUR
50+2.57 EUR
100+2.32 EUR
500+1.87 EUR
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DA204UMTL datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA204UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ML610Q174-482GAZWAX datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 80-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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ML620Q151BT-NNNTBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-108TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-106TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-110TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-103TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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