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BAS116HMFHT116 BAS116HMFHT116 Rohm Semiconductor datasheet?p=BAS116HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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BAS16HMFHT116 BAS16HMFHT116 Rohm Semiconductor datasheet?p=BAS16HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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93+0.19 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.07 EUR
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BAV199HMFHT116 BAV199HMFHT116 Rohm Semiconductor datasheet?p=BAV199HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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BAV99HMFHT116 BAV99HMFHT116 Rohm Semiconductor datasheet?p=BAV99HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
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LMR1802G-LBTR LMR1802G-LBTR Rohm Semiconductor datasheet?p=LMR1802G-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR1802G-LBTR LMR1802G-LBTR Rohm Semiconductor datasheet?p=LMR1802G-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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RB095BGE-30TL RB095BGE-30TL Rohm Semiconductor datasheet?p=RB095BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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RB095BGE-30TL RB095BGE-30TL Rohm Semiconductor datasheet?p=RB095BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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RB095BGE-40TL RB095BGE-40TL Rohm Semiconductor datasheet?p=RB095BGE-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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RB095BGE-60TL RB095BGE-60TL Rohm Semiconductor datasheet?p=RB095BGE-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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RB095BGE-90TL RB095BGE-90TL Rohm Semiconductor datasheet?p=RB095BGE-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 90V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
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RGTV00TS65DGC11 RGTV00TS65DGC11 Rohm Semiconductor datasheet?p=RGTV00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 276 W
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RGTV60TS65DGC11 RGTV60TS65DGC11 Rohm Semiconductor datasheet?p=RGTV60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
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RGTV60TS65GC11 RGTV60TS65GC11 Rohm Semiconductor datasheet?p=RGTV60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
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RGW00TK65DGVC11 RGW00TK65DGVC11 Rohm Semiconductor datasheet?p=RGW00TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
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RGW00TK65GVC11 RGW00TK65GVC11 Rohm Semiconductor datasheet?p=RGW00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
Produkt ist nicht verfügbar
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RGW00TS65DGC11 RGW00TS65DGC11 Rohm Semiconductor rgw00ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 96A TO247N
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RGW00TS65GC11 RGW00TS65GC11 Rohm Semiconductor rgw00ts65-e.pdf Description: IGBT TRNCH FIELD 650V 96A TO247N
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RGW60TS65DGC11 RGW60TS65DGC11 Rohm Semiconductor datasheet?p=RGW60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
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RGW60TS65GC11 RGW60TS65GC11 Rohm Semiconductor datasheet?p=RGW60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
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RGW80TK65DGVC11 RGW80TK65DGVC11 Rohm Semiconductor datasheet?p=RGW80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
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RGW80TK65GVC11 RGW80TK65GVC11 Rohm Semiconductor datasheet?p=RGW80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
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RGW80TS65DGC11 RGW80TS65DGC11 Rohm Semiconductor datasheet?p=RGW80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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RGW80TS65GC11 RGW80TS65GC11 Rohm Semiconductor datasheet?p=RGW80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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BH1726NUC-E2 BH1726NUC-E2 Rohm Semiconductor datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
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BU52792GWZ-E2 BU52792GWZ-E2 Rohm Semiconductor datasheet?p=BU52792GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 6µA
Test Condition: 25°C
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BH1726NUC-E2 BH1726NUC-E2 Rohm Semiconductor datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
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BU52792GWZ-E2 BU52792GWZ-E2 Rohm Semiconductor datasheet?p=BU52792GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 6µA
Test Condition: 25°C
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ROHM-STEPMO_EVK_206 ROHM-STEPMO_EVK_206 Rohm Semiconductor STEPMO_EVK_20x_Manual_REV1.3.pdf Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
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SCS230KE2AHRC SCS230KE2AHRC Rohm Semiconductor Description: DIODE ARRAY SCHOTTKY 1200V TO247
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SCS240KE2AHRC SCS240KE2AHRC Rohm Semiconductor datasheet?p=SCS240KE2AHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS310AMC SCS310AMC Rohm Semiconductor datasheet?p=SCS310AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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SCS312AHGC9 SCS312AHGC9 Rohm Semiconductor datasheet?p=SCS312AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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SCS315AHGC9 SCS315AHGC9 Rohm Semiconductor datasheet?p=SCS315AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
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SCS320AHGC9 SCS320AHGC9 Rohm Semiconductor datasheet?p=SCS320AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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R6003KND3TL1 R6003KND3TL1 Rohm Semiconductor datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Produkt ist nicht verfügbar
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R6003KND3TL1 R6003KND3TL1 Rohm Semiconductor datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
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2SA2088U3T106 2SA2088U3T106 Rohm Semiconductor datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
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DTA113ZU3T106 DTA113ZU3T106 Rohm Semiconductor datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
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DTA115EU3T106 DTA115EU3T106 Rohm Semiconductor datasheet?p=DTA115EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DTA123EU3T106 DTA123EU3T106 Rohm Semiconductor datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DTA123YU3T106 DTA123YU3T106 Rohm Semiconductor datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC113ZU3T106 DTC113ZU3T106 Rohm Semiconductor datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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3000+0.06 EUR
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DTC115GU3T106 DTC115GU3T106 Rohm Semiconductor datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
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3000+0.06 EUR
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DTC123YU3T106 DTC123YU3T106 Rohm Semiconductor datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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3000+0.06 EUR
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DTC143EU3T106 DTC143EU3T106 Rohm Semiconductor datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143XU3T106 DTC143XU3T106 Rohm Semiconductor datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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2SA2088U3T106 2SA2088U3T106 Rohm Semiconductor datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 11147 Stücke:
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26+0.69 EUR
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100+0.27 EUR
500+0.20 EUR
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DTA113ZU3T106 DTA113ZU3T106 Rohm Semiconductor datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 7310 Stücke:
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59+0.30 EUR
96+0.18 EUR
155+0.11 EUR
500+0.08 EUR
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DTA115EU3T106 DTA115EU3T106 Rohm Semiconductor datasheet?p=DTA115EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2728 Stücke:
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DTA123EU3T106 DTA123EU3T106 Rohm Semiconductor datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 480 Stücke:
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DTA123YU3T106 DTA123YU3T106 Rohm Semiconductor datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC113ZU3T106 DTC113ZU3T106 Rohm Semiconductor datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3334 Stücke:
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DTC115GU3T106 DTC115GU3T106 Rohm Semiconductor datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
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DTC123YU3T106 DTC123YU3T106 Rohm Semiconductor datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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93+0.19 EUR
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DTC143EU3T106 DTC143EU3T106 Rohm Semiconductor datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 1066 Stücke:
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DTC143XU3T106 DTC143XU3T106 Rohm Semiconductor datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1778 Stücke:
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RS1P600BETB1 RS1P600BETB1 Rohm Semiconductor rs1p600betb1-e.pdf Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
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RS1P600BETB1 RS1P600BETB1 Rohm Semiconductor rs1p600betb1-e.pdf Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
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R8002ANJFRGTL R8002ANJFRGTL Rohm Semiconductor datasheet?p=R8002ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 2A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS116HMFHT116 datasheet?p=BAS116HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS116HMFHT116
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16HMFHT116 datasheet?p=BAS16HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS16HMFHT116
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 7657 Stücke:
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Anzahl Preis
56+0.32 EUR
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500+0.09 EUR
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BAV199HMFHT116 datasheet?p=BAV199HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV199HMFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99HMFHT116 datasheet?p=BAV99HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAV99HMFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 3863 Stücke:
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56+0.32 EUR
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150+0.12 EUR
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LMR1802G-LBTR datasheet?p=LMR1802G-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR1802G-LBTR
Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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LMR1802G-LBTR datasheet?p=LMR1802G-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR1802G-LBTR
Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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RB095BGE-30TL datasheet?p=RB095BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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RB095BGE-30TL datasheet?p=RB095BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 2393 Stücke:
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10+1.81 EUR
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RB095BGE-40TL datasheet?p=RB095BGE-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095BGE-40TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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12+1.58 EUR
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RB095BGE-60TL datasheet?p=RB095BGE-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095BGE-60TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 499 Stücke:
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9+2.09 EUR
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RB095BGE-90TL datasheet?p=RB095BGE-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095BGE-90TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
auf Bestellung 897 Stücke:
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13+1.44 EUR
15+1.18 EUR
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RGTV00TS65DGC11 datasheet?p=RGTV00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV00TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 276 W
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RGTV60TS65DGC11 datasheet?p=RGTV60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV60TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
Produkt ist nicht verfügbar
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RGTV60TS65GC11 datasheet?p=RGTV60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV60TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
auf Bestellung 157 Stücke:
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4+5.30 EUR
30+2.87 EUR
120+2.33 EUR
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RGW00TK65DGVC11 datasheet?p=RGW00TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TK65DGVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
auf Bestellung 425 Stücke:
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2+9.75 EUR
30+6.04 EUR
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RGW00TK65GVC11 datasheet?p=RGW00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
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RGW00TS65DGC11 rgw00ts65d-e.pdf
RGW00TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Produkt ist nicht verfügbar
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RGW00TS65GC11 rgw00ts65-e.pdf
RGW00TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
auf Bestellung 439 Stücke:
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2+10.07 EUR
10+9.04 EUR
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RGW60TS65DGC11 datasheet?p=RGW60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 450 Stücke:
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2+9.10 EUR
30+5.15 EUR
120+4.27 EUR
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RGW60TS65GC11 datasheet?p=RGW60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 420 Stücke:
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3+6.55 EUR
30+3.71 EUR
120+3.58 EUR
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RGW80TK65DGVC11 datasheet?p=RGW80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TK65DGVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
auf Bestellung 440 Stücke:
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3+7.13 EUR
30+5.69 EUR
120+5.27 EUR
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RGW80TK65GVC11 datasheet?p=RGW80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
auf Bestellung 449 Stücke:
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3+6.09 EUR
30+3.33 EUR
120+2.71 EUR
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RGW80TS65DGC11 datasheet?p=RGW80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 314 Stücke:
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2+11.25 EUR
30+6.47 EUR
120+5.41 EUR
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RGW80TS65GC11 datasheet?p=RGW80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 122 Stücke:
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3+6.92 EUR
30+3.92 EUR
120+3.84 EUR
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BH1726NUC-E2 datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1726NUC-E2
Hersteller: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
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4000+2.11 EUR
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BU52792GWZ-E2 datasheet?p=BU52792GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU52792GWZ-E2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 6µA
Test Condition: 25°C
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BH1726NUC-E2 datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1726NUC-E2
Hersteller: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
auf Bestellung 6795 Stücke:
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6+3.08 EUR
10+2.94 EUR
25+2.77 EUR
50+2.65 EUR
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BU52792GWZ-E2 datasheet?p=BU52792GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU52792GWZ-E2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 6µA
Test Condition: 25°C
auf Bestellung 1466 Stücke:
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21+0.86 EUR
25+0.73 EUR
26+0.68 EUR
29+0.63 EUR
50+0.59 EUR
100+0.56 EUR
500+0.49 EUR
1000+0.47 EUR
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ROHM-STEPMO_EVK_206 STEPMO_EVK_20x_Manual_REV1.3.pdf
ROHM-STEPMO_EVK_206
Hersteller: Rohm Semiconductor
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
Produkt ist nicht verfügbar
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SCS230KE2AHRC
SCS230KE2AHRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Produkt ist nicht verfügbar
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SCS240KE2AHRC datasheet?p=SCS240KE2AHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS240KE2AHRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS310AMC datasheet?p=SCS310AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS310AMC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 215 Stücke:
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2+12.27 EUR
50+6.60 EUR
100+6.05 EUR
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SCS312AHGC9 datasheet?p=SCS312AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS312AHGC9
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 27 Stücke:
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3+7.15 EUR
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SCS315AHGC9 datasheet?p=SCS315AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS315AHGC9
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 392 Stücke:
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2+13.01 EUR
50+10.37 EUR
100+9.28 EUR
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SCS320AHGC9 datasheet?p=SCS320AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS320AHGC9
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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R6003KND3TL1 datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6003KND3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
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R6003KND3TL1 datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6003KND3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
auf Bestellung 96 Stücke:
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Anzahl Preis
5+4.03 EUR
10+2.59 EUR
Mindestbestellmenge: 5
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2SA2088U3T106 datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2088U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTA113ZU3T106 datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA113ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTA115EU3T106 datasheet?p=DTA115EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DTA123EU3T106 datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EU3T106
Hersteller: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DTA123YU3T106 datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YU3T106
Hersteller: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTC113ZU3T106 datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC113ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTC115GU3T106 datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115GU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTC123YU3T106 datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTC143EU3T106 datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143XU3T106 datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2088U3T106 datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2088U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 11147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.42 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DTA113ZU3T106 datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA113ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 7310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
96+0.18 EUR
155+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DTA115EU3T106 datasheet?p=DTA115EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DTA123EU3T106 datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EU3T106
Hersteller: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
61+0.29 EUR
114+0.16 EUR
Mindestbestellmenge: 50
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DTA123YU3T106 datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YU3T106
Hersteller: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
61+0.29 EUR
114+0.16 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
DTC113ZU3T106 datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC113ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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DTC115GU3T106 datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115GU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
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DTC123YU3T106 datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 5717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DTC143EU3T106 datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 1066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
97+0.18 EUR
156+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DTC143XU3T106 datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
93+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RS1P600BETB1 rs1p600betb1-e.pdf
RS1P600BETB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
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RS1P600BETB1 rs1p600betb1-e.pdf
RS1P600BETB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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R8002ANJFRGTL datasheet?p=R8002ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002ANJFRGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 2A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
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