Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97451) > Seite 808 nach 1625
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DAN217WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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DAP202UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
Produkt ist nicht verfügbar |
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DTA013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.15W SC89 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA013ZUBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 0.2W SC85 |
Produkt ist nicht verfügbar |
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DTC013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC013ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.15W VMT3 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC013ZUBTL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.2W UMT3F |
Produkt ist nicht verfügbar |
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DTC024XMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.15W VMT3 |
Produkt ist nicht verfügbar |
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DTC024XUBTL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.2W UMT3F |
Produkt ist nicht verfügbar |
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EDZVFHT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMB51T2R | Rohm Semiconductor | Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
Produkt ist nicht verfügbar |
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EMB61T2R | Rohm Semiconductor | Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMB75T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMD53T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMD59T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMD62T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 Part Status: Active |
Produkt ist nicht verfügbar |
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EMH59T2R | Rohm Semiconductor | Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMH60T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMH61T2R | Rohm Semiconductor | Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
Produkt ist nicht verfügbar |
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EMH75T2R | Rohm Semiconductor | Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMT51T2R | Rohm Semiconductor | Description: TRANS 2PNP 20V 0.2A 6EMT |
Produkt ist nicht verfügbar |
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EMX52T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.1A EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 350MHz Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMZ51T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 400MHz, 350MHz Supplier Device Package: EMT6 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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LM4559FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 3.3mA Slew Rate: 3.5V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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LM4565FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 4.5mA Slew Rate: 5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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LMR341G-GTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 6SSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 80µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 6-SSOP Number of Circuits: 1 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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LMR342F-GE2 | Rohm Semiconductor | Description: IC CMOS 2 CIRCUIT 8SOP |
Produkt ist nicht verfügbar |
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LMR342FVM-GTR | Rohm Semiconductor | Description: IC OP AMP GROUND SENSE 8MSOP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR344F-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR344FJ-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPJ Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-SOPJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR344FVJ-E2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-TSSOP-BJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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LMR822F-GE2 | Rohm Semiconductor | Description: IC OPAMP GP 2 CIRCUIT 8SOP |
Produkt ist nicht verfügbar |
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LMR822FV-GE2 | Rohm Semiconductor | Description: IC OP AMP FULL SWING 8SSOP |
Produkt ist nicht verfügbar |
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LMR824F-GE2 | Rohm Semiconductor | Description: IC OP AMP FULL SWING 14SOP |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR824FJ-GE2 | Rohm Semiconductor | Description: IC OP AMP FULL SWING SOP14J |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR824FVJ-E2 | Rohm Semiconductor | Description: IC OP AMP FULL SWING 14TSSOP |
Produkt ist nicht verfügbar |
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LMR932FVJ-GE2 | Rohm Semiconductor | Description: IC OP AMP FULL SWING 8TSSOP |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMR932FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 140µA Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 5 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
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QH8MA4TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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QS5W1TR | Rohm Semiconductor | Description: TRANS 2NPN 30V 3A TSMT5 |
Produkt ist nicht verfügbar |
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QS5W2TR | Rohm Semiconductor | Description: TRANS 2NPN 50V 3A TSMT5 |
Produkt ist nicht verfügbar |
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QS5Y1TR | Rohm Semiconductor | Description: TRANS NPN/PNP 30V 3A TSMT5 |
Produkt ist nicht verfügbar |
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QS6Z5TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 1A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz, 400MHz Supplier Device Package: TSMT6 (SC-95) |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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QS8K13TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
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RB050L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RB050L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB055L-30DDTE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 3A PMDS |
Produkt ist nicht verfügbar |
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RB055L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB058L150TE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 150V 3A PMDS |
Produkt ist nicht verfügbar |
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RB058L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB058L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 1430 Stücke: Lieferzeit 21-28 Tag (e) |
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RB060L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
Produkt ist nicht verfügbar |
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RB060M-40DDTR | Rohm Semiconductor | Description: DIODE SCHOTTKY 40V 2A PMDU |
Produkt ist nicht verfügbar |
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RB060M-60DDTR | Rohm Semiconductor | Description: DIODE SCHOTTKY 60V 2A PMDU |
Produkt ist nicht verfügbar |
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RB068L100DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB068L150TE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 150V 2A PMDS |
Produkt ist nicht verfügbar |
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RB068L-40TE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 40V 2A PMDS |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB068L-60DDTE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 60V 2A PMDS |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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RB078BM30STL | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 5A TO252 |
Produkt ist nicht verfügbar |
DAN217WMTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
9000+ | 0.11 EUR |
DAP202UMTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Produkt ist nicht verfügbar
DTA013ZEBTL |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
DTA013ZUBTL |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W SC85
Description: TRANS PREBIAS PNP 0.2W SC85
Produkt ist nicht verfügbar
DTC013ZEBTL |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.094 EUR |
9000+ | 0.078 EUR |
DTC013ZMT2L |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)DTC013ZUBTL |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
Produkt ist nicht verfügbar
DTC024XMT2L |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
Produkt ist nicht verfügbar
DTC024XUBTL |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
Produkt ist nicht verfügbar
EDZVFHT2R12B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.13 EUR |
EMB51T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Produkt ist nicht verfügbar
EMB61T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)EMB75T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
EMD53T2R |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
EMD59T2R |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
16000+ | 0.16 EUR |
EMD62T2R |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
Produkt ist nicht verfügbar
EMH59T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)EMH60T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
16000+ | 0.16 EUR |
EMH61T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Produkt ist nicht verfügbar
EMH75T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)EMT51T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
Description: TRANS 2PNP 20V 0.2A 6EMT
Produkt ist nicht verfügbar
EMX52T2R |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
EMZ51T2R |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.19 EUR |
LM4559FVT-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
LM4565FVM-GTR |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
LMR341G-GTR |
Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
LMR342F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
Description: IC CMOS 2 CIRCUIT 8SOP
Produkt ist nicht verfügbar
LMR342FVM-GTR |
Hersteller: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
Description: IC OP AMP GROUND SENSE 8MSOP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)LMR344F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.23 EUR |
LMR344FJ-GE2 |
Hersteller: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.48 EUR |
LMR344FVJ-E2 |
Hersteller: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
LMR822F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Produkt ist nicht verfügbar
LMR822FV-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
Description: IC OP AMP FULL SWING 8SSOP
Produkt ist nicht verfügbar
LMR824F-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14SOP
Description: IC OP AMP FULL SWING 14SOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)LMR824FJ-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
Description: IC OP AMP FULL SWING SOP14J
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)LMR824FVJ-E2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
Description: IC OP AMP FULL SWING 14TSSOP
Produkt ist nicht verfügbar
LMR932FVJ-GE2 |
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
Description: IC OP AMP FULL SWING 8TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)LMR932FVM-GTR |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.75 EUR |
QH8MA3TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
QH8MA4TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.91 EUR |
QS5W1TR |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
Description: TRANS 2NPN 30V 3A TSMT5
Produkt ist nicht verfügbar
QS5W2TR |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
Description: TRANS 2NPN 50V 3A TSMT5
Produkt ist nicht verfügbar
QS5Y1TR |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
Description: TRANS NPN/PNP 30V 3A TSMT5
Produkt ist nicht verfügbar
QS6Z5TR |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.8 EUR |
QS8K13TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
RB050L-40DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.69 EUR |
3000+ | 0.62 EUR |
RB050L-60DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.71 EUR |
RB055L-30DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Description: DIODE SCHOTTKY 30V 3A PMDS
Produkt ist nicht verfügbar
RB055L-60DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.5 EUR |
RB058L150TE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 3A PMDS
Description: DIODE SCHOTTKY 150V 3A PMDS
Produkt ist nicht verfügbar
RB058L-40DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.7 EUR |
RB058L-60DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1430 Stücke:
Lieferzeit 21-28 Tag (e)RB060L-40DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
RB060M-40DDTR |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDU
Description: DIODE SCHOTTKY 40V 2A PMDU
Produkt ist nicht verfügbar
RB060M-60DDTR |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDU
Description: DIODE SCHOTTKY 60V 2A PMDU
Produkt ist nicht verfügbar
RB068L100DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.73 EUR |
3000+ | 0.65 EUR |
RB068L150TE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDS
Description: DIODE SCHOTTKY 150V 2A PMDS
Produkt ist nicht verfügbar
RB068L-40TE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)RB068L-60DDTE25 |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDS
Description: DIODE SCHOTTKY 60V 2A PMDS
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)RB078BM30STL |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Description: DIODE SCHOTTKY 30V 5A TO252
Produkt ist nicht verfügbar