Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103516) > Seite 792 nach 1726
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UDZVFHTE-1730B | Rohm Semiconductor |
Description: DIODE ZENER 29.94V 200MW UMD2Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 23 V Power - Max: 200 mW Grade: Automotive Supplier Device Package: UMD2 Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 29.94 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2.5% Packaging: Cut Tape (CT) |
auf Bestellung 3419 Stücke: Lieferzeit 10-14 Tag (e) |
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UDZVFHTE-174.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.65V 200MW UMD2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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UDZVFHTE-175.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.61V 200MW UMD2 |
auf Bestellung 2765 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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UDZVFHTE-176.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.79V 200MW UMD2 |
auf Bestellung 9005 Stücke: Lieferzeit 10-14 Tag (e) |
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BA82904YF-CE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOP |
auf Bestellung 2314 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD63573NUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSONPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: VSON010V3030 Voltage - Load: 2V ~ 16V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -30°C ~ 85°C Interface: Logic Current - Output: 1.2A Function: Driver Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CDZFHT2RA36B | Rohm Semiconductor |
Description: DIODE ZENER 36.97V 100MW VMN2Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 27 V Power - Max: 100 mW Grade: Automotive Supplier Device Package: VMN2 (SOD-923) Impedance (Max) (Zzt): 300 Ohms Voltage - Zener (Nom) (Vz): 36.97 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Tolerance: ±2.5% Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead |
Produkt ist nicht verfügbar |
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MSL0601RGBU1 | Rohm Semiconductor |
Description: LED RGB SIDE SMD R/APackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 2.90mm L x 1.35mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue Configuration: Common Anode Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 1.10mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: SMD Lens Style: Rectangle with Flat Top Lens Size: 2.90mm x 1.35mm |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D12D8WT86C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 1608 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 10mA Height (Max): 0.65mm Wavelength - Dominant: 605nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Grade: Automotive Qualification: AEC-Q102 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D13WWT86C | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1608 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 110mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Viewing Angle: 160° Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Grade: Automotive Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Qualification: AEC-Q102 |
Produkt ist nicht verfügbar |
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BD63573NUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSONPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: VSON010V3030 Voltage - Load: 2V ~ 16V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -30°C ~ 85°C Interface: Logic Current - Output: 1.2A Function: Driver Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5871 Stücke: Lieferzeit 10-14 Tag (e) |
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CDZFHT2RA36B | Rohm Semiconductor |
Description: DIODE ZENER 36.97V 100MW VMN2Grade: Automotive Supplier Device Package: VMN2 (SOD-923) Impedance (Max) (Zzt): 300 Ohms Voltage - Zener (Nom) (Vz): 36.97 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Tolerance: ±2.5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 27 V Power - Max: 100 mW |
auf Bestellung 7421 Stücke: Lieferzeit 10-14 Tag (e) |
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MSL0601RGBU1 | Rohm Semiconductor |
Description: LED RGB SIDE SMD R/APackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 2.90mm L x 1.35mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue Configuration: Common Anode Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 1.10mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: SMD Lens Style: Rectangle with Flat Top Lens Size: 2.90mm x 1.35mm |
auf Bestellung 8573 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D12D8WT86C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 1608 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 10mA Height (Max): 0.65mm Wavelength - Dominant: 605nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Grade: Automotive Qualification: AEC-Q102 |
auf Bestellung 4381 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D13WWT86C | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1608 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 110mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Viewing Angle: 160° Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Grade: Automotive Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Qualification: AEC-Q102 |
auf Bestellung 1570 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS16HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAV70HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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BAV99HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS16HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3567 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAV99HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Current - Reverse Leakage @ Vr: 100 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 3863 Stücke: Lieferzeit 10-14 Tag (e) |
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LMR1802G-LBTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 5SSOPGain Bandwidth Product: 3 MHz Slew Rate: 1.1V/µs Current - Supply: 1.1mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Supplier Device Package: 5-SSOP Voltage - Input Offset: 5 µV Current - Input Bias: 0.5 pA |
Produkt ist nicht verfügbar |
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LMR1802G-LBTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 5SSOPVoltage - Input Offset: 5 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 3 MHz Slew Rate: 1.1V/µs Current - Supply: 1.1mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Supplier Device Package: 5-SSOP |
auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BGE-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
Produkt ist nicht verfügbar |
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RB095BGE-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
auf Bestellung 2393 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BGE-40TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BGE-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 6A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BGE-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 6A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
auf Bestellung 4798 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTV00TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 95A TO247NPower - Max: 276 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 95 A Gate Charge: 104 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.17mJ (on), 940µJ (off) Td (on/off) @ 25°C: 41ns/142ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 102 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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RGTV60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 60A TO247NPower - Max: 194 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 64 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 570µJ (on), 500µJ (off) Td (on/off) @ 25°C: 33ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Reverse Recovery Time (trr): 95 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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RGTV60TS65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 60A TO-247NPower - Max: 194 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 64 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 570µJ (on), 500µJ (off) Td (on/off) @ 25°C: 33ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 45A TO-3PFMOperating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 89 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 45 A Part Status: Active Gate Charge: 141 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.18mJ (on), 960µJ (off) Td (on/off) @ 25°C: 52ns/180ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 95 ns Input Type: Standard |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 45A TO3PFMPower - Max: 89 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 45 A Part Status: Active Gate Charge: 141 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.18mJ (on), 960µJ (off) Td (on/off) @ 25°C: 52ns/180ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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RGW00TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N |
Produkt ist nicht verfügbar |
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RGW00TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N |
auf Bestellung 439 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 60A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 60A TO247NPower - Max: 178 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 84 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 480µJ (on), 490µJ (off) Td (on/off) @ 25°C: 37ns/114ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 420 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 39A TO3PFMPower - Max: 81 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Part Status: Active Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Reverse Recovery Time (trr): 92 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFMPower - Max: 81 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Part Status: Active Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 78A TO247NPower - Max: 214 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 78 A Part Status: Not For New Designs Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Reverse Recovery Time (trr): 92 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 78A TO247NPower - Max: 214 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 78 A Part Status: Not For New Designs Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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BH1726NUC-E2 | Rohm Semiconductor |
Description: SENSOR OPT AMBIENT 8 UFDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Supplier Device Package: WSON008X2120 Proximity Detection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BU52792GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARTest Condition: 25°C Current - Supply (Max): 6µA Current - Output (Max): 500µA Sensing Range: ±3.2mT Trip, ±1.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C Function: Omnipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: CMOS Package / Case: 4-XFBGA, CSPBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BH1726NUC-E2 | Rohm Semiconductor |
Description: SENSOR OPT AMBIENT 8 UFDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Supplier Device Package: WSON008X2120 Proximity Detection: No Part Status: Active |
auf Bestellung 5455 Stücke: Lieferzeit 10-14 Tag (e) |
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BU52792GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARTest Condition: 25°C Current - Supply (Max): 6µA Current - Output (Max): 500µA Sensing Range: ±3.2mT Trip, ±1.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C Function: Omnipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: CMOS Package / Case: 4-XFBGA, CSPBGA Packaging: Cut Tape (CT) |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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ROHM-STEPMO_EVK_206 | Rohm Semiconductor |
Description: BD63720A STEPMOTOR DRVR SHIELDPackaging: Box Function: Motor Controller/Driver, Stepper Type: Power Management Contents: Board(s) Utilized IC / Part: BD63720A Platform: Arduino Part Status: Active |
Produkt ist nicht verfügbar |
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SCS230KE2AHRC | Rohm Semiconductor | Description: DIODE ARRAY SCHOTTKY 1200V TO247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SCS240KE2AHRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 1200V 20A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCS310AMC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO220FMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS312AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS315AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 15A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS320AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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R6003KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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R6003KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 3A TO252Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2088U3T106 | Rohm Semiconductor |
Description: TRANS PNP 60V 0.5A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 400MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA113ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA115EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| UDZVFHTE-1730B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 29.94V 200MW UMD2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 29.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 29.94V 200MW UMD2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 29.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 95+ | 0.19 EUR |
| 215+ | 0.082 EUR |
| 500+ | 0.081 EUR |
| 1000+ | 0.079 EUR |
| UDZVFHTE-174.7B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.65V 200MW UMD2
Description: DIODE ZENER 4.65V 200MW UMD2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UDZVFHTE-175.6B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.61V 200MW UMD2
Description: DIODE ZENER 5.61V 200MW UMD2
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UDZVFHTE-176.8B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.79V 200MW UMD2
Description: DIODE ZENER 6.79V 200MW UMD2
auf Bestellung 9005 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BA82904YF-CE2 |
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Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Description: IC OPAMP GP 2 CIRCUIT 8SOP
auf Bestellung 2314 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BD63573NUV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSON
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VSON010V3030
Voltage - Load: 2V ~ 16V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -30°C ~ 85°C
Interface: Logic
Current - Output: 1.2A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSON
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VSON010V3030
Voltage - Load: 2V ~ 16V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -30°C ~ 85°C
Interface: Logic
Current - Output: 1.2A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.28 EUR |
| CDZFHT2RA36B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36.97V 100MW VMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 100 mW
Grade: Automotive
Supplier Device Package: VMN2 (SOD-923)
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36.97 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Description: DIODE ZENER 36.97V 100MW VMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 100 mW
Grade: Automotive
Supplier Device Package: VMN2 (SOD-923)
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36.97 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSL0601RGBU1 |
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Hersteller: Rohm Semiconductor
Description: LED RGB SIDE SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
Description: LED RGB SIDE SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.88 EUR |
| 6000+ | 0.84 EUR |
| SML-D12D8WT86C |
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Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| SML-D13WWT86C |
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Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD63573NUV-E2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSON
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VSON010V3030
Voltage - Load: 2V ~ 16V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -30°C ~ 85°C
Interface: Logic
Current - Output: 1.2A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MOTOR DRIVER 2.5V-5.5V 10VSON
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VSON010V3030
Voltage - Load: 2V ~ 16V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -30°C ~ 85°C
Interface: Logic
Current - Output: 1.2A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5871 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 1.89 EUR |
| 25+ | 1.72 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.44 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.34 EUR |
| CDZFHT2RA36B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36.97V 100MW VMN2
Grade: Automotive
Supplier Device Package: VMN2 (SOD-923)
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36.97 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 100 mW
Description: DIODE ZENER 36.97V 100MW VMN2
Grade: Automotive
Supplier Device Package: VMN2 (SOD-923)
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36.97 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 100 mW
auf Bestellung 7421 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.18 EUR |
| MSL0601RGBU1 |
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Hersteller: Rohm Semiconductor
Description: LED RGB SIDE SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
Description: LED RGB SIDE SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
auf Bestellung 8573 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.22 EUR |
| 12+ | 1.57 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.95 EUR |
| SML-D12D8WT86C |
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Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
auf Bestellung 4381 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 79+ | 0.22 EUR |
| 113+ | 0.16 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| SML-D13WWT86C |
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Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
auf Bestellung 1570 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| BAS116HMFHT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.053 EUR |
| BAV199HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV70HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV99HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY GP 80V 215MA SSD3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.053 EUR |
| BAS116HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3567 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 96+ | 0.18 EUR |
| 155+ | 0.11 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.073 EUR |
| BAV199HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV99HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 93+ | 0.19 EUR |
| 150+ | 0.12 EUR |
| 500+ | 0.086 EUR |
| LMR1802G-LBTR |
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Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Description: IC CMOS 1 CIRCUIT 5SSOP
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LMR1802G-LBTR |
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Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Description: IC CMOS 1 CIRCUIT 5SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.44 EUR |
| 10+ | 7.58 EUR |
| 25+ | 6.58 EUR |
| 100+ | 5.44 EUR |
| 250+ | 4.88 EUR |
| 500+ | 4.56 EUR |
| RB095BGE-30TL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB095BGE-30TL |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 2393 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 12+ | 1.49 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.8 EUR |
| RB095BGE-40TL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.58 EUR |
| 14+ | 1.29 EUR |
| 100+ | 1 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.69 EUR |
| RB095BGE-60TL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.34 EUR |
| 100+ | 0.99 EUR |
| RB095BGE-90TL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
auf Bestellung 4798 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
| RGTV00TS65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 95A TO247N
Power - Max: 276 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 102 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 95A TO247N
Power - Max: 276 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 102 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGTV60TS65DGC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGTV60TS65GC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 60A TO-247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 30+ | 2.56 EUR |
| 120+ | 2.08 EUR |
| RGW00TK65DGVC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.75 EUR |
| 30+ | 6.04 EUR |
| RGW00TK65GVC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGW00TS65DGC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Description: IGBT TRNCH FIELD 650V 96A TO247N
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGW00TS65GC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Description: IGBT TRNCH FIELD 650V 96A TO247N
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.07 EUR |
| 10+ | 9.04 EUR |
| 100+ | 7.4 EUR |
| RGW60TS65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.5 EUR |
| 30+ | 4.81 EUR |
| 120+ | 3.99 EUR |
| RGW60TS65GC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 84 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 480µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 37ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 84 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 480µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 37ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.55 EUR |
| 30+ | 3.71 EUR |
| 120+ | 3.58 EUR |
| RGW80TK65DGVC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.13 EUR |
| 30+ | 5.69 EUR |
| 120+ | 5.27 EUR |
| RGW80TK65GVC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.09 EUR |
| 30+ | 3.33 EUR |
| 120+ | 2.71 EUR |
| RGW80TS65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.25 EUR |
| 30+ | 6.47 EUR |
| 120+ | 5.41 EUR |
| RGW80TS65GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.92 EUR |
| 30+ | 3.92 EUR |
| 120+ | 3.84 EUR |
| BH1726NUC-E2 |
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Hersteller: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU52792GWZ-E2 |
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Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BH1726NUC-E2 |
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Hersteller: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
auf Bestellung 5455 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.95 EUR |
| 10+ | 2.81 EUR |
| 25+ | 2.65 EUR |
| 50+ | 2.54 EUR |
| 100+ | 2.44 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.15 EUR |
| BU52792GWZ-E2 |
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Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 26+ | 0.69 EUR |
| 27+ | 0.65 EUR |
| 29+ | 0.61 EUR |
| 50+ | 0.58 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| ROHM-STEPMO_EVK_206 |
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Hersteller: Rohm Semiconductor
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCS230KE2AHRC |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCS240KE2AHRC |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCS310AMC |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.27 EUR |
| 50+ | 6.6 EUR |
| 100+ | 6.05 EUR |
| SCS312AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.15 EUR |
| SCS315AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.01 EUR |
| 50+ | 10.37 EUR |
| 100+ | 9.28 EUR |
| SCS320AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R6003KND3TL1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R6003KND3TL1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.03 EUR |
| 10+ | 2.59 EUR |
| 2SA2088U3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| DTA113ZU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
| DTA115EU3T106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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