Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (105883) > Seite 798 nach 1765

Wählen Sie Seite:   [  << Vorherige Seite ]  1 176 352 528 704 793 794 795 796 797 798 799 800 801 802 803 880 1056 1232 1408 1584 1760 1765  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BU52271NUZ-ZE2 BU52271NUZ-ZE2 Rohm Semiconductor bu52271nuz-e.pdf Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 8µA
Current - Output (Max): 500µA
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.44 EUR
10000+0.43 EUR
15000+0.42 EUR
25000+0.4 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS5130AHZGT116 BSS5130AHZGT116 Rohm Semiconductor datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD93W21F-E2 BD93W21F-E2 Rohm Semiconductor bd93w21f-e.pdf Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS4130AHZGT116 BSS4130AHZGT116 Rohm Semiconductor datasheet?p=BSS4130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS5130AHZGT116 BSS5130AHZGT116 Rohm Semiconductor datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU21182FS-E2 BU21182FS-E2 Rohm Semiconductor bu21182fs-e.pdf Description: BU21182FS IS A CAPACITIVE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 20
Supplier Device Package: 32-SSOP-A
Proximity Detection: No
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.4 EUR
10+6.38 EUR
25+5.88 EUR
100+5.32 EUR
250+5.06 EUR
500+4.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU52271NUZ-ZE2 BU52271NUZ-ZE2 Rohm Semiconductor bu52271nuz-e.pdf Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 8µA
Current - Output (Max): 500µA
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 52662 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
22+0.96 EUR
23+0.92 EUR
25+0.86 EUR
50+0.81 EUR
100+0.77 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD93W21F-E2 BD93W21F-E2 Rohm Semiconductor bd93w21f-e.pdf Description: BD93W21F IS A USB TYPE-C POWER D
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 16-SOP
Standards: USB 3.0
Protocol: USB
Current - Supply: 3.2mA
Voltage - Supply: 4.75V ~ 20V
Operating Temperature: -30°C ~ 105°C
Function: Controller
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS63AHZGT116 BSS63AHZGT116 Rohm Semiconductor datasheet?p=BSS63AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS64AHZGT116 BSS64AHZGT116 Rohm Semiconductor datasheet?p=BSS64AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1247 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0161K-Z BM2P0161K-Z Rohm Semiconductor datasheet?p=BM2P0161K-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG FLYBACK 900A 7DIP
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: 7-DIP
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 900µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+3.47 EUR
50+2.68 EUR
100+2.43 EUR
250+2.15 EUR
500+1.99 EUR
1000+1.84 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0151-Z BM2P0151-Z Rohm Semiconductor datasheet?p=BM2P0151-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG FLYBACK 900A 7DIP
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: 7-DIP
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 900µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.77 EUR
10+5.13 EUR
50+4.01 EUR
100+3.67 EUR
250+3.28 EUR
500+3.06 EUR
1000+2.87 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0362-Z BM2P0362-Z Rohm Semiconductor datasheet?p=BM2P0362-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG FLYBACK 650A 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 650µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 7-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 8.9V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
10+2.96 EUR
50+2.55 EUR
100+2.42 EUR
250+2.28 EUR
500+2.2 EUR
1000+2.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0163T-Z BM2P0163T-Z Rohm Semiconductor datasheet?p=BM2P0163T-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG FLYBACK 950A TO220-7M
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: TO-220-7M
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 950µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: TO-220-7 Full Pack, Formed Leads
Packaging: Tube
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+8.33 EUR
34+7.52 EUR
102+7 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LDO7V10V15V-SMPLBK LDO7V10V15V-SMPLBK Rohm Semiconductor Description: KIT LDO SGL 7V 10V 15V 8HTSOP J
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD9329AEFJ_EVK BD9329AEFJ_EVK Rohm Semiconductor BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf Description: EVAL BOARD FOR BD9329A
Contents: Board(s)
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: BD9329A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 380kHz
Current - Output: 3A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ML9272MBZ03A ML9272MBZ03A Rohm Semiconductor Description: IC VFD DRIVER 40 BIT 60SSOP
Supplier Device Package: 60-SSOP
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Display Type: Vacuum Fluorescent (VF)
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Packaging: Tray
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.62 EUR
10+12.59 EUR
25+11.02 EUR
80+9.48 EUR
230+8.44 EUR
440+8.32 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD9110NV-E2 BD9110NV-E2 Rohm Semiconductor datasheet?p=BD9110NV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ045N03HZGTR RTQ045N03HZGTR Rohm Semiconductor datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ020N03HZGTR RSQ020N03HZGTR Rohm Semiconductor rsq020n03hzgtr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035N03HZGTR RTQ035N03HZGTR Rohm Semiconductor datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT6
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.5 EUR
6000+0.49 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025P02HZGTL RTR025P02HZGTL Rohm Semiconductor datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.54 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030P02HZGTL RTR030P02HZGTL Rohm Semiconductor datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR020N06HZGTL RSR020N06HZGTL Rohm Semiconductor rsr020n06hzgtl-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.4 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ035N06HZGTR RSQ035N06HZGTR Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL RSR030N06HZGTL Rohm Semiconductor rsr030n06hzgtl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030N05HZGTL RTR030N05HZGTL Rohm Semiconductor datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N03HZGTL RTR025N03HZGTL Rohm Semiconductor datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020P02HZGTL RTR020P02HZGTL Rohm Semiconductor datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT3
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 700mW (Ta)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.54 EUR
6000+0.49 EUR
9000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RUR040N02HZGTL RUR040N02HZGTL Rohm Semiconductor datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N05HZGTL RTR025N05HZGTL Rohm Semiconductor datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
6000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020N05HZGTL RTR020N05HZGTL Rohm Semiconductor datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ020N05HZGTR RTQ020N05HZGTR Rohm Semiconductor datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT6
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR010N10HZGTL RSR010N10HZGTL Rohm Semiconductor rsr010n10hzgtl-e.pdf Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.56 EUR
9000+0.5 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ015N06HZGTR RSQ015N06HZGTR Rohm Semiconductor rsq015n06hzgtr-e.pdf Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035P02HZGTR RTQ035P02HZGTR Rohm Semiconductor datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ045N03HZGTR RSQ045N03HZGTR Rohm Semiconductor rsq045n03hzgtr-e.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR025N03HZGTL RSR025N03HZGTL Rohm Semiconductor rsr025n03hzgtl-e.pdf Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ035N06HZGTR RSQ035N06HZGTR Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 6234 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.44 EUR
50+1.07 EUR
100+0.95 EUR
500+0.74 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030N05HZGTL RTR030N05HZGTL Rohm Semiconductor datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7623 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
14+1.5 EUR
50+1.12 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ045N03HZGTR RTQ045N03HZGTR Rohm Semiconductor datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
18+1.2 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR010N10HZGTL RSR010N10HZGTL Rohm Semiconductor rsr010n10hzgtl-e.pdf Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16865 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.26 EUR
15+1.42 EUR
50+1.05 EUR
100+0.93 EUR
500+0.71 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ020N03HZGTR RSQ020N03HZGTR Rohm Semiconductor rsq020n03hzgtr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RUR040N02HZGTL RUR040N02HZGTL Rohm Semiconductor datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 5886 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
17+1.26 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.62 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020P02HZGTL RTR020P02HZGTL Rohm Semiconductor datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 13189 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035N03HZGTR RTQ035N03HZGTR Rohm Semiconductor datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.15 EUR
16+1.34 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N05HZGTL RTR025N05HZGTL Rohm Semiconductor datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 7724 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025P02HZGTL RTR025P02HZGTL Rohm Semiconductor datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2.5A TSMT3
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4326 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N03HZGTL RTR025N03HZGTL Rohm Semiconductor datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
auf Bestellung 12104 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.3 EUR
25+0.84 EUR
100+0.61 EUR
500+0.52 EUR
1000+0.45 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020N05HZGTL RTR020N05HZGTL Rohm Semiconductor datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT3
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 5375 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.82 EUR
19+1.14 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030P02HZGTL RTR030P02HZGTL Rohm Semiconductor datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3A TSMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 34µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 1304 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.69 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ045N03HZGTR RSQ045N03HZGTR Rohm Semiconductor rsq045n03hzgtr-e.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.39 EUR
100+0.93 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL RSR030N06HZGTL Rohm Semiconductor rsr030n06hzgtl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
15+1.46 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ015N06HZGTR RSQ015N06HZGTR Rohm Semiconductor rsq015n06hzgtr-e.pdf Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.82 EUR
19+1.13 EUR
50+0.82 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035P02HZGTR RTQ035P02HZGTR Rohm Semiconductor datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2591 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.71 EUR
15+1.49 EUR
100+1.04 EUR
500+0.87 EUR
1000+0.74 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2513 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.05 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR020N06HZGTL RSR020N06HZGTL Rohm Semiconductor rsr020n06hzgtl-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11248 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
20+1.05 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.48 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ020N05HZGTR RTQ020N05HZGTR Rohm Semiconductor datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
20+1.07 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LB-602EA2 LB-602EA2 Rohm Semiconductor datasheet?p=LB-602EA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.18 EUR
10+12.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU52271NUZ-ZE2 bu52271nuz-e.pdf
BU52271NUZ-ZE2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 8µA
Current - Output (Max): 500µA
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.44 EUR
10000+0.43 EUR
15000+0.42 EUR
25000+0.4 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS5130AHZGT116 datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS5130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD93W21F-E2 bd93w21f-e.pdf
BD93W21F-E2
Hersteller: Rohm Semiconductor
Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS4130AHZGT116 datasheet?p=BSS4130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS4130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS5130AHZGT116 datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS5130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU21182FS-E2 bu21182fs-e.pdf
BU21182FS-E2
Hersteller: Rohm Semiconductor
Description: BU21182FS IS A CAPACITIVE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 20
Supplier Device Package: 32-SSOP-A
Proximity Detection: No
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.4 EUR
10+6.38 EUR
25+5.88 EUR
100+5.32 EUR
250+5.06 EUR
500+4.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BU52271NUZ-ZE2 bu52271nuz-e.pdf
BU52271NUZ-ZE2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 8µA
Current - Output (Max): 500µA
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Technology: Hall Effect
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 52662 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
22+0.96 EUR
23+0.92 EUR
25+0.86 EUR
50+0.81 EUR
100+0.77 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD93W21F-E2 bd93w21f-e.pdf
BD93W21F-E2
Hersteller: Rohm Semiconductor
Description: BD93W21F IS A USB TYPE-C POWER D
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 16-SOP
Standards: USB 3.0
Protocol: USB
Current - Supply: 3.2mA
Voltage - Supply: 4.75V ~ 20V
Operating Temperature: -30°C ~ 105°C
Function: Controller
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS63AHZGT116 datasheet?p=BSS63AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS63AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS64AHZGT116 datasheet?p=BSS64AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS64AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0161K-Z datasheet?p=BM2P0161K-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P0161K-Z
Hersteller: Rohm Semiconductor
Description: IC REG FLYBACK 900A 7DIP
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: 7-DIP
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 900µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.37 EUR
10+3.47 EUR
50+2.68 EUR
100+2.43 EUR
250+2.15 EUR
500+1.99 EUR
1000+1.84 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0151-Z datasheet?p=BM2P0151-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P0151-Z
Hersteller: Rohm Semiconductor
Description: IC REG FLYBACK 900A 7DIP
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: 7-DIP
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 900µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.77 EUR
10+5.13 EUR
50+4.01 EUR
100+3.67 EUR
250+3.28 EUR
500+3.06 EUR
1000+2.87 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0362-Z datasheet?p=BM2P0362-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P0362-Z
Hersteller: Rohm Semiconductor
Description: IC REG FLYBACK 650A 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 650µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 7-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 8.9V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.96 EUR
50+2.55 EUR
100+2.42 EUR
250+2.28 EUR
500+2.2 EUR
1000+2.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BM2P0163T-Z datasheet?p=BM2P0163T-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P0163T-Z
Hersteller: Rohm Semiconductor
Description: IC REG FLYBACK 950A TO220-7M
Voltage - Input (Min): 8.9V
Synchronous Rectifier: No
Supplier Device Package: TO-220-7M
Topology: Flyback
Voltage - Input (Max): 26V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 950µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: TO-220-7 Full Pack, Formed Leads
Packaging: Tube
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+8.33 EUR
34+7.52 EUR
102+7 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LDO7V10V15V-SMPLBK
LDO7V10V15V-SMPLBK
Hersteller: Rohm Semiconductor
Description: KIT LDO SGL 7V 10V 15V 8HTSOP J
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD9329AEFJ_EVK BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf
BD9329AEFJ_EVK
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD9329A
Contents: Board(s)
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: BD9329A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 380kHz
Current - Output: 3A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ML9272MBZ03A
ML9272MBZ03A
Hersteller: Rohm Semiconductor
Description: IC VFD DRIVER 40 BIT 60SSOP
Supplier Device Package: 60-SSOP
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Display Type: Vacuum Fluorescent (VF)
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Packaging: Tray
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.62 EUR
10+12.59 EUR
25+11.02 EUR
80+9.48 EUR
230+8.44 EUR
440+8.32 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BD9110NV-E2 datasheet?p=BD9110NV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9110NV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ045N03HZGTR datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ020N03HZGTR rsq020n03hzgtr-e.pdf
RSQ020N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035N03HZGTR datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.5 EUR
6000+0.49 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025P02HZGTL datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.54 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030P02HZGTL datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR020N06HZGTL rsr020n06hzgtl-e.pdf
RSR020N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.4 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ035N06HZGTR rsq035n06hzgtr-e.pdf
RSQ035N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL rsr030n06hzgtl-e.pdf
RSR030N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030N05HZGTL datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N03HZGTL datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020P02HZGTL datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 700mW (Ta)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.54 EUR
6000+0.49 EUR
9000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RUR040N02HZGTL datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR040N02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N05HZGTL datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
6000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020N05HZGTL datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ020N05HZGTR datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N05HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR010N10HZGTL rsr010n10hzgtl-e.pdf
RSR010N10HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.56 EUR
9000+0.5 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ015N06HZGTR rsq015n06hzgtr-e.pdf
RSQ015N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035P02HZGTR datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035P02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ045N03HZGTR rsq045n03hzgtr-e.pdf
RSQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR025N03HZGTL rsr025n03hzgtl-e.pdf
RSR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ035N06HZGTR rsq035n06hzgtr-e.pdf
RSQ035N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 6234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.44 EUR
50+1.07 EUR
100+0.95 EUR
500+0.74 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030N05HZGTL datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7623 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.5 EUR
50+1.12 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ045N03HZGTR datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
18+1.2 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR010N10HZGTL rsr010n10hzgtl-e.pdf
RSR010N10HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16865 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.26 EUR
15+1.42 EUR
50+1.05 EUR
100+0.93 EUR
500+0.71 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ020N03HZGTR rsq020n03hzgtr-e.pdf
RSQ020N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RUR040N02HZGTL datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR040N02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 5886 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
17+1.26 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.62 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020P02HZGTL datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 13189 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035N03HZGTR datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.34 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N05HZGTL datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 7724 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025P02HZGTL datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR025N03HZGTL datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
auf Bestellung 12104 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
25+0.84 EUR
100+0.61 EUR
500+0.52 EUR
1000+0.45 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR020N05HZGTL datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 5375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.14 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR030P02HZGTL datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 34µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 1304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.69 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ045N03HZGTR rsq045n03hzgtr-e.pdf
RSQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.39 EUR
100+0.93 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL rsr030n06hzgtl-e.pdf
RSR030N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSQ015N06HZGTR rsq015n06hzgtr-e.pdf
RSQ015N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.13 EUR
50+0.82 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ035P02HZGTR datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035P02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2591 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
15+1.49 EUR
100+1.04 EUR
500+0.87 EUR
1000+0.74 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2513 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RSR020N06HZGTL rsr020n06hzgtl-e.pdf
RSR020N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
20+1.05 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.48 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTQ020N05HZGTR datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N05HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
20+1.07 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LB-602EA2 datasheet?p=LB-602EA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LB-602EA2
Hersteller: Rohm Semiconductor
Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.18 EUR
10+12.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 176 352 528 704 793 794 795 796 797 798 799 800 801 802 803 880 1056 1232 1408 1584 1760 1765  [ Nächste Seite >> ]