Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97296) > Seite 831 nach 1622
Foto | Bezeichnung | Hersteller | Beschreibung |
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RFN6BM2DFHTL | Rohm Semiconductor | Description: SUPER FAST RECOVERY DIODE (AEC-Q |
auf Bestellung 362 Stücke: Lieferzeit 21-28 Tag (e) |
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RB095BM-60FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4052 Stücke: Lieferzeit 21-28 Tag (e) |
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RF505BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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BD80C0AFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 8V 1A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 8V Grade: Automotive PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Qualification: AEC-Q100 |
auf Bestellung 1730 Stücke: Lieferzeit 21-28 Tag (e) |
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DAN222WMFHTL | Rohm Semiconductor | Description: SWITCHING DIODES (CORRESPONDS TO |
Produkt ist nicht verfügbar |
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BR24A01AF-WME2 | Rohm Semiconductor | Description: EEPROM SERIAL-I2C 1K-BIT 128 X 8 |
auf Bestellung 1170 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A02F-WME2 | Rohm Semiconductor | Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8 |
auf Bestellung 2330 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A04F-WME2 | Rohm Semiconductor | Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8 |
auf Bestellung 2395 Stücke: Lieferzeit 21-28 Tag (e) |
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DAP222WMFHTL | Rohm Semiconductor | Description: SWITCHING DIODES (CORRESPONDS TO |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DAN222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VMD3 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6985 Stücke: Lieferzeit 21-28 Tag (e) |
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RSL020P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10517 Stücke: Lieferzeit 21-28 Tag (e) |
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DAP222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VMD3 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3865 Stücke: Lieferzeit 21-28 Tag (e) |
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RFN10BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 10A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2368 Stücke: Lieferzeit 21-28 Tag (e) |
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RFN10NS6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 10A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 169pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 865 Stücke: Lieferzeit 21-28 Tag (e) |
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RHU003N03FRAT106 | Rohm Semiconductor | Description: MOSFET N-CH 30V 300MA UMT3 |
Produkt ist nicht verfügbar |
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SP8M24FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SP8M4FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+PCH MOSFET (CORRESP |
Produkt ist nicht verfügbar |
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SP8M5FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+PCH MOSFET |
auf Bestellung 1465 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8M6FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RB095BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11.4 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 331 Stücke: Lieferzeit 21-28 Tag (e) |
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RJ1U330AAFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
auf Bestellung 244 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K32FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SP8K33FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K52FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2460 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8M21FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+PCH MOSFET (CORRESP |
Produkt ist nicht verfügbar |
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RJK005N03FRAT146 | Rohm Semiconductor | Description: 2.5V DRIVE NCH MOSFET (AEC-Q101 |
auf Bestellung 3878 Stücke: Lieferzeit 21-28 Tag (e) |
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RSS070P05FRATB | Rohm Semiconductor | Description: MOSFET P-CH 45V 7A 8SOP |
auf Bestellung 1820 Stücke: Lieferzeit 21-28 Tag (e) |
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RSS100N03FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2410 Stücke: Lieferzeit 21-28 Tag (e) |
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BD90C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 9V 1A TO252-5 Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Min/Fixed): 9V Control Features: Enable Part Status: Active PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A01AFJ-WME2 | Rohm Semiconductor | Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |
auf Bestellung 2293 Stücke: Lieferzeit 21-28 Tag (e) |
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BR25H640F-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 957 Stücke: Lieferzeit 21-28 Tag (e) |
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DAN217UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3F Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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RB085BM-90FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.4 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
auf Bestellung 2388 Stücke: Lieferzeit 21-28 Tag (e) |
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RB168VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 1A TUMD2M Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.8 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 25700 Stücke: Lieferzeit 21-28 Tag (e) |
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RB218NS150FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 150V 20A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14.8 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 150 V |
auf Bestellung 11744 Stücke: Lieferzeit 21-28 Tag (e) |
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RR601BM4SFHTL | Rohm Semiconductor | Description: RECTIFYING DIODE (AEC-Q101 QUALI |
auf Bestellung 1229 Stücke: Lieferzeit 21-28 Tag (e) |
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RUC002N05HZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1154 Stücke: Lieferzeit 21-28 Tag (e) |
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RUF025N02FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6230 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K22FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
auf Bestellung 2442 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K24FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
auf Bestellung 2349 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K31FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DAN202UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3F Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1235 Stücke: Lieferzeit 21-28 Tag (e) |
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RF2001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 114 Stücke: Lieferzeit 21-28 Tag (e) |
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RB050LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTM Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26.35 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 15985 Stücke: Lieferzeit 21-28 Tag (e) |
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RB085BM-40FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.3 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 6389 Stücke: Lieferzeit 21-28 Tag (e) |
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RB160VYM-60FHTR | Rohm Semiconductor | Description: SCHOTTKY BARRIER DIODE (AEC-Q101 |
Produkt ist nicht verfügbar |
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RBQ20BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2272 Stücke: Lieferzeit 21-28 Tag (e) |
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RBQ30NS45AFHTL | Rohm Semiconductor | Description: DIODE ARRAY SCHOTT 45V 30A LPDS |
auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) |
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RF501BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4666 Stücke: Lieferzeit 21-28 Tag (e) |
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RK7002BMHZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 34407 Stücke: Lieferzeit 21-28 Tag (e) |
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RRL025P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8M51FRATB | Rohm Semiconductor | Description: 4V DRIVE NCH+PCH MOSFET |
Produkt ist nicht verfügbar |
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UM6K31NFHATCN | Rohm Semiconductor |
Description: 2.5V DRIVE NCH+NCH MOSFET Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT6 Part Status: Active |
Produkt ist nicht verfügbar |
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RB238NS100FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 40A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24.7 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RBQ30NS65AFHTL | Rohm Semiconductor | Description: DIODE ARRAY SCHOTT 65V 30A LPDS |
auf Bestellung 39 Stücke: Lieferzeit 21-28 Tag (e) |
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BD83733HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7 Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1875 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A02FJ-WME2 | Rohm Semiconductor | Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8 |
auf Bestellung 2485 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A08F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 945 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A16F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 652 Stücke: Lieferzeit 21-28 Tag (e) |
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BR24A32F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4919 Stücke: Lieferzeit 21-28 Tag (e) |
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RFN6BM2DFHTL |
Hersteller: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE (AEC-Q
Description: SUPER FAST RECOVERY DIODE (AEC-Q
auf Bestellung 362 Stücke:
Lieferzeit 21-28 Tag (e)RB095BM-60FHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4052 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.26 EUR |
15+ | 1.85 EUR |
100+ | 1.44 EUR |
500+ | 1.22 EUR |
1000+ | 0.99 EUR |
RF505BM6SFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.74 EUR |
10+ | 3.35 EUR |
BD80C0AFP-CE2 |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 8V
Grade: Automotive
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 8V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 8V
Grade: Automotive
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Qualification: AEC-Q100
auf Bestellung 1730 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.3 EUR |
10+ | 2.96 EUR |
25+ | 2.81 EUR |
100+ | 2.31 EUR |
250+ | 2.16 EUR |
500+ | 1.91 EUR |
1000+ | 1.51 EUR |
DAN222WMFHTL |
Hersteller: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
Produkt ist nicht verfügbar
BR24A01AF-WME2 |
Hersteller: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 1K-BIT 128 X 8
Description: EEPROM SERIAL-I2C 1K-BIT 128 X 8
auf Bestellung 1170 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.26 EUR |
25+ | 1.17 EUR |
100+ | 1.04 EUR |
250+ | 1.02 EUR |
500+ | 1.01 EUR |
1000+ | 0.98 EUR |
BR24A02F-WME2 |
Hersteller: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8
Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8
auf Bestellung 2330 Stücke:
Lieferzeit 21-28 Tag (e)BR24A04F-WME2 |
Hersteller: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
auf Bestellung 2395 Stücke:
Lieferzeit 21-28 Tag (e)DAP222WMFHTL |
Hersteller: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)DAN222MFHT2L |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6985 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
43+ | 0.61 EUR |
100+ | 0.3 EUR |
500+ | 0.25 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
RSL020P03FRATR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10517 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
22+ | 1.19 EUR |
100+ | 0.82 EUR |
500+ | 0.69 EUR |
1000+ | 0.58 EUR |
DAP222MFHT2L |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3865 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.75 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
2000+ | 0.19 EUR |
RFN10BM6SFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2368 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.43 EUR |
10+ | 2.8 EUR |
100+ | 2.18 EUR |
500+ | 1.85 EUR |
1000+ | 1.5 EUR |
RFN10NS6SFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.61 EUR |
10+ | 2.95 EUR |
100+ | 2.3 EUR |
500+ | 1.95 EUR |
RHU003N03FRAT106 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Description: MOSFET N-CH 30V 300MA UMT3
Produkt ist nicht verfügbar
SP8M24FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SP8M4FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Produkt ist nicht verfügbar
SP8M5FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET
Description: 4V DRIVE NCH+PCH MOSFET
auf Bestellung 1465 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 5.17 EUR |
10+ | 4.64 EUR |
100+ | 3.73 EUR |
500+ | 3.06 EUR |
1000+ | 2.54 EUR |
SP8M6FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RB095BM-40FHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 331 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.26 EUR |
14+ | 1.95 EUR |
100+ | 1.35 EUR |
RJ1U330AAFRGTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 244 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.66 EUR |
10+ | 9.58 EUR |
100+ | 7.85 EUR |
SP8K32FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SP8K33FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.65 EUR |
SP8K52FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2460 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.44 EUR |
14+ | 2 EUR |
100+ | 1.55 EUR |
500+ | 1.32 EUR |
1000+ | 1.07 EUR |
SP8M21FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Produkt ist nicht verfügbar
RJK005N03FRAT146 |
Hersteller: Rohm Semiconductor
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
auf Bestellung 3878 Stücke:
Lieferzeit 21-28 Tag (e)RSS070P05FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
auf Bestellung 1820 Stücke:
Lieferzeit 21-28 Tag (e)RSS100N03FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2410 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.16 EUR |
15+ | 1.77 EUR |
100+ | 1.38 EUR |
500+ | 1.17 EUR |
1000+ | 0.95 EUR |
BD90C0AWFP-CE2 |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Active
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 9V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Active
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.9 EUR |
10+ | 3.47 EUR |
BR24A01AFJ-WME2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
auf Bestellung 2293 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.46 EUR |
25+ | 1.36 EUR |
50+ | 1.35 EUR |
100+ | 1.2 EUR |
250+ | 1.18 EUR |
500+ | 1.16 EUR |
1000+ | 1.13 EUR |
BR25H640F-2ACE2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 957 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.61 EUR |
10+ | 3.28 EUR |
25+ | 3.19 EUR |
50+ | 3.17 EUR |
100+ | 2.83 EUR |
500+ | 2.78 EUR |
DAN217UMFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)RB085BM-90FHTL |
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
auf Bestellung 2388 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.16 EUR |
10+ | 3.72 EUR |
100+ | 2.9 EUR |
500+ | 2.4 EUR |
1000+ | 1.89 EUR |
RB168VYM150FHTR |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25700 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
23+ | 1.13 EUR |
100+ | 0.79 EUR |
500+ | 0.61 EUR |
1000+ | 0.5 EUR |
RB218NS150FHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 150V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14.8 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Description: DIODE ARR SCHOTT 150V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14.8 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
auf Bestellung 11744 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.67 EUR |
10+ | 3.06 EUR |
100+ | 2.43 EUR |
500+ | 2.06 EUR |
RR601BM4SFHTL |
Hersteller: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
auf Bestellung 1229 Stücke:
Lieferzeit 21-28 Tag (e)RUC002N05HZGT116 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1154 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.57 EUR |
67+ | 0.39 EUR |
136+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
RUF025N02FRATL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6230 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
32+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.44 EUR |
1000+ | 0.36 EUR |
SP8K22FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
auf Bestellung 2442 Stücke:
Lieferzeit 21-28 Tag (e)SP8K24FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
auf Bestellung 2349 Stücke:
Lieferzeit 21-28 Tag (e)SP8K31FRATB |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DAN202UMFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1235 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.68 EUR |
58+ | 0.46 EUR |
118+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
RF2001NS2DFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 114 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.95 EUR |
10+ | 4.94 EUR |
100+ | 3.93 EUR |
RB050LAM-60TFTR |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26.35 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26.35 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15985 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.48 EUR |
21+ | 1.28 EUR |
100+ | 0.89 EUR |
500+ | 0.74 EUR |
1000+ | 0.63 EUR |
RB085BM-40FHTL |
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 6389 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.28 EUR |
10+ | 2.67 EUR |
100+ | 2.08 EUR |
500+ | 1.76 EUR |
1000+ | 1.44 EUR |
RB160VYM-60FHTR |
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Produkt ist nicht verfügbar
RBQ20BM45AFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2272 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.94 EUR |
11+ | 2.41 EUR |
100+ | 1.88 EUR |
500+ | 1.59 EUR |
1000+ | 1.29 EUR |
RBQ30NS45AFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.19 EUR |
RF501BM2SFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4666 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.78 EUR |
12+ | 2.29 EUR |
100+ | 1.78 EUR |
500+ | 1.51 EUR |
1000+ | 1.23 EUR |
RK7002BMHZGT116 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34407 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
70+ | 0.37 EUR |
144+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
RRL025P03FRATR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.27 EUR |
24+ | 1.09 EUR |
SP8M51FRATB |
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET
Description: 4V DRIVE NCH+PCH MOSFET
Produkt ist nicht verfügbar
UM6K31NFHATCN |
Hersteller: Rohm Semiconductor
Description: 2.5V DRIVE NCH+NCH MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Description: 2.5V DRIVE NCH+NCH MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Produkt ist nicht verfügbar
RB238NS100FHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24.7 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24.7 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RBQ30NS65AFHTL |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.72 EUR |
10+ | 3.33 EUR |
BD83733HFP-MTR |
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1875 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.07 EUR |
10+ | 6.36 EUR |
25+ | 6.01 EUR |
100+ | 5.21 EUR |
250+ | 4.94 EUR |
500+ | 4.44 EUR |
1000+ | 3.74 EUR |
BR24A02FJ-WME2 |
Hersteller: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8
Description: EEPROM SERIAL-I2C 2K-BIT 256 X 8
auf Bestellung 2485 Stücke:
Lieferzeit 21-28 Tag (e)BR24A08F-WME2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 945 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.08 EUR |
14+ | 1.89 EUR |
25+ | 1.87 EUR |
50+ | 1.85 EUR |
100+ | 1.66 EUR |
250+ | 1.64 EUR |
500+ | 1.62 EUR |
BR24A16F-WME2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 652 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.81 EUR |
11+ | 2.56 EUR |
25+ | 2.49 EUR |
50+ | 2.48 EUR |
100+ | 2.21 EUR |
500+ | 2.17 EUR |
BR24A32F-WME2 |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4919 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.55 EUR |
10+ | 4.17 EUR |
25+ | 4.05 EUR |
50+ | 4.03 EUR |
100+ | 3.61 EUR |
250+ | 3.6 EUR |
500+ | 3.54 EUR |
1000+ | 3.39 EUR |