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RGTV60TK65GVC11 RGTV60TK65GVC11 Rohm Semiconductor datasheet?p=RGTV60TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
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RGTH40TK65GC11 RGTH40TK65GC11 Rohm Semiconductor datasheet?p=RGTH40TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
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RGTH50TK65GC11 RGTH50TK65GC11 Rohm Semiconductor datasheet?p=RGTH50TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
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RGTH40TK65DGC11 RGTH40TK65DGC11 Rohm Semiconductor datasheet?p=RGTH40TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
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RGTH50TK65DGC11 RGTH50TK65DGC11 Rohm Semiconductor datasheet?p=RGTH50TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
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RGTH80TK65GC11 RGTH80TK65GC11 Rohm Semiconductor datasheet?p=RGTH80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 31A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
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RB168VAM100TR RB168VAM100TR Rohm Semiconductor datasheet?p=RB168VAM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
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ESR18EZPJ204 ESR18EZPJ204 Rohm Semiconductor esr-e.pdf Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
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DTA143ZU3T106 DTA143ZU3T106 Rohm Semiconductor datasheet?p=DTA143ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTA143ZU3T106 DTA143ZU3T106 Rohm Semiconductor datasheet?p=DTA143ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTA143EEBHZGTL DTA143EEBHZGTL Rohm Semiconductor dta143eebhzgtl-e.pdf Description: PNP DIGITAL TRANSISTOR (WITH BUI
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DTA143EEBHZGTL DTA143EEBHZGTL Rohm Semiconductor dta143eebhzgtl-e.pdf Description: PNP DIGITAL TRANSISTOR (WITH BUI
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BA178M18FP-E2 BA178M18FP-E2 Rohm Semiconductor datasheet?p=BA178M18FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 18V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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BA178M18FP-E2 BA178M18FP-E2 Rohm Semiconductor datasheet?p=BA178M18FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 18V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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DTA143EEFRATL DTA143EEFRATL Rohm Semiconductor Description: PNP DIGITAL TRANSISTOR (AEC-Q101
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DTA143EEFRATL DTA143EEFRATL Rohm Semiconductor Description: PNP DIGITAL TRANSISTOR (AEC-Q101
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BU52098GWZ-E2 BU52098GWZ-E2 Rohm Semiconductor datasheet?p=BU52098GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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BU52098GWZ-E2 BU52098GWZ-E2 Rohm Semiconductor datasheet?p=BU52098GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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BU52274NUZ-ZE2 BU52274NUZ-ZE2 Rohm Semiconductor bu52274nuz-e.pdf Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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BU52274NUZ-ZE2 BU52274NUZ-ZE2 Rohm Semiconductor bu52274nuz-e.pdf Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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ML620Q504H-NNNTBWBX ML620Q504H-NNNTBWBX Rohm Semiconductor FEUL620Q504H-02.pdf Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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ML620Q504H-NNNTBWBX ML620Q504H-NNNTBWBX Rohm Semiconductor FEUL620Q504H-02.pdf Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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R6012JNJGTL R6012JNJGTL Rohm Semiconductor datasheet?p=R6012JNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R6012JNJGTL R6012JNJGTL Rohm Semiconductor datasheet?p=R6012JNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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BA6209 BA6209 Rohm Semiconductor BA6209%28N%29.pdf Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
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2SCR502U3HZGT106 2SCR502U3HZGT106 Rohm Semiconductor datasheet?p=2SCR502U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
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2SCR502U3HZGT106 2SCR502U3HZGT106 Rohm Semiconductor datasheet?p=2SCR502U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
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2SCR574D3FRATL 2SCR574D3FRATL Rohm Semiconductor datasheet?p=2SCR574D3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Qualification: AEC-Q101
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2SCR574D3FRATL 2SCR574D3FRATL Rohm Semiconductor datasheet?p=2SCR574D3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Qualification: AEC-Q101
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2SCR574D3TL1 2SCR574D3TL1 Rohm Semiconductor datasheet?p=2SCR574D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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2SCR574D3TL1 2SCR574D3TL1 Rohm Semiconductor datasheet?p=2SCR574D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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2SCR574DGTL 2SCR574DGTL Rohm Semiconductor datasheet?p=2SCR574D&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TRANS NPN 80V 2A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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BD48L25G-TL BD48L25G-TL Rohm Semiconductor datasheet?p=BD48L25G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 2.5V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BD48L25G-TL BD48L25G-TL Rohm Semiconductor datasheet?p=BD48L25G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 2.5V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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UDZVFHTE-175.1B UDZVFHTE-175.1B Rohm Semiconductor datasheet?p=UDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.09V 200MW UMD2
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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UDZVFHTE-175.1B UDZVFHTE-175.1B Rohm Semiconductor datasheet?p=UDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.09V 200MW UMD2
Tolerance: ±2.16%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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EDZVFHT2R5.1B EDZVFHT2R5.1B Rohm Semiconductor datasheet?p=EDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.09V 150MW EMD2
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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EDZVFHT2R5.1B EDZVFHT2R5.1B Rohm Semiconductor datasheet?p=EDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.09V 150MW EMD2
Tolerance: ±2.16%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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R6509KNJTL R6509KNJTL Rohm Semiconductor r6509knjtl-e.pdf Description: MOSFET N-CH 650V 9A LPTS
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R6509KNJTL R6509KNJTL Rohm Semiconductor r6509knjtl-e.pdf Description: MOSFET N-CH 650V 9A LPTS
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UMZ5.1KFHTL UMZ5.1KFHTL Rohm Semiconductor datasheet?p=UMZ5.1KFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 5.09V UMD4
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Supplier Device Package: UMD4
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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RF2001NS3DTL RF2001NS3DTL Rohm Semiconductor datasheet?p=RF2001NS3D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 300V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
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RF2001NS3DTL RF2001NS3DTL Rohm Semiconductor datasheet?p=RF2001NS3D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 300V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
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UMN20NFHTR UMN20NFHTR Rohm Semiconductor umn20nfhtr-e.pdf Description: SWITCHING DIODES (CORRESPONDS TO
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UMN20NFHTR UMN20NFHTR Rohm Semiconductor umn20nfhtr-e.pdf Description: SWITCHING DIODES (CORRESPONDS TO
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DTD513ZETL DTD513ZETL Rohm Semiconductor datasheet?p=DTD513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD513ZETL DTD513ZETL Rohm Semiconductor datasheet?p=DTD513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BU12JA2VG-CGTR BU12JA2VG-CGTR Rohm Semiconductor datasheet?p=BU12JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.2V 200MA 5SSOP
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Reverse Polarity
PSRR: 68dB (1kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BU12JA2VG-CGTR BU12JA2VG-CGTR Rohm Semiconductor datasheet?p=BU12JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.2V 200MA 5SSOP
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Reverse Polarity
PSRR: 68dB (1kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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RTL035N03FRATR RTL035N03FRATR Rohm Semiconductor datasheet?p=RTL035N03FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Qualification: AEC-Q101
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RTL035N03FRATR RTL035N03FRATR Rohm Semiconductor datasheet?p=RTL035N03FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Qualification: AEC-Q101
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RXR035N03TCL RXR035N03TCL Rohm Semiconductor Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RXR035N03TCL RXR035N03TCL Rohm Semiconductor Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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RSQ035N03HZGTR RSQ035N03HZGTR Rohm Semiconductor rsq035n03hzgtr-e.pdf Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ035N03HZGTR RSQ035N03HZGTR Rohm Semiconductor rsq035n03hzgtr-e.pdf Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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BD5226G-2MTR BD5226G-2MTR Rohm Semiconductor datasheet?p=BD5226G-2M&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 5-SSOP
Voltage - Threshold: 2.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BD5226G-2MTR BD5226G-2MTR Rohm Semiconductor datasheet?p=BD5226G-2M&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Supplier Device Package: 5-SSOP
Voltage - Threshold: 2.6V
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RD3G500GNTL RD3G500GNTL Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
Produkt ist nicht verfügbar
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RD3G500GNTL RD3G500GNTL Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
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RB160L-40TE25 RB160L-40TE25 Rohm Semiconductor RB160L40.pdf Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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RGTV60TK65GVC11 datasheet?p=RGTV60TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV60TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
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RGTH40TK65GC11 datasheet?p=RGTH40TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH40TK65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
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RGTH50TK65GC11 datasheet?p=RGTH50TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH50TK65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
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RGTH40TK65DGC11 datasheet?p=RGTH40TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH40TK65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
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RGTH50TK65DGC11 datasheet?p=RGTH50TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH50TK65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
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RGTH80TK65GC11 datasheet?p=RGTH80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH80TK65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 31A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
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RB168VAM100TR datasheet?p=RB168VAM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VAM100TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
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ESR18EZPJ204 esr-e.pdf
ESR18EZPJ204
Hersteller: Rohm Semiconductor
Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
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1000+0.067 EUR
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DTA143ZU3T106 datasheet?p=DTA143ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTA143ZU3T106 datasheet?p=DTA143ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTA143EEBHZGTL dta143eebhzgtl-e.pdf
DTA143EEBHZGTL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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DTA143EEBHZGTL dta143eebhzgtl-e.pdf
DTA143EEBHZGTL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Produkt ist nicht verfügbar
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BA178M18FP-E2 datasheet?p=BA178M18FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M18FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Produkt ist nicht verfügbar
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BA178M18FP-E2 datasheet?p=BA178M18FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M18FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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DTA143EEFRATL
DTA143EEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Produkt ist nicht verfügbar
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DTA143EEFRATL
DTA143EEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Produkt ist nicht verfügbar
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BU52098GWZ-E2 datasheet?p=BU52098GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU52098GWZ-E2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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3000+0.54 EUR
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BU52098GWZ-E2 datasheet?p=BU52098GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU52098GWZ-E2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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BU52274NUZ-ZE2 bu52274nuz-e.pdf
BU52274NUZ-ZE2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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BU52274NUZ-ZE2 bu52274nuz-e.pdf
BU52274NUZ-ZE2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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ML620Q504H-NNNTBWBX FEUL620Q504H-02.pdf
ML620Q504H-NNNTBWBX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML620Q504H-NNNTBWBX FEUL620Q504H-02.pdf
ML620Q504H-NNNTBWBX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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R6012JNJGTL datasheet?p=R6012JNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6012JNJGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R6012JNJGTL datasheet?p=R6012JNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6012JNJGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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BA6209 BA6209%28N%29.pdf
BA6209
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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2SCR502U3HZGT106 datasheet?p=2SCR502U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR502U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SCR502U3HZGT106 datasheet?p=2SCR502U3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR502U3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
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2SCR574D3FRATL datasheet?p=2SCR574D3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR574D3FRATL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SCR574D3FRATL datasheet?p=2SCR574D3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR574D3FRATL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Qualification: AEC-Q101
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2SCR574D3TL1 datasheet?p=2SCR574D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR574D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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2SCR574D3TL1 datasheet?p=2SCR574D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR574D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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2SCR574DGTL datasheet?p=2SCR574D&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
2SCR574DGTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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BD48L25G-TL datasheet?p=BD48L25G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD48L25G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 2.5V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BD48L25G-TL datasheet?p=BD48L25G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD48L25G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 2.5V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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UDZVFHTE-175.1B datasheet?p=UDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVFHTE-175.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.09V 200MW UMD2
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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UDZVFHTE-175.1B datasheet?p=UDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVFHTE-175.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.09V 200MW UMD2
Tolerance: ±2.16%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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EDZVFHT2R5.1B datasheet?p=EDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVFHT2R5.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.09V 150MW EMD2
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EDZVFHT2R5.1B datasheet?p=EDZVFH5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVFHT2R5.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.09V 150MW EMD2
Tolerance: ±2.16%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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R6509KNJTL r6509knjtl-e.pdf
R6509KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Produkt ist nicht verfügbar
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R6509KNJTL r6509knjtl-e.pdf
R6509KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
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UMZ5.1KFHTL datasheet?p=UMZ5.1KFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ5.1KFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.09V UMD4
Tolerance: ±2.16%
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Supplier Device Package: UMD4
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RF2001NS3DTL datasheet?p=RF2001NS3D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF2001NS3DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 300V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Produkt ist nicht verfügbar
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RF2001NS3DTL datasheet?p=RF2001NS3D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF2001NS3DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 300V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
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UMN20NFHTR umn20nfhtr-e.pdf
UMN20NFHTR
Hersteller: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
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UMN20NFHTR umn20nfhtr-e.pdf
UMN20NFHTR
Hersteller: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
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DTD513ZETL datasheet?p=DTD513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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3000+0.2 EUR
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DTD513ZETL datasheet?p=DTD513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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100+0.36 EUR
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BU12JA2VG-CGTR datasheet?p=BU12JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU12JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.2V 200MA 5SSOP
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Reverse Polarity
PSRR: 68dB (1kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BU12JA2VG-CGTR datasheet?p=BU12JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU12JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.2V 200MA 5SSOP
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Reverse Polarity
PSRR: 68dB (1kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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RTL035N03FRATR datasheet?p=RTL035N03FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTL035N03FRATR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Qualification: AEC-Q101
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3000+0.31 EUR
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RTL035N03FRATR datasheet?p=RTL035N03FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTL035N03FRATR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Qualification: AEC-Q101
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RXR035N03TCL
RXR035N03TCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RXR035N03TCL
RXR035N03TCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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RSQ035N03HZGTR rsq035n03hzgtr-e.pdf
RSQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RSQ035N03HZGTR rsq035n03hzgtr-e.pdf
RSQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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100+0.8 EUR
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BD5226G-2MTR datasheet?p=BD5226G-2M&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BD5226G-2MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 5-SSOP
Voltage - Threshold: 2.6V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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3000+0.39 EUR
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BD5226G-2MTR datasheet?p=BD5226G-2M&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BD5226G-2MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Supplier Device Package: 5-SSOP
Voltage - Threshold: 2.6V
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20+1.09 EUR
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RD3G500GNTL datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G500GNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
Produkt ist nicht verfügbar
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RD3G500GNTL datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3G500GNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
auf Bestellung 758 Stücke:
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RB160L-40TE25 RB160L40.pdf
RB160L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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1500+0.26 EUR
3000+0.23 EUR
4500+0.21 EUR
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