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R8008ANJGTL R8008ANJGTL Rohm Semiconductor datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R8003KNXC7G R8003KNXC7G Rohm Semiconductor datasheet?p=R8003KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8002KNXC7G R8002KNXC7G Rohm Semiconductor datasheet?p=R8002KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8006KNXC7G R8006KNXC7G Rohm Semiconductor datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
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R8006KNXC7G R8006KNXC7G Rohm Semiconductor datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
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R8002KND3TL1 R8002KND3TL1 Rohm Semiconductor datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8002KND3TL1 R8002KND3TL1 Rohm Semiconductor datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
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R8009KNXC7G R8009KNXC7G Rohm Semiconductor datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8009KNXC7G R8009KNXC7G Rohm Semiconductor datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8003KND3TL1 R8003KND3TL1 Rohm Semiconductor datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8003KND3TL1 R8003KND3TL1 Rohm Semiconductor datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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RSS070P05HZGTB RSS070P05HZGTB Rohm Semiconductor rss070p05hzgtb-e.pdf Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
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RSS070P05HZGTB RSS070P05HZGTB Rohm Semiconductor rss070p05hzgtb-e.pdf Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
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RGTV80TS65GC11 RGTV80TS65GC11 Rohm Semiconductor datasheet?p=RGTV80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGTV80TK65GVC11 RGTV80TK65GVC11 Rohm Semiconductor datasheet?p=RGTV80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 39A TO-3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
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BD7800FP-E2 BD7800FP-E2 Rohm Semiconductor Description: IC REG LINEAR 5A
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BZX84C3V0LYFHT116 BZX84C3V0LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
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BZX84C3V0LYFHT116 BZX84C3V0LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
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MMBZ27VCLYFHT116 MMBZ27VCLYFHT116 Rohm Semiconductor datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMBZ27VCLYFHT116 MMBZ27VCLYFHT116 Rohm Semiconductor datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BUS1DJC3GWZ-E2 BUS1DJC3GWZ-E2 Rohm Semiconductor datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
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BUS1DJC3GWZ-E2 BUS1DJC3GWZ-E2 Rohm Semiconductor datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SDR10EZPJ360 SDR10EZPJ360 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
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SDR10EZPJ360 SDR10EZPJ360 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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136+0.15 EUR
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1000+0.064 EUR
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SDR10EZPJ132 SDR10EZPJ132 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR10EZPJ132 SDR10EZPJ132 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDR10EZPJ1R0 SDR10EZPJ1R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 5000 Stücke:
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5000+0.048 EUR
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SDR10EZPJ1R0 SDR10EZPJ1R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9675 Stücke:
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50+0.42 EUR
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156+0.13 EUR
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SDR03EZPD8062 SDR03EZPD8062 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD8062 SDR03EZPD8062 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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Lieferzeit 10-14 Tag (e)
48+0.44 EUR
57+0.37 EUR
145+0.14 EUR
1000+0.061 EUR
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SDR03EZPD5112 SDR03EZPD5112 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
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SDR03EZPD5112 SDR03EZPD5112 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
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56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR03EZPD3000 SDR03EZPD3000 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
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SDR03EZPD3000 SDR03EZPD3000 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
auf Bestellung 9367 Stücke:
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56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR10EZPF1R60 SDR10EZPF1R60 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
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SDR10EZPF1R60 SDR10EZPF1R60 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
auf Bestellung 9570 Stücke:
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35+0.61 EUR
41+0.51 EUR
78+0.27 EUR
105+0.2 EUR
500+0.12 EUR
1000+0.083 EUR
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BD63525AEFV-EVK-001 BD63525AEFV-EVK-001 Rohm Semiconductor bd63xxxefv-evk-001_ug-e.pdf Description: EVAL BOARD FOR BD63525A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63525A
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
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RS1E350GNTB RS1E350GNTB Rohm Semiconductor rs1e350gntb-e.pdf Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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RS1E220ATTB1 RS1E220ATTB1 Rohm Semiconductor datasheet?p=RS1E220AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1E220ATTB1 RS1E220ATTB1 Rohm Semiconductor datasheet?p=RS1E220AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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RS1E350BNTB1 RS1E350BNTB1 Rohm Semiconductor rs1e350bntb-e.pdf Description: NCH 30V 80A POWER MOSFET: RS1E35
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1E170GNTB RS1E170GNTB Rohm Semiconductor datasheet?p=RS1E170GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 17A 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Produkt ist nicht verfügbar
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SFR01MZPJ752 SFR01MZPJ752 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ752 SFR01MZPJ752 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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112+0.19 EUR
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SDR03EZPD4752 SDR03EZPD4752 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4752 SDR03EZPD4752 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 5000 Stücke:
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48+0.44 EUR
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145+0.14 EUR
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RFN20NS3STL RFN20NS3STL Rohm Semiconductor datasheet?p=RFN20NS3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFN20NS3STL RFN20NS3STL Rohm Semiconductor datasheet?p=RFN20NS3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 784 Stücke:
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SK-BS01-D62Q1577TB SK-BS01-D62Q1577TB Rohm Semiconductor 445b4469-f001-86bb-466f-58b40da118b2?t=1671072151153 Description: ML62Q1577 MCU STARTER KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s), Cable(s)
Core Processor: nX-U16/100
Board Type: Evaluation Platform
Utilized IC / Part: ML62Q1577
Platform: ML62Q1000 MCU Starter Kit
Part Status: Active
auf Bestellung 2 Stücke:
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BZX84B5V6LYT116 BZX84B5V6LYT116 Rohm Semiconductor datasheet?p=BZX84B5V6LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.96%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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BZX84B5V6LYT116 BZX84B5V6LYT116 Rohm Semiconductor datasheet?p=BZX84B5V6LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
auf Bestellung 4770 Stücke:
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BZX84B5V6LYFHT116 BZX84B5V6LYFHT116 Rohm Semiconductor datasheet?p=BZX84B5V6LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.96%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84B5V6LYFHT116 BZX84B5V6LYFHT116 Rohm Semiconductor datasheet?p=BZX84B5V6LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.96%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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UT6J3TCR1 UT6J3TCR1 Rohm Semiconductor datasheet?p=UT6J3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 3A 8DFN
Supplier Device Package: DFN2020-8D
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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ESR01MZPJ432 ESR01MZPJ432 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
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ESR01MZPJ432 ESR01MZPJ432 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
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ESR01MZPF1804 ESR01MZPF1804 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1.8 MOhms
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ESR01MZPF1804 ESR01MZPF1804 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1.8 MOhms
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ESR01MZPF6802 ESR01MZPF6802 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
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ESR01MZPF6802 ESR01MZPF6802 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
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R8008ANJGTL datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJGTL
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R8003KNXC7G datasheet?p=R8003KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KNXC7G
Hersteller: Rohm Semiconductor
Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8002KNXC7G datasheet?p=R8002KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KNXC7G
Hersteller: Rohm Semiconductor
Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8006KNXC7G datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8006KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Produkt ist nicht verfügbar
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R8006KNXC7G datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8006KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 242 Stücke:
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R8002KND3TL1 datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Produkt ist nicht verfügbar
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R8002KND3TL1 datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
auf Bestellung 396 Stücke:
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R8009KNXC7G datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8009KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8009KNXC7G datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8009KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8003KND3TL1 datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Produkt ist nicht verfügbar
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R8003KND3TL1 datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
auf Bestellung 678 Stücke:
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4+5.43 EUR
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RSS070P05HZGTB rss070p05hzgtb-e.pdf
RSS070P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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RSS070P05HZGTB rss070p05hzgtb-e.pdf
RSS070P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4563 Stücke:
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10+2.46 EUR
100+1.96 EUR
500+1.65 EUR
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RGTV80TS65GC11 datasheet?p=RGTV80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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4+5.9 EUR
30+3.2 EUR
120+2.61 EUR
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RGTV80TK65GVC11 datasheet?p=RGTV80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
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4+6.5 EUR
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BD7800FP-E2
BD7800FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5A
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V0LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V0LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 1197 Stücke:
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32+0.67 EUR
52+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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MMBZ27VCLYFHT116 datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VCLYFHT116
Hersteller: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.3 EUR
6000+0.29 EUR
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MMBZ27VCLYFHT116 datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VCLYFHT116
Hersteller: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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24+0.88 EUR
28+0.75 EUR
100+0.52 EUR
500+0.4 EUR
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BUS1DJC3GWZ-E2 datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BUS1DJC3GWZ-E2
Hersteller: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BUS1DJC3GWZ-E2 datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BUS1DJC3GWZ-E2
Hersteller: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SDR10EZPJ360 sdr-e.pdf
SDR10EZPJ360
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
auf Bestellung 10000 Stücke:
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5000+0.054 EUR
10000+0.05 EUR
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SDR10EZPJ360 sdr-e.pdf
SDR10EZPJ360
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
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46+0.46 EUR
53+0.39 EUR
101+0.21 EUR
136+0.15 EUR
500+0.094 EUR
1000+0.064 EUR
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SDR10EZPJ132 sdr-e.pdf
SDR10EZPJ132
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR10EZPJ132 sdr-e.pdf
SDR10EZPJ132
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDR10EZPJ1R0 sdr-e.pdf
SDR10EZPJ1R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.048 EUR
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SDR10EZPJ1R0 sdr-e.pdf
SDR10EZPJ1R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9675 Stücke:
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50+0.42 EUR
61+0.35 EUR
156+0.13 EUR
1000+0.057 EUR
2500+0.052 EUR
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SDR03EZPD8062 sdr-e.pdf
SDR03EZPD8062
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+0.05 EUR
10000+0.048 EUR
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SDR03EZPD8062 sdr-e.pdf
SDR03EZPD8062
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
57+0.37 EUR
145+0.14 EUR
1000+0.061 EUR
2500+0.056 EUR
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SDR03EZPD5112 sdr-e.pdf
SDR03EZPD5112
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
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5000+0.062 EUR
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SDR03EZPD5112 sdr-e.pdf
SDR03EZPD5112
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
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56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
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1000+0.079 EUR
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SDR03EZPD3000 sdr-e.pdf
SDR03EZPD3000
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
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5000+0.062 EUR
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SDR03EZPD3000 sdr-e.pdf
SDR03EZPD3000
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
auf Bestellung 9367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR10EZPF1R60 sdr-e.pdf
SDR10EZPF1R60
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.07 EUR
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SDR10EZPF1R60 sdr-e.pdf
SDR10EZPF1R60
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
auf Bestellung 9570 Stücke:
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35+0.61 EUR
41+0.51 EUR
78+0.27 EUR
105+0.2 EUR
500+0.12 EUR
1000+0.083 EUR
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BD63525AEFV-EVK-001 bd63xxxefv-evk-001_ug-e.pdf
BD63525AEFV-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD63525A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63525A
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
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1+259.37 EUR
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RS1E350GNTB rs1e350gntb-e.pdf
RS1E350GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+2.44 EUR
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RS1E220ATTB1 datasheet?p=RS1E220AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E220ATTB1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1E220ATTB1 datasheet?p=RS1E220AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E220ATTB1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 22A/76A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2166 Stücke:
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4+6.76 EUR
10+4.4 EUR
50+3.4 EUR
100+3.07 EUR
500+2.5 EUR
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RS1E350BNTB1 rs1e350bntb-e.pdf
RS1E350BNTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 80A POWER MOSFET: RS1E35
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1E170GNTB datasheet?p=RS1E170GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E170GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 17A 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Produkt ist nicht verfügbar
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SFR01MZPJ752 sfr-e.pdf
SFR01MZPJ752
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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AnzahlPrivatkunde
10000+0.017 EUR
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SFR01MZPJ752 sfr-e.pdf
SFR01MZPJ752
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
143+0.14 EUR
372+0.056 EUR
1000+0.025 EUR
2500+0.021 EUR
5000+0.019 EUR
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SDR03EZPD4752 sdr-e.pdf
SDR03EZPD4752
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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AnzahlPrivatkunde
5000+0.05 EUR
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SDR03EZPD4752 sdr-e.pdf
SDR03EZPD4752
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
57+0.37 EUR
145+0.14 EUR
1000+0.061 EUR
2500+0.056 EUR
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RFN20NS3STL datasheet?p=RFN20NS3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN20NS3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFN20NS3STL datasheet?p=RFN20NS3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN20NS3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 784 Stücke:
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3+7.33 EUR
10+4.9 EUR
100+3.43 EUR
500+2.81 EUR
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SK-BS01-D62Q1577TB 445b4469-f001-86bb-466f-58b40da118b2?t=1671072151153
SK-BS01-D62Q1577TB
Hersteller: Rohm Semiconductor
Description: ML62Q1577 MCU STARTER KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s), Cable(s)
Core Processor: nX-U16/100
Board Type: Evaluation Platform
Utilized IC / Part: ML62Q1577
Platform: ML62Q1000 MCU Starter Kit
Part Status: Active
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BZX84B5V6LYT116 datasheet?p=BZX84B5V6LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B5V6LYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.96%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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BZX84B5V6LYT116 datasheet?p=BZX84B5V6LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B5V6LYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
auf Bestellung 4770 Stücke:
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33+0.65 EUR
54+0.39 EUR
75+0.29 EUR
100+0.25 EUR
500+0.18 EUR
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BZX84B5V6LYFHT116 datasheet?p=BZX84B5V6LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B5V6LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.96%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.15 EUR
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BZX84B5V6LYFHT116 datasheet?p=BZX84B5V6LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B5V6LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.96%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5590 Stücke:
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29+0.74 EUR
47+0.45 EUR
65+0.32 EUR
100+0.29 EUR
500+0.21 EUR
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UT6J3TCR1 datasheet?p=UT6J3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6J3TCR1
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A 8DFN
Supplier Device Package: DFN2020-8D
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR01MZPJ432 esr-e.pdf
ESR01MZPJ432
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.057 EUR
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ESR01MZPJ432 esr-e.pdf
ESR01MZPJ432
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
47+0.44 EUR
121+0.18 EUR
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2500+0.067 EUR
5000+0.061 EUR
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ESR01MZPF1804 esr-e.pdf
ESR01MZPF1804
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1.8 MOhms
Produkt ist nicht verfügbar
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ESR01MZPF1804 esr-e.pdf
ESR01MZPF1804
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1.8 MOhms
auf Bestellung 9880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
32+0.67 EUR
100+0.26 EUR
1000+0.11 EUR
2500+0.1 EUR
5000+0.092 EUR
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ESR01MZPF6802 esr-e.pdf
ESR01MZPF6802
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
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AnzahlPrivatkunde
10000+0.083 EUR
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ESR01MZPF6802 esr-e.pdf
ESR01MZPF6802
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
32+0.65 EUR
100+0.26 EUR
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5000+0.089 EUR
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