Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103540) > Seite 884 nach 1726
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QH8JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
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QH8JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 2668 Stücke: Lieferzeit 10-14 Tag (e) |
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QH8M22TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 40V 4.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 9928 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8K21TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 45V 4A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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QS8K21TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 45V 4A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8K11TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 4141 Stücke: Lieferzeit 10-14 Tag (e) |
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HS8MA2TCR1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A 9DFNSupplier Device Package: DFN3333-9DC Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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HS8MA2TCR1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A 9DFNSupplier Device Package: DFN3333-9DC Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 687 Stücke: Lieferzeit 10-14 Tag (e) |
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BU45K312G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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BD450M2WFP3-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 200MA SOT223-4FQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 150 µA Protection Features: Over Current, Thermal Shutdown Voltage Dropout (Max): 0.35V @ 100mA PSRR: 65dB (120Hz) Part Status: Active Control Features: Output Control Voltage - Output (Min/Fixed): 5V Supplier Device Package: SOT-223-4F Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 90 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD450M2WFP3-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 200MA SOT223-4FQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 150 µA Protection Features: Over Current, Thermal Shutdown Voltage Dropout (Max): 0.35V @ 100mA PSRR: 65dB (120Hz) Part Status: Active Control Features: Output Control Voltage - Output (Min/Fixed): 5V Supplier Device Package: SOT-223-4F Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 90 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 9719 Stücke: Lieferzeit 10-14 Tag (e) |
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BD450M5FP2-CZE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 500MA TO263-3FPackaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 175 µA Qualification: AEC-Q100 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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BD450M5FP2-CZE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 500MA TO263-3FPackaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 175 µA Qualification: AEC-Q100 |
auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1501TF3SC9 | Rohm Semiconductor |
Description: DIODE STANDARD 350V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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QS5Y2FSTR | Rohm Semiconductor |
Description: PNP+NPN DRIVER TRANSISTOR. DEVIPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Frequency - Transition: 320MHz, 300MHz Supplier Device Package: TSMT5 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS5Y2FSTR | Rohm Semiconductor |
Description: PNP+NPN DRIVER TRANSISTOR. DEVIPackaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Frequency - Transition: 320MHz, 300MHz Supplier Device Package: TSMT5 |
auf Bestellung 9159 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143XU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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DTA143XU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 1870 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143TU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Resistors Included: R1 Only Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active |
Produkt ist nicht verfügbar |
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DTA143TU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
auf Bestellung 1405 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143TCAHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
Produkt ist nicht verfügbar |
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DTA143TCAHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
auf Bestellung 2269 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143TMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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DTA143TMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Resistors Included: R1 Only Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 3534 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | Rohm Semiconductor |
Description: NCH 60V 400MA SMALL SIGNAL MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | Rohm Semiconductor |
Description: NCH 60V 400MA SMALL SIGNAL MOSFEPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
auf Bestellung 64241 Stücke: Lieferzeit 10-14 Tag (e) |
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RW4E065GNTCL1 | Rohm Semiconductor |
Description: NCH 30V 6.5A, HEML1616L7, POWERPackaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V |
Produkt ist nicht verfügbar |
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RW4E065GNTCL1 | Rohm Semiconductor |
Description: NCH 30V 6.5A, HEML1616L7, POWERPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V |
auf Bestellung 2437 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS210KGC17 | Rohm Semiconductor |
Description: DIODE SIC 1.2KV 10A TO220ACFPCurrent - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 |
auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5C035BCTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 3.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V |
auf Bestellung 13120 Stücke: Lieferzeit 10-14 Tag (e) |
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BD18347EFV-EVK-101 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD18347Features: Dimmable Packaging: Bulk Voltage - Output: 40V Voltage - Input: 5.5V ~ 20V Contents: Board(s) Current - Output / Channel: 100mA Utilized IC / Part: BD18347 Supplied Contents: Board(s) Outputs and Type: 4 Non-Isolated Outputs |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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BA5204F | Rohm Semiconductor |
Description: IC AMP AUDIO PWR .035W AB 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -25°C ~ 75°C (TA) Voltage - Supply: 1.8V Max Output Power x Channels @ Load: 35mW x 2 @ 32Ohm Supplier Device Package: 16-SOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BD6964F-E2 | Rohm Semiconductor |
Description: PWM SPEED CONTROLLABLE SIGNAL-PHPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 3.3V ~ 15V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 3.3V ~ 14V Supplier Device Package: 8-SOP Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD6964F-E2 | Rohm Semiconductor |
Description: PWM SPEED CONTROLLABLE SIGNAL-PHPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 3.3V ~ 15V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 3.3V ~ 14V Supplier Device Package: 8-SOP Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
auf Bestellung 2385 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84B13VLYT116 | Rohm Semiconductor |
Description: 250MW, 13V, SOT-23, ZENER DIODETolerance: ±2.31% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23 Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84B13VLYT116 | Rohm Semiconductor |
Description: 250MW, 13V, SOT-23, ZENER DIODETolerance: ±2.31% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23 Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 5805 Stücke: Lieferzeit 10-14 Tag (e) |
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BU4921G-TR | Rohm Semiconductor |
Description: IC VOLT DETECTOR STD 5-SSOPPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 2.1V Supplier Device Package: 5-SSOP DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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RB508FM-40SFHT106 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 80MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA Current - Reverse Leakage @ Vr: 35 nA @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RB508FM-40SFHT106 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 80MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA Current - Reverse Leakage @ Vr: 35 nA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3U040CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 4A TO252Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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RD3U040CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 4A TO252Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA |
auf Bestellung 874 Stücke: Lieferzeit 10-14 Tag (e) |
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BD63572MUV-E2 | Rohm Semiconductor |
Description: DUAL H-BRIDGE DRIVER HIGH-SPEEDPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 2.5V ~ 3.6V Applications: Appliance Technology: DMOS Voltage - Load: 2V ~ 9V Supplier Device Package: VQFN20PV3535 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BD63572MUV-E2 | Rohm Semiconductor |
Description: DUAL H-BRIDGE DRIVER HIGH-SPEEDPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 2.5V ~ 3.6V Applications: Appliance Technology: DMOS Voltage - Load: 2V ~ 9V Supplier Device Package: VQFN20PV3535 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 4332 Stücke: Lieferzeit 10-14 Tag (e) |
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BD61246EFV-E2 | Rohm Semiconductor |
Description: MULTIFUNCTION SINGLE-PHASE FULL-Packaging: Tape & Reel (TR) Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 4V ~ 16V Applications: General Purpose Technology: DMOS Voltage - Load: 18V Supplier Device Package: HTSSOP-B16 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BD61246EFV-E2 | Rohm Semiconductor |
Description: MULTIFUNCTION SINGLE-PHASE FULL-Packaging: Cut Tape (CT) Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 4V ~ 16V Applications: General Purpose Technology: DMOS Voltage - Load: 18V Supplier Device Package: HTSSOP-B16 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847CHZGT116 | Rohm Semiconductor |
Description: TRANS NPN 45V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
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BC847CHZGT116 | Rohm Semiconductor |
Description: TRANS NPN 45V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
auf Bestellung 2704 Stücke: Lieferzeit 10-14 Tag (e) |
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TFZGTR6.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 500MW TUMD2Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SCS215AGC17 | Rohm Semiconductor |
Description: DIODE SIC 650V 15A TO220ACFPCurrent - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 620 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS215AEGC11 | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 15A TO247Current - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS215KGC17 | Rohm Semiconductor |
Description: DIODE SIC 1.2KV 15A TO220ACFPCurrent - Reverse Leakage @ Vr: 300 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 790pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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BD3925HFP-CTR | Rohm Semiconductor |
Description: IC REG LIN POS ADJ 500MA HRP-5 Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): Tracking Control Features: Enable PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.48V @ 200mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD3925HFP-CTR | Rohm Semiconductor |
Description: IC REG LIN POS ADJ 500MA HRP-5 Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): Tracking Control Features: Enable PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.48V @ 200mA Protection Features: Over Current, Over Temperature |
auf Bestellung 1974 Stücke: Lieferzeit 10-14 Tag (e) |
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BD39012EFV-CE2 | Rohm Semiconductor |
Description: IC REG 24HTSSOP-BPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4V ~ 36V Frequency - Switching: 200kHz ~ 600kHz Topology: Step-Down (Buck) (1), Linear (LDO) (1) Supplier Device Package: 24-HTSSOP-B Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A Voltage/Current - Output 2: Fixed, 5V, 400mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
Produkt ist nicht verfügbar |
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BD39012EFV-CE2 | Rohm Semiconductor |
Description: IC REG 24HTSSOP-BPackaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4V ~ 36V Frequency - Switching: 200kHz ~ 600kHz Topology: Step-Down (Buck) (1), Linear (LDO) (1) Supplier Device Package: 24-HTSSOP-B Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A Voltage/Current - Output 2: Fixed, 5V, 400mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
Produkt ist nicht verfügbar |
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BD39031MUF-CE2 | Rohm Semiconductor |
Description: POWER MANAGEMENT IC FOR ADAS APPPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4V ~ 28V Applications: Camera Current - Supply: 5mA Supplier Device Package: VQFN40FV6060 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BD39031MUF-CE2 | Rohm Semiconductor |
Description: POWER MANAGEMENT IC FOR ADAS APPPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4V ~ 28V Applications: Camera Current - Supply: 5mA Supplier Device Package: VQFN40FV6060 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A LPTSOperating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 630µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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R6520ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 630µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 630µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| QH8JB5TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QH8JB5TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2668 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.89 EUR |
| QH8M22TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 9928 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| QS8K21TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| QS8K21TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 12+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| QS8K11TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 4141 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| HS8MA2TCR1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS8MA2TCR1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 5A 9DFN
Supplier Device Package: DFN3333-9DC
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.8 EUR |
| BU45K312G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 20+ | 0.9 EUR |
| 25+ | 0.84 EUR |
| BD450M2WFP3-CE2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 1.33 EUR |
| BD450M2WFP3-CE2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 200MA SOT223-4F
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 150 µA
Protection Features: Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Output Control
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-223-4F
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 9719 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.85 EUR |
| 25+ | 2.69 EUR |
| 100+ | 2.29 EUR |
| 250+ | 2.15 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.56 EUR |
| BD450M5FP2-CZE2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 1.48 EUR |
| BD450M5FP2-CZE2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 10+ | 2.02 EUR |
| 25+ | 1.84 EUR |
| 100+ | 1.64 EUR |
| 250+ | 1.54 EUR |
| RF1501TF3SC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.93 EUR |
| 50+ | 2.45 EUR |
| 100+ | 2.21 EUR |
| QS5Y2FSTR |
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Hersteller: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| QS5Y2FSTR |
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Hersteller: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 9159 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.38 EUR |
| DTA143XU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143XU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 102+ | 0.17 EUR |
| 164+ | 0.11 EUR |
| 500+ | 0.078 EUR |
| 1000+ | 0.069 EUR |
| DTA143TU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Resistors Included: R1 Only
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Resistors Included: R1 Only
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
auf Bestellung 1405 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 102+ | 0.17 EUR |
| 164+ | 0.11 EUR |
| 500+ | 0.078 EUR |
| 1000+ | 0.069 EUR |
| DTA143TCAHZGT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TCAHZGT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 2269 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 107+ | 0.17 EUR |
| 172+ | 0.1 EUR |
| 500+ | 0.075 EUR |
| 1000+ | 0.065 EUR |
| DTA143TMFHAT2L |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TMFHAT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Resistors Included: R1 Only
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Resistors Included: R1 Only
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3534 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 82+ | 0.22 EUR |
| 132+ | 0.13 EUR |
| 500+ | 0.098 EUR |
| 1000+ | 0.086 EUR |
| 2000+ | 0.076 EUR |
| BSS138BKT116 |
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Hersteller: Rohm Semiconductor
Description: NCH 60V 400MA SMALL SIGNAL MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: NCH 60V 400MA SMALL SIGNAL MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.11 EUR |
| 15000+ | 0.1 EUR |
| 21000+ | 0.096 EUR |
| 30000+ | 0.092 EUR |
| BSS138BKT116 |
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Hersteller: Rohm Semiconductor
Description: NCH 60V 400MA SMALL SIGNAL MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: NCH 60V 400MA SMALL SIGNAL MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
auf Bestellung 64241 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 49+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| RW4E065GNTCL1 |
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Hersteller: Rohm Semiconductor
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RW4E065GNTCL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
auf Bestellung 2437 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.71 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| SCS210KGC17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIC 1.2KV 10A TO220ACFP
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Description: DIODE SIC 1.2KV 10A TO220ACFP
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.29 EUR |
| 50+ | 7.88 EUR |
| 100+ | 7.26 EUR |
| RQ5C035BCTCL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
auf Bestellung 13120 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| BD18347EFV-EVK-101 |
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Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD18347
Features: Dimmable
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 20V
Contents: Board(s)
Current - Output / Channel: 100mA
Utilized IC / Part: BD18347
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Description: EVAL BOARD FOR BD18347
Features: Dimmable
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 20V
Contents: Board(s)
Current - Output / Channel: 100mA
Utilized IC / Part: BD18347
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 431.75 EUR |
| BA5204F |
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Hersteller: Rohm Semiconductor
Description: IC AMP AUDIO PWR .035W AB 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 1.8V
Max Output Power x Channels @ Load: 35mW x 2 @ 32Ohm
Supplier Device Package: 16-SOP
Part Status: Obsolete
Description: IC AMP AUDIO PWR .035W AB 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 1.8V
Max Output Power x Channels @ Load: 35mW x 2 @ 32Ohm
Supplier Device Package: 16-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD6964F-E2 |
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Hersteller: Rohm Semiconductor
Description: PWM SPEED CONTROLLABLE SIGNAL-PH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: PWM SPEED CONTROLLABLE SIGNAL-PH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD6964F-E2 |
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Hersteller: Rohm Semiconductor
Description: PWM SPEED CONTROLLABLE SIGNAL-PH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: PWM SPEED CONTROLLABLE SIGNAL-PH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 17+ | 1.09 EUR |
| 25+ | 0.98 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.81 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.75 EUR |
| BZX84B13VLYT116 |
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Hersteller: Rohm Semiconductor
Description: 250MW, 13V, SOT-23, ZENER DIODE
Tolerance: ±2.31%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: 250MW, 13V, SOT-23, ZENER DIODE
Tolerance: ±2.31%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.086 EUR |
| BZX84B13VLYT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: 250MW, 13V, SOT-23, ZENER DIODE
Tolerance: ±2.31%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: 250MW, 13V, SOT-23, ZENER DIODE
Tolerance: ±2.31%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 5805 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 65+ | 0.27 EUR |
| 137+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BU4921G-TR |
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Hersteller: Rohm Semiconductor
Description: IC VOLT DETECTOR STD 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.1V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
Description: IC VOLT DETECTOR STD 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.1V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB508FM-40SFHT106 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB508FM-40SFHT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 2083 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| RD3U040CNTL1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3U040CNTL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A TO252
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Description: MOSFET N-CH 250V 4A TO252
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
auf Bestellung 874 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.2 EUR |
| BD63572MUV-E2 |
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Hersteller: Rohm Semiconductor
Description: DUAL H-BRIDGE DRIVER HIGH-SPEED
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: Appliance
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN20PV3535
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: DUAL H-BRIDGE DRIVER HIGH-SPEED
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: Appliance
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN20PV3535
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.33 EUR |
| BD63572MUV-E2 |
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Hersteller: Rohm Semiconductor
Description: DUAL H-BRIDGE DRIVER HIGH-SPEED
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: Appliance
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN20PV3535
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: DUAL H-BRIDGE DRIVER HIGH-SPEED
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: Appliance
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN20PV3535
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4332 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.54 EUR |
| 25+ | 2.31 EUR |
| 100+ | 2.07 EUR |
| 250+ | 1.95 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.83 EUR |
| BD61246EFV-E2 |
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Hersteller: Rohm Semiconductor
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Tape & Reel (TR)
Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4V ~ 16V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: HTSSOP-B16
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Tape & Reel (TR)
Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4V ~ 16V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: HTSSOP-B16
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.59 EUR |
| BD61246EFV-E2 |
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Hersteller: Rohm Semiconductor
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Cut Tape (CT)
Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4V ~ 16V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: HTSSOP-B16
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Cut Tape (CT)
Package / Case: 16-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4V ~ 16V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: HTSSOP-B16
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.35 EUR |
| 10+ | 3.41 EUR |
| 25+ | 2.9 EUR |
| 100+ | 2.32 EUR |
| 250+ | 2.04 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.72 EUR |
| BC847CHZGT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847CHZGT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 60+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| SCS215AGC17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 15A TO220ACFP
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIC 650V 15A TO220ACFP
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 620 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.76 EUR |
| 10+ | 5.94 EUR |
| 100+ | 5.25 EUR |
| SCS215AEGC11 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARBIDE 650V 15A TO247
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.52 EUR |
| 30+ | 8.38 EUR |
| SCS215KGC17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIC 1.2KV 15A TO220ACFP
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 790pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIC 1.2KV 15A TO220ACFP
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 790pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.26 EUR |
| 10+ | 11.31 EUR |
| 100+ | 9.92 EUR |
| BD3925HFP-CTR |
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 500MA HRP-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.48V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ 500MA HRP-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.48V @ 200mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD3925HFP-CTR |
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 500MA HRP-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.48V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ 500MA HRP-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.48V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 1974 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.09 EUR |
| 10+ | 4.61 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.83 EUR |
| 250+ | 3.63 EUR |
| 500+ | 3.52 EUR |
| 1000+ | 3.42 EUR |
| BD39012EFV-CE2 |
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Hersteller: Rohm Semiconductor
Description: IC REG 24HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 36V
Frequency - Switching: 200kHz ~ 600kHz
Topology: Step-Down (Buck) (1), Linear (LDO) (1)
Supplier Device Package: 24-HTSSOP-B
Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A
Voltage/Current - Output 2: Fixed, 5V, 400mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG 24HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 36V
Frequency - Switching: 200kHz ~ 600kHz
Topology: Step-Down (Buck) (1), Linear (LDO) (1)
Supplier Device Package: 24-HTSSOP-B
Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A
Voltage/Current - Output 2: Fixed, 5V, 400mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD39012EFV-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC REG 24HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 36V
Frequency - Switching: 200kHz ~ 600kHz
Topology: Step-Down (Buck) (1), Linear (LDO) (1)
Supplier Device Package: 24-HTSSOP-B
Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A
Voltage/Current - Output 2: Fixed, 5V, 400mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG 24HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 36V
Frequency - Switching: 200kHz ~ 600kHz
Topology: Step-Down (Buck) (1), Linear (LDO) (1)
Supplier Device Package: 24-HTSSOP-B
Voltage/Current - Output 1: Adjustable, 0.8V ~ 36V, 1A
Voltage/Current - Output 2: Fixed, 5V, 400mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD39031MUF-CE2 |
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Hersteller: Rohm Semiconductor
Description: POWER MANAGEMENT IC FOR ADAS APP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 28V
Applications: Camera
Current - Supply: 5mA
Supplier Device Package: VQFN40FV6060
Grade: Automotive
Qualification: AEC-Q100
Description: POWER MANAGEMENT IC FOR ADAS APP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 28V
Applications: Camera
Current - Supply: 5mA
Supplier Device Package: VQFN40FV6060
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD39031MUF-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: POWER MANAGEMENT IC FOR ADAS APP
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 28V
Applications: Camera
Current - Supply: 5mA
Supplier Device Package: VQFN40FV6060
Grade: Automotive
Qualification: AEC-Q100
Description: POWER MANAGEMENT IC FOR ADAS APP
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4V ~ 28V
Applications: Camera
Current - Supply: 5mA
Supplier Device Package: VQFN40FV6060
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.17 EUR |
| 10+ | 10.23 EUR |
| 25+ | 8.94 EUR |
| 100+ | 7.49 EUR |
| 250+ | 6.78 EUR |
| 500+ | 6.71 EUR |
| R6520ENJTL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 650V 20A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R6520ENJTL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.96 EUR |
| 10+ | 8.37 EUR |
| 100+ | 6.77 EUR |
| R6520KNJTL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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