Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (101907) > Seite 802 nach 1699
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS315AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 15A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BD9G201EFJ-LBE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 1.5A 8HTSOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.5A Operating Temperature: -40°C ~ 150°C (TA) Output Configuration: Positive Frequency - Switching: 250kHz ~ 500kHz Voltage - Input (Max): 42V Topology: Buck Supplier Device Package: 8-HTSOP-JES Synchronous Rectifier: Yes Voltage - Output (Max): 42V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BD9G201EFJ-LBE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 1.5A 8HTSOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.5A Operating Temperature: -40°C ~ 150°C (TA) Output Configuration: Positive Frequency - Switching: 250kHz ~ 500kHz Voltage - Input (Max): 42V Topology: Buck Supplier Device Package: 8-HTSOP-JES Synchronous Rectifier: Yes Voltage - Output (Max): 42V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V |
auf Bestellung 11825 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCS230KE2HRC11 | Rohm Semiconductor |
Description: DIODE ARRAY SIC 1200V 15A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCS240KE2HRC11 | Rohm Semiconductor |
Description: DIODE ARRAY SIC 1200V 20A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
UMZ16NFHT106 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 16.18V UMD3Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 16.18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: UMD3 Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
2SCR542F3TR | Rohm Semiconductor |
Description: TRANS NPN 30V 3A HUML2020L3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 250MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
2SA2071P5T100Q | Rohm Semiconductor |
Description: TRANS PNP 60V 3A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SCR341QTR | Rohm Semiconductor |
Description: TRANS NPN 400V 0.1A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V Supplier Device Package: TSMT6 (SC-95) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
2SAR502U3T106 | Rohm Semiconductor |
Description: TRANS PNP 30V 0.5A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SCR542F3TR | Rohm Semiconductor |
Description: TRANS NPN 30V 3A HUML2020L3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 250MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SA2071P5T100Q | Rohm Semiconductor |
Description: TRANS PNP 60V 3A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 2021 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SCR341QTR | Rohm Semiconductor |
Description: TRANS NPN 400V 0.1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V Supplier Device Package: TSMT6 (SC-95) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SAR502U3T106 | Rohm Semiconductor |
Description: TRANS PNP 30V 0.5A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
auf Bestellung 7919 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
KX127-1068 | Rohm Semiconductor |
Description: ACCELEROMETER 2-8G I2C/SPI 12LGAPackaging: Tape & Reel (TR) Features: Selectable Scale Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z) Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
KX127-1068 | Rohm Semiconductor |
Description: ACCELEROMETER 2-8G I2C/SPI 12LGAPackaging: Cut Tape (CT) Features: Selectable Scale Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z) Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BA12003DF-ZE2 | Rohm Semiconductor |
Description: IC DARLINGTON ARRAY 7/0 16SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BA3121F-BZE2 | Rohm Semiconductor |
Description: IC AMP CLASS AB STEREO 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C Voltage - Supply: 4V ~ 18V Supplier Device Package: 8-SOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BR25G320FJ-E2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BU4052BCF-BZE2 | Rohm Semiconductor | Description: IC MUX CMOS HV SOP16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BU4066BCF-BZE2 | Rohm Semiconductor |
Description: IC SWITCH SPST-NOX4 280OHM 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 280Ohm Supplier Device Package: 14-SOP Voltage - Supply, Single (V+): 3V ~ 18V Crosstalk: -50dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 300nA Part Status: Active Number of Circuits: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BU4094BCF-BZE2 | Rohm Semiconductor |
Description: IC SR TRI-STATE 8BIT 16-SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 16V Supplier Device Package: 16-SOP Part Status: Active Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
LM339F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4 GEN PUR 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 32V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BA12004DF-ZE2 | Rohm Semiconductor |
Description: IC DARLINGTON ARRAY 7/0 16SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BA4560N-BZ | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SIP Packaging: Tube Package / Case: 8-SIP Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 4mA Slew Rate: 4V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 50 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-SIP Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 25 mA Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BSS4130T116 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BSS63T116 | Rohm Semiconductor |
Description: TRANS PNP 100V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BSS64T116 | Rohm Semiconductor |
Description: TRANS NPN 100V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
US6X8TR | Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTORPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
UML23NTR | Rohm Semiconductor |
Description: NPN GENERAL PURPOSE AMPLIFICATIO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
VT6T12T2R | Rohm Semiconductor |
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BSS4130T116 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BSS63T116 | Rohm Semiconductor |
Description: TRANS PNP 100V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
US6X8TR | Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTORPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
UML23NTR | Rohm Semiconductor |
Description: NPN GENERAL PURPOSE AMPLIFICATIO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
VT6T12T2R | Rohm Semiconductor |
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN |
auf Bestellung 7875 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
UML23NTR | Rohm Semiconductor |
Description: NPN GENERAL PURPOSE AMPLIFICATIO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BD41000AFJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER 1/1 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 7V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: CXPI Supplier Device Package: 8-SOP-J Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SCT2080KEHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 40A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17564 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3017ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 118A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 118A (Tc) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Power Dissipation (Max): 427W Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3022ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 93A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3022KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 95A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 427W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1127 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3030ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3030KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 72A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 339W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3040KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 55A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3060ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 39A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3080ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 30A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3080KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 31A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 642 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3105KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 24A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3120ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 103W Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCT3160KLHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 17A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 103W Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-247N Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 592 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BD41000AFJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER 1/1 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 7V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: CXPI Supplier Device Package: 8-SOP-J Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BA178M07FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 7V 500MA TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 22V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 7V Part Status: Active PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Current - Supply (Max): 6 mA |
auf Bestellung 936 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BD4860FVE-TR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5VSOFPackaging: Cut Tape (CT) Package / Case: SOT-665 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 6V Supplier Device Package: 5-VSOF Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3190 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BU4933FVE-TR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5VSOFPackaging: Cut Tape (CT) Package / Case: SOT-665 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 3.3V Supplier Device Package: 5-VSOF DigiKey Programmable: Not Verified |
auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DTA114EEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SML-A12Y8TT86 | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1611 SMD R/APackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Yellow Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 63mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 590nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
auf Bestellung 1147 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SML-H12U8TT86 | Rohm Semiconductor |
Description: LED RED CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Red Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 40mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 620nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SML-P11DTT86R | Rohm Semiconductor |
Description: LED ORANGE CLEAR 1006 SMDPackaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Color: Orange Size / Dimension: 1.00mm L x 0.60mm W Mounting Type: Surface Mount Millicandela Rating: 7.3mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 1.9V Lens Color: Colorless Current - Test: 1mA Height (Max): 0.25mm Wavelength - Dominant: 605nm Supplier Device Package: 1006 (0402) Lens Transparency: Clear Part Status: Active Lens Style: Square with Flat Top Lens Size: 0.60mm |
auf Bestellung 8702 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
UDZVTE-1739B | Rohm Semiconductor |
Description: DIODE ZENER 39V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 39 V Supplier Device Package: UMD2 Power - Max: 200 mW |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCS315AJTLL |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.35 EUR |
| 10+ | 8.87 EUR |
| 100+ | 7.39 EUR |
| BD9G201EFJ-LBE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 2.02 EUR |
| 5000+ | 1.98 EUR |
| 7500+ | 1.95 EUR |
| BD9G201EFJ-LBE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 11825 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.89 EUR |
| 10+ | 2.89 EUR |
| 25+ | 2.64 EUR |
| 100+ | 2.36 EUR |
| 250+ | 2.23 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.09 EUR |
| SCS230KE2HRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.64 EUR |
| SCS240KE2HRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 38.21 EUR |
| 30+ | 24.5 EUR |
| 120+ | 22.98 EUR |
| UMZ16NFHT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 16.18V UMD3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16.18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD3
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER ARRAY 16.18V UMD3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16.18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD3
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SCR542F3TR |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS NPN 30V 3A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA2071P5T100Q |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.43 EUR |
| 2SCR341QTR |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 400V 0.1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Supplier Device Package: TSMT6 (SC-95)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
Description: TRANS NPN 400V 0.1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Supplier Device Package: TSMT6 (SC-95)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SAR502U3T106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 2SCR542F3TR |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS NPN 30V 3A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 2SA2071P5T100Q |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 2021 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 2SCR341QTR |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 400V 0.1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Supplier Device Package: TSMT6 (SC-95)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
Description: TRANS NPN 400V 0.1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Supplier Device Package: TSMT6 (SC-95)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 20+ | 0.91 EUR |
| 100+ | 0.59 EUR |
| 2SAR502U3T106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 7919 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| KX127-1068 |
![]() |
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Selectable Scale
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Selectable Scale
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KX127-1068 |
![]() |
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Selectable Scale
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Selectable Scale
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA12003DF-ZE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA3121F-BZE2 |
Hersteller: Rohm Semiconductor
Description: IC AMP CLASS AB STEREO 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 4V ~ 18V
Supplier Device Package: 8-SOP
Part Status: Active
Description: IC AMP CLASS AB STEREO 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 4V ~ 18V
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR25G320FJ-E2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU4052BCF-BZE2 |
Hersteller: Rohm Semiconductor
Description: IC MUX CMOS HV SOP16
Description: IC MUX CMOS HV SOP16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU4066BCF-BZE2 |
Hersteller: Rohm Semiconductor
Description: IC SWITCH SPST-NOX4 280OHM 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 280OHM 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU4094BCF-BZE2 |
Hersteller: Rohm Semiconductor
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 16V
Supplier Device Package: 16-SOP
Part Status: Active
Number of Bits per Element: 8
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 16V
Supplier Device Package: 16-SOP
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM339F-E2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.62 EUR |
| BA12004DF-ZE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA4560N-BZ |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SIP
Packaging: Tube
Package / Case: 8-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4mA
Slew Rate: 4V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 50 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 8SIP
Packaging: Tube
Package / Case: 8-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4mA
Slew Rate: 4V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 50 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS4130T116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS63T116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS64T116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| US6X8TR |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| UML23NTR |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
Description: NPN GENERAL PURPOSE AMPLIFICATIO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VT6T12T2R |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS4130T116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS63T116 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| US6X8TR |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 23+ | 0.8 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.39 EUR |
| UML23NTR |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
Description: NPN GENERAL PURPOSE AMPLIFICATIO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VT6T12T2R |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
auf Bestellung 7875 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| UML23NTR |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
Description: NPN GENERAL PURPOSE AMPLIFICATIO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BD41000AFJ-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT2080KEHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17564 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 40.46 EUR |
| 30+ | 37.15 EUR |
| SCT3017ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 163.64 EUR |
| SCT3022ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2246 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 113.96 EUR |
| 30+ | 99.72 EUR |
| 120+ | 92.6 EUR |
| SCT3022KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1127 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 170.97 EUR |
| SCT3030ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 57.62 EUR |
| 30+ | 57.57 EUR |
| SCT3030KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 93.12 EUR |
| 30+ | 93.11 EUR |
| SCT3040KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 95.37 EUR |
| 10+ | 84.99 EUR |
| 100+ | 74.6 EUR |
| SCT3060ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 36.98 EUR |
| 30+ | 24.33 EUR |
| 120+ | 23.73 EUR |
| SCT3080ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.52 EUR |
| 30+ | 18.04 EUR |
| SCT3080KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.89 EUR |
| 30+ | 26.14 EUR |
| SCT3105KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 24A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 24A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.15 EUR |
| 30+ | 19.65 EUR |
| 120+ | 18.82 EUR |
| SCT3120ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.01 EUR |
| 30+ | 7.76 EUR |
| SCT3160KLHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.87 EUR |
| 30+ | 15.35 EUR |
| 120+ | 15.13 EUR |
| BD41000AFJ-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.12 EUR |
| 10+ | 3.06 EUR |
| 25+ | 2.8 EUR |
| 100+ | 2.51 EUR |
| BA178M07FP-E2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 7V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 22V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 7V
Part Status: Active
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 7V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 22V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 7V
Part Status: Active
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 12+ | 1.53 EUR |
| 25+ | 1.46 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.12 EUR |
| 500+ | 0.99 EUR |
| BD4860FVE-TR |
![]() |
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 6V
Supplier Device Package: 5-VSOF
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 6V
Supplier Device Package: 5-VSOF
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3190 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.5 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.38 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.33 EUR |
| BU4933FVE-TR |
![]() |
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 18+ | 1 EUR |
| 25+ | 0.94 EUR |
| 100+ | 0.77 EUR |
| 250+ | 0.71 EUR |
| DTA114EEFRATL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| SML-A12Y8TT86 |
![]() |
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Yellow
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED YELLOW CLEAR 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Yellow
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
auf Bestellung 1147 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.22 EUR |
| SML-H12U8TT86 |
![]() |
Hersteller: Rohm Semiconductor
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 620nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 620nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| SML-P11DTT86R |
![]() |
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Orange
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
Description: LED ORANGE CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Orange
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 1mA
Height (Max): 0.25mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
auf Bestellung 8702 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |
| UDZVTE-1739B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 39V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: UMD2
Power - Max: 200 mW
Description: DIODE ZENER 39V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: UMD2
Power - Max: 200 mW
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |





























