Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (96975) > Seite 786 nach 1617

Wählen Sie Seite:   [  << Vorherige Seite ]  1 161 322 483 644 781 782 783 784 785 786 787 788 789 790 791 805 966 1127 1288 1449 1610 1617  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
BM6102FV-CE2 BM6102FV-CE2 Rohm Semiconductor datasheet?p=BM6102FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 14V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BM6104FV-CE2 BM6104FV-CE2 Rohm Semiconductor datasheet?p=BM6104FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD14000EFV-EVK-001 BD14000EFV-EVK-001 Rohm Semiconductor BD14000EFV-EVK_UsersGuide-E.pdf Description: EVAL BOARD FOR BD14000
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: BD14000
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
1+252.72 EUR
BD14000EFV-CE2 BD14000EFV-CE2 Rohm Semiconductor datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD14000EFV-CE2 BD14000EFV-CE2 Rohm Semiconductor datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 772 Stücke:
Lieferzeit 21-28 Tag (e)
1+35.46 EUR
10+ 32.59 EUR
25+ 31.24 EUR
100+ 27.53 EUR
250+ 26.17 EUR
500+ 24.49 EUR
R5005CNX R5005CNX Rohm Semiconductor R5005CNX Description: MOSFET N-CH 500V 5A TO220
auf Bestellung 466 Stücke:
Lieferzeit 21-28 Tag (e)
R5007ANX R5007ANX Rohm Semiconductor R5007ANX Description: MOSFET N-CH 500V 7A TO220
auf Bestellung 303 Stücke:
Lieferzeit 21-28 Tag (e)
R5007FNX R5007FNX Rohm Semiconductor r5007fnx-e.pdf Description: MOSFET N-CH 500V 7A TO220
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
R5011ANX R5011ANX Rohm Semiconductor 2SK2095N-v1.jpg Description: MOSFET N-CH 500V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
R5021ANX R5021ANX Rohm Semiconductor datasheet?p=R5021ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 21A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
R6004ENX R6004ENX Rohm Semiconductor r6004enx-e.pdf Description: MOSFET N-CH 600V 4A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.22 EUR
100+ 2.56 EUR
Mindestbestellmenge: 7
R6007ENX R6007ENX Rohm Semiconductor r6007enx-e.pdf Description: MOSFET N-CH 600V 7A TO220FM
auf Bestellung 146 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.03 EUR
10+ 5.41 EUR
100+ 4.35 EUR
Mindestbestellmenge: 5
R6009ENX R6009ENX Rohm Semiconductor r6009enx-e.pdf Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 397 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.89 EUR
10+ 7.98 EUR
100+ 6.54 EUR
Mindestbestellmenge: 3
R6011ENX R6011ENX Rohm Semiconductor r6011enx-e.pdf Description: MOSFET N-CH 600V 11A TO220FM
auf Bestellung 88 Stücke:
Lieferzeit 21-28 Tag (e)
R6015ENX R6015ENX Rohm Semiconductor r6015enx-e.pdf Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.79 EUR
10+ 7.38 EUR
Mindestbestellmenge: 3
R6020ENX R6020ENX Rohm Semiconductor r6020enx-e.pdf Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 56 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.29 EUR
10+ 7.43 EUR
Mindestbestellmenge: 4
R6024ENX R6024ENX Rohm Semiconductor r6024enx-e.pdf Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 464 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.79 EUR
10+ 7.38 EUR
Mindestbestellmenge: 3
R6030ENX R6030ENX Rohm Semiconductor r6030enx-e.pdf Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
R8005ANX R8005ANX Rohm Semiconductor r8005anx-e.pdf Description: MOSFET N-CH 800V 5A TO220FM
auf Bestellung 430 Stücke:
Lieferzeit 21-28 Tag (e)
R8010ANX R8010ANX Rohm Semiconductor r8010anx.pdf Description: MOSFET N-CH 800V 10A TO220FM
Produkt ist nicht verfügbar
RCX051N25 RCX051N25 Rohm Semiconductor datasheet?p=RCX051N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 419 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.46 EUR
100+ 1.91 EUR
Mindestbestellmenge: 9
RCX080N25 RCX080N25 Rohm Semiconductor datasheet?p=RCX080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.96 EUR
11+ 2.43 EUR
Mindestbestellmenge: 9
RCX081N20 RCX081N20 Rohm Semiconductor datasheet?p=RCX081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
13+ 2.09 EUR
Mindestbestellmenge: 11
RCX160N20 RCX160N20 Rohm Semiconductor datasheet?p=RCX160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Produkt ist nicht verfügbar
RCX200N20 RCX200N20 Rohm Semiconductor datasheet?p=RCX200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.06 EUR
Mindestbestellmenge: 7
RCX300N20 RCX300N20 Rohm Semiconductor datasheet?p=RCX300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
10+ 4.05 EUR
100+ 3.26 EUR
Mindestbestellmenge: 6
RCX450N20 RCX450N20 Rohm Semiconductor datasheet?p=RCX450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 45A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.02 EUR
10+ 5.88 EUR
100+ 4.76 EUR
500+ 4.23 EUR
Mindestbestellmenge: 4
RCX511N25 RCX511N25 Rohm Semiconductor datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.33 EUR
10+ 6.15 EUR
100+ 4.97 EUR
500+ 4.42 EUR
Mindestbestellmenge: 4
RCX700N20 RCX700N20 Rohm Semiconductor rcx700n20-e.pdf Description: MOSFET N-CH 200V 70A TO220
auf Bestellung 269 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.63 EUR
10+ 7.75 EUR
100+ 6.35 EUR
Mindestbestellmenge: 4
ZDX050N50 ZDX050N50 Rohm Semiconductor datasheet?p=ZDX050N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 185 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
12+ 2.19 EUR
100+ 1.7 EUR
Mindestbestellmenge: 10
ZDX080N50 ZDX080N50 Rohm Semiconductor datasheet?p=ZDX080N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 374 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.09 EUR
100+ 2.4 EUR
Mindestbestellmenge: 7
ZDX130N50 ZDX130N50 Rohm Semiconductor datasheet?p=ZDX130N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 13A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
EM6K31GT2R EM6K31GT2R Rohm Semiconductor em6k31-e.pdf Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 37819 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 32
EM6K34T2CR EM6K34T2CR Rohm Semiconductor datasheet?p=EM6K34&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT6
auf Bestellung 100212 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 29
ES6U1T2R ES6U1T2R Rohm Semiconductor es6u1-e Description: MOSFET P-CH 12V 1.3A 6WEMT
auf Bestellung 8330 Stücke:
Lieferzeit 21-28 Tag (e)
ES6U3T2CR ES6U3T2CR Rohm Semiconductor es6u3.pdf Description: MOSFET N-CH 30V 1.4A WEMT6
auf Bestellung 7980 Stücke:
Lieferzeit 21-28 Tag (e)
HP8KA1TB HP8KA1TB Rohm Semiconductor datasheet?p=HP8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.81 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
HS8K11TB HS8K11TB Rohm Semiconductor datasheet?p=HS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 7A/11A HSML
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 1370 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
QH8MA2TCR QH8MA2TCR Rohm Semiconductor datasheet?p=QH8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 1750 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.4 EUR
22+ 1.23 EUR
100+ 0.95 EUR
500+ 0.75 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 19
QS8J13TR QS8J13TR Rohm Semiconductor datasheet?p=QS8J13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2718 Stücke:
Lieferzeit 21-28 Tag (e)
13+2 EUR
16+ 1.72 EUR
100+ 1.19 EUR
500+ 0.99 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 13
R5009FNJTL R5009FNJTL Rohm Semiconductor r5009fnjtl-e.pdf Description: MOSFET N-CH 500V 9A LPTS
auf Bestellung 992 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.01 EUR
10+ 5.39 EUR
100+ 4.33 EUR
500+ 3.56 EUR
Mindestbestellmenge: 5
R5011FNJTL R5011FNJTL Rohm Semiconductor datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 11A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 1965 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.21 EUR
10+ 3.49 EUR
100+ 2.78 EUR
500+ 2.35 EUR
Mindestbestellmenge: 7
R5016FNJTL R5016FNJTL Rohm Semiconductor datasheet?p=R5016FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 16A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 8A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 816 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.47 EUR
10+ 5.45 EUR
100+ 4.41 EUR
500+ 3.92 EUR
Mindestbestellmenge: 5
R6002ENDTL R6002ENDTL Rohm Semiconductor datasheet?p=R6002END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 1.7A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
R6004ENDTL R6004ENDTL Rohm Semiconductor datasheet?p=R6004END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2521 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.8 EUR
10+ 3.38 EUR
100+ 2.64 EUR
500+ 2.18 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
R6004ENJTL R6004ENJTL Rohm Semiconductor datasheet?p=R6004ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
R6007ENJTL R6007ENJTL Rohm Semiconductor r6007enjtl-e.pdf Description: MOSFET N-CH 600V 7A LPTS
auf Bestellung 658 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.81 EUR
10+ 4.31 EUR
100+ 3.47 EUR
500+ 2.85 EUR
Mindestbestellmenge: 6
R6009ENJTL R6009ENJTL Rohm Semiconductor datasheet?p=R6009ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
R6011ENJTL R6011ENJTL Rohm Semiconductor r6011enjtl-e.pdf Description: MOSFET N-CH 600V 11A LPTS
auf Bestellung 440 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.26 EUR
10+ 8.31 EUR
100+ 6.81 EUR
Mindestbestellmenge: 3
R6012FNJTL R6012FNJTL Rohm Semiconductor r6012fnj.pdf Description: MOSFET N-CH 600V 12A LPT
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
R6015ENJTL R6015ENJTL Rohm Semiconductor datasheet?p=R6015ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.26 EUR
Mindestbestellmenge: 3
R6015FNJTL R6015FNJTL Rohm Semiconductor datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.98 EUR
10+ 6.69 EUR
100+ 5.41 EUR
500+ 4.81 EUR
Mindestbestellmenge: 4
R6020ENJTL R6020ENJTL Rohm Semiconductor datasheet?p=R6020ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 9061 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
10+ 5.41 EUR
100+ 4.37 EUR
500+ 3.89 EUR
Mindestbestellmenge: 5
R6020FNJTL R6020FNJTL Rohm Semiconductor datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 960 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.44 EUR
10+ 8.47 EUR
100+ 6.94 EUR
500+ 5.91 EUR
Mindestbestellmenge: 3
R6024ENJTL R6024ENJTL Rohm Semiconductor datasheet?p=R6024ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 831 Stücke:
Lieferzeit 21-28 Tag (e)
3+9 EUR
10+ 7.57 EUR
100+ 6.12 EUR
500+ 5.44 EUR
Mindestbestellmenge: 3
RAL025P01TCR RAL025P01TCR Rohm Semiconductor ral025p01tcr-e Description: MOSFET P-CH 12V 2.5A TUMT6
Produkt ist nicht verfügbar
RCD041N25TL RCD041N25TL Rohm Semiconductor rcd041n25.pdf Description: MOSFET N-CH 250V 4A CPT3
auf Bestellung 2495 Stücke:
Lieferzeit 21-28 Tag (e)
RCD051N20TL RCD051N20TL Rohm Semiconductor rcd051n20.pdf Description: MOSFET N-CH 200V 5A CPT3
auf Bestellung 2085 Stücke:
Lieferzeit 21-28 Tag (e)
RCD075N19TL RCD075N19TL Rohm Semiconductor rcd075n19.pdf Description: MOSFET N-CH 190V 7.5A CPT3
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
RCD100N19TL RCD100N19TL Rohm Semiconductor datasheet?p=RCD100N19&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 190V 10A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1108 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.33 EUR
10+ 2.72 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
BM6102FV-CE2 datasheet?p=BM6102FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM6102FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 14V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BM6104FV-CE2 datasheet?p=BM6104FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM6104FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD14000EFV-EVK-001 BD14000EFV-EVK_UsersGuide-E.pdf
BD14000EFV-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD14000
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: BD14000
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+252.72 EUR
BD14000EFV-CE2 datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD14000EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD14000EFV-CE2 datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD14000EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 772 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+35.46 EUR
10+ 32.59 EUR
25+ 31.24 EUR
100+ 27.53 EUR
250+ 26.17 EUR
500+ 24.49 EUR
R5005CNX R5005CNX
R5005CNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 5A TO220
auf Bestellung 466 Stücke:
Lieferzeit 21-28 Tag (e)
R5007ANX R5007ANX
R5007ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 7A TO220
auf Bestellung 303 Stücke:
Lieferzeit 21-28 Tag (e)
R5007FNX r5007fnx-e.pdf
R5007FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 7A TO220
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
R5011ANX 2SK2095N-v1.jpg
R5011ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
R5021ANX datasheet?p=R5021ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5021ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 21A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
R6004ENX r6004enx-e.pdf
R6004ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.22 EUR
100+ 2.56 EUR
Mindestbestellmenge: 7
R6007ENX r6007enx-e.pdf
R6007ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
auf Bestellung 146 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.03 EUR
10+ 5.41 EUR
100+ 4.35 EUR
Mindestbestellmenge: 5
R6009ENX r6009enx-e.pdf
R6009ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 397 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.89 EUR
10+ 7.98 EUR
100+ 6.54 EUR
Mindestbestellmenge: 3
R6011ENX r6011enx-e.pdf
R6011ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
auf Bestellung 88 Stücke:
Lieferzeit 21-28 Tag (e)
R6015ENX r6015enx-e.pdf
R6015ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.79 EUR
10+ 7.38 EUR
Mindestbestellmenge: 3
R6020ENX r6020enx-e.pdf
R6020ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 56 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.29 EUR
10+ 7.43 EUR
Mindestbestellmenge: 4
R6024ENX r6024enx-e.pdf
R6024ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 464 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.79 EUR
10+ 7.38 EUR
Mindestbestellmenge: 3
R6030ENX r6030enx-e.pdf
R6030ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
R8005ANX r8005anx-e.pdf
R8005ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A TO220FM
auf Bestellung 430 Stücke:
Lieferzeit 21-28 Tag (e)
R8010ANX r8010anx.pdf
R8010ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 10A TO220FM
Produkt ist nicht verfügbar
RCX051N25 datasheet?p=RCX051N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX051N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 419 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
11+ 2.46 EUR
100+ 1.91 EUR
Mindestbestellmenge: 9
RCX080N25 datasheet?p=RCX080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX080N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.96 EUR
11+ 2.43 EUR
Mindestbestellmenge: 9
RCX081N20 datasheet?p=RCX081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX081N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.55 EUR
13+ 2.09 EUR
Mindestbestellmenge: 11
RCX160N20 datasheet?p=RCX160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX160N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Produkt ist nicht verfügbar
RCX200N20 datasheet?p=RCX200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX200N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.74 EUR
10+ 3.06 EUR
Mindestbestellmenge: 7
RCX300N20 datasheet?p=RCX300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX300N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 4.05 EUR
100+ 3.26 EUR
Mindestbestellmenge: 6
RCX450N20 datasheet?p=RCX450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX450N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.02 EUR
10+ 5.88 EUR
100+ 4.76 EUR
500+ 4.23 EUR
Mindestbestellmenge: 4
RCX511N25 datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX511N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.33 EUR
10+ 6.15 EUR
100+ 4.97 EUR
500+ 4.42 EUR
Mindestbestellmenge: 4
RCX700N20 rcx700n20-e.pdf
RCX700N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A TO220
auf Bestellung 269 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.63 EUR
10+ 7.75 EUR
100+ 6.35 EUR
Mindestbestellmenge: 4
ZDX050N50 datasheet?p=ZDX050N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX050N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 185 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.65 EUR
12+ 2.19 EUR
100+ 1.7 EUR
Mindestbestellmenge: 10
ZDX080N50 datasheet?p=ZDX080N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX080N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 374 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.09 EUR
100+ 2.4 EUR
Mindestbestellmenge: 7
ZDX130N50 datasheet?p=ZDX130N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX130N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 13A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
EM6K31GT2R em6k31-e.pdf
EM6K31GT2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 37819 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 32
EM6K34T2CR datasheet?p=EM6K34&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K34T2CR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT6
auf Bestellung 100212 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 29
ES6U1T2R es6u1-e
ES6U1T2R
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
auf Bestellung 8330 Stücke:
Lieferzeit 21-28 Tag (e)
ES6U3T2CR es6u3.pdf
ES6U3T2CR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A WEMT6
auf Bestellung 7980 Stücke:
Lieferzeit 21-28 Tag (e)
HP8KA1TB datasheet?p=HP8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8KA1TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.81 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
HS8K11TB datasheet?p=HS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HS8K11TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 1370 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
QH8MA2TCR datasheet?p=QH8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 1750 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
22+ 1.23 EUR
100+ 0.95 EUR
500+ 0.75 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 19
QS8J13TR datasheet?p=QS8J13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8J13TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2718 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
16+ 1.72 EUR
100+ 1.19 EUR
500+ 0.99 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 13
R5009FNJTL r5009fnjtl-e.pdf
R5009FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A LPTS
auf Bestellung 992 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.01 EUR
10+ 5.39 EUR
100+ 4.33 EUR
500+ 3.56 EUR
Mindestbestellmenge: 5
R5011FNJTL datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5011FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 1965 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.21 EUR
10+ 3.49 EUR
100+ 2.78 EUR
500+ 2.35 EUR
Mindestbestellmenge: 7
R5016FNJTL datasheet?p=R5016FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5016FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 16A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 8A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 816 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.47 EUR
10+ 5.45 EUR
100+ 4.41 EUR
500+ 3.92 EUR
Mindestbestellmenge: 5
R6002ENDTL datasheet?p=R6002END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 1.7A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
R6004ENDTL datasheet?p=R6004END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004ENDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2521 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.8 EUR
10+ 3.38 EUR
100+ 2.64 EUR
500+ 2.18 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
R6004ENJTL datasheet?p=R6004ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
R6007ENJTL r6007enjtl-e.pdf
R6007ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
auf Bestellung 658 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
10+ 4.31 EUR
100+ 3.47 EUR
500+ 2.85 EUR
Mindestbestellmenge: 6
R6009ENJTL datasheet?p=R6009ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
R6011ENJTL r6011enjtl-e.pdf
R6011ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A LPTS
auf Bestellung 440 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.26 EUR
10+ 8.31 EUR
100+ 6.81 EUR
Mindestbestellmenge: 3
R6012FNJTL r6012fnj.pdf
R6012FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPT
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
R6015ENJTL datasheet?p=R6015ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.26 EUR
Mindestbestellmenge: 3
R6015FNJTL datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.98 EUR
10+ 6.69 EUR
100+ 5.41 EUR
500+ 4.81 EUR
Mindestbestellmenge: 4
R6020ENJTL datasheet?p=R6020ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 9061 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
10+ 5.41 EUR
100+ 4.37 EUR
500+ 3.89 EUR
Mindestbestellmenge: 5
R6020FNJTL datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.44 EUR
10+ 8.47 EUR
100+ 6.94 EUR
500+ 5.91 EUR
Mindestbestellmenge: 3
R6024ENJTL datasheet?p=R6024ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 831 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9 EUR
10+ 7.57 EUR
100+ 6.12 EUR
500+ 5.44 EUR
Mindestbestellmenge: 3
RAL025P01TCR ral025p01tcr-e
RAL025P01TCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Produkt ist nicht verfügbar
RCD041N25TL rcd041n25.pdf
RCD041N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A CPT3
auf Bestellung 2495 Stücke:
Lieferzeit 21-28 Tag (e)
RCD051N20TL rcd051n20.pdf
RCD051N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
auf Bestellung 2085 Stücke:
Lieferzeit 21-28 Tag (e)
RCD075N19TL rcd075n19.pdf
RCD075N19TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 190V 7.5A CPT3
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
RCD100N19TL datasheet?p=RCD100N19&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCD100N19TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 190V 10A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1108 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.33 EUR
10+ 2.72 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
Wählen Sie Seite:   [  << Vorherige Seite ]  1 161 322 483 644 781 782 783 784 785 786 787 788 789 790 791 805 966 1127 1288 1449 1610 1617  [ Nächste Seite >> ]