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BD42500G-CTR BD42500G-CTR Rohm Semiconductor datasheet?p=BD42500G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR POS ADJ 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 42V
Current - Supply: 80µA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
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BD48E28G-MTR BD48E28G-MTR Rohm Semiconductor datasheet?p=BD48E28G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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BD48E40G-MTR BD48E40G-MTR Rohm Semiconductor datasheet?p=BD48E40G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BD48E43G-MTR BD48E43G-MTR Rohm Semiconductor datasheet?p=BD48E43G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.3V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BD48E44G-MTR BD48E44G-MTR Rohm Semiconductor bd48xxg-m-e Description: IC SUPERVISOR 1 CHANNEL 5SSOP
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BR25H128F-2ACE2 BR25H128F-2ACE2 Rohm Semiconductor br25h128xxx-2ac-e Description: MEMORY EEPROM
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BR25H128FJ-2ACE2 BR25H128FJ-2ACE2 Rohm Semiconductor br25h128xxx-2ac-e Description: MEMORY EEPROM
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BR25H640FJ-2ACE2 BR25H640FJ-2ACE2 Rohm Semiconductor datasheet?p=BR25H640FJ-2AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BU28JA2VG-CGTR BU28JA2VG-CGTR Rohm Semiconductor buxxja2vg-c-e Description: PWR MGMT LINEAR REGULATOR
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BM61S40RFV-CE2 BM61S40RFV-CE2 Rohm Semiconductor datasheet?p=BM61S40RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM61M41RFV-CE2 BM61M41RFV-CE2 Rohm Semiconductor datasheet?p=BM61M41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM60213FV-CE2 BM60213FV-CE2 Rohm Semiconductor datasheet?p=BM60213FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BM61S40RFV-CE2 BM61S40RFV-CE2 Rohm Semiconductor datasheet?p=BM61S40RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Qualification: AEC-Q100
auf Bestellung 2186 Stücke:
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BM61S41RFV-CE2 BM61S41RFV-CE2 Rohm Semiconductor datasheet?p=BM61S41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Qualification: AEC-Q100
auf Bestellung 14812 Stücke:
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BM61M41RFV-CE2 BM61M41RFV-CE2 Rohm Semiconductor datasheet?p=BM61M41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Qualification: AEC-Q100
auf Bestellung 1359 Stücke:
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BM60213FV-CE2 BM60213FV-CE2 Rohm Semiconductor datasheet?p=BM60213FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2051 Stücke:
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2+11.85 EUR
10+8.02 EUR
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100+5.91 EUR
250+5.37 EUR
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BM61S41RFV-CE2 BM61S41RFV-CE2 Rohm Semiconductor datasheet?p=BM61S41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Voltage - Output Supply: 16V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 60ns
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 10-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4A, 4A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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1500+4.84 EUR
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RGS50TSX2DHRC11 RGS50TSX2DHRC11 Rohm Semiconductor datasheet?p=RGS50TSX2DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 1200V 50A TO-247N
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Td (on/off) @ 25°C: 37ns/140ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 182 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 395 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 67 nC
Test Condition: 600V, 25A, 10Ohm, 15V
auf Bestellung 335 Stücke:
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RGS50TSX2HRC11 RGS50TSX2HRC11 Rohm Semiconductor datasheet?p=RGS50TSX2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
auf Bestellung 446 Stücke:
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RGS80TSX2DHRC11 RGS80TSX2DHRC11 Rohm Semiconductor datasheet?p=RGS80TSX2DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 1200V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 624 Stücke:
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RGS00TS65HRC11 RGS00TS65HRC11 Rohm Semiconductor datasheet?p=RGS00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Produkt ist nicht verfügbar
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RGS80TSX2HRC11 RGS80TSX2HRC11 Rohm Semiconductor datasheet?p=RGS80TSX2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 434 Stücke:
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1+23.84 EUR
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RGS80TS65HRC11 RGS80TS65HRC11 Rohm Semiconductor datasheet?p=RGS80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
auf Bestellung 163 Stücke:
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2+12.07 EUR
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120+8.63 EUR
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RGS60TS65DHRC11 RGS60TS65DHRC11 Rohm Semiconductor datasheet?p=RGS60TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
auf Bestellung 450 Stücke:
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2+14.8 EUR
30+8.63 EUR
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R6047ENZ4C13 R6047ENZ4C13 Rohm Semiconductor datasheet?p=R6047ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6020KNZ4C13 R6020KNZ4C13 Rohm Semiconductor datasheet?p=R6020KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 410 Stücke:
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120+8.85 EUR
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R6047KNZ4C13 R6047KNZ4C13 Rohm Semiconductor datasheet?p=R6047KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6030ENZ4C13 R6030ENZ4C13 Rohm Semiconductor datasheet?p=R6030ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RHK003N06FRAT146 RHK003N06FRAT146 Rohm Semiconductor datasheet?p=RHK003N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Qualification: AEC-Q101
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RHK005N03FRAT146 RHK005N03FRAT146 Rohm Semiconductor rhk005n03fra-e Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Produkt ist nicht verfügbar
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RHU002N06FRAT106 RHU002N06FRAT106 Rohm Semiconductor datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RHK005N03FRAT146 RHK005N03FRAT146 Rohm Semiconductor rhk005n03fra-e Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 382 Stücke:
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RHK003N06FRAT146 RHK003N06FRAT146 Rohm Semiconductor datasheet?p=RHK003N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Qualification: AEC-Q101
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100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
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RHU002N06FRAT106 RHU002N06FRAT106 Rohm Semiconductor datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Qualification: AEC-Q101
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ML62Q1700-NNNTBZ0BX ML62Q1700-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1700&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ML62Q1710-NNNTBZ0BX ML62Q1710-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1710&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ML62Q1712-NNNTBZ0BX ML62Q1712-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1712&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ML62Q1702-NNNTBZ0BX ML62Q1702-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1702&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1720-NNNTBZ0BX ML62Q1720-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1720&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 64
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ML62Q1724-NNNTBZ0BX ML62Q1724-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1724&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ML62Q1720-NNNTBZ0BX ML62Q1720-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1720&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 64
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
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2+10.6 EUR
10+8.79 EUR
25+8.16 EUR
100+7.38 EUR
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ML62Q1702-NNNTBZ0BX ML62Q1702-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1702&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 90 Stücke:
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3+10.33 EUR
10+8.58 EUR
25+7.97 EUR
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ML62Q1710-NNNTBZ0BX ML62Q1710-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1710&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.82 EUR
10+8.15 EUR
25+7.57 EUR
100+6.84 EUR
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ML62Q1712-NNNTBZ0BX ML62Q1712-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1712&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.85 EUR
10+9.01 EUR
25+8.37 EUR
100+7.56 EUR
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ML62Q1700-NNNTBZ0BX ML62Q1700-NNNTBZ0BX Rohm Semiconductor datasheet?p=ML62Q1700&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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R6009END3TL1 R6009END3TL1 Rohm Semiconductor datasheet?p=R6009END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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R6507ENJTL R6507ENJTL Rohm Semiconductor datasheet?p=R6507ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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R6009END3TL1 R6009END3TL1 Rohm Semiconductor datasheet?p=R6009END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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R6507ENJTL R6507ENJTL Rohm Semiconductor datasheet?p=R6507ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DTB113ECHZGT116 DTB113ECHZGT116 Rohm Semiconductor datasheet?p=DTB113ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTB113ECHZG IS THE HIGH RELIABIL
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTD123YCHZGT116 DTD123YCHZGT116 Rohm Semiconductor datasheet?p=DTD123YCHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RU1L002SNTL RU1L002SNTL Rohm Semiconductor datasheet?p=RU1L002SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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UMD3NFHATR UMD3NFHATR Rohm Semiconductor datasheet?p=UMD3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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UMZ1NFHATR UMZ1NFHATR Rohm Semiconductor datasheet?p=UMZ1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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RU1L002SNTL RU1L002SNTL Rohm Semiconductor datasheet?p=RU1L002SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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DTD123YCHZGT116 DTD123YCHZGT116 Rohm Semiconductor datasheet?p=DTD123YCHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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UMZ1NFHATR UMZ1NFHATR Rohm Semiconductor datasheet?p=UMZ1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DTB113ECHZGT116 DTB113ECHZGT116 Rohm Semiconductor datasheet?p=DTB113ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTB113ECHZG IS THE HIGH RELIABIL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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UMD3NFHATR UMD3NFHATR Rohm Semiconductor datasheet?p=UMD3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BD53E30G-MTR BD53E30G-MTR Rohm Semiconductor bd52exxg-m-e Description: IC SUPERVISOR 1 CHANNEL 5SSOP
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BD42500G-CTR datasheet?p=BD42500G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD42500G-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 42V
Current - Supply: 80µA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
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BD48E28G-MTR datasheet?p=BD48E28G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD48E28G-MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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BD48E40G-MTR datasheet?p=BD48E40G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD48E40G-MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BD48E43G-MTR datasheet?p=BD48E43G-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD48E43G-MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.3V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BD48E44G-MTR bd48xxg-m-e
BD48E44G-MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
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BR25H128F-2ACE2 br25h128xxx-2ac-e
BR25H128F-2ACE2
Hersteller: Rohm Semiconductor
Description: MEMORY EEPROM
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BR25H128FJ-2ACE2 br25h128xxx-2ac-e
BR25H128FJ-2ACE2
Hersteller: Rohm Semiconductor
Description: MEMORY EEPROM
Produkt ist nicht verfügbar
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BR25H640FJ-2ACE2 datasheet?p=BR25H640FJ-2AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H640FJ-2ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BU28JA2VG-CGTR buxxja2vg-c-e
BU28JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: PWR MGMT LINEAR REGULATOR
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BM61S40RFV-CE2 datasheet?p=BM61S40RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61S40RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM61M41RFV-CE2 datasheet?p=BM61M41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61M41RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM60213FV-CE2 datasheet?p=BM60213FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM60213FV-CE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2000+4.55 EUR
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BM61S40RFV-CE2 datasheet?p=BM61S40RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61S40RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Qualification: AEC-Q100
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BM61S41RFV-CE2 datasheet?p=BM61S41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61S41RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Qualification: AEC-Q100
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BM61M41RFV-CE2 datasheet?p=BM61M41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61M41RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Qualification: AEC-Q100
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2+11.66 EUR
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BM60213FV-CE2 datasheet?p=BM60213FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM60213FV-CE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+11.85 EUR
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BM61S41RFV-CE2 datasheet?p=BM61S41RFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM61S41RFV-CE2
Hersteller: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Voltage - Output Supply: 16V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 60ns
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 10-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4A, 4A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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1500+4.84 EUR
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RGS50TSX2DHRC11 datasheet?p=RGS50TSX2DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS50TSX2DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 50A TO-247N
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Td (on/off) @ 25°C: 37ns/140ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 182 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 395 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 67 nC
Test Condition: 600V, 25A, 10Ohm, 15V
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RGS50TSX2HRC11 datasheet?p=RGS50TSX2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS50TSX2HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
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RGS80TSX2DHRC11 datasheet?p=RGS80TSX2DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TSX2DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 624 Stücke:
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RGS00TS65HRC11 datasheet?p=RGS00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS00TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Produkt ist nicht verfügbar
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RGS80TSX2HRC11 datasheet?p=RGS80TSX2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TSX2HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 434 Stücke:
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RGS80TS65HRC11 datasheet?p=RGS80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
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RGS60TS65DHRC11 datasheet?p=RGS60TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS60TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
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R6047ENZ4C13 datasheet?p=R6047ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6047ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6020KNZ4C13 datasheet?p=R6020KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 410 Stücke:
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R6047KNZ4C13 datasheet?p=R6047KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6047KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6030ENZ4C13 datasheet?p=R6030ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+20.73 EUR
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RHK003N06FRAT146 datasheet?p=RHK003N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHK003N06FRAT146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.24 EUR
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RHK005N03FRAT146 rhk005n03fra-e
RHK005N03FRAT146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Produkt ist nicht verfügbar
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RHU002N06FRAT106 datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHU002N06FRAT106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RHK005N03FRAT146 rhk005n03fra-e
RHK005N03FRAT146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 382 Stücke:
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22+0.96 EUR
28+0.75 EUR
100+0.45 EUR
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RHK003N06FRAT146 datasheet?p=RHK003N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHK003N06FRAT146
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5740 Stücke:
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AnzahlPrivatkunde
20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
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RHU002N06FRAT106 datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHU002N06FRAT106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Qualification: AEC-Q101
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ML62Q1700-NNNTBZ0BX datasheet?p=ML62Q1700&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1700-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1710-NNNTBZ0BX datasheet?p=ML62Q1710&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1710-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1712-NNNTBZ0BX datasheet?p=ML62Q1712&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1712-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1702-NNNTBZ0BX datasheet?p=ML62Q1702&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1702-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1720-NNNTBZ0BX datasheet?p=ML62Q1720&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1720-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 64
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1724-NNNTBZ0BX datasheet?p=ML62Q1724&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1724-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML62Q1720-NNNTBZ0BX datasheet?p=ML62Q1720&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1720-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 64
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
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AnzahlPrivatkunde
2+10.6 EUR
10+8.79 EUR
25+8.16 EUR
100+7.38 EUR
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ML62Q1702-NNNTBZ0BX datasheet?p=ML62Q1702&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1702-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 90 Stücke:
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AnzahlPrivatkunde
3+10.33 EUR
10+8.58 EUR
25+7.97 EUR
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ML62Q1710-NNNTBZ0BX datasheet?p=ML62Q1710&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1710-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
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AnzahlPrivatkunde
3+9.82 EUR
10+8.15 EUR
25+7.57 EUR
100+6.84 EUR
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ML62Q1712-NNNTBZ0BX datasheet?p=ML62Q1712&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1712-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
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AnzahlPrivatkunde
2+10.85 EUR
10+9.01 EUR
25+8.37 EUR
100+7.56 EUR
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ML62Q1700-NNNTBZ0BX datasheet?p=ML62Q1700&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML62Q1700-NNNTBZ0BX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.29 EUR
10+7.74 EUR
25+7.18 EUR
100+6.47 EUR
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R6009END3TL1 datasheet?p=R6009END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009END3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.15 EUR
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R6507ENJTL datasheet?p=R6507ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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R6009END3TL1 datasheet?p=R6009END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009END3TL1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.77 EUR
10+3.97 EUR
100+3.15 EUR
500+2.68 EUR
1000+2.27 EUR
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R6507ENJTL datasheet?p=R6507ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 998 Stücke:
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AnzahlPrivatkunde
3+8.27 EUR
10+5.44 EUR
100+3.83 EUR
500+3.14 EUR
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DTB113ECHZGT116 datasheet?p=DTB113ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB113ECHZGT116
Hersteller: Rohm Semiconductor
Description: DTB113ECHZG IS THE HIGH RELIABIL
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTD123YCHZGT116 datasheet?p=DTD123YCHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD123YCHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RU1L002SNTL datasheet?p=RU1L002SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RU1L002SNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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UMD3NFHATR datasheet?p=UMD3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD3NFHATR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UMZ1NFHATR datasheet?p=UMZ1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ1NFHATR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3000+0.2 EUR
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RU1L002SNTL datasheet?p=RU1L002SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RU1L002SNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
auf Bestellung 10114 Stücke:
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40+0.52 EUR
65+0.32 EUR
105+0.2 EUR
500+0.14 EUR
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DTD123YCHZGT116 datasheet?p=DTD123YCHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD123YCHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2372 Stücke:
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42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
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UMZ1NFHATR datasheet?p=UMZ1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ1NFHATR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3392 Stücke:
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24+0.9 EUR
38+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
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DTB113ECHZGT116 datasheet?p=DTB113ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB113ECHZGT116
Hersteller: Rohm Semiconductor
Description: DTB113ECHZG IS THE HIGH RELIABIL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 903 Stücke:
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25+0.86 EUR
33+0.64 EUR
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UMD3NFHATR datasheet?p=UMD3NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD3NFHATR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1321 Stücke:
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23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
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BD53E30G-MTR bd52exxg-m-e
BD53E30G-MTR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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