Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (105892) > Seite 791 nach 1765
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| CSL0901WT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CLens Size: 1.14mm Dia Lens Style: Round with Domed Top Part Status: Active Lens Transparency: Clear Supplier Device Package: 0603 Wavelength - Dominant: 590nm Height (Max): 1.34mm Current - Test: 20mA Lens Color: Colorless Voltage - Forward (Vf) (Typ): 2.1V Millicandela Rating: 320mcd Mounting Type: Surface Mount Size / Dimension: 1.60mm L x 0.80mm W Color: Yellow Package / Case: 0603 (1608 Metric) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSL0901DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
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CSL0901MT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow-Green Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 571nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
auf Bestellung 3708 Stücke: Lieferzeit 10-14 Tag (e) |
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CSL0901VT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
auf Bestellung 1067 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSL0901WT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; C |
auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGCL60TS60DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247NPower - Max: 111 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 48 A Part Status: Not For New Designs Gate Charge: 68 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 770µJ (on), 1.11mJ (off) Td (on/off) @ 25°C: 44ns/186ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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RGCL60TS60GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247NPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
auf Bestellung 362 Stücke: Lieferzeit 10-14 Tag (e) |
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RGCL80TS60DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 600V 65A TO247NPower - Max: 148 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Gate Charge: 98 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.11mJ (on), 1.68mJ (off) Td (on/off) @ 25°C: 53ns/227ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGCL80TS60GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 65A TO-247NPower - Max: 148 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Gate Charge: 98 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.11mJ (on), 1.68mJ (off) Td (on/off) @ 25°C: 53ns/227ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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RB085T-90NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 10A TO220FNCurrent - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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RGC80TSX8RGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 1800V 80A TO-247NPower - Max: 535 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 1800 V Current - Collector (Ic) (Max): 80 A Gate Charge: 468 nC Test Condition: 600V, 40A, 10Ohm, 15V Switching Energy: 1.85mJ (on), 1.6mJ (off) Td (on/off) @ 25°C: 80ns/565ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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RGCL60TK60DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 30A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 54 W |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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RGCL60TK60GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 30A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 54 W |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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RGCL80TK60GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 600V 35A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 57 W |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 651 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 9A TO-220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 22 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT30NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A TO-262Power - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns IGBT Type: Trench Field Stop Supplier Device Package: TO-262 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 2894 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT30TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 14A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 32 W |
auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT40NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 40A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT40TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 17A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 39 W |
auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 21A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
auf Bestellung 864 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 5A TO-220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 16 W |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH00TK65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 35A TO-3PFMPower - Max: 72 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 35 A Part Status: Active Gate Charge: 94 nC Test Condition: 400V, 50A, 10Ohm, 15V Td (on/off) @ 25°C: 39ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH60TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 28A TO-3PFMPower - Max: 61 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 28 A Part Status: Active Gate Charge: 58 nC Test Condition: 400V, 30A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH60TK65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 28A TO-3PFMCurrent - Collector (Ic) (Max): 28 A Part Status: Active Gate Charge: 58 nC Test Condition: 400V, 30A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Power - Max: 61 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH80TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 31A TO3PFMTd (on/off) @ 25°C: 34ns/120ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 66 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 31 A Part Status: Active Gate Charge: 79 nC Test Condition: 400V, 40A, 10Ohm, 15V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTVX6TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 144A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 320 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 144 A Part Status: Not For New Designs Gate Charge: 171 nC Test Condition: 400V, 80A, 10Ohm, 15V Switching Energy: 2.65mJ (on), 1.8mJ (off) Td (on/off) @ 25°C: 45ns/201ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Reverse Recovery Time (trr): 109 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C3V9LT116 | Rohm Semiconductor |
Description: DIODE ZENER 3.9V 250MW SSD3Current - Reverse Leakage @ Vr: 3 µA @ 1 V Power - Max: 250 mW Part Status: Not For New Designs Supplier Device Package: SSD3 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5.12% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C5V6LT116 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 250MW SSD3Packaging: Tape & Reel (TR) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C5V6LT116 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 250MW SSD3Packaging: Cut Tape (CT) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 8974 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGT16NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT30NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A LPDSPower - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns IGBT Type: Trench Field Stop Supplier Device Package: LPDS Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGT30NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A LPDSIGBT Type: Trench Field Stop Supplier Device Package: LPDS Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Power - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGT40NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGT40NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 1357 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RGT8NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
auf Bestellung 972 Stücke: Lieferzeit 10-14 Tag (e) |
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RRD07MM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 700MA PMDU |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RRD07MM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 700MA PMDU |
auf Bestellung 7890 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P0161-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161Power - Output: 7.5 W Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Primary and Secondary Side Utilized IC / Part: BM2P0161 Regulator Topology: Buck Frequency - Switching: 65kHz Contents: Board(s) Current - Output: 500mA Voltage - Input: 90 ~ 264 VAC Voltage - Output: 15V Packaging: Box |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P0161-EVK-002 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161Power - Output: 6 W Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Primary and Secondary Side Utilized IC / Part: BM2P0161 Regulator Topology: Buck Frequency - Switching: 65kHz Contents: Board(s) Current - Output: 500mA Voltage - Input: 90 ~ 264 VAC Voltage - Output: 12V Packaging: Box |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P0161-EVK-003 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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BD62120AEFJ-E2 | Rohm Semiconductor |
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 2A Interface: On/Off Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 28V Applications: Printer Technology: DMOS Supplier Device Package: 8-HTSOP-J Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 33307 Stücke: Lieferzeit 10-14 Tag (e) |
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BD63130AFM-E2 | Rohm Semiconductor |
Description: H-BRIDGE MOTOR DRIVER FOR DC BRUMounting Type: Surface Mount Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Packaging: Cut Tape (CT) Part Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 36-HSOP-M Technology: DMOS Applications: Printer Voltage - Supply: 8V ~ 46.2V Output Configuration: Pre-Driver - Half Bridge (2) Operating Temperature: -25°C ~ 85°C (TA) Interface: On/Off Current - Output: 3A Function: Driver |
auf Bestellung 5102 Stücke: Lieferzeit 10-14 Tag (e) |
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BD63565EFV-E2 | Rohm Semiconductor |
Description: DUAL H-BRIDGE MOTOR DRIVER WHICHPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 20-HTSSOP-B Voltage - Load: 1.8V ~ 16V Technology: DMOS Applications: Appliance Voltage - Supply: 2.5V ~ 5.5V Output Configuration: Pre-Driver - Half Bridge (2) Current - Output: 1A Function: Driver Mounting Type: Surface Mount Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 85°C Interface: PWM |
auf Bestellung 2101 Stücke: Lieferzeit 10-14 Tag (e) |
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EM6K7T2CR | Rohm Semiconductor |
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL |
auf Bestellung 7962 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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QH8K51TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 2536 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P08BBDTL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 80A TO252Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 119W (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 9368 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4C100BCTCR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 2W (Ta) |
auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSL0901WT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CSL0901YT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Lens Size: 1.14mm Dia
Lens Style: Round with Domed Top
Part Status: Active
Lens Transparency: Clear
Supplier Device Package: 0603
Wavelength - Dominant: 590nm
Height (Max): 1.34mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Millicandela Rating: 320mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Yellow
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Lens Size: 1.14mm Dia
Lens Style: Round with Domed Top
Part Status: Active
Lens Transparency: Clear
Supplier Device Package: 0603
Wavelength - Dominant: 590nm
Height (Max): 1.34mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Millicandela Rating: 320mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Yellow
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSL0901DT1 |
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Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.4 EUR |
| CSL0901MT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSL0901PT |
Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| CSL0901UT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 3708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
| CSL0901VT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 1067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| CSL0901WT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
auf Bestellung 1366 Stücke:
Lieferzeit 10-14 Tag (e)
| CSL0901YT |
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Hersteller: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| RGCL60TS60DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Power - Max: 111 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 68 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 770µJ (on), 1.11mJ (off)
Td (on/off) @ 25°C: 44ns/186ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IGBT TRENCH FS 600V 48A TO-247N
Power - Max: 111 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 68 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 770µJ (on), 1.11mJ (off)
Td (on/off) @ 25°C: 44ns/186ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.09 EUR |
| 10+ | 6.74 EUR |
| RGCL60TS60GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.07 EUR |
| 10+ | 6.03 EUR |
| RGCL80TS60DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N
Power - Max: 148 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 98 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 53ns/227ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IGBT TRNCH FIELD 600V 65A TO247N
Power - Max: 148 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 98 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 53ns/227ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RGCL80TS60GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 65A TO-247N
Power - Max: 148 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 98 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 53ns/227ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IGBT TRENCH FS 600V 65A TO-247N
Power - Max: 148 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 98 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 53ns/227ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.11 EUR |
| 10+ | 3.31 EUR |
| RB085T-90NZC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 50+ | 1.29 EUR |
| RGC80TSX8RGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 1800V 80A TO-247N
Power - Max: 535 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 468 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 80ns/565ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1800V 80A TO-247N
Power - Max: 535 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 468 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 80ns/565ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.34 EUR |
| RGCL60TK60DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.27 EUR |
| 30+ | 7 EUR |
| RGCL60TK60GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.6 EUR |
| 30+ | 6 EUR |
| RGCL80TK60GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.87 EUR |
| 10+ | 8.28 EUR |
| RGT16NS65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 651 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.56 EUR |
| 50+ | 3.3 EUR |
| 100+ | 2.98 EUR |
| 500+ | 2.43 EUR |
| RGT16TM65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 10+ | 3.94 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.37 EUR |
| RGT30NS65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A TO-262
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: IGBT TRENCH FS 650V 30A TO-262
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.94 EUR |
| 50+ | 3.51 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.84 EUR |
| RGT30TM65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.38 EUR |
| 50+ | 3.75 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.77 EUR |
| RGT40NS65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.65 EUR |
| 100+ | 2.75 EUR |
| RGT40TM65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
auf Bestellung 1825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.04 EUR |
| 50+ | 4.11 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.07 EUR |
| 1000+ | 2.86 EUR |
| RGT50NS65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.63 EUR |
| 50+ | 4.46 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.37 EUR |
| RGT50TM65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.82 EUR |
| 50+ | 4.55 EUR |
| 100+ | 4.13 EUR |
| 500+ | 3.4 EUR |
| RGT8NS65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |
| RGT8TM65DGC9 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.34 EUR |
| 50+ | 2.64 EUR |
| 100+ | 2.38 EUR |
| 500+ | 1.92 EUR |
| RGTH00TK65GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.58 EUR |
| 30+ | 4.15 EUR |
| 120+ | 3.4 EUR |
| RGTH60TK65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.44 EUR |
| 30+ | 4.06 EUR |
| 120+ | 3.32 EUR |
| RGTH60TK65GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.4 EUR |
| 30+ | 7.08 EUR |
| 120+ | 5.91 EUR |
| RGTH80TK65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10 EUR |
| 30+ | 5.94 EUR |
| RGTVX6TS65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.71 EUR |
| 10+ | 11.96 EUR |
| BZX84C3V9LT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C5V6LT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C5V6LT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 96+ | 0.21 EUR |
| 154+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| RGT16BM65DTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.73 EUR |
| 5000+ | 1.62 EUR |
| RGT16BM65DTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 8974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.98 EUR |
| RGT16NL65DGTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RGT16NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.03 EUR |
| 10+ | 3.93 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.23 EUR |
| RGT30NL65DGTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RGT30NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGT40NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RGT40NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.44 EUR |
| 10+ | 4.89 EUR |
| 100+ | 3.44 EUR |
| 500+ | 3.13 EUR |
| RGT50NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.86 EUR |
| RGT50NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 10+ | 5.26 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.44 EUR |
| RGT8NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RGT8NL65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 10+ | 3.3 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.88 EUR |
| RRD07MM4STR |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Description: DIODE STANDARD 400V 700MA PMDU
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| RRD07MM4STR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Description: DIODE STANDARD 400V 700MA PMDU
auf Bestellung 7890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| BM2P0161-EVK-001 |
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Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 210.9 EUR |
| BM2P0161-EVK-002 |
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Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 210.9 EUR |
| BM2P0161-EVK-003 |
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Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Description: EVAL BOARD FOR BM2P0161
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 247.45 EUR |
| BD62120AEFJ-E2 |
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Hersteller: Rohm Semiconductor
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 33307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.25 EUR |
| 10+ | 3.15 EUR |
| 25+ | 2.87 EUR |
| 100+ | 2.57 EUR |
| 250+ | 2.43 EUR |
| 500+ | 2.36 EUR |
| BD63130AFM-E2 |
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Hersteller: Rohm Semiconductor
Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
auf Bestellung 5102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.79 EUR |
| 10+ | 6.7 EUR |
| 25+ | 6.18 EUR |
| 100+ | 5.6 EUR |
| 250+ | 5.33 EUR |
| 500+ | 5.16 EUR |
| BD63565EFV-E2 |
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Hersteller: Rohm Semiconductor
Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
auf Bestellung 2101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.93 EUR |
| 10+ | 3.67 EUR |
| 25+ | 3.36 EUR |
| 100+ | 3.01 EUR |
| 250+ | 2.86 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.67 EUR |
| EM6K7T2CR |
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Hersteller: Rohm Semiconductor
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
auf Bestellung 7962 Stücke:
Lieferzeit 10-14 Tag (e)
| QH8K51TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2536 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.98 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| RD3P08BBDTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.83 EUR |
| 10+ | 4.47 EUR |
| 100+ | 3.13 EUR |
| 500+ | 2.77 EUR |
| RF4C100BCTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
























