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ESR25JZPF1000 ESR25JZPF1000 Rohm Semiconductor esr-e.pdf Description: RES 100 OHM 1% 1W 1210
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
auf Bestellung 11596 Stücke:
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49+0.36 EUR
71+0.25 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
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R6020ENXC7G R6020ENXC7G Rohm Semiconductor datasheet?p=R6020ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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R6004ENXC7G R6004ENXC7G Rohm Semiconductor datasheet?p=R6004ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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R6009ENXC7G R6009ENXC7G Rohm Semiconductor datasheet?p=R6009ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
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R6015KNXC7G R6015KNXC7G Rohm Semiconductor datasheet?p=R6015KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 989 Stücke:
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R6015ENXC7G R6015ENXC7G Rohm Semiconductor datasheet?p=R6015ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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R6009KNXC7G R6009KNXC7G Rohm Semiconductor datasheet?p=R6009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 551 Stücke:
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R6024KNXC7G R6024KNXC7G Rohm Semiconductor datasheet?p=R6024KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 955 Stücke:
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R6030KNXC7G R6030KNXC7G Rohm Semiconductor datasheet?p=R6030KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 827 Stücke:
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R6006KNXC7G R6006KNXC7G Rohm Semiconductor datasheet?p=R6006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 974 Stücke:
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R6006JNXC7G R6006JNXC7G Rohm Semiconductor datasheet?p=R6006JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
auf Bestellung 799 Stücke:
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R6007ENXC7G R6007ENXC7G Rohm Semiconductor datasheet?p=R6007ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 1996 Stücke:
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R6007KNXC7G R6007KNXC7G Rohm Semiconductor datasheet?p=R6007KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 945 Stücke:
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R6008ANX R6008ANX Rohm Semiconductor R6008ANX Description: MOSFET N-CH 600V 8A TO-220FM
Produkt ist nicht verfügbar
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R6008FNX R6008FNX Rohm Semiconductor r6008fnx.pdf Description: MOSFET N-CH 600V 8A TO-220FM
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R6004KNJTL R6004KNJTL Rohm Semiconductor r6004knjtl-e.pdf Description: MOSFET N-CHANNEL 600V 4A TO263
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R6008FNJTL R6008FNJTL Rohm Semiconductor r6008fnj-e.pdf Description: MOSFET N-CH 600V 8A LPTS
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R6007KNX R6007KNX Rohm Semiconductor r6007knx-e.pdf Description: MOSFET N-CH 600V 7A TO220FM
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R6007KNX R6007KNX Rohm Semiconductor r6007knx-e.pdf Description: MOSFET N-CH 600V 7A TO220FM
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BD7997FS-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT SMD
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UDZLVFHTE-1751 UDZLVFHTE-1751 Rohm Semiconductor udzlvfhte-1751-e.pdf Description: DIODE ZENER 51V 200MW UMD2
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UDZLVFHTE-1751 UDZLVFHTE-1751 Rohm Semiconductor udzlvfhte-1751-e.pdf Description: DIODE ZENER 51V 200MW UMD2
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SDR03EZPJ120 SDR03EZPJ120 Rohm Semiconductor sdr-e.pdf Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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SDR03EZPJ120 SDR03EZPJ120 Rohm Semiconductor sdr-e.pdf Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
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BD41044FJ-CE2 BD41044FJ-CE2 Rohm Semiconductor datasheet?p=BD41044FJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BD41044FJ-CE2 BD41044FJ-CE2 Rohm Semiconductor datasheet?p=BD41044FJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BA033ST BA033ST Rohm Semiconductor Description: IC REG LINEAR 3.3V 1A TO220FP-5
Current - Supply (Max): 5 mA
Protection Features: Over Current, Over Temperature, Over Voltage
PSRR: 55dB (120Hz)
Part Status: Not For New Designs
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220FP-5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack
Packaging: Tube
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BZX84C27VLYFHT116 BZX84C27VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C27VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 27V 250MW SOT23
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
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BZX84C27VLYFHT116 BZX84C27VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C27VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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109+0.16 EUR
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BZX84C27VLYT116 BZX84C27VLYT116 Rohm Semiconductor datasheet?p=BZX84C27VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
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BZX84C27VLYT116 BZX84C27VLYT116 Rohm Semiconductor datasheet?p=BZX84C27VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 27V 250MW SOT23
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
auf Bestellung 2744 Stücke:
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RQ6A045APTCR RQ6A045APTCR Rohm Semiconductor datasheet?p=RQ6A045AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
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RQ7E110AJTCR RQ7E110AJTCR Rohm Semiconductor datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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BM531Q11-Z BM531Q11-Z Rohm Semiconductor datasheet?p=BM531Q11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
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QST2TR QST2TR Rohm Semiconductor datasheet?p=QST2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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QST2TR QST2TR Rohm Semiconductor datasheet?p=QST2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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BD9S300MUF-CE2 BD9S300MUF-CE2 Rohm Semiconductor datasheet?p=BD9S300MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 16VQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
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BD9S300MUF-CE2 BD9S300MUF-CE2 Rohm Semiconductor datasheet?p=BD9S300MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 16VQFN
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
auf Bestellung 2890 Stücke:
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BD9P205MUF-CE2 BD9P205MUF-CE2 Rohm Semiconductor datasheet?p=BD9P205MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD9P205MUF-CE2 BD9P205MUF-CE2 Rohm Semiconductor datasheet?p=BD9P205MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2288 Stücke:
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2SCR587D3TL1 2SCR587D3TL1 Rohm Semiconductor datasheet?p=2SCR587D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
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2SCR587D3TL1 2SCR587D3TL1 Rohm Semiconductor datasheet?p=2SCR587D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
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2SCR583D3TL1 2SCR583D3TL1 Rohm Semiconductor datasheet?p=2SCR583D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SCR583D3TL1 2SCR583D3TL1 Rohm Semiconductor datasheet?p=2SCR583D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
auf Bestellung 2621 Stücke:
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BA17806FP-E2 BA17806FP-E2 Rohm Semiconductor datasheet?p=BA17806FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
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BA17806FP-E2 BA17806FP-E2 Rohm Semiconductor datasheet?p=BA17806FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
auf Bestellung 974 Stücke:
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R6504KND3TL1 R6504KND3TL1 Rohm Semiconductor datasheet?p=R6504KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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R6504KND3TL1 R6504KND3TL1 Rohm Semiconductor datasheet?p=R6504KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1560 Stücke:
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BSM250D17P2E004 BSM250D17P2E004 Rohm Semiconductor datasheet?p=BSM250D17P2E004&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
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BSM180D12P2E002 BSM180D12P2E002 Rohm Semiconductor Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
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RFN2LAM6STFTR RFN2LAM6STFTR Rohm Semiconductor datasheet?p=RFN2LAM6STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RFN2LAM6STFTR RFN2LAM6STFTR Rohm Semiconductor datasheet?p=RFN2LAM6STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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25+0.73 EUR
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500+0.39 EUR
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RF071L4STFTE25 RF071L4STFTE25 Rohm Semiconductor rf071l4stf.pdf Description: FAST RECOVERY DIODE (AEC-Q101 QU
Produkt ist nicht verfügbar
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RF071L4STFTE25 RF071L4STFTE25 Rohm Semiconductor rf071l4stf.pdf Description: FAST RECOVERY DIODE (AEC-Q101 QU
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RF05VYM2SFHTR RF05VYM2SFHTR Rohm Semiconductor datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF05VYM2SFHTR RF05VYM2SFHTR Rohm Semiconductor datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 15054 Stücke:
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BD9P105EFV-CE2 BD9P105EFV-CE2 Rohm Semiconductor datasheet?p=BD9P105EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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BD9P105EFV-CE2 BD9P105EFV-CE2 Rohm Semiconductor datasheet?p=BD9P105EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5000 Stücke:
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BD9P155EFV-CE2 BD9P155EFV-CE2 Rohm Semiconductor datasheet?p=BD9P155EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD9P155EFV-CE2 BD9P155EFV-CE2 Rohm Semiconductor datasheet?p=BD9P155EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 11005 Stücke:
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ESR25JZPF1000 esr-e.pdf
ESR25JZPF1000
Hersteller: Rohm Semiconductor
Description: RES 100 OHM 1% 1W 1210
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
auf Bestellung 11596 Stücke:
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27+0.67 EUR
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R6020ENXC7G datasheet?p=R6020ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 850 Stücke:
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Anzahl Preis
4+4.7 EUR
50+3.18 EUR
100+3.16 EUR
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R6004ENXC7G datasheet?p=R6004ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 815 Stücke:
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R6009ENXC7G datasheet?p=R6009ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
4+5.54 EUR
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R6015KNXC7G datasheet?p=R6015KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 989 Stücke:
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5+3.94 EUR
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R6015ENXC7G datasheet?p=R6015ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
3+6.09 EUR
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R6009KNXC7G datasheet?p=R6009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 551 Stücke:
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Anzahl Preis
4+4.47 EUR
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R6024KNXC7G datasheet?p=R6024KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 955 Stücke:
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Anzahl Preis
4+5.19 EUR
50+2.6 EUR
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500+1.91 EUR
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R6030KNXC7G datasheet?p=R6030KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 827 Stücke:
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3+5.91 EUR
50+3 EUR
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R6006KNXC7G datasheet?p=R6006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 974 Stücke:
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Anzahl Preis
6+3.15 EUR
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R6006JNXC7G datasheet?p=R6006JNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006JNXC7G
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
auf Bestellung 799 Stücke:
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Anzahl Preis
4+4.98 EUR
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R6007ENXC7G datasheet?p=R6007ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6007ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 1996 Stücke:
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Anzahl Preis
4+4.88 EUR
50+2.39 EUR
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500+1.95 EUR
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R6007KNXC7G datasheet?p=R6007KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6007KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 945 Stücke:
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Anzahl Preis
6+2.99 EUR
50+1.73 EUR
100+1.67 EUR
500+0.88 EUR
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R6008ANX R6008ANX
R6008ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Produkt ist nicht verfügbar
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R6008FNX r6008fnx.pdf
R6008FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
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R6004KNJTL r6004knjtl-e.pdf
R6004KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 4A TO263
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R6008FNJTL r6008fnj-e.pdf
R6008FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
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R6007KNX r6007knx-e.pdf
R6007KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
auf Bestellung 442 Stücke:
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R6007KNX r6007knx-e.pdf
R6007KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
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BD7997FS-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
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UDZLVFHTE-1751 udzlvfhte-1751-e.pdf
UDZLVFHTE-1751
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
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UDZLVFHTE-1751 udzlvfhte-1751-e.pdf
UDZLVFHTE-1751
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
auf Bestellung 2990 Stücke:
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SDR03EZPJ120 sdr-e.pdf
SDR03EZPJ120
Hersteller: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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SDR03EZPJ120 sdr-e.pdf
SDR03EZPJ120
Hersteller: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
auf Bestellung 3393 Stücke:
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Anzahl Preis
84+0.21 EUR
182+0.097 EUR
278+0.063 EUR
327+0.054 EUR
500+0.038 EUR
1000+0.033 EUR
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BD41044FJ-CE2 datasheet?p=BD41044FJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD41044FJ-CE2
Hersteller: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BD41044FJ-CE2 datasheet?p=BD41044FJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD41044FJ-CE2
Hersteller: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1284 Stücke:
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Anzahl Preis
6+3.1 EUR
10+2.79 EUR
25+2.63 EUR
100+2.24 EUR
250+2.1 EUR
500+1.84 EUR
1000+1.53 EUR
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BA033ST
BA033ST
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 1A TO220FP-5
Current - Supply (Max): 5 mA
Protection Features: Over Current, Over Temperature, Over Voltage
PSRR: 55dB (120Hz)
Part Status: Not For New Designs
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220FP-5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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BZX84C27VLYFHT116 datasheet?p=BZX84C27VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C27VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
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BZX84C27VLYFHT116 datasheet?p=BZX84C27VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C27VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2952 Stücke:
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Anzahl Preis
36+0.49 EUR
54+0.33 EUR
109+0.16 EUR
1000+0.15 EUR
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BZX84C27VLYT116 datasheet?p=BZX84C27VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C27VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
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BZX84C27VLYT116 datasheet?p=BZX84C27VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C27VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
auf Bestellung 2744 Stücke:
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Anzahl Preis
42+0.42 EUR
61+0.29 EUR
123+0.14 EUR
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RQ6A045APTCR datasheet?p=RQ6A045AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6A045APTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
auf Bestellung 2733 Stücke:
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Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
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RQ7E110AJTCR datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E110AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
auf Bestellung 341 Stücke:
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8+2.24 EUR
13+1.41 EUR
100+0.94 EUR
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BM531Q11-Z datasheet?p=BM531Q11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM531Q11-Z
Hersteller: Rohm Semiconductor
Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
auf Bestellung 349 Stücke:
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4+4.42 EUR
10+2.86 EUR
100+1.96 EUR
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QST2TR datasheet?p=QST2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QST2TR
Hersteller: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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QST2TR datasheet?p=QST2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QST2TR
Hersteller: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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Anzahl Preis
16+1.11 EUR
19+0.96 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.47 EUR
Mindestbestellmenge: 16
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BD9S300MUF-CE2 datasheet?p=BD9S300MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9S300MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
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BD9S300MUF-CE2 datasheet?p=BD9S300MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9S300MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
auf Bestellung 2890 Stücke:
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Anzahl Preis
4+4.72 EUR
10+4.23 EUR
25+3.99 EUR
100+3.4 EUR
250+3.2 EUR
500+2.8 EUR
1000+2.32 EUR
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BD9P205MUF-CE2 datasheet?p=BD9P205MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P205MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD9P205MUF-CE2 datasheet?p=BD9P205MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P205MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.83 EUR
25+3.51 EUR
100+3.16 EUR
250+3 EUR
500+2.9 EUR
1000+2.81 EUR
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2SCR587D3TL1 datasheet?p=2SCR587D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR587D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
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2SCR587D3TL1 datasheet?p=2SCR587D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR587D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.25 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.12 EUR
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2SCR583D3TL1 datasheet?p=2SCR583D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR583D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
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2SCR583D3TL1 datasheet?p=2SCR583D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR583D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
auf Bestellung 2621 Stücke:
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Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
500+1.22 EUR
1000+1.12 EUR
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BA17806FP-E2 datasheet?p=BA17806FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA17806FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
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BA17806FP-E2 datasheet?p=BA17806FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA17806FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
auf Bestellung 974 Stücke:
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6+3.38 EUR
10+2.1 EUR
25+1.76 EUR
100+1.39 EUR
250+1.2 EUR
500+1.09 EUR
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R6504KND3TL1 datasheet?p=R6504KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
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R6504KND3TL1 datasheet?p=R6504KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1560 Stücke:
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Anzahl Preis
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.08 EUR
1000+1.02 EUR
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BSM250D17P2E004 datasheet?p=BSM250D17P2E004&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSM250D17P2E004
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 7 Stücke:
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1+1484.7 EUR
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BSM180D12P2E002
BSM180D12P2E002
Hersteller: Rohm Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
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1+1241.03 EUR
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RFN2LAM6STFTR datasheet?p=RFN2LAM6STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2LAM6STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFN2LAM6STFTR datasheet?p=RFN2LAM6STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2LAM6STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 1420 Stücke:
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17+1.09 EUR
25+0.73 EUR
100+0.5 EUR
500+0.39 EUR
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RF071L4STFTE25 rf071l4stf.pdf
RF071L4STFTE25
Hersteller: Rohm Semiconductor
Description: FAST RECOVERY DIODE (AEC-Q101 QU
Produkt ist nicht verfügbar
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RF071L4STFTE25 rf071l4stf.pdf
RF071L4STFTE25
Hersteller: Rohm Semiconductor
Description: FAST RECOVERY DIODE (AEC-Q101 QU
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RF05VYM2SFHTR datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
RF05VYM2SFHTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 6000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
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RF05VYM2SFHTR datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
RF05VYM2SFHTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 15054 Stücke:
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28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
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BD9P105EFV-CE2 datasheet?p=BD9P105EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P105EFV-CE2
Hersteller: Rohm Semiconductor
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 2500 Stücke:
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2500+2.76 EUR
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BD9P105EFV-CE2 datasheet?p=BD9P105EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P105EFV-CE2
Hersteller: Rohm Semiconductor
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5000 Stücke:
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4+5.49 EUR
10+4.93 EUR
25+4.66 EUR
100+4.04 EUR
250+3.83 EUR
500+3.44 EUR
1000+2.9 EUR
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BD9P155EFV-CE2 datasheet?p=BD9P155EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P155EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
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2500+2.38 EUR
5000+2.33 EUR
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BD9P155EFV-CE2 datasheet?p=BD9P155EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P155EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 11005 Stücke:
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Anzahl Preis
4+4.51 EUR
10+3.36 EUR
25+3.08 EUR
100+2.77 EUR
250+2.62 EUR
500+2.53 EUR
1000+2.45 EUR
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