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UMT4403U3HZGT106 UMT4403U3HZGT106 Rohm Semiconductor datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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100+0.58 EUR
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1000+0.37 EUR
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DTA124XU3HZGT106 DTA124XU3HZGT106 Rohm Semiconductor datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XU3HZGT106 DTA124XU3HZGT106 Rohm Semiconductor datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BAV199HYT116 BAV199HYT116 Rohm Semiconductor datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAV199HYT116 BAV199HYT116 Rohm Semiconductor datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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GDZ8EPT2R6.2B Rohm Semiconductor Description: DIODE ZENER GMD2
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GDZT2R6.2B GDZT2R6.2B Rohm Semiconductor Description: DIODE ZENER 6.2V 100MW GMD2
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UFZVTE-176.2B UFZVTE-176.2B Rohm Semiconductor ufzvte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVTE-176.2B UFZVTE-176.2B Rohm Semiconductor ufzvte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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PDZVTR6.2B PDZVTR6.2B Rohm Semiconductor datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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PDZVTR6.2B PDZVTR6.2B Rohm Semiconductor datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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UDZWTE-176.2B UDZWTE-176.2B Rohm Semiconductor Description: DIODE ZENER UMD2
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UFZVFHTE-176.2B UFZVFHTE-176.2B Rohm Semiconductor ufzvfhte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVFHTE-176.2B UFZVFHTE-176.2B Rohm Semiconductor ufzvfhte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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YFZVFHTR6.2B YFZVFHTR6.2B Rohm Semiconductor datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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YFZVFHTR6.2B YFZVFHTR6.2B Rohm Semiconductor datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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SIM-032SSW1 Rohm Semiconductor Description: INFRARED EMITTER
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BA7809FP-E2 BA7809FP-E2 Rohm Semiconductor datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA7809FP-E2 BA7809FP-E2 Rohm Semiconductor datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA00AST BA00AST Rohm Semiconductor BA00ST_BA00SFP.pdf Description: IC REG LINEAR POS ADJ 1A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Full Pack
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220-5 Full-Pak
Voltage - Output (Max): 25V
Voltage - Output (Min/Fixed): 1.225V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
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RGS80TSX2DGC11 RGS80TSX2DGC11 Rohm Semiconductor datasheet?p=RGS80TSX2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
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R6030ENXC7G R6030ENXC7G Rohm Semiconductor datasheet?p=R6030ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 30A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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R6030ENZC17 R6030ENZC17 Rohm Semiconductor datasheet?p=R6030ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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SP8K31HZGTB SP8K31HZGTB Rohm Semiconductor datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K31HZGTB SP8K31HZGTB Rohm Semiconductor datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB SP8K32HZGTB Rohm Semiconductor datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB SP8K32HZGTB Rohm Semiconductor datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K33HZGTB SP8K33HZGTB Rohm Semiconductor datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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SP8K33HZGTB SP8K33HZGTB Rohm Semiconductor datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
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4+4.52 EUR
10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
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SML813WBC8W1HP Rohm Semiconductor SML813WBC8W.pdf Description: LED INDICATION SMD
Produkt ist nicht verfügbar
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SML813WBC8W1AP SML813WBC8W1AP Rohm Semiconductor SML813WBC8W.pdf Description: LED INDICATION SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: White
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 1305 (3412)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
Produkt ist nicht verfügbar
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RD3P200SNTL1 RD3P200SNTL1 Rohm Semiconductor datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 5000 Stücke:
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RD3P200SNTL1 RD3P200SNTL1 Rohm Semiconductor datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 6980 Stücke:
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R8007AND3FRATL R8007AND3FRATL Rohm Semiconductor datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2500 Stücke:
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R8007AND3FRATL R8007AND3FRATL Rohm Semiconductor datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 4975 Stücke:
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2+9.19 EUR
10+8.26 EUR
100+6.76 EUR
500+5.76 EUR
1000+4.86 EUR
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RD3H200SNTL1 RD3H200SNTL1 Rohm Semiconductor datasheet?p=RD3H200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H200SNTL1 RD3H200SNTL1 Rohm Semiconductor datasheet?p=RD3H200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 1511 Stücke:
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7+2.76 EUR
10+2.48 EUR
100+1.93 EUR
500+1.60 EUR
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R6004PND3FRATL R6004PND3FRATL Rohm Semiconductor datasheet?p=R6004PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.28 EUR
Mindestbestellmenge: 2500
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R6004PND3FRATL R6004PND3FRATL Rohm Semiconductor datasheet?p=R6004PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4543 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+3.93 EUR
100+3.18 EUR
500+2.82 EUR
1000+2.42 EUR
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RD3L220SNTL1 RD3L220SNTL1 Rohm Semiconductor datasheet?p=RD3L220SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD3L220SNTL1 RD3L220SNTL1 Rohm Semiconductor datasheet?p=RD3L220SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 22A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
auf Bestellung 436 Stücke:
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5+4.08 EUR
10+2.62 EUR
100+1.79 EUR
Mindestbestellmenge: 5
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RD3L050SNTL1 RD3L050SNTL1 Rohm Semiconductor datasheet?p=RD3L050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD3L050SNTL1 RD3L050SNTL1 Rohm Semiconductor datasheet?p=RD3L050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 1449 Stücke:
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6+3.13 EUR
10+2.00 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.97 EUR
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RD3H080SPFRATL RD3H080SPFRATL Rohm Semiconductor datasheet?p=RD3H080SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H080SPFRATL RD3H080SPFRATL Rohm Semiconductor datasheet?p=RD3H080SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 1643 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.60 EUR
1000+1.26 EUR
Mindestbestellmenge: 7
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RD3L050SNFRATL RD3L050SNFRATL Rohm Semiconductor datasheet?p=RD3L050SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD3L050SNFRATL RD3L050SNFRATL Rohm Semiconductor datasheet?p=RD3L050SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2369 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
10+2.44 EUR
25+2.06 EUR
100+1.63 EUR
250+1.42 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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RD3P100SNTL1 RD3P100SNTL1 Rohm Semiconductor datasheet?p=RD3P100SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.91 EUR
Mindestbestellmenge: 2500
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RD3P100SNTL1 RD3P100SNTL1 Rohm Semiconductor datasheet?p=RD3P100SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 16439 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.19 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.08 EUR
Mindestbestellmenge: 6
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RD3G600GNTL RD3G600GNTL Rohm Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
Produkt ist nicht verfügbar
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RD3G600GNTL RD3G600GNTL Rohm Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
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RD3H200SNFRATL RD3H200SNFRATL Rohm Semiconductor datasheet?p=RD3H200SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H200SNFRATL RD3H200SNFRATL Rohm Semiconductor datasheet?p=RD3H200SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
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RD3P050SNTL1 RD3P050SNTL1 Rohm Semiconductor datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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RD3P050SNTL1 RD3P050SNTL1 Rohm Semiconductor datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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R6006JND3TL1 R6006JND3TL1 Rohm Semiconductor datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Produkt ist nicht verfügbar
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R6006JND3TL1 R6006JND3TL1 Rohm Semiconductor datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
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BAT54SHYT116 BAT54SHYT116 Rohm Semiconductor datasheet?p=BAT54SHY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54SHYT116 BAT54SHYT116 Rohm Semiconductor datasheet?p=BAT54SHY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1372 Stücke:
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500+0.26 EUR
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BZX84C4V3LYT116 BZX84C4V3LYT116 Rohm Semiconductor datasheet?p=BZX84C4V3LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
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UMT4403U3HZGT106 datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2887 Stücke:
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Anzahl Preis
19+0.97 EUR
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100+0.58 EUR
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DTA124XU3HZGT106 datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3HZGT106
Hersteller: Rohm Semiconductor
Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XU3HZGT106 datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3HZGT106
Hersteller: Rohm Semiconductor
Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 609 Stücke:
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Anzahl Preis
27+0.67 EUR
33+0.55 EUR
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500+0.19 EUR
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BAV199HYT116 datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV199HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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9000+0.09 EUR
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BAV199HYT116 datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV199HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 10151 Stücke:
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GDZ8EPT2R6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER GMD2
Produkt ist nicht verfügbar
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GDZT2R6.2B
GDZT2R6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW GMD2
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UFZVTE-176.2B ufzvte-176.2b-e.pdf
UFZVTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVTE-176.2B ufzvte-176.2b-e.pdf
UFZVTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
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PDZVTR6.2B datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
PDZVTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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3000+0.19 EUR
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PDZVTR6.2B datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
PDZVTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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25+0.72 EUR
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UDZWTE-176.2B
UDZWTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER UMD2
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UFZVFHTE-176.2B ufzvfhte-176.2b-e.pdf
UFZVFHTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVFHTE-176.2B ufzvfhte-176.2b-e.pdf
UFZVFHTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
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YFZVFHTR6.2B datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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YFZVFHTR6.2B datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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34+0.53 EUR
50+0.36 EUR
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SIM-032SSW1
Hersteller: Rohm Semiconductor
Description: INFRARED EMITTER
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BA7809FP-E2 datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA7809FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Produkt ist nicht verfügbar
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BA7809FP-E2 datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA7809FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
15+1.17 EUR
25+1.06 EUR
100+0.94 EUR
Mindestbestellmenge: 11
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BA00AST BA00ST_BA00SFP.pdf
BA00AST
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Full Pack
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220-5 Full-Pak
Voltage - Output (Max): 25V
Voltage - Output (Min/Fixed): 1.225V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
Produkt ist nicht verfügbar
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RGS80TSX2DGC11 datasheet?p=RGS80TSX2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TSX2DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 193 Stücke:
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Anzahl Preis
1+21.47 EUR
30+12.99 EUR
120+11.14 EUR
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R6030ENXC7G datasheet?p=R6030ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 30A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 846 Stücke:
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Anzahl Preis
3+6.58 EUR
50+5.04 EUR
100+4.93 EUR
500+2.32 EUR
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R6030ENZC17 datasheet?p=R6030ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 180 Stücke:
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Anzahl Preis
3+6.64 EUR
30+5.51 EUR
120+2.79 EUR
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SP8K31HZGTB datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K31HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
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SP8K31HZGTB datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K31HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 4880 Stücke:
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Anzahl Preis
6+3.41 EUR
10+2.18 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.08 EUR
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SP8K32HZGTB datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K32HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K32HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2114 Stücke:
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Anzahl Preis
5+3.78 EUR
10+2.43 EUR
100+1.66 EUR
500+1.32 EUR
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SP8K33HZGTB datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K33HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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SP8K33HZGTB datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K33HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
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SML813WBC8W1HP SML813WBC8W.pdf
Hersteller: Rohm Semiconductor
Description: LED INDICATION SMD
Produkt ist nicht verfügbar
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SML813WBC8W1AP SML813WBC8W.pdf
SML813WBC8W1AP
Hersteller: Rohm Semiconductor
Description: LED INDICATION SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: White
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 1305 (3412)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
Produkt ist nicht verfügbar
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RD3P200SNTL1 datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+1.72 EUR
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RD3P200SNTL1 datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 6980 Stücke:
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Anzahl Preis
5+3.77 EUR
10+3.38 EUR
100+2.72 EUR
500+2.23 EUR
1000+1.85 EUR
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R8007AND3FRATL datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8007AND3FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+4.61 EUR
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R8007AND3FRATL datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8007AND3FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 4975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
10+8.26 EUR
100+6.76 EUR
500+5.76 EUR
1000+4.86 EUR
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RD3H200SNTL1 datasheet?p=RD3H200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H200SNTL1 datasheet?p=RD3H200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 1511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.48 EUR
100+1.93 EUR
500+1.60 EUR
1000+1.26 EUR
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R6004PND3FRATL datasheet?p=R6004PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004PND3FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.28 EUR
Mindestbestellmenge: 2500
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R6004PND3FRATL datasheet?p=R6004PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004PND3FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.93 EUR
100+3.18 EUR
500+2.82 EUR
1000+2.42 EUR
Mindestbestellmenge: 4
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RD3L220SNTL1 datasheet?p=RD3L220SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L220SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
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RD3L220SNTL1 datasheet?p=RD3L220SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L220SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.62 EUR
100+1.79 EUR
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RD3L050SNTL1 datasheet?p=RD3L050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L050SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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RD3L050SNTL1 datasheet?p=RD3L050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L050SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 1449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
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RD3H080SPFRATL datasheet?p=RD3H080SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H080SPFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H080SPFRATL datasheet?p=RD3H080SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H080SPFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 1643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.60 EUR
1000+1.26 EUR
Mindestbestellmenge: 7
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RD3L050SNFRATL datasheet?p=RD3L050SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L050SNFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RD3L050SNFRATL datasheet?p=RD3L050SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L050SNFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.91 EUR
10+2.44 EUR
25+2.06 EUR
100+1.63 EUR
250+1.42 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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RD3P100SNTL1 datasheet?p=RD3P100SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P100SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
Mindestbestellmenge: 2500
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RD3P100SNTL1 datasheet?p=RD3P100SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P100SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 16439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.19 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.08 EUR
Mindestbestellmenge: 6
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RD3G600GNTL datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G600GNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
Produkt ist nicht verfügbar
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RD3G600GNTL datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G600GNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+2.89 EUR
100+1.98 EUR
500+1.59 EUR
1000+1.47 EUR
Mindestbestellmenge: 4
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RD3H200SNFRATL datasheet?p=RD3H200SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H200SNFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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RD3H200SNFRATL datasheet?p=RD3H200SNFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H200SNFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 2376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+2.51 EUR
100+2.02 EUR
500+1.66 EUR
1000+1.37 EUR
Mindestbestellmenge: 7
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RD3P050SNTL1 datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P050SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.60 EUR
5000+0.57 EUR
Mindestbestellmenge: 2500
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RD3P050SNTL1 datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P050SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 9312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
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R6006JND3TL1 datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006JND3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Produkt ist nicht verfügbar
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R6006JND3TL1 datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006JND3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+3.22 EUR
Mindestbestellmenge: 5
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BAT54SHYT116 datasheet?p=BAT54SHY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54SHYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54SHYT116 datasheet?p=BAT54SHY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54SHYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.52 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 27
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BZX84C4V3LYT116 datasheet?p=BZX84C4V3LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C4V3LYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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