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DTC124EU3HZGT106 DTC124EU3HZGT106 Rohm Semiconductor datasheet?p=DTC124EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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DTC143EU3HZGT106 DTC143EU3HZGT106 Rohm Semiconductor datasheet?p=DTC143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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DTC143XU3HZGT106 DTC143XU3HZGT106 Rohm Semiconductor datasheet?p=DTC143XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC144EU3HZGT106 DTC144EU3HZGT106 Rohm Semiconductor datasheet?p=DTC144EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTD113EKFRAT146 DTD113EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DTD143EKFRAT146 DTD143EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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29+0.73 EUR
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DTC124TCAT116 DTC124TCAT116 Rohm Semiconductor dtc124tcat116-e.pdf Description: DTC124TCA IS AN DIGITAL TRANSIST
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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46+0.45 EUR
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500+0.19 EUR
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DTC144TCAT116 DTC144TCAT116 Rohm Semiconductor dtc144tcat116-e.pdf Description: TRANS PREBIAS NPN 50V 0.1A SST3
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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63+0.33 EUR
101+0.21 EUR
500+0.15 EUR
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DTC144VCAT116 DTC144VCAT116 Rohm Semiconductor dtc144vcat116-e.pdf Description: DTC144VCA IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTC144WCAT116 DTC144WCAT116 Rohm Semiconductor datasheet?p=DTC144WCA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 1588 Stücke:
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66+0.32 EUR
106+0.2 EUR
500+0.14 EUR
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SMLD12BN1WT86 SMLD12BN1WT86 Rohm Semiconductor datasheet?p=SMLD12BN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE DIFFUSED 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Blue
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 470nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SMLD12WBN1W1 SMLD12WBN1W1 Rohm Semiconductor datasheet?p=SMLD12WBN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED WHITE 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SCS310AJTLL SCS310AJTLL Rohm Semiconductor datasheet?p=SCS310AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 10A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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SCS312AJTLL SCS312AJTLL Rohm Semiconductor datasheet?p=SCS312AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 12A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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SCS315AJTLL SCS315AJTLL Rohm Semiconductor datasheet?p=SCS315AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Produkt ist nicht verfügbar
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SCS312AMC SCS312AMC Rohm Semiconductor datasheet?p=SCS312AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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SCS315AMC SCS315AMC Rohm Semiconductor datasheet?p=SCS315AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 15A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
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SCS320AMC SCS320AMC Rohm Semiconductor datasheet?p=SCS320AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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SMLD12WBN1W1 SMLD12WBN1W1 Rohm Semiconductor datasheet?p=SMLD12WBN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED WHITE 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SCS310AJTLL SCS310AJTLL Rohm Semiconductor datasheet?p=SCS310AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 10A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 518 Stücke:
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SCS312AJTLL SCS312AJTLL Rohm Semiconductor datasheet?p=SCS312AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 12A LPTL
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LPTL
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SCS315AJTLL SCS315AJTLL Rohm Semiconductor datasheet?p=SCS315AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 400 Stücke:
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BD9G201EFJ-LBE2 BD9G201EFJ-LBE2 Rohm Semiconductor datasheet?p=BD9G201EFJ-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
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BD9G201EFJ-LBE2 BD9G201EFJ-LBE2 Rohm Semiconductor datasheet?p=BD9G201EFJ-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
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SCS230KE2HRC11 SCS230KE2HRC11 Rohm Semiconductor datasheet?p=SCS230KE2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 1200V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
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SCS240KE2HRC11 SCS240KE2HRC11 Rohm Semiconductor datasheet?p=SCS240KE2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
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UMZ16NFHT106 UMZ16NFHT106 Rohm Semiconductor datasheet?p=UMZ16NFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 16.18V UMD3
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 16.18 V
Qualification: AEC-Q101
Grade: Automotive
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2SCR542F3TR 2SCR542F3TR Rohm Semiconductor datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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2SA2071P5T100Q 2SA2071P5T100Q Rohm Semiconductor 2sa2071p5.pdf Description: TRANS PNP 60V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SCR341QTR 2SCR341QTR Rohm Semiconductor datasheet?p=2SCR341Q&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 400V 0.1A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TSMT6 (SC-95)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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2SAR502U3T106 2SAR502U3T106 Rohm Semiconductor datasheet?p=2SAR502U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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2SCR542F3TR 2SCR542F3TR Rohm Semiconductor datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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2SA2071P5T100Q 2SA2071P5T100Q Rohm Semiconductor 2sa2071p5.pdf Description: TRANS PNP 60V 3A MPT3
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
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2SCR341QTR 2SCR341QTR Rohm Semiconductor datasheet?p=2SCR341Q&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 400V 0.1A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TSMT6 (SC-95)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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2SAR502U3T106 2SAR502U3T106 Rohm Semiconductor datasheet?p=2SAR502U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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KX127-1068 KX127-1068 Rohm Semiconductor KX127-1068-Specifications-Rev-2.0.pdf Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Supplier Device Package: 12-LGA (2x2)
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Acceleration Range: ±2g, 4g, 8g
Axis: X, Y, Z
Type: Digital
Mounting Type: Surface Mount
Output Type: I2C, SPI
Package / Case: 12-VFLGA
Features: Selectable Scale
Packaging: Tape & Reel (TR)
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KX127-1068 KX127-1068 Rohm Semiconductor KX127-1068-Specifications-Rev-2.0.pdf Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Supplier Device Package: 12-LGA (2x2)
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Acceleration Range: ±2g, 4g, 8g
Axis: X, Y, Z
Type: Digital
Mounting Type: Surface Mount
Output Type: I2C, SPI
Package / Case: 12-VFLGA
Features: Selectable Scale
Packaging: Cut Tape (CT)
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BA12003DF-ZE2 BA12003DF-ZE2 Rohm Semiconductor ba1200xdf-z-e.pdf Description: IC DARLINGTON ARRAY 7/0 16SOP
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BA3121F-BZE2 BA3121F-BZE2 Rohm Semiconductor Description: IC AMP CLASS AB STEREO 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 4V ~ 18V
Supplier Device Package: 8-SOP
Part Status: Active
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BR25G320FJ-E2 BR25G320FJ-E2 Rohm Semiconductor Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BU4052BCF-BZE2 BU4052BCF-BZE2 Rohm Semiconductor Description: IC MUX CMOS HV SOP16
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BU4066BCF-BZE2 Rohm Semiconductor Description: IC SWITCH SPST-NOX4 280OHM 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 4
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BU4094BCF-BZE2 BU4094BCF-BZE2 Rohm Semiconductor Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 16V
Supplier Device Package: 16-SOP
Part Status: Active
Number of Bits per Element: 8
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LM339F-E2 LM339F-E2 Rohm Semiconductor datasheet?p=LM339F&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC COMPARATOR 4CH 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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BA12004DF-ZE2 BA12004DF-ZE2 Rohm Semiconductor ba1200xdf-z-e.pdf Description: IC DARLINGTON ARRAY 7/0 16SOP
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BA4560N-BZ Rohm Semiconductor Description: IC OPAMP GP 2 CIRCUIT 8SIP
Current - Supply: 4mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-SIP
Packaging: Tube
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 8 V
Current - Output / Channel: 25 mA
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 8-SIP
Voltage - Input Offset: 500 µV
Current - Input Bias: 50 nA
Gain Bandwidth Product: 10 MHz
Slew Rate: 4V/µs
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BSS4130T116 BSS4130T116 Rohm Semiconductor BSS4130.pdf Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BSS63T116 BSS63T116 Rohm Semiconductor DS_846_BSS63.pdf Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
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BSS64T116 BSS64T116 Rohm Semiconductor DS_846_BSS64.pdf Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
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US6X8TR US6X8TR Rohm Semiconductor datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
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UML23NTR UML23NTR Rohm Semiconductor eml22-uml23n Description: NPN GENERAL PURPOSE AMPLIFICATIO
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VT6T12T2R VT6T12T2R Rohm Semiconductor vt6t12.pdf Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
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BSS63T116 BSS63T116 Rohm Semiconductor DS_846_BSS63.pdf Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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US6X8TR US6X8TR Rohm Semiconductor datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
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UML23NTR UML23NTR Rohm Semiconductor eml22-uml23n Description: NPN GENERAL PURPOSE AMPLIFICATIO
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VT6T12T2R VT6T12T2R Rohm Semiconductor vt6t12.pdf Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
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UML23NTR UML23NTR Rohm Semiconductor eml22-uml23n Description: NPN GENERAL PURPOSE AMPLIFICATIO
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BD41000AFJ-CE2 BD41000AFJ-CE2 Rohm Semiconductor datasheet?p=BD41000AFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SCT2080KEHRC11 SCT2080KEHRC11 Rohm Semiconductor datasheet?p=SCT2080KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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SCT3017ALHRC11 SCT3017ALHRC11 Rohm Semiconductor datasheet?p=SCT3017ALHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 118A TO247N
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Power Dissipation (Max): 427W
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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DTC124EU3HZGT106 datasheet?p=DTC124EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC143EU3HZGT106 datasheet?p=DTC143EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC143XU3HZGT106 datasheet?p=DTC143XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC144EU3HZGT106 datasheet?p=DTC144EU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144EU3HZGT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTD113EKFRAT146
DTD113EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DTD143EKFRAT146
DTD143EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTC124TCAT116 dtc124tcat116-e.pdf
DTC124TCAT116
Hersteller: Rohm Semiconductor
Description: DTC124TCA IS AN DIGITAL TRANSIST
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTC144TCAT116 dtc144tcat116-e.pdf
DTC144TCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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39+0.55 EUR
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DTC144VCAT116 dtc144vcat116-e.pdf
DTC144VCAT116
Hersteller: Rohm Semiconductor
Description: DTC144VCA IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTC144WCAT116 datasheet?p=DTC144WCA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC144WCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 1588 Stücke:
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SMLD12BN1WT86 datasheet?p=SMLD12BN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLD12BN1WT86
Hersteller: Rohm Semiconductor
Description: LED BLUE DIFFUSED 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Blue
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 470nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SMLD12WBN1W1 datasheet?p=SMLD12WBN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLD12WBN1W1
Hersteller: Rohm Semiconductor
Description: LED WHITE 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SCS310AJTLL datasheet?p=SCS310AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS310AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 10A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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SCS312AJTLL datasheet?p=SCS312AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS312AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 12A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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SCS315AJTLL datasheet?p=SCS315AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS315AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Produkt ist nicht verfügbar
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SCS312AMC datasheet?p=SCS312AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS312AMC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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SCS315AMC datasheet?p=SCS315AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS315AMC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
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2+12.7 EUR
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SCS320AMC datasheet?p=SCS320AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS320AMC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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SMLD12WBN1W1 datasheet?p=SMLD12WBN1W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLD12WBN1W1
Hersteller: Rohm Semiconductor
Description: LED WHITE 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.65mm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 12361 Stücke:
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32+0.67 EUR
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SCS310AJTLL datasheet?p=SCS310AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS310AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 10A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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SCS312AJTLL datasheet?p=SCS312AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS312AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 12A LPTL
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LPTL
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 849 Stücke:
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SCS315AJTLL datasheet?p=SCS315AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS315AJTLL
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 400 Stücke:
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2+12.32 EUR
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BD9G201EFJ-LBE2 datasheet?p=BD9G201EFJ-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD9G201EFJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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BD9G201EFJ-LBE2 datasheet?p=BD9G201EFJ-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD9G201EFJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 500kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: Yes
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 2031 Stücke:
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5+4.52 EUR
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25+3.07 EUR
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250+2.59 EUR
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SCS230KE2HRC11 datasheet?p=SCS230KE2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230KE2HRC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 352 Stücke:
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SCS240KE2HRC11 datasheet?p=SCS240KE2HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS240KE2HRC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 161 Stücke:
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UMZ16NFHT106 datasheet?p=UMZ16NFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ16NFHT106
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 16.18V UMD3
Operating Temperature: 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 16.18 V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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2SCR542F3TR datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR542F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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3000+0.51 EUR
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2SA2071P5T100Q 2sa2071p5.pdf
2SA2071P5T100Q
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SCR341QTR datasheet?p=2SCR341Q&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR341QTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 400V 0.1A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TSMT6 (SC-95)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SAR502U3T106 datasheet?p=2SAR502U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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3000+0.13 EUR
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2SCR542F3TR datasheet?p=2SCR542F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR542F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
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11+2.07 EUR
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100+0.84 EUR
500+0.65 EUR
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2SA2071P5T100Q 2sa2071p5.pdf
2SA2071P5T100Q
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
auf Bestellung 2021 Stücke:
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12+1.82 EUR
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2SCR341QTR datasheet?p=2SCR341Q&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR341QTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 400V 0.1A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TSMT6 (SC-95)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 450 Stücke:
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13+1.74 EUR
20+1.08 EUR
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2SAR502U3T106 datasheet?p=2SAR502U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 7919 Stücke:
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35+0.61 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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KX127-1068 KX127-1068-Specifications-Rev-2.0.pdf
KX127-1068
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Supplier Device Package: 12-LGA (2x2)
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Acceleration Range: ±2g, 4g, 8g
Axis: X, Y, Z
Type: Digital
Mounting Type: Surface Mount
Output Type: I2C, SPI
Package / Case: 12-VFLGA
Features: Selectable Scale
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KX127-1068 KX127-1068-Specifications-Rev-2.0.pdf
KX127-1068
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Sensitivity (LSB/g): 16384 (±2g) ~ 4096 (±8g)
Supplier Device Package: 12-LGA (2x2)
Bandwidth: 3.5kHz (X,Y), 1.8kHz (Z)
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Acceleration Range: ±2g, 4g, 8g
Axis: X, Y, Z
Type: Digital
Mounting Type: Surface Mount
Output Type: I2C, SPI
Package / Case: 12-VFLGA
Features: Selectable Scale
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BA12003DF-ZE2 ba1200xdf-z-e.pdf
BA12003DF-ZE2
Hersteller: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Produkt ist nicht verfügbar
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BA3121F-BZE2
BA3121F-BZE2
Hersteller: Rohm Semiconductor
Description: IC AMP CLASS AB STEREO 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 4V ~ 18V
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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BR25G320FJ-E2
BR25G320FJ-E2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU4052BCF-BZE2
BU4052BCF-BZE2
Hersteller: Rohm Semiconductor
Description: IC MUX CMOS HV SOP16
Produkt ist nicht verfügbar
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BU4066BCF-BZE2
Hersteller: Rohm Semiconductor
Description: IC SWITCH SPST-NOX4 280OHM 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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BU4094BCF-BZE2
BU4094BCF-BZE2
Hersteller: Rohm Semiconductor
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 16V
Supplier Device Package: 16-SOP
Part Status: Active
Number of Bits per Element: 8
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LM339F-E2 datasheet?p=LM339F&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LM339F-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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2500+0.79 EUR
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BA12004DF-ZE2 ba1200xdf-z-e.pdf
BA12004DF-ZE2
Hersteller: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Produkt ist nicht verfügbar
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BA4560N-BZ
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SIP
Current - Supply: 4mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-SIP
Packaging: Tube
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 8 V
Current - Output / Channel: 25 mA
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 8-SIP
Voltage - Input Offset: 500 µV
Current - Input Bias: 50 nA
Gain Bandwidth Product: 10 MHz
Slew Rate: 4V/µs
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BSS4130T116 BSS4130.pdf
BSS4130T116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BSS63T116 DS_846_BSS63.pdf
BSS63T116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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BSS64T116 DS_846_BSS64.pdf
BSS64T116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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US6X8TR datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6X8TR
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
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3000+0.42 EUR
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UML23NTR eml22-uml23n
UML23NTR
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
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Mindestbestellmenge: 3000 Stücke
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VT6T12T2R vt6t12.pdf
VT6T12T2R
Hersteller: Rohm Semiconductor
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
Produkt ist nicht verfügbar
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BSS63T116 DS_846_BSS63.pdf
BSS63T116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 350 mW
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US6X8TR datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6X8TR
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
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19+1.11 EUR
23+0.95 EUR
100+0.65 EUR
500+0.55 EUR
1000+0.46 EUR
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UML23NTR eml22-uml23n
UML23NTR
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
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VT6T12T2R vt6t12.pdf
VT6T12T2R
Hersteller: Rohm Semiconductor
Description: TRANS GP BJT PNP 50V 0.1A 6-PIN
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27+0.8 EUR
33+0.65 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.25 EUR
2000+0.23 EUR
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UML23NTR eml22-uml23n
UML23NTR
Hersteller: Rohm Semiconductor
Description: NPN GENERAL PURPOSE AMPLIFICATIO
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BD41000AFJ-CE2 datasheet?p=BD41000AFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD41000AFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC TRANSCEIVER 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOP-J
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SCT2080KEHRC11 datasheet?p=SCT2080KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT2080KEHRC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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SCT3017ALHRC11 datasheet?p=SCT3017ALHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3017ALHRC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Power Dissipation (Max): 427W
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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