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2SCR372PHZGT100Q 2SCR372PHZGT100Q Rohm Semiconductor datasheet?p=2SCR372PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 120V 0.7A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
14+1.26 EUR
100+0.83 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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2SCR375PHZGT100Q 2SCR375PHZGT100Q Rohm Semiconductor datasheet?p=2SCR375PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 120V 1.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR375PHZGT100Q 2SCR375PHZGT100Q Rohm Semiconductor datasheet?p=2SCR375PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 120V 1.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 1444 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+1.3 EUR
100+0.85 EUR
500+0.66 EUR
Mindestbestellmenge: 9
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2SCR512PHZGT100 2SCR512PHZGT100 Rohm Semiconductor datasheet?p=2SCR512PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.43 EUR
Mindestbestellmenge: 1000
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2SCR512PHZGT100 2SCR512PHZGT100 Rohm Semiconductor datasheet?p=2SCR512PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 12
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2SCR513PHZGT100 2SCR513PHZGT100 Rohm Semiconductor datasheet?p=2SCR513PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.36 EUR
2000+0.33 EUR
3000+0.31 EUR
Mindestbestellmenge: 1000
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2SCR513PHZGT100 2SCR513PHZGT100 Rohm Semiconductor datasheet?p=2SCR513PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3218 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
Mindestbestellmenge: 14
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2SCR514PHZGT100 2SCR514PHZGT100 Rohm Semiconductor datasheet?p=2SCR514PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 0.7A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.4 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
2SCR514PHZGT100 2SCR514PHZGT100 Rohm Semiconductor datasheet?p=2SCR514PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 0.7A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1135 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
Mindestbestellmenge: 13
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2SCR533PHZGT100 2SCR533PHZGT100 Rohm Semiconductor datasheet?p=2SCR533PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR533PHZGT100 2SCR533PHZGT100 Rohm Semiconductor datasheet?p=2SCR533PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
17+1.08 EUR
100+0.7 EUR
Mindestbestellmenge: 11
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2SCR544PHZGT100 2SCR544PHZGT100 Rohm Semiconductor datasheet?p=2SCR544PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR544PHZGT100 2SCR544PHZGT100 Rohm Semiconductor datasheet?p=2SCR544PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
2SCR552PHZGT100 2SCR552PHZGT100 Rohm Semiconductor datasheet?p=2SCR552PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR552PHZGT100 2SCR552PHZGT100 Rohm Semiconductor datasheet?p=2SCR552PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
15+1.18 EUR
100+0.77 EUR
500+0.6 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2SCR553PHZGT100 2SCR553PHZGT100 Rohm Semiconductor datasheet?p=2SCR553PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR553PHZGT100 2SCR553PHZGT100 Rohm Semiconductor datasheet?p=2SCR553PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
Mindestbestellmenge: 13
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2SCR554PHZGT100 2SCR554PHZGT100 Rohm Semiconductor datasheet?p=2SCR554PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 1.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR554PHZGT100 2SCR554PHZGT100 Rohm Semiconductor datasheet?p=2SCR554PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 1.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
16+1.13 EUR
100+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2SCR642PHZGT100 2SCR642PHZGT100 Rohm Semiconductor datasheet?p=2SCR642PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SCR642PHZGT100 2SCR642PHZGT100 Rohm Semiconductor datasheet?p=2SCR642PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
Mindestbestellmenge: 10
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BC847BU3HZGT106 BC847BU3HZGT106 Rohm Semiconductor datasheet?p=BC847BU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC847BU3HZGT106 BC847BU3HZGT106 Rohm Semiconductor datasheet?p=BC847BU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 45V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
61+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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UMT4401U3HZGT106 UMT4401U3HZGT106 Rohm Semiconductor datasheet?p=UMT4401U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMT4401U3HZGT106 UMT4401U3HZGT106 Rohm Semiconductor datasheet?p=UMT4401U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 2788 Stücke:
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12+1.5 EUR
20+0.93 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
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UMT4403U3HZGT106 UMT4403U3HZGT106 Rohm Semiconductor datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMT4403U3HZGT106 UMT4403U3HZGT106 Rohm Semiconductor datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
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DTA124XU3HZGT106 DTA124XU3HZGT106 Rohm Semiconductor datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XU3HZGT106 DTA124XU3HZGT106 Rohm Semiconductor datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BAV199HYT116 BAV199HYT116 Rohm Semiconductor datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAV199HYT116 BAV199HYT116 Rohm Semiconductor datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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GDZ8EPT2R6.2B Rohm Semiconductor Description: DIODE ZENER GMD2
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GDZT2R6.2B GDZT2R6.2B Rohm Semiconductor Description: DIODE ZENER 6.2V 100MW GMD2
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UFZVTE-176.2B UFZVTE-176.2B Rohm Semiconductor ufzvte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVTE-176.2B UFZVTE-176.2B Rohm Semiconductor ufzvte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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PDZVTR6.2B PDZVTR6.2B Rohm Semiconductor datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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PDZVTR6.2B PDZVTR6.2B Rohm Semiconductor datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
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500+0.31 EUR
1000+0.21 EUR
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UDZWTE-176.2B UDZWTE-176.2B Rohm Semiconductor Description: DIODE ZENER UMD2
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UFZVFHTE-176.2B UFZVFHTE-176.2B Rohm Semiconductor ufzvfhte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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UFZVFHTE-176.2B UFZVFHTE-176.2B Rohm Semiconductor ufzvfhte-176.2b-e.pdf Description: DIODE ZENER 6.2V 500MW UMD2
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YFZVFHTR6.2B YFZVFHTR6.2B Rohm Semiconductor datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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YFZVFHTR6.2B YFZVFHTR6.2B Rohm Semiconductor datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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SIM-032SSW1 Rohm Semiconductor Description: INFRARED EMITTER
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BA7809FP-E2 BA7809FP-E2 Rohm Semiconductor datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA7809FP-E2 BA7809FP-E2 Rohm Semiconductor datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
auf Bestellung 1454 Stücke:
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11+1.6 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
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BA00AST BA00AST Rohm Semiconductor BA00ST_BA00SFP.pdf Description: IC REG LINEAR POS ADJ 1A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Full Pack
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220-5 Full-Pak
Voltage - Output (Max): 25V
Voltage - Output (Min/Fixed): 1.225V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
Produkt ist nicht verfügbar
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RGS80TSX2DGC11 RGS80TSX2DGC11 Rohm Semiconductor datasheet?p=RGS80TSX2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 193 Stücke:
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1+21.47 EUR
30+12.99 EUR
120+11.14 EUR
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R6030ENXC7G R6030ENXC7G Rohm Semiconductor datasheet?p=R6030ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 30A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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R6030ENZC17 R6030ENZC17 Rohm Semiconductor datasheet?p=R6030ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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SP8K31HZGTB SP8K31HZGTB Rohm Semiconductor datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K31HZGTB SP8K31HZGTB Rohm Semiconductor datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB SP8K32HZGTB Rohm Semiconductor datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB SP8K32HZGTB Rohm Semiconductor datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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10+2.43 EUR
100+1.66 EUR
500+1.32 EUR
1000+1.21 EUR
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SP8K33HZGTB SP8K33HZGTB Rohm Semiconductor datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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SP8K33HZGTB SP8K33HZGTB Rohm Semiconductor datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
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10+2.93 EUR
100+2.01 EUR
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SML813WBC8W1HP Rohm Semiconductor SML813WBC8W.pdf Description: LED INDICATION SMD
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SML813WBC8W1AP SML813WBC8W1AP Rohm Semiconductor SML813WBC8W.pdf Description: LED INDICATION SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: White
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 1305 (3412)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
Produkt ist nicht verfügbar
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RD3P200SNTL1 RD3P200SNTL1 Rohm Semiconductor datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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RD3P200SNTL1 RD3P200SNTL1 Rohm Semiconductor datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 6980 Stücke:
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10+3.38 EUR
100+2.72 EUR
500+2.23 EUR
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R8007AND3FRATL R8007AND3FRATL Rohm Semiconductor datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
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2SCR372PHZGT100Q datasheet?p=2SCR372PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR372PHZGT100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 770 Stücke:
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Anzahl Preis
9+2.02 EUR
14+1.26 EUR
100+0.83 EUR
500+0.65 EUR
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2SCR375PHZGT100Q datasheet?p=2SCR375PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR375PHZGT100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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2SCR375PHZGT100Q datasheet?p=2SCR375PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR375PHZGT100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 1444 Stücke:
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Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.85 EUR
500+0.66 EUR
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2SCR512PHZGT100 datasheet?p=2SCR512PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR512PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+0.43 EUR
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2SCR512PHZGT100 datasheet?p=2SCR512PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR512PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
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2SCR513PHZGT100 datasheet?p=2SCR513PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR513PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
1000+0.36 EUR
2000+0.33 EUR
3000+0.31 EUR
Mindestbestellmenge: 1000
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2SCR513PHZGT100 datasheet?p=2SCR513PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR513PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3218 Stücke:
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Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
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2SCR514PHZGT100 datasheet?p=2SCR514PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR514PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+0.4 EUR
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2SCR514PHZGT100 datasheet?p=2SCR514PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR514PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1135 Stücke:
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Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
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2SCR533PHZGT100 datasheet?p=2SCR533PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR533PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR533PHZGT100 datasheet?p=2SCR533PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR533PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 164 Stücke:
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Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.7 EUR
Mindestbestellmenge: 11
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2SCR544PHZGT100 datasheet?p=2SCR544PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR544PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SCR544PHZGT100 datasheet?p=2SCR544PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR544PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
Mindestbestellmenge: 11
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2SCR552PHZGT100 datasheet?p=2SCR552PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR552PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SCR552PHZGT100 datasheet?p=2SCR552PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR552PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.77 EUR
500+0.6 EUR
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2SCR553PHZGT100 datasheet?p=2SCR553PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
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2SCR553PHZGT100 datasheet?p=2SCR553PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
Mindestbestellmenge: 13
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2SCR554PHZGT100 datasheet?p=2SCR554PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR554PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
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2SCR554PHZGT100 datasheet?p=2SCR554PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR554PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 105 Stücke:
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Anzahl Preis
10+1.81 EUR
16+1.13 EUR
100+0.74 EUR
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2SCR642PHZGT100 datasheet?p=2SCR642PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR642PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SCR642PHZGT100 datasheet?p=2SCR642PHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR642PHZGT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
Mindestbestellmenge: 10
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BC847BU3HZGT106 datasheet?p=BC847BU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BC847BU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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BC847BU3HZGT106 datasheet?p=BC847BU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BC847BU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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UMT4401U3HZGT106 datasheet?p=UMT4401U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4401U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
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UMT4401U3HZGT106 datasheet?p=UMT4401U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4401U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 2788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
20+0.93 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 12
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UMT4403U3HZGT106 datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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UMT4403U3HZGT106 datasheet?p=UMT4403U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 2887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
22+0.84 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
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DTA124XU3HZGT106 datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3HZGT106
Hersteller: Rohm Semiconductor
Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XU3HZGT106 datasheet?p=DTA124XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3HZGT106
Hersteller: Rohm Semiconductor
Description: DTA124XU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.55 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 27
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BAV199HYT116 datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV199HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAV199HYT116 datasheet?p=BAV199HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV199HYT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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GDZ8EPT2R6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER GMD2
Produkt ist nicht verfügbar
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GDZT2R6.2B
GDZT2R6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW GMD2
Produkt ist nicht verfügbar
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UFZVTE-176.2B ufzvte-176.2b-e.pdf
UFZVTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
Produkt ist nicht verfügbar
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UFZVTE-176.2B ufzvte-176.2b-e.pdf
UFZVTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
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PDZVTR6.2B datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
PDZVTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
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PDZVTR6.2B datasheet?p=PDZV6.2B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
PDZVTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.6 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 19308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.55 EUR
100+0.33 EUR
500+0.31 EUR
1000+0.21 EUR
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UDZWTE-176.2B
UDZWTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER UMD2
Produkt ist nicht verfügbar
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UFZVFHTE-176.2B ufzvfhte-176.2b-e.pdf
UFZVFHTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
Produkt ist nicht verfügbar
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UFZVFHTE-176.2B ufzvfhte-176.2b-e.pdf
UFZVFHTE-176.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW UMD2
auf Bestellung 2313 Stücke:
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YFZVFHTR6.2B datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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YFZVFHTR6.2B datasheet?p=YFZVFH6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.12V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 3008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 34
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SIM-032SSW1
Hersteller: Rohm Semiconductor
Description: INFRARED EMITTER
Produkt ist nicht verfügbar
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BA7809FP-E2 datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA7809FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA7809FP-E2 datasheet?p=BA7809FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA7809FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 64dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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BA00AST BA00ST_BA00SFP.pdf
BA00AST
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Full Pack
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220-5 Full-Pak
Voltage - Output (Max): 25V
Voltage - Output (Min/Fixed): 1.225V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
Produkt ist nicht verfügbar
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RGS80TSX2DGC11 datasheet?p=RGS80TSX2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TSX2DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
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1+21.47 EUR
30+12.99 EUR
120+11.14 EUR
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R6030ENXC7G datasheet?p=R6030ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030ENXC7G
Hersteller: Rohm Semiconductor
Description: 600V 30A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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3+6.58 EUR
50+5.04 EUR
100+4.93 EUR
500+2.32 EUR
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R6030ENZC17 datasheet?p=R6030ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 180 Stücke:
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3+6.64 EUR
30+5.51 EUR
120+2.79 EUR
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SP8K31HZGTB datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K31HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K31HZGTB datasheet?p=SP8K31HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K31HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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6+3.41 EUR
10+2.18 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.08 EUR
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SP8K32HZGTB datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K32HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K32HZGTB datasheet?p=SP8K32HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K32HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2114 Stücke:
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5+3.78 EUR
10+2.43 EUR
100+1.66 EUR
500+1.32 EUR
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SP8K33HZGTB datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K33HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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SP8K33HZGTB datasheet?p=SP8K33HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K33HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
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4+4.52 EUR
10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
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SML813WBC8W1HP SML813WBC8W.pdf
Hersteller: Rohm Semiconductor
Description: LED INDICATION SMD
Produkt ist nicht verfügbar
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SML813WBC8W1AP SML813WBC8W.pdf
SML813WBC8W1AP
Hersteller: Rohm Semiconductor
Description: LED INDICATION SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: White
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 1305 (3412)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
Produkt ist nicht verfügbar
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RD3P200SNTL1 datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 5000 Stücke:
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2500+1.72 EUR
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RD3P200SNTL1 datasheet?p=RD3P200SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P200SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 6980 Stücke:
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Anzahl Preis
5+3.77 EUR
10+3.38 EUR
100+2.72 EUR
500+2.23 EUR
1000+1.85 EUR
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R8007AND3FRATL datasheet?p=R8007AND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8007AND3FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+4.61 EUR
Mindestbestellmenge: 2500
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