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RGT40NS65DGC9 RGT40NS65DGC9 Rohm Semiconductor datasheet?p=RGT40NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 1000 Stücke:
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RGT40TM65DGC9 RGT40TM65DGC9 Rohm Semiconductor datasheet?p=RGT40TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
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50+4.21 EUR
100+3.82 EUR
500+3.14 EUR
1000+2.92 EUR
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RGT50NS65DGC9 RGT50NS65DGC9 Rohm Semiconductor datasheet?p=RGT50NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
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RGT50TM65DGC9 RGT50TM65DGC9 Rohm Semiconductor datasheet?p=RGT50TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
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RGT8NS65DGC9 RGT8NS65DGC9 Rohm Semiconductor datasheet?p=RGT8NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
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50+1.3 EUR
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500+0.9 EUR
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RGT8TM65DGC9 RGT8TM65DGC9 Rohm Semiconductor datasheet?p=RGT8TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
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RGTH00TK65GC11 RGTH00TK65GC11 Rohm Semiconductor datasheet?p=RGTH00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
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RGTH60TK65DGC11 RGTH60TK65DGC11 Rohm Semiconductor datasheet?p=RGTH60TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
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RGTH60TK65GC11 RGTH60TK65GC11 Rohm Semiconductor datasheet?p=RGTH60TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 307 Stücke:
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RGTH80TK65DGC11 RGTH80TK65DGC11 Rohm Semiconductor datasheet?p=RGTH80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
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RGTVX6TS65DGC11 RGTVX6TS65DGC11 Rohm Semiconductor datasheet?p=RGTVX6TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 387 Stücke:
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BZX84C3V9LT116 BZX84C3V9LT116 Rohm Semiconductor datasheet?p=BZX84C3V9L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84C3V9LT116 BZX84C3V9LT116 Rohm Semiconductor datasheet?p=BZX84C3V9L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX84C5V6LT116 BZX84C5V6LT116 Rohm Semiconductor datasheet?p=BZX84C5V6L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
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BZX84C5V6LT116 BZX84C5V6LT116 Rohm Semiconductor datasheet?p=BZX84C5V6L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 2988 Stücke:
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150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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RGT16BM65DTL RGT16BM65DTL Rohm Semiconductor datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
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RGT16BM65DTL RGT16BM65DTL Rohm Semiconductor datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
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500+1.99 EUR
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RGT16NL65DGTL RGT16NL65DGTL Rohm Semiconductor datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
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RGT16NL65DGTL RGT16NL65DGTL Rohm Semiconductor datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 989 Stücke:
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10+3.93 EUR
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500+2.23 EUR
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RGT30NL65DGTL RGT30NL65DGTL Rohm Semiconductor datasheet?p=RGT30NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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RGT30NL65DGTL RGT30NL65DGTL Rohm Semiconductor datasheet?p=RGT30NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
Produkt ist nicht verfügbar
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RGT40NL65DGTL RGT40NL65DGTL Rohm Semiconductor datasheet?p=RGT40NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Produkt ist nicht verfügbar
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RGT40NL65DGTL RGT40NL65DGTL Rohm Semiconductor datasheet?p=RGT40NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
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RGT50NL65DGTL RGT50NL65DGTL Rohm Semiconductor datasheet?p=RGT50NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
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RGT50NL65DGTL RGT50NL65DGTL Rohm Semiconductor datasheet?p=RGT50NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
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RGT8NL65DGTL RGT8NL65DGTL Rohm Semiconductor datasheet?p=RGT8NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
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RGT8NL65DGTL RGT8NL65DGTL Rohm Semiconductor datasheet?p=RGT8NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
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RRD07MM4STR RRD07MM4STR Rohm Semiconductor datasheet?p=RRD07MM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 400V 700MA PMDU
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RRD07MM4STR RRD07MM4STR Rohm Semiconductor datasheet?p=RRD07MM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 400V 700MA PMDU
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BM2P0161-EVK-001 BM2P0161-EVK-001 Rohm Semiconductor bm2p0x61-z-e Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
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BM2P0161-EVK-002 BM2P0161-EVK-002 Rohm Semiconductor bm2p0161-evk-002_ug-e.pdf Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
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BM2P0161-EVK-003 BM2P0161-EVK-003 Rohm Semiconductor bm2p0161-evk-003_ug-e.pdf Description: EVAL BOARD FOR BM2P0161
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BD62120AEFJ-E2 BD62120AEFJ-E2 Rohm Semiconductor datasheet?p=BD62120AEFJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
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BD63130AFM-E2 BD63130AFM-E2 Rohm Semiconductor datasheet?p=BD63130AFM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
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BD63565EFV-E2 BD63565EFV-E2 Rohm Semiconductor datasheet?p=BD63565EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
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EM6K7T2CR EM6K7T2CR Rohm Semiconductor em6k7-e Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
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QH8K51TR QH8K51TR Rohm Semiconductor datasheet?p=QH8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
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RD3P08BBDTL RD3P08BBDTL Rohm Semiconductor datasheet?p=RD3P08BBD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RF4C100BCTCR RF4C100BCTCR Rohm Semiconductor datasheet?p=RF4C100BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
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RF4E060AJTCR RF4E060AJTCR Rohm Semiconductor datasheet?p=RF4E060AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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RF6E065BNTCR RF6E065BNTCR Rohm Semiconductor datasheet?p=RF6E065BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 6.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RJ1P12BBDTLL RJ1P12BBDTLL Rohm Semiconductor datasheet?p=RJ1P12BBD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 120A LPTL
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: LPTL
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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100+6.21 EUR
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RQ1E075XNTCR RQ1E075XNTCR Rohm Semiconductor datasheet?p=RQ1E075XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
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RQ5E020SPTL RQ5E020SPTL Rohm Semiconductor datasheet?p=RQ5E020SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RQ5E025SNTL RQ5E025SNTL Rohm Semiconductor datasheet?p=RQ5E025SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RQ5E025SPTL RQ5E025SPTL Rohm Semiconductor datasheet?p=RQ5E025SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RQ5E035XNTCL RQ5E035XNTCL Rohm Semiconductor datasheet?p=RQ5E035XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RQ5E040RPTL RQ5E040RPTL Rohm Semiconductor datasheet?p=RQ5E040RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
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RQ5E050ATTCL RQ5E050ATTCL Rohm Semiconductor datasheet?p=RQ5E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
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RQ5E065AJTCL RQ5E065AJTCL Rohm Semiconductor datasheet?p=RQ5E065AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 6.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
auf Bestellung 6163 Stücke:
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RQ5L030SNTL RQ5L030SNTL Rohm Semiconductor datasheet?p=RQ5L030SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
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RQ5L035GNTCL RQ5L035GNTCL Rohm Semiconductor datasheet?p=RQ5L035GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
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RQ6A050ZPTR RQ6A050ZPTR Rohm Semiconductor datasheet?p=RQ6A050ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 4938 Stücke:
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RQ6E040XNTCR RQ6E040XNTCR Rohm Semiconductor datasheet?p=RQ6E040XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2789 Stücke:
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RQ6E045TNTR RQ6E045TNTR Rohm Semiconductor datasheet?p=RQ6E045TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
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RQ6E050AJTCR RQ6E050AJTCR Rohm Semiconductor datasheet?p=RQ6E050AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 5A TSMT6
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
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RS1E301GNTB1 RS1E301GNTB1 Rohm Semiconductor datasheet?p=RS1E301GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 30A/80A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 2379 Stücke:
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RS1L120GNTB RS1L120GNTB Rohm Semiconductor rs1l120gntb-e Description: RS1L120GN IS LOW ON - RESISTANCE
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RS1L180GNTB RS1L180GNTB Rohm Semiconductor rs1l180gntb-e.pdf Description: MOSFET N-CH 60V 18A/68A 8HSOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RS3L045GNGZETB RS3L045GNGZETB Rohm Semiconductor rs3l045gngzetb-e.pdf Description: MOSFET N-CH 60V 4.5A 8SOP
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RGT40NS65DGC9 datasheet?p=RGT40NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40NS65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 1000 Stücke:
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RGT40TM65DGC9 datasheet?p=RGT40TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40TM65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
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RGT50NS65DGC9 datasheet?p=RGT50NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT50NS65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
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RGT50TM65DGC9 datasheet?p=RGT50TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT50TM65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
auf Bestellung 864 Stücke:
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RGT8NS65DGC9 datasheet?p=RGT8NS65D(TO-262)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT8NS65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
auf Bestellung 962 Stücke:
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8+2.75 EUR
50+1.3 EUR
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RGT8TM65DGC9 datasheet?p=RGT8TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT8TM65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
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50+2.7 EUR
100+2.44 EUR
500+1.96 EUR
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RGTH00TK65GC11 datasheet?p=RGTH00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH00TK65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
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RGTH60TK65DGC11 datasheet?p=RGTH60TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH60TK65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
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RGTH60TK65GC11 datasheet?p=RGTH60TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH60TK65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 307 Stücke:
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RGTH80TK65DGC11 datasheet?p=RGTH80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH80TK65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
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RGTVX6TS65DGC11 datasheet?p=RGTVX6TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTVX6TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 387 Stücke:
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2+16.71 EUR
10+11.96 EUR
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BZX84C3V9LT116 datasheet?p=BZX84C3V9L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84C3V9LT116 datasheet?p=BZX84C3V9L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX84C5V6LT116 datasheet?p=BZX84C5V6L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C5V6LT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
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BZX84C5V6LT116 datasheet?p=BZX84C5V6L&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C5V6LT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 2988 Stücke:
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56+0.38 EUR
93+0.23 EUR
150+0.14 EUR
500+0.1 EUR
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RGT16BM65DTL datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT16BM65DTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
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2500+1.68 EUR
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RGT16BM65DTL datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT16BM65DTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
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RGT16NL65DGTL datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT16NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
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RGT16NL65DGTL datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT16NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 989 Stücke:
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100+2.74 EUR
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RGT30NL65DGTL datasheet?p=RGT30NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT30NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RGT30NL65DGTL datasheet?p=RGT30NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT30NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
Produkt ist nicht verfügbar
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RGT40NL65DGTL datasheet?p=RGT40NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Produkt ist nicht verfügbar
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RGT40NL65DGTL datasheet?p=RGT40NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 1962 Stücke:
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3+7.44 EUR
10+4.89 EUR
100+3.44 EUR
500+3.13 EUR
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RGT50NL65DGTL datasheet?p=RGT50NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT50NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1000 Stücke:
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1000+2.86 EUR
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RGT50NL65DGTL datasheet?p=RGT50NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT50NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1357 Stücke:
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3+7.96 EUR
10+5.26 EUR
100+3.72 EUR
500+3.44 EUR
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RGT8NL65DGTL datasheet?p=RGT8NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT8NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Produkt ist nicht verfügbar
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RGT8NL65DGTL datasheet?p=RGT8NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT8NL65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
auf Bestellung 972 Stücke:
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5+5.09 EUR
10+3.3 EUR
100+2.27 EUR
500+1.88 EUR
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RRD07MM4STR datasheet?p=RRD07MM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRD07MM4STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
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3000+0.24 EUR
6000+0.21 EUR
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RRD07MM4STR datasheet?p=RRD07MM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRD07MM4STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
auf Bestellung 7890 Stücke:
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20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.29 EUR
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BM2P0161-EVK-001 bm2p0x61-z-e
BM2P0161-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
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1+210.9 EUR
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BM2P0161-EVK-002 bm2p0161-evk-002_ug-e.pdf
BM2P0161-EVK-002
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
auf Bestellung 2 Stücke:
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1+210.9 EUR
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BM2P0161-EVK-003 bm2p0161-evk-003_ug-e.pdf
BM2P0161-EVK-003
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
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BD62120AEFJ-E2 datasheet?p=BD62120AEFJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD62120AEFJ-E2
Hersteller: Rohm Semiconductor
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 33363 Stücke:
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5+4.25 EUR
10+3.15 EUR
25+2.88 EUR
100+2.57 EUR
250+2.43 EUR
500+2.36 EUR
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BD63130AFM-E2 datasheet?p=BD63130AFM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD63130AFM-E2
Hersteller: Rohm Semiconductor
Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
auf Bestellung 5102 Stücke:
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3+8.79 EUR
10+6.7 EUR
25+6.18 EUR
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250+5.33 EUR
500+5.16 EUR
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BD63565EFV-E2 datasheet?p=BD63565EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD63565EFV-E2
Hersteller: Rohm Semiconductor
Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
auf Bestellung 2101 Stücke:
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5+4.93 EUR
10+3.67 EUR
25+3.36 EUR
100+3.01 EUR
250+2.86 EUR
500+2.75 EUR
1000+2.67 EUR
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EM6K7T2CR em6k7-e
EM6K7T2CR
Hersteller: Rohm Semiconductor
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
auf Bestellung 7962 Stücke:
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QH8K51TR datasheet?p=QH8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8K51TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2536 Stücke:
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7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.04 EUR
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RD3P08BBDTL datasheet?p=RD3P08BBD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P08BBDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9836 Stücke:
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4+5.82 EUR
10+4.84 EUR
100+3.86 EUR
500+3.26 EUR
1000+2.77 EUR
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RF4C100BCTCR datasheet?p=RF4C100BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4C100BCTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 618 Stücke:
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9+2.43 EUR
14+1.52 EUR
100+1.01 EUR
500+0.79 EUR
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RF4E060AJTCR datasheet?p=RF4E060AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E060AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 9 Stücke:
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RF6E065BNTCR datasheet?p=RF6E065BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF6E065BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8968 Stücke:
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AnzahlPrivatkunde
15+1.43 EUR
18+1.2 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
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RJ1P12BBDTLL datasheet?p=RJ1P12BBD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RJ1P12BBDTLL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 120A LPTL
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: LPTL
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
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3+9.67 EUR
10+7.44 EUR
100+6.21 EUR
500+5.39 EUR
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RQ1E075XNTCR datasheet?p=RQ1E075XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1E075XNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
auf Bestellung 26828 Stücke:
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14+1.52 EUR
16+1.32 EUR
100+0.92 EUR
500+0.76 EUR
1000+0.65 EUR
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RQ5E020SPTL datasheet?p=RQ5E020SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E020SPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
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AnzahlPrivatkunde
13+1.7 EUR
20+1.05 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.46 EUR
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RQ5E025SNTL datasheet?p=RQ5E025SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E025SNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
23+0.94 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.43 EUR
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RQ5E025SPTL datasheet?p=RQ5E025SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E025SPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 2534 Stücke:
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AnzahlPrivatkunde
13+1.62 EUR
21+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
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RQ5E035XNTCL datasheet?p=RQ5E035XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E035XNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 5951 Stücke:
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AnzahlPrivatkunde
15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
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RQ5E040RPTL datasheet?p=RQ5E040RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E040RPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
auf Bestellung 1370 Stücke:
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AnzahlPrivatkunde
12+1.84 EUR
19+1.15 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
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RQ5E050ATTCL datasheet?p=RQ5E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E050ATTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
auf Bestellung 11580 Stücke:
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AnzahlPrivatkunde
11+1.9 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
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RQ5E065AJTCL datasheet?p=RQ5E065AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E065AJTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
auf Bestellung 6163 Stücke:
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11+2.03 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
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RQ5L030SNTL datasheet?p=RQ5L030SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5L030SNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
auf Bestellung 9744 Stücke:
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12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.6 EUR
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RQ5L035GNTCL datasheet?p=RQ5L035GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5L035GNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
auf Bestellung 3254 Stücke:
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10+2.09 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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RQ6A050ZPTR datasheet?p=RQ6A050ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6A050ZPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 4938 Stücke:
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8+2.67 EUR
13+1.69 EUR
100+1.12 EUR
500+0.87 EUR
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RQ6E040XNTCR datasheet?p=RQ6E040XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E040XNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2789 Stücke:
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16+1.38 EUR
22+0.98 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
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RQ6E045TNTR datasheet?p=RQ6E045TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045TNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
auf Bestellung 1560 Stücke:
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AnzahlPrivatkunde
18+1.18 EUR
23+0.92 EUR
100+0.71 EUR
500+0.58 EUR
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RQ6E050AJTCR datasheet?p=RQ6E050AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E050AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 5A TSMT6
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
auf Bestellung 1896 Stücke:
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12+1.84 EUR
18+1.17 EUR
100+0.77 EUR
500+0.6 EUR
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RS1E301GNTB1 datasheet?p=RS1E301GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E301GNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 30A/80A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 2379 Stücke:
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5+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.82 EUR
1000+1.7 EUR
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RS1L120GNTB rs1l120gntb-e
RS1L120GNTB
Hersteller: Rohm Semiconductor
Description: RS1L120GN IS LOW ON - RESISTANCE
auf Bestellung 2415 Stücke:
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RS1L180GNTB rs1l180gntb-e.pdf
RS1L180GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 18A/68A 8HSOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RS3L045GNGZETB rs3l045gngzetb-e.pdf
RS3L045GNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 4.5A 8SOP
auf Bestellung 2240 Stücke:
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