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BM2P104QF-E2 BM2P104QF-E2 Rohm Semiconductor datasheet?p=BM2P104QF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THE PWM TYPE DC/DC CONVERTER FOR
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10.81V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 10.81V
Voltage - Input (Min): 8V
Part Status: Active
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BM2P104QF-E2 BM2P104QF-E2 Rohm Semiconductor datasheet?p=BM2P104QF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THE PWM TYPE DC/DC CONVERTER FOR
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10.81V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 10.81V
Voltage - Input (Min): 8V
Part Status: Active
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R6018JNXC7G R6018JNXC7G Rohm Semiconductor datasheet?p=R6018JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 18A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 4.2mA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6509END3TL1 R6509END3TL1 Rohm Semiconductor datasheet?p=R6509END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 9A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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R6509END3TL1 R6509END3TL1 Rohm Semiconductor datasheet?p=R6509END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 9A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BA17808CP-E2 BA17808CP-E2 Rohm Semiconductor datasheet?p=BA17808CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 8V 1A TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
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BA17808CP-E2 BA17808CP-E2 Rohm Semiconductor datasheet?p=BA17808CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 8V 1A TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
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R6535ENZ4C13 R6535ENZ4C13 Rohm Semiconductor datasheet?p=R6535ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 35A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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R6004JNXC7G R6004JNXC7G Rohm Semiconductor datasheet?p=R6004JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
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LM2901FV-E2 LM2901FV-E2 Rohm Semiconductor datasheet?p=LM2901FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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LM2901FV-E2 LM2901FV-E2 Rohm Semiconductor datasheet?p=LM2901FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SSOP-B
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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2SA2029FHAT2LQ 2SA2029FHAT2LQ Rohm Semiconductor datasheet?p=2SA2029FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 50V 0.15A VMT3
Qualification: AEC-Q101
Grade: Automotive
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
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2SA2029FHAT2LQ 2SA2029FHAT2LQ Rohm Semiconductor datasheet?p=2SA2029FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 50V 0.15A VMT3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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BA3472WFV-CE2 BA3472WFV-CE2 Rohm Semiconductor datasheet?p=BA3472WFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
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BA3472WFV-CE2 BA3472WFV-CE2 Rohm Semiconductor datasheet?p=BA3472WFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
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BA3474RFV-E2 BA3474RFV-E2 Rohm Semiconductor ba3472f-e.pdf Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA3474RFV-E2 BA3474RFV-E2 Rohm Semiconductor ba3472f-e.pdf Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA82902YFV-CE2 BA82902YFV-CE2 Rohm Semiconductor ba8290xyx-c-e.pdf Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
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BA82902YFV-CE2 BA82902YFV-CE2 Rohm Semiconductor ba8290xyx-c-e.pdf Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
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BA2902YFV-MGE2 BA2902YFV-MGE2 Rohm Semiconductor ba2904xx-m-e.pdf Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA2902YFV-MGE2 BA2902YFV-MGE2 Rohm Semiconductor ba2904xx-m-e.pdf Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA4564WFV-E2 BA4564WFV-E2 Rohm Semiconductor ba4560xxx-e.pdf Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BD6425EFV-E2 BD6425EFV-E2 Rohm Semiconductor datasheet?p=BD6425EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6425EFV-E2 BD6425EFV-E2 Rohm Semiconductor datasheet?p=BD6425EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6423EFV-E2 BD6423EFV-E2 Rohm Semiconductor datasheet?p=BD6423EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6423EFV-E2 BD6423EFV-E2 Rohm Semiconductor datasheet?p=BD6423EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6422EFV-E2 BD6422EFV-E2 Rohm Semiconductor datasheet?p=BD6422EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6422EFV-E2 BD6422EFV-E2 Rohm Semiconductor datasheet?p=BD6422EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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100+7.68 EUR
250+7.32 EUR
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BZX84C10VLYFHT116 BZX84C10VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C10VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 10V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C10VLYFHT116 BZX84C10VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C10VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 10V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD2062FJ-LBE2 BD2062FJ-LBE2 Rohm Semiconductor datasheet?p=BD2062FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SWITCH USB HI SIDE 2CH SOP8J
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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RQ3P300BHTB1 RQ3P300BHTB1 Rohm Semiconductor datasheet?p=RQ3P300BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
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RQ3P300BHTB1 RQ3P300BHTB1 Rohm Semiconductor datasheet?p=RQ3P300BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
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100+3.06 EUR
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RQ7G080ATTCR RQ7G080ATTCR Rohm Semiconductor datasheet?p=RQ7G080AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
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RQ7G080ATTCR RQ7G080ATTCR Rohm Semiconductor datasheet?p=RQ7G080AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
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QH8KB5TCR QH8KB5TCR Rohm Semiconductor datasheet?p=QH8KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KB5TCR QH8KB5TCR Rohm Semiconductor datasheet?p=QH8KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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10+2.15 EUR
16+1.36 EUR
100+0.86 EUR
500+0.67 EUR
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QH8MB5TCR QH8MB5TCR Rohm Semiconductor datasheet?p=QH8MB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
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QH8MB5TCR QH8MB5TCR Rohm Semiconductor datasheet?p=QH8MB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 4388 Stücke:
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QH8MC5TCR QH8MC5TCR Rohm Semiconductor datasheet?p=QH8MC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 60V 3A TSMT8
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
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QH8MC5TCR QH8MC5TCR Rohm Semiconductor datasheet?p=QH8MC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 60V 3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QH8K26TR QH8K26TR Rohm Semiconductor datasheet?p=QH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8K26TR QH8K26TR Rohm Semiconductor datasheet?p=QH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 1698 Stücke:
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14+1.55 EUR
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500+1.02 EUR
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QH8JB5TCR QH8JB5TCR Rohm Semiconductor datasheet?p=QH8JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8JB5TCR QH8JB5TCR Rohm Semiconductor datasheet?p=QH8JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2668 Stücke:
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10+2.18 EUR
100+1.46 EUR
500+1.15 EUR
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QH8M22TCR QH8M22TCR Rohm Semiconductor datasheet?p=QH8M22&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QS8K21TR QS8K21TR Rohm Semiconductor datasheet?p=QS8K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QS8K21TR QS8K21TR Rohm Semiconductor datasheet?p=QS8K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QS8K11TCR QS8K11TCR Rohm Semiconductor datasheet?p=QS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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HS8MA2TCR1 HS8MA2TCR1 Rohm Semiconductor datasheet?p=HS8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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HS8MA2TCR1 HS8MA2TCR1 Rohm Semiconductor datasheet?p=HS8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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BU45K312G-TL BU45K312G-TL Rohm Semiconductor bu45kxxxg-e.pdf Description: IC SUPERVISOR 1 CHANNEL 3SSOP
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BD450M2WFP3-CE2 BD450M2WFP3-CE2 Rohm Semiconductor datasheet?p=BD450M2WFP3-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BD450M2WFP3-CE2 BD450M2WFP3-CE2 Rohm Semiconductor datasheet?p=BD450M2WFP3-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BD450M5FP2-CZE2 BD450M5FP2-CZE2 Rohm Semiconductor datasheet?p=BD450M5FP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
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BD450M5FP2-CZE2 BD450M5FP2-CZE2 Rohm Semiconductor datasheet?p=BD450M5FP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
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RF1501TF3SC9 RF1501TF3SC9 Rohm Semiconductor datasheet?p=RF1501TF3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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QS5Y2FSTR QS5Y2FSTR Rohm Semiconductor datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
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QS5Y2FSTR QS5Y2FSTR Rohm Semiconductor datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
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DTA143XU3T106 DTA143XU3T106 Rohm Semiconductor datasheet?p=DTA143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BM2P104QF-E2 datasheet?p=BM2P104QF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P104QF-E2
Hersteller: Rohm Semiconductor
Description: THE PWM TYPE DC/DC CONVERTER FOR
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10.81V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 10.81V
Voltage - Input (Min): 8V
Part Status: Active
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BM2P104QF-E2 datasheet?p=BM2P104QF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P104QF-E2
Hersteller: Rohm Semiconductor
Description: THE PWM TYPE DC/DC CONVERTER FOR
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz
Voltage - Input (Max): 10.81V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 10.81V
Voltage - Input (Min): 8V
Part Status: Active
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R6018JNXC7G datasheet?p=R6018JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6018JNXC7G
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 18A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 4.2mA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6509END3TL1 datasheet?p=R6509END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6509END3TL1 datasheet?p=R6509END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BA17808CP-E2 datasheet?p=BA17808CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA17808CP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
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BA17808CP-E2 datasheet?p=BA17808CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA17808CP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
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R6535ENZ4C13 datasheet?p=R6535ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZ4C13
Hersteller: Rohm Semiconductor
Description: 650V 35A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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R6004JNXC7G datasheet?p=R6004JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004JNXC7G
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
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LM2901FV-E2 datasheet?p=LM2901FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901FV-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM2901FV-E2 datasheet?p=LM2901FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901FV-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SSOP-B
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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11+1.95 EUR
15+1.4 EUR
25+1.26 EUR
100+1.12 EUR
250+1.05 EUR
500+1 EUR
1000+0.98 EUR
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2SA2029FHAT2LQ datasheet?p=2SA2029FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SA2029FHAT2LQ
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Qualification: AEC-Q101
Grade: Automotive
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
Produkt ist nicht verfügbar
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2SA2029FHAT2LQ datasheet?p=2SA2029FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SA2029FHAT2LQ
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 6084 Stücke:
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35+0.61 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
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BA3472WFV-CE2 datasheet?p=BA3472WFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA3472WFV-CE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BA3472WFV-CE2 datasheet?p=BA3472WFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA3472WFV-CE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 757 Stücke:
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5+4.44 EUR
10+2.77 EUR
25+2.34 EUR
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BA3474RFV-E2 ba3472f-e.pdf
BA3474RFV-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Produkt ist nicht verfügbar
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BA3474RFV-E2 ba3472f-e.pdf
BA3474RFV-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA82902YFV-CE2 ba8290xyx-c-e.pdf
BA82902YFV-CE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
Produkt ist nicht verfügbar
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BA82902YFV-CE2 ba8290xyx-c-e.pdf
BA82902YFV-CE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
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7+3.37 EUR
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BA2902YFV-MGE2 ba2904xx-m-e.pdf
BA2902YFV-MGE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Produkt ist nicht verfügbar
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BA2902YFV-MGE2 ba2904xx-m-e.pdf
BA2902YFV-MGE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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8+2.95 EUR
10+2.63 EUR
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BA4564WFV-E2 ba4560xxx-e.pdf
BA4564WFV-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Produkt ist nicht verfügbar
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BD6425EFV-E2 datasheet?p=BD6425EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6425EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Produkt ist nicht verfügbar
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BD6425EFV-E2 datasheet?p=BD6425EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6425EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6423EFV-E2 datasheet?p=BD6423EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6423EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Produkt ist nicht verfügbar
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BD6423EFV-E2 datasheet?p=BD6423EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6423EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 1438 Stücke:
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2+12.48 EUR
10+9.62 EUR
25+8.9 EUR
100+8.12 EUR
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500+7.52 EUR
1000+7.33 EUR
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BD6422EFV-E2 datasheet?p=BD6422EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6422EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 2000 Stücke:
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2000+6.25 EUR
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BD6422EFV-E2 datasheet?p=BD6422EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD6422EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 5892 Stücke:
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2+11.85 EUR
10+9.1 EUR
25+8.43 EUR
100+7.68 EUR
250+7.32 EUR
500+7.1 EUR
1000+6.93 EUR
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BZX84C10VLYFHT116 datasheet?p=BZX84C10VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C10VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C10VLYFHT116 datasheet?p=BZX84C10VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C10VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD2062FJ-LBE2 datasheet?p=BD2062FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2062FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC SWITCH USB HI SIDE 2CH SOP8J
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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RQ3P300BHTB1 datasheet?p=RQ3P300BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3P300BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 9000 Stücke:
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3000+2.08 EUR
6000+2 EUR
9000+1.94 EUR
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RQ3P300BHTB1 datasheet?p=RQ3P300BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3P300BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 14405 Stücke:
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5+4.63 EUR
10+3.83 EUR
100+3.06 EUR
500+2.58 EUR
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RQ7G080ATTCR datasheet?p=RQ7G080AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
Produkt ist nicht verfügbar
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RQ7G080ATTCR datasheet?p=RQ7G080AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
auf Bestellung 465 Stücke:
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AnzahlPrivatkunde
7+3.36 EUR
10+2.13 EUR
50+1.59 EUR
100+1.43 EUR
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QH8KB5TCR datasheet?p=QH8KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.52 EUR
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QH8KB5TCR datasheet?p=QH8KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3028 Stücke:
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10+2.15 EUR
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QH8MB5TCR datasheet?p=QH8MB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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3000+0.67 EUR
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QH8MB5TCR datasheet?p=QH8MB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 4388 Stücke:
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9+2.57 EUR
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QH8MC5TCR datasheet?p=QH8MC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
auf Bestellung 3000 Stücke:
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3000+0.73 EUR
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QH8MC5TCR datasheet?p=QH8MC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 7757 Stücke:
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8+2.81 EUR
12+1.77 EUR
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100+1.18 EUR
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QH8K26TR datasheet?p=QH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8K26TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8K26TR datasheet?p=QH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8K26TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 1698 Stücke:
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12+1.88 EUR
14+1.55 EUR
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QH8JB5TCR datasheet?p=QH8JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8JB5TCR datasheet?p=QH8JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2668 Stücke:
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7+3.44 EUR
10+2.18 EUR
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QH8M22TCR datasheet?p=QH8M22&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8M22TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 9928 Stücke:
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8+2.84 EUR
11+1.94 EUR
100+1.36 EUR
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QS8K21TR datasheet?p=QS8K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K21TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QS8K21TR datasheet?p=QS8K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K21TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2251 Stücke:
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8+2.84 EUR
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QS8K11TCR datasheet?p=QS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2481 Stücke:
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9+2.56 EUR
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HS8MA2TCR1 datasheet?p=HS8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HS8MA2TCR1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS8MA2TCR1 datasheet?p=HS8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HS8MA2TCR1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 687 Stücke:
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BU45K312G-TL bu45kxxxg-e.pdf
BU45K312G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 28 Stücke:
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17+1.26 EUR
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BD450M2WFP3-CE2 datasheet?p=BD450M2WFP3-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450M2WFP3-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BD450M2WFP3-CE2 datasheet?p=BD450M2WFP3-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450M2WFP3-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 9719 Stücke:
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6+3.77 EUR
10+3.39 EUR
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BD450M5FP2-CZE2 datasheet?p=BD450M5FP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450M5FP2-CZE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
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500+1.76 EUR
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BD450M5FP2-CZE2 datasheet?p=BD450M5FP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450M5FP2-CZE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
auf Bestellung 699 Stücke:
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7+3.27 EUR
10+2.4 EUR
25+2.19 EUR
100+1.95 EUR
250+1.83 EUR
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RF1501TF3SC9 datasheet?p=RF1501TF3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF1501TF3SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 445 Stücke:
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AnzahlPrivatkunde
4+6.06 EUR
10+3.92 EUR
50+3 EUR
100+2.71 EUR
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QS5Y2FSTR datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5Y2FSTR
Hersteller: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 6000 Stücke:
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3000+0.4 EUR
6000+0.39 EUR
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QS5Y2FSTR datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5Y2FSTR
Hersteller: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 9159 Stücke:
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18+1.21 EUR
21+1.04 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.45 EUR
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DTA143XU3T106 datasheet?p=DTA143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143XU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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