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R8002ANJGTL R8002ANJGTL Rohm Semiconductor datasheet?p=R8002ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 2A POWER MOSFET : R8002
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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SFR18EZPJ360 SFR18EZPJ360 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
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SFR18EZPJ360 SFR18EZPJ360 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
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ML62Q1859-NNNGAZ0AX ML62Q1859-NNNGAZ0AX Rohm Semiconductor FEDL62Q1500Q1800.pdf Description: IC MCU 16BIT 512KB FLASH 64QFP
Core Size: 16-Bit
Data Converters: A/D 12x10b SAR; D/A 1x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 58
Part Status: Active
Supplier Device Package: 64-QFP (14x14)
Peripherals: POR, LED, PWM, WDT
Connectivity: I2C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
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ML62Q1869-NNNGAZ0AX Rohm Semiconductor Description: IC MCU 16BIT 512KB FLASH 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 72
Part Status: Active
Supplier Device Package: 80-QFP (14x14)
Peripherals: POR, LED, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR; D/A 2x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tray
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ML62Q1879-NNNGAZ0AX ML62Q1879-NNNGAZ0AX Rohm Semiconductor datasheet?p=ML62Q1879&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 512KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 92
Part Status: Active
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, LED, PWM, WDT
Connectivity: I2C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR; D/A 2x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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ML610Q172-113GAZWAX Rohm Semiconductor datasheet?p=ML610Q172&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 8BIT 128KB FLASH 64QFP
Number of I/O: 37
Part Status: Last Time Buy
Supplier Device Package: 64-QFP (14x14)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b SAR
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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BD433U2WEFJ-CE2 BD433U2WEFJ-CE2 Rohm Semiconductor datasheet?p=BD433U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
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BAT54HYT116 BAT54HYT116 Rohm Semiconductor datasheet?p=BAT54HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BAT54HYT116 BAT54HYT116 Rohm Semiconductor datasheet?p=BAT54HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
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BAT54HYFHT116 BAT54HYFHT116 Rohm Semiconductor datasheet?p=BAT54HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAT54HYFHT116 BAT54HYFHT116 Rohm Semiconductor datasheet?p=BAT54HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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LM339FVJ-E2 LM339FVJ-E2 Rohm Semiconductor datasheet?p=LM339FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-TSSOP-BJ
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM339FVJ-E2 LM339FVJ-E2 Rohm Semiconductor datasheet?p=LM339FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-TSSOP-BJ
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
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BR24G256FJ-5E2 BR24G256FJ-5E2 Rohm Semiconductor datasheet?p=BR24G256FJ-5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 256KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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BR24G256FJ-5E2 BR24G256FJ-5E2 Rohm Semiconductor datasheet?p=BR24G256FJ-5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 256KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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LM324FV-GE2 LM324FV-GE2 Rohm Semiconductor datasheet?p=LM324FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM324FV-GE2 LM324FV-GE2 Rohm Semiconductor datasheet?p=LM324FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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BA30DD0WT BA30DD0WT Rohm Semiconductor baxxdd0-e.pdf Description: IC REG LINEAR 3V 2A TO220FP-5
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BD00FD0WHFP-TR BD00FD0WHFP-TR Rohm Semiconductor bdxxfd0xxxx-e.pdf Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
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BD00FD0WHFP-TR BD00FD0WHFP-TR Rohm Semiconductor bdxxfd0xxxx-e.pdf Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
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EMX51T2R EMX51T2R Rohm Semiconductor datasheet?p=EMX51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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EMX51T2R EMX51T2R Rohm Semiconductor datasheet?p=EMX51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
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EMH25T2R EMH25T2R Rohm Semiconductor emh25.pdf Description: NPN+NPN DIGITAL TRANSISTOR(WITH
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EMH25T2R EMH25T2R Rohm Semiconductor emh25.pdf Description: NPN+NPN DIGITAL TRANSISTOR(WITH
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EMH53T2R EMH53T2R Rohm Semiconductor datasheet?p=EMH53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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EMH53T2R EMH53T2R Rohm Semiconductor datasheet?p=EMH53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
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EM6K33T2R EM6K33T2R Rohm Semiconductor datasheet?p=EM6K33&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EM6K33T2R EM6K33T2R Rohm Semiconductor datasheet?p=EM6K33&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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LM393FVT-E2 LM393FVT-E2 Rohm Semiconductor datasheet?p=LM393FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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LM393FVT-E2 LM393FVT-E2 Rohm Semiconductor datasheet?p=LM393FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2CH 8-TSSOP-B
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-TSSOP-B
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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LM393FVM-TR LM393FVM-TR Rohm Semiconductor datasheet?p=LM393FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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LM393FVM-TR LM393FVM-TR Rohm Semiconductor datasheet?p=LM393FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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RFUH20TB4SNZC9 RFUH20TB4SNZC9 Rohm Semiconductor datasheet?p=RFUH20TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
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RFN20TB4SNZC9 RFN20TB4SNZC9 Rohm Semiconductor datasheet?p=RFN20TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 430V 20A TO220NFM
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220NFM
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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BD70H31G-CTR BD70H31G-CTR Rohm Semiconductor datasheet?p=BD70H31G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BD70H31G-CTR BD70H31G-CTR Rohm Semiconductor datasheet?p=BD70H31G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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R6504KNXC7G R6504KNXC7G Rohm Semiconductor datasheet?p=R6504KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6504ENXC7G R6504ENXC7G Rohm Semiconductor datasheet?p=R6504ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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RD3U080CNTL1 RD3U080CNTL1 Rohm Semiconductor datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3U080CNTL1 RD3U080CNTL1 Rohm Semiconductor datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RD3L150SNTL1 RD3L150SNTL1 Rohm Semiconductor datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L150SNTL1 RD3L150SNTL1 Rohm Semiconductor datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SML-H12P8TT86C SML-H12P8TT86C Rohm Semiconductor datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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3000+0.18 EUR
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30000+0.14 EUR
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SML-H12P8TT86C SML-H12P8TT86C Rohm Semiconductor datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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SMLMN2BCTT86C SMLMN2BCTT86C Rohm Semiconductor datasheet?p=SMLMN2BCT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
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LM2901F-E2 LM2901F-E2 Rohm Semiconductor datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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LM2901F-E2 LM2901F-E2 Rohm Semiconductor datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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R6002ENHTB1 R6002ENHTB1 Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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R6002ENHTB1 R6002ENHTB1 Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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ML620Q156-607TBZWARL Rohm Semiconductor Description: IC
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DTA144WCAT116 DTA144WCAT116 Rohm Semiconductor datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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ML610Q174-480GAZWAX Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC
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BD91N01NUX-E2 BD91N01NUX-E2 Rohm Semiconductor datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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BD91N01NUX-E2 BD91N01NUX-E2 Rohm Semiconductor datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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RFUH20TB3SNZC9 RFUH20TB3SNZC9 Rohm Semiconductor datasheet?p=RFUH20TB3SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
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RFN5TF6SC9 RFN5TF6SC9 Rohm Semiconductor datasheet?p=RFN5TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RQ6E060ATTCR RQ6E060ATTCR Rohm Semiconductor datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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RQ6G050ATTCR RQ6G050ATTCR Rohm Semiconductor datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
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RQ6G050ATTCR RQ6G050ATTCR Rohm Semiconductor datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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R8002ANJGTL datasheet?p=R8002ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002ANJGTL
Hersteller: Rohm Semiconductor
Description: NCH 800V 2A POWER MOSFET : R8002
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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SFR18EZPJ360 sfr-e.pdf
SFR18EZPJ360
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
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SFR18EZPJ360 sfr-e.pdf
SFR18EZPJ360
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
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ML62Q1859-NNNGAZ0AX FEDL62Q1500Q1800.pdf
ML62Q1859-NNNGAZ0AX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 512KB FLASH 64QFP
Core Size: 16-Bit
Data Converters: A/D 12x10b SAR; D/A 1x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 58
Part Status: Active
Supplier Device Package: 64-QFP (14x14)
Peripherals: POR, LED, PWM, WDT
Connectivity: I2C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
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ML62Q1869-NNNGAZ0AX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 512KB FLASH 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 72
Part Status: Active
Supplier Device Package: 80-QFP (14x14)
Peripherals: POR, LED, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR; D/A 2x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tray
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ML62Q1879-NNNGAZ0AX datasheet?p=ML62Q1879&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1879-NNNGAZ0AX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 512KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 92
Part Status: Active
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, LED, PWM, WDT
Connectivity: I2C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b SAR; D/A 2x8b
Core Processor: nX-U16/100
EEPROM Size: 8K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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ML610Q172-113GAZWAX datasheet?p=ML610Q172&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 64QFP
Number of I/O: 37
Part Status: Last Time Buy
Supplier Device Package: 64-QFP (14x14)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b SAR
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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BD433U2WEFJ-CE2 datasheet?p=BD433U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD433U2WEFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
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2500+0.96 EUR
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BAT54HYT116 datasheet?p=BAT54HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54HYT116
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAT54HYT116 datasheet?p=BAT54HY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54HYT116
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SOT23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT-23
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BAT54HYFHT116 datasheet?p=BAT54HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAT54HYFHT116 datasheet?p=BAT54HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAT54HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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LM339FVJ-E2 datasheet?p=LM339FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM339FVJ-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-TSSOP-BJ
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM339FVJ-E2 datasheet?p=LM339FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM339FVJ-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-TSSOP-BJ
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
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BR24G256FJ-5E2 datasheet?p=BR24G256FJ-5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G256FJ-5E2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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BR24G256FJ-5E2 datasheet?p=BR24G256FJ-5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G256FJ-5E2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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LM324FV-GE2 datasheet?p=LM324FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM324FV-GE2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM324FV-GE2 datasheet?p=LM324FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM324FV-GE2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SSOP-B
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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BA30DD0WT baxxdd0-e.pdf
BA30DD0WT
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3V 2A TO220FP-5
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BD00FD0WHFP-TR bdxxfd0xxxx-e.pdf
BD00FD0WHFP-TR
Hersteller: Rohm Semiconductor
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
Produkt ist nicht verfügbar
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BD00FD0WHFP-TR bdxxfd0xxxx-e.pdf
BD00FD0WHFP-TR
Hersteller: Rohm Semiconductor
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
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EMX51T2R datasheet?p=EMX51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX51T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EMX51T2R datasheet?p=EMX51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX51T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
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EMH25T2R emh25.pdf
EMH25T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Produkt ist nicht verfügbar
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EMH25T2R emh25.pdf
EMH25T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
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EMH53T2R datasheet?p=EMH53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH53T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EMH53T2R datasheet?p=EMH53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH53T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
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EM6K33T2R datasheet?p=EM6K33&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K33T2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EM6K33T2R datasheet?p=EM6K33&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K33T2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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LM393FVT-E2 datasheet?p=LM393FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM393FVT-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM393FVT-E2 datasheet?p=LM393FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM393FVT-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-TSSOP-B
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-TSSOP-B
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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LM393FVM-TR datasheet?p=LM393FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM393FVM-TR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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3000+0.5 EUR
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LM393FVM-TR datasheet?p=LM393FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM393FVM-TR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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19+1.11 EUR
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RFUH20TB4SNZC9 datasheet?p=RFUH20TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH20TB4SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
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RFN20TB4SNZC9 datasheet?p=RFN20TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN20TB4SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220NFM
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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BD70H31G-CTR datasheet?p=BD70H31G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD70H31G-CTR
Hersteller: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD70H31G-CTR datasheet?p=BD70H31G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD70H31G-CTR
Hersteller: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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R6504KNXC7G datasheet?p=R6504KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6504ENXC7G datasheet?p=R6504ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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RD3U080CNTL1 datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080CNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RD3U080CNTL1 datasheet?p=RD3U080CN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080CNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RD3L150SNTL1 datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L150SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RD3L150SNTL1 datasheet?p=RD3L150SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L150SNTL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 24538 Stücke:
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SML-H12P8TT86C datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12P8TT86C
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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3000+0.18 EUR
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SML-H12P8TT86C datasheet?p=SML-H12P8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12P8TT86C
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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SMLMN2BCTT86C datasheet?p=SMLMN2BCT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLMN2BCTT86C
Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
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24+0.88 EUR
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LM2901F-E2 datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901F-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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LM2901F-E2 datasheet?p=LM2901F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2901F-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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R6002ENHTB1 datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENHTB1
Hersteller: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
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R6002ENHTB1 datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENHTB1
Hersteller: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 1499 Stücke:
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7+3.39 EUR
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ML620Q156-607TBZWARL
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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DTA144WCAT116 datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA144WCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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ML610Q174-480GAZWAX ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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BD91N01NUX-E2 datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD91N01NUX-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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BD91N01NUX-E2 datasheet?p=BD91N01NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD91N01NUX-E2
Hersteller: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
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8+2.89 EUR
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RFUH20TB3SNZC9 datasheet?p=RFUH20TB3SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH20TB3SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
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5+4.94 EUR
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RFN5TF6SC9 datasheet?p=RFN5TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN5TF6SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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5+4.86 EUR
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RQ6E060ATTCR datasheet?p=RQ6E060AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E060ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.44 EUR
100+0.94 EUR
500+0.73 EUR
Mindestbestellmenge: 10 Stücke
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RQ6G050ATTCR datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6G050ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.67 EUR
6000+0.62 EUR
9000+0.6 EUR
Mindestbestellmenge: 3000 Stücke
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RQ6G050ATTCR datasheet?p=RQ6G050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6G050ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 16657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 9 Stücke
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