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BU18JA2MNVX-CTL BU18JA2MNVX-CTL Rohm Semiconductor datasheet?p=BU18JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 1.8V
Control Features: On/Off
Grade: Automotive
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.71V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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BU18JA2MNVX-CTL BU18JA2MNVX-CTL Rohm Semiconductor datasheet?p=BU18JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V SSON004R1010
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 1.8V
Control Features: On/Off
Grade: Automotive
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.71V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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BR24T01FVM-WTR BR24T01FVM-WTR Rohm Semiconductor br24t01-w-e.pdf Description: IC EEPROM 1K I2C 400KHZ 8MSOP
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BC858BHZGT116 BC858BHZGT116 Rohm Semiconductor datasheet?p=BC858BHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 30V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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BC858BHZGT116 BC858BHZGT116 Rohm Semiconductor datasheet?p=BC858BHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 30V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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UMT1NFHATN UMT1NFHATN Rohm Semiconductor datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP DUAL 50V 150MA UMT6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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2SD1781KFRAT146R 2SD1781KFRAT146R Rohm Semiconductor Description: TRANS NPN 32V 0.8A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Qualification: AEC-Q101
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2SD1781KFRAT146R 2SD1781KFRAT146R Rohm Semiconductor Description: TRANS NPN 32V 0.8A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Qualification: AEC-Q101
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QSL12TR QSL12TR Rohm Semiconductor datasheet?p=QSL12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT5
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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QSL12TR QSL12TR Rohm Semiconductor datasheet?p=QSL12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT5
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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RB058LAM-60TR RB058LAM-60TR Rohm Semiconductor datasheet?p=RB058LAM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 3A PMDTM
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RB058LAM-60TR RB058LAM-60TR Rohm Semiconductor datasheet?p=RB058LAM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 3A PMDTM
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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UDZLVTE-17110 UDZLVTE-17110 Rohm Semiconductor datasheet?p=UDZLV110&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 110V 200MW SOD323FL
Current - Reverse Leakage @ Vr: 200 nA @ 84 V
Power - Max: 200 mW
Supplier Device Package: SOD-323FL
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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UDZLVTE-17110 UDZLVTE-17110 Rohm Semiconductor datasheet?p=UDZLV110&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 110V 200MW SOD323FL
Current - Reverse Leakage @ Vr: 200 nA @ 84 V
Power - Max: 200 mW
Supplier Device Package: SOD-323FL
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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R6024KNZC17 R6024KNZC17 Rohm Semiconductor datasheet?p=R6024KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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R6024ENZC17 R6024ENZC17 Rohm Semiconductor datasheet?p=R6024ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6024ENZM12C8 R6024ENZM12C8 Rohm Semiconductor r6024enzc17-e.pdf Description: MOSFET N-CH 600V 24A TO3
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6024ENZ4C13 R6024ENZ4C13 Rohm Semiconductor datasheet?p=R6024ENZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 600V 24A TO247
Grade: Automotive
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: TO-247
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6024KNZ4C13 R6024KNZ4C13 Rohm Semiconductor datasheet?p=R6024KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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MNR18ERAPJ513 MNR18ERAPJ513 Rohm Semiconductor Description: RES ARRAY 8 RES 51K OHM 1606
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BD9E303EFJ-LBH2 BD9E303EFJ-LBH2 Rohm Semiconductor datasheet?p=BD9E303EFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
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2SCR553RTL 2SCR553RTL Rohm Semiconductor datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553RTL 2SCR553RTL Rohm Semiconductor datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553PFRAT100 2SCR553PFRAT100 Rohm Semiconductor datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553PFRAT100 2SCR553PFRAT100 Rohm Semiconductor datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SAR512P5T100 2SAR512P5T100 Rohm Semiconductor 2sar512p5t100-e.pdf Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SAR512P5T100 2SAR512P5T100 Rohm Semiconductor 2sar512p5t100-e.pdf Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SAR512PFRAT100 2SAR512PFRAT100 Rohm Semiconductor 2sar512pfra-e.pdf Description: PNP DRIVER TRANSISTOR (CORRESPON
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2SAR512PFRAT100 2SAR512PFRAT100 Rohm Semiconductor 2sar512pfra-e.pdf Description: PNP DRIVER TRANSISTOR (CORRESPON
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BD733L2FP-CE2 BD733L2FP-CE2 Rohm Semiconductor datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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BD733L2FP-CE2 BD733L2FP-CE2 Rohm Semiconductor datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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BD733L5FP-CE2 BD733L5FP-CE2 Rohm Semiconductor datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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BD733L5FP-CE2 BD733L5FP-CE2 Rohm Semiconductor datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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BD733L2FP3-EVK-301 BD733L2FP3-EVK-301 Rohm Semiconductor bd7xxl2efj-c-e.pdf Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
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RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
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SH8KA4TB SH8KA4TB Rohm Semiconductor SOP8_TB_taping.pdf Description: MOSFET 2N-CH 30V 9A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SH8KA2GZETB SH8KA2GZETB Rohm Semiconductor Description: MOSFET 2N-CH 30V 8A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
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SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
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SH8KA4TB1 SH8KA4TB1 Rohm Semiconductor datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET2 N-CH SOP8G
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1000+1.34 EUR
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
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KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
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KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200 MHz
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BU18JA2MNVX-CTL datasheet?p=BU18JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU18JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 1.8V
Control Features: On/Off
Grade: Automotive
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.71V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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BU18JA2MNVX-CTL datasheet?p=BU18JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU18JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V SSON004R1010
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 1.8V
Control Features: On/Off
Grade: Automotive
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.71V @ 200mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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18+1.19 EUR
25+0.84 EUR
28+0.76 EUR
100+0.67 EUR
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1000+0.57 EUR
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BR24T01FVM-WTR br24t01-w-e.pdf
BR24T01FVM-WTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1K I2C 400KHZ 8MSOP
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BC858BHZGT116 datasheet?p=BC858BHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BC858BHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC858BHZGT116 datasheet?p=BC858BHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BC858BHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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103+0.2 EUR
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UMT1NFHATN datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT1NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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2SD1781KFRAT146R
2SD1781KFRAT146R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 0.8A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SD1781KFRAT146R
2SD1781KFRAT146R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 0.8A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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QSL12TR datasheet?p=QSL12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QSL12TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT5
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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QSL12TR datasheet?p=QSL12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QSL12TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT5
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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RB058LAM-60TR datasheet?p=RB058LAM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB058LAM-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RB058LAM-60TR datasheet?p=RB058LAM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB058LAM-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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UDZLVTE-17110 datasheet?p=UDZLV110&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZLVTE-17110
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 110V 200MW SOD323FL
Current - Reverse Leakage @ Vr: 200 nA @ 84 V
Power - Max: 200 mW
Supplier Device Package: SOD-323FL
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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UDZLVTE-17110 datasheet?p=UDZLV110&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZLVTE-17110
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 110V 200MW SOD323FL
Current - Reverse Leakage @ Vr: 200 nA @ 84 V
Power - Max: 200 mW
Supplier Device Package: SOD-323FL
Voltage - Zener (Nom) (Vz): 110 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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R6024KNZC17 datasheet?p=R6024KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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R6024ENZC17 datasheet?p=R6024ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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2+13.72 EUR
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R6024ENZM12C8 r6024enzc17-e.pdf
R6024ENZM12C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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R6024ENZ4C13 datasheet?p=R6024ENZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6024ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Grade: Automotive
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: TO-247
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6024KNZ4C13 datasheet?p=R6024KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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MNR18ERAPJ513
MNR18ERAPJ513
Hersteller: Rohm Semiconductor
Description: RES ARRAY 8 RES 51K OHM 1606
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BD9E303EFJ-LBH2 datasheet?p=BD9E303EFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9E303EFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
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2SCR553RTL datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553RTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SCR553RTL datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553RTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553PFRAT100 datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PFRAT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553PFRAT100 datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PFRAT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SAR512P5T100 2sar512p5t100-e.pdf
2SAR512P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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1000+0.33 EUR
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2SAR512P5T100 2sar512p5t100-e.pdf
2SAR512P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SAR512PFRAT100 2sar512pfra-e.pdf
2SAR512PFRAT100
Hersteller: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
Produkt ist nicht verfügbar
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2SAR512PFRAT100 2sar512pfra-e.pdf
2SAR512PFRAT100
Hersteller: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
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BD733L2FP-CE2 datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L2FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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BD733L2FP-CE2 datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L2FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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6+3.5 EUR
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BD733L5FP-CE2 datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD733L5FP-CE2 datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 871 Stücke:
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5+4.27 EUR
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BD733L2FP3-EVK-301 bd7xxl2efj-c-e.pdf
BD733L2FP3-EVK-301
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 613 Stücke:
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RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
Produkt ist nicht verfügbar
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RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
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SH8KA4TB SOP8_TB_taping.pdf
SH8KA4TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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14+1.51 EUR
16+1.37 EUR
100+0.99 EUR
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SH8KA2GZETB
SH8KA2GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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8+2.75 EUR
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100+1.74 EUR
500+1.48 EUR
1000+1.2 EUR
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
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SH8KA4TB1 datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8KA4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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2500+1.3 EUR
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BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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8+2.62 EUR
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250+1.45 EUR
500+1.39 EUR
1000+1.34 EUR
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BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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3000+0.098 EUR
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BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
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KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
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KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200 MHz
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DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6355 Stücke:
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