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BD733L2FP3-EVK-301 BD733L2FP3-EVK-301 Rohm Semiconductor bd7xxl2efj-c-e.pdf Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Contents: Board(s)
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RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
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RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
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SH8KA4TB SH8KA4TB Rohm Semiconductor SOP8_TB_taping.pdf Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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SH8KA2GZETB SH8KA2GZETB Rohm Semiconductor Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
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SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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SH8KA4TB1 SH8KA4TB1 Rohm Semiconductor datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DTB143EKFRAT146 DTB143EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTB143EKFRAT146 DTB143EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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KX128-1091 Rohm Semiconductor Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
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BCX17HZGT116 BCX17HZGT116 Rohm Semiconductor datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BCX17HZGT116 BCX17HZGT116 Rohm Semiconductor datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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DTC123EEBTL DTC123EEBTL Rohm Semiconductor datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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DTC123EEBTL DTC123EEBTL Rohm Semiconductor datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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FDZT40RB5.1 FDZT40RB5.1 Rohm Semiconductor FDZ5.1.pdf Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Produkt ist nicht verfügbar
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FDZT40RB5.1 FDZT40RB5.1 Rohm Semiconductor FDZ5.1.pdf Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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FDZT40RB7.5 FDZT40RB7.5 Rohm Semiconductor FDZ7.5.pdf Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
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FDZT40RB6.2 FDZT40RB6.2 Rohm Semiconductor FDZ6.2.pdf Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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FDZT40RB6.2 FDZT40RB6.2 Rohm Semiconductor FDZ6.2.pdf Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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FDZT40RB5.6 FDZT40RB5.6 Rohm Semiconductor FDZ5.6.pdf Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
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ESR18EZPJ104 ESR18EZPJ104 Rohm Semiconductor esr-e.pdf Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
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RRU1LAM4STFTR RRU1LAM4STFTR Rohm Semiconductor datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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RRU1LAM4STFTR RRU1LAM4STFTR Rohm Semiconductor datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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RCX220N25 RCX220N25 Rohm Semiconductor datasheet?p=RCX220N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 22A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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IMZ4T108 IMZ4T108 Rohm Semiconductor datasheet?p=IMZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
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IMZ4T108 IMZ4T108 Rohm Semiconductor datasheet?p=IMZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
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BD9P233MUF-CE2 BD9P233MUF-CE2 Rohm Semiconductor datasheet?p=BD9P233MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
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BD9P233MUF-CE2 BD9P233MUF-CE2 Rohm Semiconductor datasheet?p=BD9P233MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
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RSR025P03HZGTL RSR025P03HZGTL Rohm Semiconductor rsr025p03hzgtl-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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RSR025P03HZGTL RSR025P03HZGTL Rohm Semiconductor rsr025p03hzgtl-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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RS3E095BNGZETB RS3E095BNGZETB Rohm Semiconductor rs3e095bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
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RS3E095BNGZETB RS3E095BNGZETB Rohm Semiconductor rs3e095bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
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RB851YXNT2R Rohm Semiconductor Description: DIODE SCHOTTKY EMD4 SMD
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RB851Y7HMT2R Rohm Semiconductor Description: DIODE SCHOTTKY EMD4 SMD
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RB851YGT2R Rohm Semiconductor Description: DIODE SCHOTTKY EMD4 SMD
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RB851YGT2RB Rohm Semiconductor Description: DIODE SCHOTTKY EMD4 SMD
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BR25L160F-WE2 BR25L160F-WE2 Rohm Semiconductor BR25Lxxx-W%20Series.pdf Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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BR25L160F-WE2 BR25L160F-WE2 Rohm Semiconductor BR25Lxxx-W%20Series.pdf Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BD9328EFJ_EVK BD9328EFJ_EVK Rohm Semiconductor BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf Description: EVAL BOARD FOR BD9328
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.2V ~ 18V
Current - Output: 2A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9328
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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RB168MM100TFTR RB168MM100TFTR Rohm Semiconductor datasheet?p=RB168MM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.21 EUR
6000+0.2 EUR
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BD733L2FP3-EVK-301 bd7xxl2efj-c-e.pdf
BD733L2FP3-EVK-301
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Contents: Board(s)
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RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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4+4.7 EUR
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500+2.63 EUR
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RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
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RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
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SH8KA4TB SOP8_TB_taping.pdf
SH8KA4TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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14+1.27 EUR
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 1886 Stücke:
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11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
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SH8KA2GZETB
SH8KA2GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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8+2.31 EUR
10+1.88 EUR
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2800 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
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SH8KA4TB1 datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8KA4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Produkt ist nicht verfügbar
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2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 889 Stücke:
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Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
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BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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2500+1.09 EUR
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BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5855 Stücke:
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Anzahl Preis
8+2.2 EUR
11+1.61 EUR
25+1.46 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.13 EUR
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BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.059 EUR
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BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4298 Stücke:
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Anzahl Preis
59+0.3 EUR
91+0.19 EUR
128+0.14 EUR
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VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000
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KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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23+0.77 EUR
30+0.6 EUR
100+0.36 EUR
500+0.33 EUR
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DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.089 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000
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DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 6355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.27 EUR
107+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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DTB143EKFRAT146
DTB143EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTB143EKFRAT146
DTB143EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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KX128-1091
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
Produkt ist nicht verfügbar
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BCX17HZGT116 datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BCX17HZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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BCX17HZGT116 datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BCX17HZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3021 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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DTC123EEBTL datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC123EEBTL datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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FDZT40RB5.1 FDZ5.1.pdf
FDZT40RB5.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Produkt ist nicht verfügbar
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FDZT40RB5.1 FDZ5.1.pdf
FDZT40RB5.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
Mindestbestellmenge: 33
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FDZT40RB7.5 FDZ7.5.pdf
FDZT40RB7.5
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Produkt ist nicht verfügbar
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FDZT40RB6.2 FDZ6.2.pdf
FDZT40RB6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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FDZT40RB6.2 FDZ6.2.pdf
FDZT40RB6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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FDZT40RB5.6 FDZ5.6.pdf
FDZT40RB5.6
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
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ESR18EZPJ104 esr-e.pdf
ESR18EZPJ104
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
auf Bestellung 5119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
120+0.15 EUR
180+0.098 EUR
209+0.084 EUR
500+0.062 EUR
1000+0.056 EUR
Mindestbestellmenge: 59
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RRU1LAM4STFTR datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRU1LAM4STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
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RRU1LAM4STFTR datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRU1LAM4STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
23+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
Mindestbestellmenge: 19
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RCX220N25 datasheet?p=RCX220N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX220N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 22A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.92 EUR
500+1.97 EUR
Mindestbestellmenge: 5
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IMZ4T108 datasheet?p=IMZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMZ4T108
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
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IMZ4T108 datasheet?p=IMZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMZ4T108
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
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BD9P233MUF-CE2 datasheet?p=BD9P233MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P233MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
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BD9P233MUF-CE2 datasheet?p=BD9P233MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9P233MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.42 EUR
10+6.88 EUR
25+5.95 EUR
100+4.91 EUR
250+4.39 EUR
500+4.08 EUR
1000+4.03 EUR
Mindestbestellmenge: 2
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RSR025P03HZGTL rsr025p03hzgtl-e.pdf
RSR025P03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.3 EUR
Mindestbestellmenge: 3000
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RSR025P03HZGTL rsr025p03hzgtl-e.pdf
RSR025P03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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RS3E095BNGZETB rs3e095bngzetb-e.pdf
RS3E095BNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Produkt ist nicht verfügbar
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RS3E095BNGZETB rs3e095bngzetb-e.pdf
RS3E095BNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
auf Bestellung 4090 Stücke:
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RB851YXNT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Produkt ist nicht verfügbar
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RB851Y7HMT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Produkt ist nicht verfügbar
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RB851YGT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Produkt ist nicht verfügbar
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RB851YGT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Produkt ist nicht verfügbar
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BR25L160F-WE2 BR25Lxxx-W%20Series.pdf
BR25L160F-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR25L160F-WE2 BR25Lxxx-W%20Series.pdf
BR25L160F-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BD9328EFJ_EVK BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf
BD9328EFJ_EVK
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD9328
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.2V ~ 18V
Current - Output: 2A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9328
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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RB168MM100TFTR datasheet?p=RB168MM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM100TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000
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