Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97682) > Seite 801 nach 1629
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RBE07V20ATE-17 | Rohm Semiconductor | Description: DIODE SCHOTTKY 20V 700MA UMD2 |
auf Bestellung 5570 Stücke: Lieferzeit 10-14 Tag (e) |
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RF01VM2STE-17 | Rohm Semiconductor |
Description: DIODE GEN PURP 250V 100MA UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 250 V |
auf Bestellung 43224 Stücke: Lieferzeit 10-14 Tag (e) |
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RF101L2SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1498 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E075ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 7776 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN6BM2DTL | Rohm Semiconductor | Description: DIODE ARRAY GP 200V 3A TO252 |
auf Bestellung 2467 Stücke: Lieferzeit 10-14 Tag (e) |
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RFNL5BM6STL | Rohm Semiconductor | Description: DIODE GEN PURP 600V 5A TO252 |
auf Bestellung 1764 Stücke: Lieferzeit 10-14 Tag (e) |
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RFU02VSM6STR | Rohm Semiconductor |
Description: DIODE GP 600V 200MA TUMD2SM Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 18237 Stücke: Lieferzeit 10-14 Tag (e) |
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RFUH10NS4STL | Rohm Semiconductor | Description: DIODE GEN PURP 430V 10A LPDS |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN242CST2RA | Rohm Semiconductor | Description: DIODE PIN HF SW 30V 100MA VMN2 |
auf Bestellung 7950 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180AJTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
auf Bestellung 16589 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E040AJTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
auf Bestellung 8578 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ6E055BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 5.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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RR2L4SDDTE25 | Rohm Semiconductor | Description: DIODE GEN PURP 400V 2A PMDS |
auf Bestellung 2155 Stücke: Lieferzeit 10-14 Tag (e) |
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RR2L6SDDTE25 | Rohm Semiconductor | Description: DIODE GEN PURP 600V 2A PMDS |
auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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RRE02VS4SGTR | Rohm Semiconductor | Description: DIODE GEN PURP 400V 200MA TUMD2S |
auf Bestellung 2955 Stücke: Lieferzeit 10-14 Tag (e) |
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RRE02VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SM Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 19331 Stücke: Lieferzeit 10-14 Tag (e) |
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RRE07VSM4STR | Rohm Semiconductor | Description: DIODE GP 400V 700MA TUMD2SM |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E350BNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 35A 8HSOP |
auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
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RS3E075ATTB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP-J Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V |
auf Bestellung 11173 Stücke: Lieferzeit 10-14 Tag (e) |
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RSA30LDDTE25 | Rohm Semiconductor |
Description: TVS DIODE 25.6VWM 41.4VC PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Current - Peak Pulse (10/1000µs): 14.4A (8/20µs) Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: PMDS Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RSB6.8SMT2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM EMD2 |
Produkt ist nicht verfügbar |
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RSH070N05GZETB | Rohm Semiconductor | Description: MOSFET N-CH 45V 7A 8SOP |
Produkt ist nicht verfügbar |
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RSH070P05GZETB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
auf Bestellung 7487 Stücke: Lieferzeit 10-14 Tag (e) |
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RSX201VAM30TR | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 1A TUMD2M |
auf Bestellung 45095 Stücke: Lieferzeit 10-14 Tag (e) |
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RUS100N02TB | Rohm Semiconductor |
Description: MOSFET N-CH 20V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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BA12004BF-E2 | Rohm Semiconductor | Description: TRANS 7NPN DARL 60V 0.5A 16SOP |
auf Bestellung 2344 Stücke: Lieferzeit 10-14 Tag (e) |
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BA2904WF-E2 | Rohm Semiconductor | Description: IC OP AMP GROUND SENSE SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BA3472RFVM-TR | Rohm Semiconductor | Description: IC OP AMP HS HV 8MSOP |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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BD48K38G-TL | Rohm Semiconductor | Description: IC VOLTAGE SUPERVISOR 3SSOP |
Produkt ist nicht verfügbar |
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BD49K26G-TL | Rohm Semiconductor | Description: IC VOLTAGE DETECTOR SSOP3 |
Produkt ist nicht verfügbar |
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BD49K44G-TL | Rohm Semiconductor | Description: IC VOLTAGE DETECTOR SSOP3 |
Produkt ist nicht verfügbar |
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BD63821EFV-E2 | Rohm Semiconductor | Description: IC MOTOR DVR W/BRUSHES 28HTSSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BD6382EFV-E2 | Rohm Semiconductor | Description: IC MOTOR DVR STEPPER 24HTSSOP |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD65499MUV-E2 | Rohm Semiconductor | Description: IC LENS DVR 1-2CH 28VQFN |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BD6962FVM-GTR | Rohm Semiconductor | Description: IC MOTOR DRIVER PWM 8-MSOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD6966NUX-GE2 | Rohm Semiconductor | Description: IC PWM FAN MOTOR DVR 10VSON |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD71L4LHFV-1GTR | Rohm Semiconductor | Description: IC DETECTOR OVER VOLT 5HVSOF |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD7673AG-GTR | Rohm Semiconductor | Description: IC PWM DC/DC CONVERTER 6SSOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD7679G-GTR | Rohm Semiconductor | Description: IC PWM DC/DC CONVERTER 6SSOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BM1P065FJ-E2 | Rohm Semiconductor | Description: IC PWM CTLR AD/DC SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BM1P068FJ-E2 | Rohm Semiconductor | Description: IC PWM CTLR AD/DC SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P051F-GE2 | Rohm Semiconductor | Description: IC CONV DC/DC PWM 650V SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P052F-GE2 | Rohm Semiconductor | Description: IC CONV DC/DC PWM 650V SOP8 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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BM2P053F-GE2 | Rohm Semiconductor | Description: IC CONV DC/DC PWM 650V SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BM5449MWV-E2 | Rohm Semiconductor | Description: IC SPEAKER AMP DGTL DSP 56UQFN |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24A04FJ-WME2 | Rohm Semiconductor | Description: IC EEPROM 4K I2C 400KHZ 8SOPJ |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24T02FJ-WGE2 | Rohm Semiconductor | Description: IC EEPROM 2KBIT 400KHZ SOP8-J |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24T02FVM-WGTR | Rohm Semiconductor | Description: IC EEPROM 2KBIT 400KHZ 8MSOP |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24T02F-WGE2 | Rohm Semiconductor | Description: IC EEPROM 2KBIT 400KHZ SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25G640F-3GE2 | Rohm Semiconductor | Description: IC EEPROM 64K SPI 20MHZ 8SOP |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25G640FVM-3GTR | Rohm Semiconductor | Description: IC EEPROM 64K SPI 20MHZ 8MSOP |
auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25H010F-2CE2 | Rohm Semiconductor | Description: IC EEPROM 1KB SPI BUS SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25H160FJ-WCE2 | Rohm Semiconductor | Description: IC EEPROM 16KB SPI BUS SOP-J8 |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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BR93G86F-3AGTE2 | Rohm Semiconductor | Description: IC EEPROM BUS 16KBIT SOP8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BR93G86FJ-3GTE2 | Rohm Semiconductor | Description: IC EEPROM BUS 16KBIT SOP8J |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BU11TD3WG-GTR | Rohm Semiconductor | Description: IC REG LDO 1.1V 0.2A 5SSOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU13TD3WG-GTR | Rohm Semiconductor | Description: IC REG LDO 1.3V 0.2A 5SSOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU1ATH5WNVX-TL | Rohm Semiconductor | Description: IC REG LDO 1.05V 0.5A 4SSON |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU28UC3WG-TR | Rohm Semiconductor | Description: IC REG LINEAR 2.8V 300MA 5SSOP |
Produkt ist nicht verfügbar |
RBE07V20ATE-17 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
Description: DIODE SCHOTTKY 20V 700MA UMD2
auf Bestellung 5570 Stücke:
Lieferzeit 10-14 Tag (e)RF01VM2STE-17 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
auf Bestellung 43224 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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28+ | 0.63 EUR |
34+ | 0.53 EUR |
100+ | 0.28 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
RF101L2SDDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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24+ | 0.74 EUR |
29+ | 0.63 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
RF4E075ATTCR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 7776 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.52 EUR |
1000+ | 0.44 EUR |
RFN3BM2SFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
10+ | 2.08 EUR |
100+ | 1.62 EUR |
500+ | 1.34 EUR |
1000+ | 1.06 EUR |
RFN6BM2DTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
Description: DIODE ARRAY GP 200V 3A TO252
auf Bestellung 2467 Stücke:
Lieferzeit 10-14 Tag (e)RFNL5BM6STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Description: DIODE GEN PURP 600V 5A TO252
auf Bestellung 1764 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.69 EUR |
12+ | 1.49 EUR |
100+ | 1.14 EUR |
500+ | 0.9 EUR |
1000+ | 0.72 EUR |
RFU02VSM6STR |
Hersteller: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 18237 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
42+ | 0.42 EUR |
100+ | 0.21 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
RFUH10NS4STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
Description: DIODE GEN PURP 430V 10A LPDS
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)RN242CST2RA |
Hersteller: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
Description: DIODE PIN HF SW 30V 100MA VMN2
auf Bestellung 7950 Stücke:
Lieferzeit 10-14 Tag (e)RQ3E180AJTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
auf Bestellung 16589 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.8 EUR |
13+ | 1.47 EUR |
100+ | 1.14 EUR |
500+ | 0.97 EUR |
1000+ | 0.79 EUR |
RQ5E040AJTCL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
auf Bestellung 8578 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
26+ | 0.7 EUR |
100+ | 0.49 EUR |
500+ | 0.38 EUR |
1000+ | 0.31 EUR |
RQ6E055BNTCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
20+ | 0.89 EUR |
100+ | 0.68 EUR |
500+ | 0.54 EUR |
1000+ | 0.43 EUR |
RR2L4SDDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
Description: DIODE GEN PURP 400V 2A PMDS
auf Bestellung 2155 Stücke:
Lieferzeit 10-14 Tag (e)RR2L6SDDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
Description: DIODE GEN PURP 600V 2A PMDS
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)RRE02VS4SGTR |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
Description: DIODE GEN PURP 400V 200MA TUMD2S
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)RRE02VSM4STR |
Hersteller: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 19331 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
35+ | 0.51 EUR |
100+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
RRE07VSM4STR |
Hersteller: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
Description: DIODE GP 400V 700MA TUMD2SM
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)RS1E350BNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
Description: MOSFET N-CH 30V 35A 8HSOP
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.24 EUR |
10+ | 2.9 EUR |
100+ | 2.34 EUR |
500+ | 1.92 EUR |
1000+ | 1.59 EUR |
RS3E075ATTB |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
auf Bestellung 11173 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.6 EUR |
13+ | 1.4 EUR |
100+ | 1.08 EUR |
500+ | 0.85 EUR |
1000+ | 0.68 EUR |
RSA30LDDTE25 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSB6.8SMT2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
Description: TVS DIODE 3.5VWM EMD2
Produkt ist nicht verfügbar
RSH070N05GZETB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Description: MOSFET N-CH 45V 7A 8SOP
Produkt ist nicht verfügbar
RSH070P05GZETB |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
auf Bestellung 7487 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.36 EUR |
10+ | 2.79 EUR |
100+ | 2.22 EUR |
500+ | 1.88 EUR |
1000+ | 1.59 EUR |
RSX201VAM30TR |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
auf Bestellung 45095 Stücke:
Lieferzeit 10-14 Tag (e)RUS100N02TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.33 EUR |
10+ | 2.75 EUR |
100+ | 2.19 EUR |
BA12004BF-E2 |
Hersteller: Rohm Semiconductor
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
auf Bestellung 2344 Stücke:
Lieferzeit 10-14 Tag (e)BA2904WF-E2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE SOP8
Description: IC OP AMP GROUND SENSE SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BA3472RFVM-TR |
Hersteller: Rohm Semiconductor
Description: IC OP AMP HS HV 8MSOP
Description: IC OP AMP HS HV 8MSOP
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)BD48K38G-TL |
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE SUPERVISOR 3SSOP
Description: IC VOLTAGE SUPERVISOR 3SSOP
Produkt ist nicht verfügbar
BD49K26G-TL |
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
Produkt ist nicht verfügbar
BD49K44G-TL |
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
Produkt ist nicht verfügbar
BD63821EFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DVR W/BRUSHES 28HTSSOP
Description: IC MOTOR DVR W/BRUSHES 28HTSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BD6382EFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DVR STEPPER 24HTSSOP
Description: IC MOTOR DVR STEPPER 24HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)BD65499MUV-E2 |
Hersteller: Rohm Semiconductor
Description: IC LENS DVR 1-2CH 28VQFN
Description: IC LENS DVR 1-2CH 28VQFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BD6962FVM-GTR |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER PWM 8-MSOP
Description: IC MOTOR DRIVER PWM 8-MSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BD6966NUX-GE2 |
Hersteller: Rohm Semiconductor
Description: IC PWM FAN MOTOR DVR 10VSON
Description: IC PWM FAN MOTOR DVR 10VSON
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)BD71L4LHFV-1GTR |
Hersteller: Rohm Semiconductor
Description: IC DETECTOR OVER VOLT 5HVSOF
Description: IC DETECTOR OVER VOLT 5HVSOF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BD7673AG-GTR |
Hersteller: Rohm Semiconductor
Description: IC PWM DC/DC CONVERTER 6SSOP
Description: IC PWM DC/DC CONVERTER 6SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BD7679G-GTR |
Hersteller: Rohm Semiconductor
Description: IC PWM DC/DC CONVERTER 6SSOP
Description: IC PWM DC/DC CONVERTER 6SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BM1P065FJ-E2 |
Hersteller: Rohm Semiconductor
Description: IC PWM CTLR AD/DC SOP8
Description: IC PWM CTLR AD/DC SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BM1P068FJ-E2 |
Hersteller: Rohm Semiconductor
Description: IC PWM CTLR AD/DC SOP8
Description: IC PWM CTLR AD/DC SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BM2P051F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CONV DC/DC PWM 650V SOP8
Description: IC CONV DC/DC PWM 650V SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BM2P052F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CONV DC/DC PWM 650V SOP8
Description: IC CONV DC/DC PWM 650V SOP8
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)BM2P053F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CONV DC/DC PWM 650V SOP8
Description: IC CONV DC/DC PWM 650V SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BM5449MWV-E2 |
Hersteller: Rohm Semiconductor
Description: IC SPEAKER AMP DGTL DSP 56UQFN
Description: IC SPEAKER AMP DGTL DSP 56UQFN
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)BR24A04FJ-WME2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4K I2C 400KHZ 8SOPJ
Description: IC EEPROM 4K I2C 400KHZ 8SOPJ
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)BR24T02FJ-WGE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT 400KHZ SOP8-J
Description: IC EEPROM 2KBIT 400KHZ SOP8-J
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)BR24T02FVM-WGTR |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT 400KHZ 8MSOP
Description: IC EEPROM 2KBIT 400KHZ 8MSOP
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)BR24T02F-WGE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT 400KHZ SOP8
Description: IC EEPROM 2KBIT 400KHZ SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BR25G640F-3GE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64K SPI 20MHZ 8SOP
Description: IC EEPROM 64K SPI 20MHZ 8SOP
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)BR25G640FVM-3GTR |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64K SPI 20MHZ 8MSOP
Description: IC EEPROM 64K SPI 20MHZ 8MSOP
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)BR25H010F-2CE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KB SPI BUS SOP8
Description: IC EEPROM 1KB SPI BUS SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BR25H160FJ-WCE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KB SPI BUS SOP-J8
Description: IC EEPROM 16KB SPI BUS SOP-J8
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)BR93G86F-3AGTE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM BUS 16KBIT SOP8
Description: IC EEPROM BUS 16KBIT SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BR93G86FJ-3GTE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM BUS 16KBIT SOP8J
Description: IC EEPROM BUS 16KBIT SOP8J
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)BU11TD3WG-GTR |
Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.1V 0.2A 5SSOP
Description: IC REG LDO 1.1V 0.2A 5SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BU13TD3WG-GTR |
Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.3V 0.2A 5SSOP
Description: IC REG LDO 1.3V 0.2A 5SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)BU1ATH5WNVX-TL |
Hersteller: Rohm Semiconductor
Description: IC REG LDO 1.05V 0.5A 4SSON
Description: IC REG LDO 1.05V 0.5A 4SSON
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)BU28UC3WG-TR |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 5SSOP
Description: IC REG LINEAR 2.8V 300MA 5SSOP
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