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R6504ENXC7G R6504ENXC7G Rohm Semiconductor datasheet?p=R6504ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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RD3U080CNTL1 RD3U080CNTL1 Rohm Semiconductor datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3U080CNTL1 RD3U080CNTL1 Rohm Semiconductor datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RD3L150SNTL1 RD3L150SNTL1 Rohm Semiconductor datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L150SNTL1 RD3L150SNTL1 Rohm Semiconductor datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SML-H12P8TT86C SML-H12P8TT86C Rohm Semiconductor datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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SML-H12P8TT86C SML-H12P8TT86C Rohm Semiconductor datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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SMLMN2BCTT86C SMLMN2BCTT86C Rohm Semiconductor datasheet?p=SMLMN2BCT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
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LM2901F-E2 LM2901F-E2 Rohm Semiconductor datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
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LM2901F-E2 LM2901F-E2 Rohm Semiconductor datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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R6002ENHTB1 R6002ENHTB1 Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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R6002ENHTB1 R6002ENHTB1 Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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ML620Q156-607TBZWARL Rohm Semiconductor Description: IC
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DTA144WCAT116 DTA144WCAT116 Rohm Semiconductor datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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LM2902FV-E2 LM2902FV-E2 Rohm Semiconductor datasheet?p=LM2902FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM2902FV-E2 LM2902FV-E2 Rohm Semiconductor datasheet?p=LM2902FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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ML610Q174-480GAZWAX Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC
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BD91N01NUX-E2 BD91N01NUX-E2 Rohm Semiconductor datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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BD91N01NUX-E2 BD91N01NUX-E2 Rohm Semiconductor datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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RFUH20TB3SNZC9 RFUH20TB3SNZC9 Rohm Semiconductor datasheet?p=RFUH20TB3SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
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RFN5TF6SC9 RFN5TF6SC9 Rohm Semiconductor datasheet?p=RFN5TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RQ6E060ATTCR RQ6E060ATTCR Rohm Semiconductor datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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RQ6G050ATTCR RQ6G050ATTCR Rohm Semiconductor datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
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RQ6G050ATTCR RQ6G050ATTCR Rohm Semiconductor datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 16657 Stücke:
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100+1.07 EUR
500+0.83 EUR
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UT6JB5TCR UT6JB5TCR Rohm Semiconductor datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6JB5TCR UT6JB5TCR Rohm Semiconductor datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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RQ6E030ATTCR RQ6E030ATTCR Rohm Semiconductor datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RAQ045P01TCR RAQ045P01TCR Rohm Semiconductor datasheet?p=RAQ045P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RF4L070BGTCR RF4L070BGTCR Rohm Semiconductor datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4L070BGTCR RF4L070BGTCR Rohm Semiconductor datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RF4G100BGTCR RF4G100BGTCR Rohm Semiconductor datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4G100BGTCR RF4G100BGTCR Rohm Semiconductor datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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RQ7G080BGTCR RQ7G080BGTCR Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RQ7G080BGTCR RQ7G080BGTCR Rohm Semiconductor datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3100 Stücke:
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BS2100F-E2 BS2100F-E2 Rohm Semiconductor Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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ML610Q178-022GAZ0AAL Rohm Semiconductor ML610Q178.pdf Description: IC
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ML610Q178-022GAZ0AX Rohm Semiconductor ML610Q178.pdf Description: IC
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SFR01MZPJ332 SFR01MZPJ332 Rohm Semiconductor sfr-e.pdf Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
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BM2P134Q-Z BM2P134Q-Z Rohm Semiconductor bm2p13xqx-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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BM2P121X-Z BM2P121X-Z Rohm Semiconductor bm2pxx1x-z-e.pdf Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
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BM2SC124FP2-LBZE2 BM2SC124FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
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BM2SC124FP2-LBZE2 BM2SC124FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
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BM2SC121FP2-LBZE2 BM2SC121FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
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BM2SC121FP2-LBZE2 BM2SC121FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
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RGTV80TK65DGVC11 RGTV80TK65DGVC11 Rohm Semiconductor datasheet?p=RGTV80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
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MCR03EZPFX8203 MCR03EZPFX8203 Rohm Semiconductor mcr-e.pdf Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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MCR03EZPFX8202 MCR03EZPFX8202 Rohm Semiconductor mcr-e.pdf Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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UMT1NFHATN UMT1NFHATN Rohm Semiconductor datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BD57021MWV-E2 BD57021MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Produkt ist nicht verfügbar
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
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RBR30NS60ATL RBR30NS60ATL Rohm Semiconductor datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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R6504ENXC7G datasheet?p=R6504ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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RD3U080CNTL1 datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080CNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RD3U080CNTL1 datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080CNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RD3L150SNTL1 datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L150SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L150SNTL1 datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L150SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SML-H12P8TT86C datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12P8TT86C
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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3000+0.18 EUR
6000+0.17 EUR
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SML-H12P8TT86C datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12P8TT86C
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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SMLMN2BCTT86C datasheet?p=SMLMN2BCT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLMN2BCTT86C
Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
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LM2901F-E2 datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901F-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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LM2901F-E2 datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901F-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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R6002ENHTB1 datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENHTB1
Hersteller: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
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R6002ENHTB1 datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENHTB1
Hersteller: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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ML620Q156-607TBZWARL
Hersteller: Rohm Semiconductor
Description: IC
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DTA144WCAT116 datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA144WCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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LM2902FV-E2 datasheet?p=LM2902FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2902FV-E2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM2902FV-E2 datasheet?p=LM2902FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2902FV-E2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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ML610Q174-480GAZWAX ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC
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BD91N01NUX-E2 datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD91N01NUX-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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BD91N01NUX-E2 datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD91N01NUX-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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RFUH20TB3SNZC9 datasheet?p=RFUH20TB3SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH20TB3SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
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RFN5TF6SC9 datasheet?p=RFN5TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN5TF6SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RQ6E060ATTCR datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E060ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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RQ6G050ATTCR datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6G050ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
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RQ6G050ATTCR datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6G050ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 16657 Stücke:
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UT6JB5TCR datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6JB5TCR datasheet?p=UT6JB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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RQ6E030ATTCR datasheet?p=RQ6E030AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E030ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RAQ045P01TCR datasheet?p=RAQ045P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RAQ045P01TCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 7336 Stücke:
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RF4L070BGTCR datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4L070BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF4L070BGTCR datasheet?p=RF4L070BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4L070BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RF4G100BGTCR datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4G100BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF4G100BGTCR datasheet?p=RF4G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4G100BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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8+2.7 EUR
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RQ7G080BGTCR datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RQ7G080BGTCR datasheet?p=RQ7G080BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7G080BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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100+1.06 EUR
500+0.93 EUR
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BS2100F-E2
BS2100F-E2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML610Q178-022GAZ0AAL ML610Q178.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML610Q178-022GAZ0AX ML610Q178.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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SFR01MZPJ332 sfr-e.pdf
SFR01MZPJ332
Hersteller: Rohm Semiconductor
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
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84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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BM2P134Q-Z bm2p13xqx-e.pdf
BM2P134Q-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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BM2P121X-Z bm2pxx1x-z-e.pdf
BM2P121X-Z
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
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BM2SC124FP2-LBZE2 datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC124FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Produkt ist nicht verfügbar
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BM2SC124FP2-LBZE2 datasheet?p=BM2SC124FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC124FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
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BM2SC121FP2-LBZE2 datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC121FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Produkt ist nicht verfügbar
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BM2SC121FP2-LBZE2 datasheet?p=BM2SC121FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC121FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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RGTV80TK65DGVC11 datasheet?p=RGTV80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TK65DGVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
auf Bestellung 450 Stücke:
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3+8.46 EUR
30+4.68 EUR
120+3.84 EUR
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MCR03EZPFX8203 mcr-e.pdf
MCR03EZPFX8203
Hersteller: Rohm Semiconductor
Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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MCR03EZPFX8202 mcr-e.pdf
MCR03EZPFX8202
Hersteller: Rohm Semiconductor
Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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UMT1NFHATN datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT1NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
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3000+0.19 EUR
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3000+0.2 EUR
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3709 Stücke:
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23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
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BD57021MWV-E2 uqfn040v5050_1-e.pdf
BD57021MWV-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Produkt ist nicht verfügbar
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
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5000+0.064 EUR
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
auf Bestellung 9318 Stücke:
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46+0.46 EUR
90+0.24 EUR
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157+0.13 EUR
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1000+0.084 EUR
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 9989 Stücke:
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AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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19+1.11 EUR
29+0.74 EUR
100+0.5 EUR
500+0.39 EUR
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+1.2 EUR
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
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8+2.62 EUR
10+2.36 EUR
100+1.83 EUR
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RBR30NS60ATL datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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