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EMD72T2R EMD72T2R Rohm Semiconductor datasheet?p=EMD72&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 18647 Stücke:
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29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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EMD52T2R EMD52T2R Rohm Semiconductor datasheet?p=EMD52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
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8000+0.1 EUR
Mindestbestellmenge: 8000
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EMD52T2R EMD52T2R Rohm Semiconductor datasheet?p=EMD52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 32
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UMB3NFHATN UMB3NFHATN Rohm Semiconductor datasheet?p=UMB3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMB3NFHATN UMB3NFHATN Rohm Semiconductor datasheet?p=UMB3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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UMH4NFHATN UMH4NFHATN Rohm Semiconductor datasheet?p=UMH4NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
Mindestbestellmenge: 3000
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UMH4NFHATN UMH4NFHATN Rohm Semiconductor datasheet?p=UMH4NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5969 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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DTA013ZMT2L DTA013ZMT2L Rohm Semiconductor dta013zmt2l-e.pdf Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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DTA013ZMT2L DTA013ZMT2L Rohm Semiconductor dta013zmt2l-e.pdf Description: PNP DIGITAL TRANSISTOR (WITH BUI
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UMD25NTR UMD25NTR Rohm Semiconductor datasheet?p=UMD25N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
auf Bestellung 6000 Stücke:
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3000+0.14 EUR
Mindestbestellmenge: 3000
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UMD25NTR UMD25NTR Rohm Semiconductor datasheet?p=UMD25N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
auf Bestellung 11840 Stücke:
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28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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DTA123EMFHAT2L DTA123EMFHAT2L Rohm Semiconductor datasheet?p=DTA123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DTA123EMFHAT2L DTA123EMFHAT2L Rohm Semiconductor datasheet?p=DTA123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 7640 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
2000+0.075 EUR
Mindestbestellmenge: 42
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DTA024XMT2L DTA024XMT2L Rohm Semiconductor Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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DTA024XMT2L DTA024XMT2L Rohm Semiconductor Description: PNP DIGITAL TRANSISTOR (WITH BUI
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DTC043XUBTL DTC043XUBTL Rohm Semiconductor dtc043xebtl-e.pdf Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC043XUBTL DTC043XUBTL Rohm Semiconductor dtc043xebtl-e.pdf Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 38 Stücke:
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DTC043XMT2L DTC043XMT2L Rohm Semiconductor dtc043xebtl-e.pdf Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC043XMT2L DTC043XMT2L Rohm Semiconductor dtc043xebtl-e.pdf Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 7732 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
47+0.37 EUR
100+0.2 EUR
500+0.13 EUR
1000+0.089 EUR
2000+0.08 EUR
Mindestbestellmenge: 39
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DTA123JMFHAT2L DTA123JMFHAT2L Rohm Semiconductor datasheet?p=DTA123JMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTA123JMFHAT2L DTA123JMFHAT2L Rohm Semiconductor datasheet?p=DTA123JMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.088 EUR
2000+0.076 EUR
Mindestbestellmenge: 39
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DTA143XMFHAT2L DTA143XMFHAT2L Rohm Semiconductor datasheet?p=DTA143XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA143XMFHAT2L DTA143XMFHAT2L Rohm Semiconductor datasheet?p=DTA143XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 272 Stücke:
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42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
Mindestbestellmenge: 42
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DTC124XMFHAT2L DTC124XMFHAT2L Rohm Semiconductor datasheet?p=DTC124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC124XMFHAT2L DTC124XMFHAT2L Rohm Semiconductor datasheet?p=DTC124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
Mindestbestellmenge: 48
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DTC123ECAT116 DTC123ECAT116 Rohm Semiconductor datasheet?p=DTC123ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC123ECAT116 DTC123ECAT116 Rohm Semiconductor datasheet?p=DTC123ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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SP8M4HZGTB SP8M4HZGTB Rohm Semiconductor datasheet?p=SP8M4HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M4HZGTB SP8M4HZGTB Rohm Semiconductor datasheet?p=SP8M4HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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TFZGTR18B TFZGTR18B Rohm Semiconductor Description: DIODE ZENER 18V 500MW TUMD2
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BZX84B6V2LYFHT116 BZX84B6V2LYFHT116 Rohm Semiconductor datasheet?p=BZX84B6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX84B6V2LYFHT116 BZX84B6V2LYFHT116 Rohm Semiconductor datasheet?p=BZX84B6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BD60910GU-E2 BD60910GU-E2 Rohm Semiconductor BD60910GU.pdf Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
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SDR03EZPF4301 SDR03EZPF4301 Rohm Semiconductor sdr-e.pdf Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
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P02SCT3040KR-EVK-001 P02SCT3040KR-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
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EMH51T2R EMH51T2R Rohm Semiconductor datasheet?p=EMH51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
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DTC123YCAHZGT116 DTC123YCAHZGT116 Rohm Semiconductor datasheet?p=DTC123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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DTC123YCAHZGT116 DTC123YCAHZGT116 Rohm Semiconductor datasheet?p=DTC123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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BD42754FP2-CE2 BD42754FP2-CE2 Rohm Semiconductor bd42754fp2-c-e.pdf Description: IC REG LINEAR 5V 500MA TO263-5
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BD42754FP2-CE2 BD42754FP2-CE2 Rohm Semiconductor bd42754fp2-c-e.pdf Description: IC REG LINEAR 5V 500MA TO263-5
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BD93E11GWL-EVK-001 BD93E11GWL-EVK-001 Rohm Semiconductor bd93e11gwl-e.pdf Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
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BD93E11GWL-E2 BD93E11GWL-E2 Rohm Semiconductor datasheet?p=BD93E11GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
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BD93E11GWL-E2 BD93E11GWL-E2 Rohm Semiconductor datasheet?p=BD93E11GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
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QH8KC5TCR QH8KC5TCR Rohm Semiconductor datasheet?p=QH8KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KC5TCR QH8KC5TCR Rohm Semiconductor datasheet?p=QH8KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KC6TCR QH8KC6TCR Rohm Semiconductor datasheet?p=QH8KC6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KC6TCR QH8KC6TCR Rohm Semiconductor datasheet?p=QH8KC6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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RV4E031RPHZGTCR1 RV4E031RPHZGTCR1 Rohm Semiconductor datasheet?p=RV4E031RPHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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RV4E031RPHZGTCR1 RV4E031RPHZGTCR1 Rohm Semiconductor datasheet?p=RV4E031RPHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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500+0.65 EUR
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RUQ050N02HZGTR RUQ050N02HZGTR Rohm Semiconductor datasheet?p=RUQ050N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
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RUQ050N02HZGTR RUQ050N02HZGTR Rohm Semiconductor datasheet?p=RUQ050N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
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RSQ030N08HZGTR RSQ030N08HZGTR Rohm Semiconductor rsq030n08hzgtr-e.pdf Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
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RSQ030N08HZGTR RSQ030N08HZGTR Rohm Semiconductor rsq030n08hzgtr-e.pdf Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6176 Stücke:
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100+0.73 EUR
500+0.61 EUR
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RSQ035P03HZGTR RSQ035P03HZGTR Rohm Semiconductor rsq035p03hzgtr-e.pdf Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ035P03HZGTR RSQ035P03HZGTR Rohm Semiconductor rsq035p03hzgtr-e.pdf Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2175 Stücke:
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500+0.64 EUR
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RSQ025P03HZGTR RSQ025P03HZGTR Rohm Semiconductor rsq025p03hzgtr-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ025P03HZGTR RSQ025P03HZGTR Rohm Semiconductor rsq025p03hzgtr-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 993 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
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RVQ040N05HZGTR RVQ040N05HZGTR Rohm Semiconductor datasheet?p=RVQ040N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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3000+0.49 EUR
Mindestbestellmenge: 3000
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BD800M7WFP2-CE2 BD800M7WFP2-CE2 Rohm Semiconductor datasheet?p=BD800M7WFP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
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500+3.55 EUR
1000+3 EUR
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BD800M7WFP2-CE2 BD800M7WFP2-CE2 Rohm Semiconductor datasheet?p=BD800M7WFP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
auf Bestellung 1705 Stücke:
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4+5.67 EUR
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100+4.17 EUR
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EMD72T2R datasheet?p=EMD72&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD72T2R
Hersteller: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 18647 Stücke:
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Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
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EMD52T2R datasheet?p=EMD52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD52T2R
Hersteller: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
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Anzahl Preis
8000+0.1 EUR
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EMD52T2R datasheet?p=EMD52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD52T2R
Hersteller: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
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UMB3NFHATN datasheet?p=UMB3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMB3NFHATN
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
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UMB3NFHATN datasheet?p=UMB3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMB3NFHATN
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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UMH4NFHATN datasheet?p=UMH4NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH4NFHATN
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
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UMH4NFHATN datasheet?p=UMH4NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH4NFHATN
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5969 Stücke:
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Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
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DTA013ZMT2L dta013zmt2l-e.pdf
DTA013ZMT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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DTA013ZMT2L dta013zmt2l-e.pdf
DTA013ZMT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
auf Bestellung 7647 Stücke:
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UMD25NTR datasheet?p=UMD25N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD25NTR
Hersteller: Rohm Semiconductor
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
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Anzahl Preis
3000+0.14 EUR
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UMD25NTR datasheet?p=UMD25N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD25NTR
Hersteller: Rohm Semiconductor
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
auf Bestellung 11840 Stücke:
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Anzahl Preis
28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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DTA123EMFHAT2L datasheet?p=DTA123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EMFHAT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DTA123EMFHAT2L datasheet?p=DTA123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EMFHAT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 7640 Stücke:
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Anzahl Preis
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
2000+0.075 EUR
Mindestbestellmenge: 42
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DTA024XMT2L
DTA024XMT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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DTA024XMT2L
DTA024XMT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
auf Bestellung 4300 Stücke:
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DTC043XUBTL dtc043xebtl-e.pdf
DTC043XUBTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC043XUBTL dtc043xebtl-e.pdf
DTC043XUBTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 38 Stücke:
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DTC043XMT2L dtc043xebtl-e.pdf
DTC043XMT2L
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC043XMT2L dtc043xebtl-e.pdf
DTC043XMT2L
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 7732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
47+0.37 EUR
100+0.2 EUR
500+0.13 EUR
1000+0.089 EUR
2000+0.08 EUR
Mindestbestellmenge: 39
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DTA123JMFHAT2L datasheet?p=DTA123JMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTA123JMFHAT2L datasheet?p=DTA123JMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.088 EUR
2000+0.076 EUR
Mindestbestellmenge: 39
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DTA143XMFHAT2L datasheet?p=DTA143XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143XMFHAT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA143XMFHAT2L datasheet?p=DTA143XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143XMFHAT2L
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
Mindestbestellmenge: 42
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DTC124XMFHAT2L datasheet?p=DTC124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124XMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC124XMFHAT2L datasheet?p=DTC124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124XMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
Mindestbestellmenge: 48
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DTC123ECAT116 datasheet?p=DTC123ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC123ECAT116 datasheet?p=DTC123ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
45+0.4 EUR
107+0.17 EUR
Mindestbestellmenge: 28
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SP8M4HZGTB datasheet?p=SP8M4HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M4HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SP8M4HZGTB datasheet?p=SP8M4HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M4HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1668 Stücke:
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Anzahl Preis
4+4.82 EUR
10+3.17 EUR
100+2.2 EUR
500+1.86 EUR
Mindestbestellmenge: 4
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TFZGTR18B
TFZGTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
auf Bestellung 101 Stücke:
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BZX84B6V2LYFHT116 datasheet?p=BZX84B6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B6V2LYFHT116
Hersteller: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B6V2LYFHT116 datasheet?p=BZX84B6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B6V2LYFHT116
Hersteller: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
auf Bestellung 2719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
123+0.14 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 36
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BD60910GU-E2 BD60910GU.pdf
BD60910GU-E2
Hersteller: Rohm Semiconductor
Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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SDR03EZPF4301 sdr-e.pdf
SDR03EZPF4301
Hersteller: Rohm Semiconductor
Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
Produkt ist nicht verfügbar
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P02SCT3040KR-EVK-001
P02SCT3040KR-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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EMH51T2R datasheet?p=EMH51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH51T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.11 EUR
Mindestbestellmenge: 8000
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DTC123YCAHZGT116 datasheet?p=DTC123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTC123YCAHZGT116 datasheet?p=DTC123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
93+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 59
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BD42754FP2-CE2 bd42754fp2-c-e.pdf
BD42754FP2-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
Produkt ist nicht verfügbar
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BD42754FP2-CE2 bd42754fp2-c-e.pdf
BD42754FP2-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
Mindestbestellmenge: 4
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BD93E11GWL-EVK-001 bd93e11gwl-e.pdf
BD93E11GWL-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
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Anzahl Preis
1+369.23 EUR
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BD93E11GWL-E2 datasheet?p=BD93E11GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD93E11GWL-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BD93E11GWL-E2 datasheet?p=BD93E11GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD93E11GWL-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.21 EUR
10+7.85 EUR
25+7.27 EUR
100+6.62 EUR
250+6.32 EUR
500+6.13 EUR
1000+5.98 EUR
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QH8KC5TCR datasheet?p=QH8KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KC5TCR datasheet?p=QH8KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 137 Stücke:
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Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.8 EUR
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QH8KC6TCR datasheet?p=QH8KC6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KC6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KC6TCR datasheet?p=QH8KC6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KC6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+1.85 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.9 EUR
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RV4E031RPHZGTCR1 datasheet?p=RV4E031RPHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV4E031RPHZGTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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RV4E031RPHZGTCR1 datasheet?p=RV4E031RPHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV4E031RPHZGTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.28 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.59 EUR
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RUQ050N02HZGTR datasheet?p=RUQ050N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUQ050N02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.51 EUR
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RUQ050N02HZGTR datasheet?p=RUQ050N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUQ050N02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+1.03 EUR
100+0.77 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 11
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RSQ030N08HZGTR rsq030n08hzgtr-e.pdf
RSQ030N08HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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RSQ030N08HZGTR rsq030n08hzgtr-e.pdf
RSQ030N08HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+0.99 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 14
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RSQ035P03HZGTR rsq035p03hzgtr-e.pdf
RSQ035P03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ035P03HZGTR rsq035p03hzgtr-e.pdf
RSQ035P03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.26 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
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RSQ025P03HZGTR rsq025p03hzgtr-e.pdf
RSQ025P03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ025P03HZGTR rsq025p03hzgtr-e.pdf
RSQ025P03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
Mindestbestellmenge: 10
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RVQ040N05HZGTR datasheet?p=RVQ040N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RVQ040N05HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.49 EUR
Mindestbestellmenge: 3000
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BD800M7WFP2-CE2 datasheet?p=BD800M7WFP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD800M7WFP2-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+3.55 EUR
1000+3 EUR
Mindestbestellmenge: 500
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BD800M7WFP2-CE2 datasheet?p=BD800M7WFP2-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD800M7WFP2-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+5.1 EUR
25+4.82 EUR
100+4.17 EUR
250+3.96 EUR
Mindestbestellmenge: 4
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