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SDR03EZPD2101 SDR03EZPD2101 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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1SS400FJTE61 1SS400FJTE61 Rohm Semiconductor 1ss400.pdf Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FHTE61 1SS400FHTE61 Rohm Semiconductor datasheet?p=1SS400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FSTE61 1SS400FSTE61 Rohm Semiconductor 1ss400.pdf Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400GTE61 1SS400GTE61 Rohm Semiconductor 1ss400g.pdf Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FTE61 1SS400FTE61 Rohm Semiconductor 1ss400.pdf Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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R6035VNXC7G R6035VNXC7G Rohm Semiconductor datasheet?p=R6035VNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 17A TO-220FM, PRESTOMOS WIT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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BD34301EKV-EVK-001 BD34301EKV-EVK-001 Rohm Semiconductor bd34301ekv_evk_001_ug-e.pdf Description: EVAL BOARD FOR BD34301
Packaging: Bulk
Function: Audio/Stereo DAC
Type: Audio
Utilized IC / Part: BD34301
Supplied Contents: Board(s)
Contents: Board(s)
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BD34301EKV-EVK-003 BD34301EKV-EVK-003 Rohm Semiconductor bd34301ekv_evk_003_ug-e.pdf Description: EVAL BOARD FOR BD34301
Packaging: Bulk
Function: Audio/Stereo DAC
Type: Audio
Contents: Board(s)
Utilized IC / Part: BD34301
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BAW156HYFHT116 BAW156HYFHT116 Rohm Semiconductor datasheet?p=BAW156HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
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BAW156HYFHT116 BAW156HYFHT116 Rohm Semiconductor datasheet?p=BAW156HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
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BAW156HYT116 BAW156HYT116 Rohm Semiconductor datasheet?p=BAW156HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BAW156HYT116 BAW156HYT116 Rohm Semiconductor datasheet?p=BAW156HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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R6509ENXC7G R6509ENXC7G Rohm Semiconductor datasheet?p=R6509ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 9A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6524ENXC7G R6524ENXC7G Rohm Semiconductor datasheet?p=R6524ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 24A TO-220FM, LOW-NOISE POW
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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R6024ENXC7G R6024ENXC7G Rohm Semiconductor datasheet?p=R6024ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 24A TO-220FM, LOW-NOISE POW
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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RBQ30NS100ATL RBQ30NS100ATL Rohm Semiconductor datasheet?p=RBQ30NS100A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A TO263S
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-263S
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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RBQ30NS100ATL RBQ30NS100ATL Rohm Semiconductor datasheet?p=RBQ30NS100A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A TO263S
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-263S
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RB160QS-40T18R RB160QS-40T18R Rohm Semiconductor datasheet?p=RB160QS-40&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 1.5A SMD1006
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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RB160QS-40T18R RB160QS-40T18R Rohm Semiconductor datasheet?p=RB160QS-40&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 1.5A SMD1006
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
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RD3L140SPFRATL RD3L140SPFRATL Rohm Semiconductor datasheet?p=RD3L140SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 60V 14A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L140SPFRATL RD3L140SPFRATL Rohm Semiconductor datasheet?p=RD3L140SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 60V 14A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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RD3G01BATTL1 RD3G01BATTL1 Rohm Semiconductor datasheet?p=RD3G01BAT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3G01BATTL1 RD3G01BATTL1 Rohm Semiconductor datasheet?p=RD3G01BAT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BRCH064GWZ-3E2 BRCH064GWZ-3E2 Rohm Semiconductor datasheet?p=BRCH064GWZ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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BRCH064GWZ-3E2 BRCH064GWZ-3E2 Rohm Semiconductor datasheet?p=BRCH064GWZ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Write Cycle Time - Word, Page: 5ms
Part Status: Active
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BM2P129TF-E2 BM2P129TF-E2 Rohm Semiconductor datasheet?p=BM2P129TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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BM2P129TF-E2 BM2P129TF-E2 Rohm Semiconductor datasheet?p=BM2P129TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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250+1.78 EUR
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1000+1.67 EUR
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BM2P129TF-EVK-001 BM2P129TF-EVK-001 Rohm Semiconductor bm2p129tf-evk-001_ug-e.pdf Description: EVAL BOARD FOR BM2P129
Power - Output: 2W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Utilized IC / Part: BM2P129
Regulator Topology: Buck
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 167mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
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TFZGTR5.6B TFZGTR5.6B Rohm Semiconductor datasheet?p=TFZ5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 500MW TUMD2
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Power - Max: 500 mW
Supplier Device Package: TUMD2
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SFR01MZPF1332 SFR01MZPF1332 Rohm Semiconductor sfr-e.pdf Description: RES SMD 13.3K OHM 1% 1/16W 0402
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BA00CC0WCP-V5E2 BA00CC0WCP-V5E2 Rohm Semiconductor datasheet?p=BA00CC0WCP-V5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN POS ADJ 1A TO220CP-V5
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.225V
Voltage - Output (Max): 24.5V
Supplier Device Package: TO220CP-V5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tape & Reel (TR)
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BU64562GWZ-E2 BU64562GWZ-E2 Rohm Semiconductor datasheet?p=BU64562GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
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BU64562GWZ-E2 BU64562GWZ-E2 Rohm Semiconductor datasheet?p=BU64562GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
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BD2310G-TR BD2310G-TR Rohm Semiconductor datasheet?p=BD2310G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR LOW-SIDE 5SSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
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BD2310G-TR BD2310G-TR Rohm Semiconductor datasheet?p=BD2310G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR LOW-SIDE 5SSOP
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
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BD2320EFJ-LAE2 BD2320EFJ-LAE2 Rohm Semiconductor datasheet?p=BD2320EFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD2320EFJ-LAE2 BD2320EFJ-LAE2 Rohm Semiconductor datasheet?p=BD2320EFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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SDR03EZPF3901 SDR03EZPF3901 Rohm Semiconductor sdr-e.pdf Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
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SDR03EZPF3901 SDR03EZPF3901 Rohm Semiconductor sdr-e.pdf Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
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BM2P109TF-E2 BM2P109TF-E2 Rohm Semiconductor bm2p109tf-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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BM2P109TF-E2 BM2P109TF-E2 Rohm Semiconductor bm2p109tf-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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BD900N1G-CTR BD900N1G-CTR Rohm Semiconductor datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
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BD900N1G-CTR BD900N1G-CTR Rohm Semiconductor datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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SFR18EZPJ470 SFR18EZPJ470 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ470 SFR18EZPJ470 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ131 SFR18EZPJ131 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPJ131 SFR18EZPJ131 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
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SFR18EZPJ3R3 SFR18EZPJ3R3 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ3R3 SFR18EZPJ3R3 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPF1200 SFR18EZPF1200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPF1200 SFR18EZPF1200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ331 SFR18EZPJ331 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
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SFR18EZPJ331 SFR18EZPJ331 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
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BR24T32FVJ-WE2 BR24T32FVJ-WE2 Rohm Semiconductor datasheet?p=BR24T32FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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BR24T32FVT-WE2 BR24T32FVT-WE2 Rohm Semiconductor datasheet?p=BR24T32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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RW4E045AJTCL1 RW4E045AJTCL1 Rohm Semiconductor datasheet?p=RW4E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
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RW4E045ATTCL1 RW4E045ATTCL1 Rohm Semiconductor datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RW4E045ATTCL1 RW4E045ATTCL1 Rohm Semiconductor datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
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R8008ANJGTL R8008ANJGTL Rohm Semiconductor datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SDR03EZPD2101 sdr-e.pdf
SDR03EZPD2101
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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1SS400FJTE61 1ss400.pdf
1SS400FJTE61
Hersteller: Rohm Semiconductor
Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FHTE61 datasheet?p=1SS400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
1SS400FHTE61
Hersteller: Rohm Semiconductor
Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FSTE61 1ss400.pdf
1SS400FSTE61
Hersteller: Rohm Semiconductor
Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400GTE61 1ss400g.pdf
1SS400GTE61
Hersteller: Rohm Semiconductor
Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
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1SS400FTE61 1ss400.pdf
1SS400FTE61
Hersteller: Rohm Semiconductor
Description: DIODE GENERAL PURPOSE SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6035VNXC7G datasheet?p=R6035VNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035VNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 17A TO-220FM, PRESTOMOS WIT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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BD34301EKV-EVK-001 bd34301ekv_evk_001_ug-e.pdf
BD34301EKV-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD34301
Packaging: Bulk
Function: Audio/Stereo DAC
Type: Audio
Utilized IC / Part: BD34301
Supplied Contents: Board(s)
Contents: Board(s)
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BD34301EKV-EVK-003 bd34301ekv_evk_003_ug-e.pdf
BD34301EKV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD34301
Packaging: Bulk
Function: Audio/Stereo DAC
Type: Audio
Contents: Board(s)
Utilized IC / Part: BD34301
Produkt ist nicht verfügbar
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BAW156HYFHT116 datasheet?p=BAW156HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAW156HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAW156HYFHT116 datasheet?p=BAW156HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAW156HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
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BAW156HYT116 datasheet?p=BAW156HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAW156HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BAW156HYT116 datasheet?p=BAW156HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAW156HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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33+0.65 EUR
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R6509ENXC7G datasheet?p=R6509ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 971 Stücke:
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6+3.8 EUR
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R6524ENXC7G datasheet?p=R6524ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 24A TO-220FM, LOW-NOISE POW
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 990 Stücke:
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4+6.58 EUR
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R6024ENXC7G datasheet?p=R6024ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 24A TO-220FM, LOW-NOISE POW
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 965 Stücke:
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RBQ30NS100ATL datasheet?p=RBQ30NS100A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30NS100ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A TO263S
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-263S
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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RBQ30NS100ATL datasheet?p=RBQ30NS100A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30NS100ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A TO263S
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-263S
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RB160QS-40T18R datasheet?p=RB160QS-40&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB160QS-40T18R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1.5A SMD1006
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB160QS-40T18R datasheet?p=RB160QS-40&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB160QS-40T18R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1.5A SMD1006
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
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RD3L140SPFRATL datasheet?p=RD3L140SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L140SPFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L140SPFRATL datasheet?p=RD3L140SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L140SPFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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8+2.98 EUR
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RD3G01BATTL1 datasheet?p=RD3G01BAT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G01BATTL1
Hersteller: Rohm Semiconductor
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.9 EUR
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RD3G01BATTL1 datasheet?p=RD3G01BAT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G01BATTL1
Hersteller: Rohm Semiconductor
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BRCH064GWZ-3E2 datasheet?p=BRCH064GWZ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BRCH064GWZ-3E2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BRCH064GWZ-3E2 datasheet?p=BRCH064GWZ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BRCH064GWZ-3E2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Write Cycle Time - Word, Page: 5ms
Part Status: Active
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BM2P129TF-E2 datasheet?p=BM2P129TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P129TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BM2P129TF-E2 datasheet?p=BM2P129TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P129TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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7+3.19 EUR
10+2.33 EUR
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BM2P129TF-EVK-001 bm2p129tf-evk-001_ug-e.pdf
BM2P129TF-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P129
Power - Output: 2W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Utilized IC / Part: BM2P129
Regulator Topology: Buck
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 167mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
Produkt ist nicht verfügbar
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TFZGTR5.6B datasheet?p=TFZ5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZGTR5.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 500MW TUMD2
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Power - Max: 500 mW
Supplier Device Package: TUMD2
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SFR01MZPF1332 sfr-e.pdf
SFR01MZPF1332
Hersteller: Rohm Semiconductor
Description: RES SMD 13.3K OHM 1% 1/16W 0402
Produkt ist nicht verfügbar
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BA00CC0WCP-V5E2 datasheet?p=BA00CC0WCP-V5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA00CC0WCP-V5E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 1A TO220CP-V5
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.225V
Voltage - Output (Max): 24.5V
Supplier Device Package: TO220CP-V5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tape & Reel (TR)
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BU64562GWZ-E2 datasheet?p=BU64562GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU64562GWZ-E2
Hersteller: Rohm Semiconductor
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
Produkt ist nicht verfügbar
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BU64562GWZ-E2 datasheet?p=BU64562GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU64562GWZ-E2
Hersteller: Rohm Semiconductor
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
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4+6.03 EUR
10+4.52 EUR
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BD2310G-TR datasheet?p=BD2310G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2310G-TR
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 5SSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Produkt ist nicht verfügbar
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BD2310G-TR datasheet?p=BD2310G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2310G-TR
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 5SSOP
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
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BD2320EFJ-LAE2 datasheet?p=BD2320EFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2320EFJ-LAE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD2320EFJ-LAE2 datasheet?p=BD2320EFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2320EFJ-LAE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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SDR03EZPF3901 sdr-e.pdf
SDR03EZPF3901
Hersteller: Rohm Semiconductor
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF3901 sdr-e.pdf
SDR03EZPF3901
Hersteller: Rohm Semiconductor
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
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BM2P109TF-E2 bm2p109tf-e.pdf
BM2P109TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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2500+1.8 EUR
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BM2P109TF-E2 bm2p109tf-e.pdf
BM2P109TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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BD900N1G-CTR datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD900N1G-CTR
Hersteller: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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BD900N1G-CTR datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD900N1G-CTR
Hersteller: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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SFR18EZPJ470 sfr-e.pdf
SFR18EZPJ470
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
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5000+0.037 EUR
10000+0.035 EUR
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SFR18EZPJ470 sfr-e.pdf
SFR18EZPJ470
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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67+0.31 EUR
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SFR18EZPJ131 sfr-e.pdf
SFR18EZPJ131
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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5000+0.042 EUR
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SFR18EZPJ131 sfr-e.pdf
SFR18EZPJ131
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
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70+0.3 EUR
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SFR18EZPJ3R3 sfr-e.pdf
SFR18EZPJ3R3
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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5000+0.037 EUR
10000+0.035 EUR
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SFR18EZPJ3R3 sfr-e.pdf
SFR18EZPJ3R3
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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67+0.31 EUR
77+0.27 EUR
198+0.11 EUR
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SFR18EZPF1200 sfr-e.pdf
SFR18EZPF1200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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5000+0.057 EUR
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SFR18EZPF1200 sfr-e.pdf
SFR18EZPF1200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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44+0.48 EUR
50+0.42 EUR
128+0.17 EUR
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SFR18EZPJ331 sfr-e.pdf
SFR18EZPJ331
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
auf Bestellung 5000 Stücke:
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5000+0.043 EUR
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SFR18EZPJ331 sfr-e.pdf
SFR18EZPJ331
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
auf Bestellung 7932 Stücke:
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AnzahlPrivatkunde
56+0.38 EUR
66+0.32 EUR
169+0.12 EUR
1000+0.052 EUR
2500+0.048 EUR
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BR24T32FVJ-WE2 datasheet?p=BR24T32FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T32FVJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24T32FVT-WE2 datasheet?p=BR24T32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T32FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RW4E045AJTCL1 datasheet?p=RW4E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045AJTCL1
Hersteller: Rohm Semiconductor
Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
Produkt ist nicht verfügbar
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RW4E045ATTCL1 datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045ATTCL1
Hersteller: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RW4E045ATTCL1 datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045ATTCL1
Hersteller: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
auf Bestellung 2940 Stücke:
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9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.76 EUR
1000+0.69 EUR
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R8008ANJGTL datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJGTL
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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