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RBR3L60BDDTE25 RBR3L60BDDTE25 Rohm Semiconductor rbr3l60bddte25-e.pdf Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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DTC143ZMFHAT2L DTC143ZMFHAT2L Rohm Semiconductor datasheet?p=DTC143ZMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143ZMFHAT2L DTC143ZMFHAT2L Rohm Semiconductor datasheet?p=DTC143ZMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6156 Stücke:
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48+0.44 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.096 EUR
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BR93G66FVM-3AGTTR BR93G66FVM-3AGTTR Rohm Semiconductor br93g66-3a-e Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FVM-3AGTTR BR93G66FVM-3AGTTR Rohm Semiconductor br93g66-3a-e Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FJ-3AGTE2 BR93G66FJ-3AGTE2 Rohm Semiconductor br93g66-3a-e Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FJ-3AGTE2 BR93G66FJ-3AGTE2 Rohm Semiconductor br93g66-3a-e Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR24G64FJ-3AGTE2 BR24G64FJ-3AGTE2 Rohm Semiconductor datasheet?p=BR24G64FJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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BR24G02FJ-3AGTE2 BR24G02FJ-3AGTE2 Rohm Semiconductor br24g02-3a-e.pdf Description: IC EEPROM 2K I2C 1MHZ 8SOPJ
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BR24G02FJ-3AGTE2 BR24G02FJ-3AGTE2 Rohm Semiconductor br24g02-3a-e.pdf Description: IC EEPROM 2K I2C 1MHZ 8SOPJ
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DTA143EMFHAT2L DTA143EMFHAT2L Rohm Semiconductor datasheet?p=DTA143EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA143EMFHAT2L DTA143EMFHAT2L Rohm Semiconductor datasheet?p=DTA143EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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46+0.46 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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DTA143EU3HZGT106 DTA143EU3HZGT106 Rohm Semiconductor datasheet?p=DTA143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA143EU3HZGT106 DTA143EU3HZGT106 Rohm Semiconductor datasheet?p=DTA143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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63+0.33 EUR
101+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
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DTA143EU3T106 DTA143EU3T106 Rohm Semiconductor datasheet?p=DTA143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RB063L-30TE25 RB063L-30TE25 Rohm Semiconductor rb063l-30_datasheet.pdf Description: DIODE SCHOTTKY 30V 2A PMDS
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RB063L-30TE25 RB063L-30TE25 Rohm Semiconductor rb063l-30_datasheet.pdf Description: DIODE SCHOTTKY 30V 2A PMDS
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RSX301L-30TE25 RSX301L-30TE25 Rohm Semiconductor RSX301L-30TE25CT.jpg Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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RSX301L-30TE25 RSX301L-30TE25 Rohm Semiconductor RSX301L-30TE25CT.jpg Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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SML-D14MWT86A SML-D14MWT86A Rohm Semiconductor datasheet?p=SML-D14MW(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YLW-GRN CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 60mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 571nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SML-D14MWT86A SML-D14MWT86A Rohm Semiconductor datasheet?p=SML-D14MW(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YLW-GRN CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 60mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 571nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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500+0.24 EUR
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DTC124ECAT116 DTC124ECAT116 Rohm Semiconductor datasheet?p=DTC124ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC124ECAT116 DTC124ECAT116 Rohm Semiconductor datasheet?p=DTC124ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
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2SAR293PFRAT100 2SAR293PFRAT100 Rohm Semiconductor datasheet?p=2SAR293PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BD750L5FP-CE2 BD750L5FP-CE2 Rohm Semiconductor datasheet?p=BD750L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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4000+2.2 EUR
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BD750L5FP-CE2 BD750L5FP-CE2 Rohm Semiconductor datasheet?p=BD750L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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10+3.21 EUR
25+2.93 EUR
100+2.62 EUR
250+2.48 EUR
500+2.4 EUR
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SML-P11YTT86R SML-P11YTT86R Rohm Semiconductor datasheet?p=SML-P11YT(R)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR 1006 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Color: Yellow
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.6mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 586nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
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SML-P11YTT86R SML-P11YTT86R Rohm Semiconductor datasheet?p=SML-P11YT(R)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Yellow
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.6mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 586nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
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25+0.83 EUR
37+0.57 EUR
100+0.4 EUR
500+0.33 EUR
1000+0.31 EUR
2000+0.29 EUR
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HP8M31TB1 HP8M31TB1 Rohm Semiconductor datasheet?p=HP8M31&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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HP8M31TB1 HP8M31TB1 Rohm Semiconductor datasheet?p=HP8M31&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
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SP8M3TB SP8M3TB Rohm Semiconductor datasheet?p=SP8M3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 5A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
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SP8M3FU6TB SP8M3FU6TB Rohm Semiconductor SP8M3.pdf description Description: MOSFET N/P-CH 30V 5A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
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SP8M3FD5TB1 Rohm Semiconductor Description: MOSFET N/P-CH 30V 8SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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SP8M3FU6TB1 Rohm Semiconductor Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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LP8M3FP8TB1 Rohm Semiconductor Description: MOSFET N-CH SOP8G
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SP8M3FU7TB1 Rohm Semiconductor Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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UFZVFHTE-1720B UFZVFHTE-1720B Rohm Semiconductor datasheet?p=UFZVFH20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 20V 500MW UMD2
Tolerance: ±2.55%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: UMD2
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Qualification: AEC-Q101
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UFZVFHTE-1720B UFZVFHTE-1720B Rohm Semiconductor datasheet?p=UFZVFH20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 20V 500MW UMD2
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: UMD2
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Qualification: AEC-Q101
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RSA6.1U5FHT108 Rohm Semiconductor Description: TVS DIODE 3VWM 6SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SMT6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DTA115EU3HZGT106 DTA115EU3HZGT106 Rohm Semiconductor dta115eu3hzgt106-e.pdf Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA115EU3HZGT106 DTA115EU3HZGT106 Rohm Semiconductor dta115eu3hzgt106-e.pdf Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RB050LAM-40TFTR RB050LAM-40TFTR Rohm Semiconductor datasheet?p=RB050LAM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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RB050LAM-40TFTR RB050LAM-40TFTR Rohm Semiconductor datasheet?p=RB050LAM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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SCS306APC9 SCS306APC9 Rohm Semiconductor scs306ap-e.pdf Description: DIODE SC SCHKY 650V 6A TO220ACP
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RRE04EA4DFHTR RRE04EA4DFHTR Rohm Semiconductor rre04ea4dfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE04EA4DFHTR RRE04EA4DFHTR Rohm Semiconductor rre04ea4dfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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BA6209N BA6209N Rohm Semiconductor BA6209%28N%29.pdf Description: IC MOTOR DRIVER 6V-18V 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-SIP
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Produkt ist nicht verfügbar
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RB541XNFHTR RB541XNFHTR Rohm Semiconductor rb541xnfhtr-e.pdf Description: ROHM'S SCHOTTKY BARRIER DIODES A
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RB541XNFHTR RB541XNFHTR Rohm Semiconductor rb541xnfhtr-e.pdf Description: ROHM'S SCHOTTKY BARRIER DIODES A
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BZX84C15VLFHT116 BZX84C15VLFHT116 Rohm Semiconductor datasheet?p=BZX84C15VLFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 14.7V 250MW SSD3
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
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BZX84C15VLFHT116 BZX84C15VLFHT116 Rohm Semiconductor datasheet?p=BZX84C15VLFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 14.7V 250MW SSD3
Tolerance: ±6.12%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C15VLT116 BZX84C15VLT116 Rohm Semiconductor datasheet?p=BZX84C15VL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 15V 250MW SSD3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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R6015KNX R6015KNX Rohm Semiconductor r6015knx-e.pdf Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015KNJTL R6015KNJTL Rohm Semiconductor datasheet?p=R6015KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015KNJTL R6015KNJTL Rohm Semiconductor datasheet?p=R6015KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015KNZC17 R6015KNZC17 Rohm Semiconductor datasheet?p=R6015KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015ENZC17 R6015ENZC17 Rohm Semiconductor datasheet?p=R6015ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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R6015ENZM12C8 R6015ENZM12C8 Rohm Semiconductor r6015enzc17-e.pdf Description: MOSFET N-CH 600V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
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R6015ANZFU7C8 R6015ANZFU7C8 Rohm Semiconductor R6015ANZ.pdf Description: MOSFET N-CH 600V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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BD45311G-TR BD45311G-TR Rohm Semiconductor datasheet?p=BD45311G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 90ms Minimum
Voltage - Threshold: 3.1V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RBR3L60BDDTE25 rbr3l60bddte25-e.pdf
RBR3L60BDDTE25
Hersteller: Rohm Semiconductor
Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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DTC143ZMFHAT2L datasheet?p=DTC143ZMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143ZMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143ZMFHAT2L datasheet?p=DTC143ZMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143ZMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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48+0.44 EUR
77+0.27 EUR
124+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.096 EUR
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BR93G66FVM-3AGTTR br93g66-3a-e
BR93G66FVM-3AGTTR
Hersteller: Rohm Semiconductor
Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FVM-3AGTTR br93g66-3a-e
BR93G66FVM-3AGTTR
Hersteller: Rohm Semiconductor
Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FJ-3AGTE2 br93g66-3a-e
BR93G66FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR93G66FJ-3AGTE2 br93g66-3a-e
BR93G66FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: MICROWIRE BUS 4KBIT(256X16BIT) E
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BR24G64FJ-3AGTE2 datasheet?p=BR24G64FJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G64FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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BR24G02FJ-3AGTE2 br24g02-3a-e.pdf
BR24G02FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2K I2C 1MHZ 8SOPJ
Produkt ist nicht verfügbar
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BR24G02FJ-3AGTE2 br24g02-3a-e.pdf
BR24G02FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2K I2C 1MHZ 8SOPJ
Produkt ist nicht verfügbar
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DTA143EMFHAT2L datasheet?p=DTA143EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143EMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA143EMFHAT2L datasheet?p=DTA143EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143EMFHAT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 7770 Stücke:
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46+0.46 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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DTA143EU3HZGT106 datasheet?p=DTA143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA143EU3HZGT106 datasheet?p=DTA143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2420 Stücke:
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38+0.57 EUR
63+0.33 EUR
101+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
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DTA143EU3T106 datasheet?p=DTA143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RB063L-30TE25 rb063l-30_datasheet.pdf
RB063L-30TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDS
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RB063L-30TE25 rb063l-30_datasheet.pdf
RB063L-30TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDS
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RSX301L-30TE25 RSX301L-30TE25CT.jpg
RSX301L-30TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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RSX301L-30TE25 RSX301L-30TE25CT.jpg
RSX301L-30TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 1046 Stücke:
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22+0.96 EUR
26+0.82 EUR
100+0.57 EUR
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SML-D14MWT86A datasheet?p=SML-D14MW(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D14MWT86A
Hersteller: Rohm Semiconductor
Description: LED YLW-GRN CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 60mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 571nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3000 Stücke:
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SML-D14MWT86A datasheet?p=SML-D14MW(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D14MWT86A
Hersteller: Rohm Semiconductor
Description: LED YLW-GRN CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 60mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 571nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3360 Stücke:
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35+0.61 EUR
50+0.43 EUR
100+0.3 EUR
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DTC124ECAT116 datasheet?p=DTC124ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC124ECAT116 datasheet?p=DTC124ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
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50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
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2SAR293PFRAT100 datasheet?p=2SAR293PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR293PFRAT100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BD750L5FP-CE2 datasheet?p=BD750L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD750L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 14000 Stücke:
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2000+2.25 EUR
4000+2.2 EUR
6000+2.18 EUR
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BD750L5FP-CE2 datasheet?p=BD750L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD750L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 15054 Stücke:
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5+4.33 EUR
10+3.21 EUR
25+2.93 EUR
100+2.62 EUR
250+2.48 EUR
500+2.4 EUR
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SML-P11YTT86R datasheet?p=SML-P11YT(R)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-P11YTT86R
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1006 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Color: Yellow
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.6mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 586nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
auf Bestellung 2177 Stücke:
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SML-P11YTT86R datasheet?p=SML-P11YT(R)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-P11YTT86R
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Yellow
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.6mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 586nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
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HP8M31TB1 datasheet?p=HP8M31&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8M31TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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HP8M31TB1 datasheet?p=HP8M31&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8M31TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
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SP8M3TB datasheet?p=SP8M3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M3TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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SP8M3FU6TB description SP8M3.pdf
SP8M3FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SP8M3FD5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SP8M3FU6TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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LP8M3FP8TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH SOP8G
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SP8M3FU7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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UFZVFHTE-1720B datasheet?p=UFZVFH20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVFHTE-1720B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW UMD2
Tolerance: ±2.55%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: UMD2
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UFZVFHTE-1720B datasheet?p=UFZVFH20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVFHTE-1720B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW UMD2
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: UMD2
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Qualification: AEC-Q101
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RSA6.1U5FHT108
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3VWM 6SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SMT6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTA115EU3HZGT106 dta115eu3hzgt106-e.pdf
DTA115EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA115EU3HZGT106 dta115eu3hzgt106-e.pdf
DTA115EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RB050LAM-40TFTR datasheet?p=RB050LAM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB050LAM-40TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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RB050LAM-40TFTR datasheet?p=RB050LAM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB050LAM-40TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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SCS306APC9 scs306ap-e.pdf
SCS306APC9
Hersteller: Rohm Semiconductor
Description: DIODE SC SCHKY 650V 6A TO220ACP
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RRE04EA4DFHTR rre04ea4dfh.pdf
RRE04EA4DFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Produkt ist nicht verfügbar
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RRE04EA4DFHTR rre04ea4dfh.pdf
RRE04EA4DFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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BA6209N BA6209%28N%29.pdf
BA6209N
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 6V-18V 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-SIP
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Produkt ist nicht verfügbar
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RB541XNFHTR rb541xnfhtr-e.pdf
RB541XNFHTR
Hersteller: Rohm Semiconductor
Description: ROHM'S SCHOTTKY BARRIER DIODES A
Produkt ist nicht verfügbar
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RB541XNFHTR rb541xnfhtr-e.pdf
RB541XNFHTR
Hersteller: Rohm Semiconductor
Description: ROHM'S SCHOTTKY BARRIER DIODES A
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BZX84C15VLFHT116 datasheet?p=BZX84C15VLFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C15VLFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.7V 250MW SSD3
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C15VLFHT116 datasheet?p=BZX84C15VLFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C15VLFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.7V 250MW SSD3
Tolerance: ±6.12%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
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BZX84C15VLT116 datasheet?p=BZX84C15VL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C15VLT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 250MW SSD3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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R6015KNX r6015knx-e.pdf
R6015KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015KNJTL datasheet?p=R6015KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015KNJTL datasheet?p=R6015KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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10+3.83 EUR
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R6015KNZC17 datasheet?p=R6015KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6015ENZC17 datasheet?p=R6015ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 218 Stücke:
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5+4.84 EUR
30+3.78 EUR
120+3.69 EUR
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R6015ENZM12C8 r6015enzc17-e.pdf
R6015ENZM12C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
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R6015ANZFU7C8 R6015ANZ.pdf
R6015ANZFU7C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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BD45311G-TR datasheet?p=BD45311G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD45311G-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 90ms Minimum
Voltage - Threshold: 3.1V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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