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BV1LA025EFJ-CE2 BV1LA025EFJ-CE2 Rohm Semiconductor bv1la025efj-c-e.pdf Description: AUTOMOTIVE IPD 1CH LOW SIDE SWIT
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100+2.32 EUR
250+2.18 EUR
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BD80C0AFPS-LBE2 BD80C0AFPS-LBE2 Rohm Semiconductor bdx0c0afps-lb-e.pdf Description: IC REG LINEAR 8V 1A TO52S-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-52S-3
Voltage - Output (Min/Fixed): 8V
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1 mA
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BD80C0AFPS-LBE2 BD80C0AFPS-LBE2 Rohm Semiconductor bdx0c0afps-lb-e.pdf Description: IC REG LINEAR 8V 1A TO52S-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-52S-3
Voltage - Output (Min/Fixed): 8V
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1 mA
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500+1.8 EUR
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BD80GA3MEFJ-ME2 BD80GA3MEFJ-ME2 Rohm Semiconductor datasheet?p=BD80GA3MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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BD80GA3MEFJ-ME2 BD80GA3MEFJ-ME2 Rohm Semiconductor datasheet?p=BD80GA3MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 8V 300MA 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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HP8M51TB1 HP8M51TB1 Rohm Semiconductor datasheet?p=HP8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8M51TB1 HP8M51TB1 Rohm Semiconductor datasheet?p=HP8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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SDR03EZPF3R30 SDR03EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPF3R30 SDR03EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPJ470 SDR03EZPJ470 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPJ470 SDR03EZPJ470 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4641 SDR03EZPD4641 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4641 SDR03EZPD4641 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD5110 SDR03EZPD5110 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 511 Ohms
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SDR03EZPD5110 SDR03EZPD5110 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 511 Ohms
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SDR10EZPF1200 SDR10EZPF1200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
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SDR10EZPF1200 SDR10EZPF1200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
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SDR03EZPF1200 SDR03EZPF1200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPF1200 SDR03EZPF1200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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1000+0.037 EUR
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UFZVTE-175.6B UFZVTE-175.6B Rohm Semiconductor ufzvte-175.6b-e.pdf Description: 500MW 5.6V, SOD-323FL, SMALL AND
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2SB1412TLQ 2SB1412TLQ Rohm Semiconductor 2SB1386%2C1412%2C1326.pdf Description: TRANS PNP 20V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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SFR18EZPJ000 SFR18EZPJ000 Rohm Semiconductor datasheet?p=SFR18EZPJ000&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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SFR18EZPJ000 SFR18EZPJ000 Rohm Semiconductor datasheet?p=SFR18EZPJ000&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
auf Bestellung 4932 Stücke:
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59+0.3 EUR
118+0.15 EUR
176+0.1 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
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BR25H128FJ-5ACE2 BR25H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BR25H128FJ-5ACE2 BR25H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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BR25H128F-2LBH2 BR25H128F-2LBH2 Rohm Semiconductor datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BR25H128F-2LBH2 BR25H128F-2LBH2 Rohm Semiconductor datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 242 Stücke:
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10+3.23 EUR
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50+3.07 EUR
100+3 EUR
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BR24H128F-5ACE2 BR24H128F-5ACE2 Rohm Semiconductor br24h256xxx-5ac-e.pdf Description: 125 OPERATION IC BUS EEPROM FOR
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BR24H128FJ-5ACE2 BR24H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FJ-5ACE2 BR24H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 8700 Stücke:
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17+1.09 EUR
18+0.99 EUR
25+0.97 EUR
100+0.87 EUR
250+0.86 EUR
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BR24H128FVM-5ACTR BR24H128FVM-5ACTR Rohm Semiconductor datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FVM-5ACTR BR24H128FVM-5ACTR Rohm Semiconductor datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA044TMT2L DTA044TMT2L Rohm Semiconductor dta044tebtl-e.pdf Description: TRANS PREBIAS PNP 50V VMT3
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DTA044TEBTL DTA044TEBTL Rohm Semiconductor datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2042 Stücke:
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1900 Stücke:
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 788 Stücke:
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SP8M24HZGTB SP8M24HZGTB Rohm Semiconductor datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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RR274EA-400FHTR RR274EA-400FHTR Rohm Semiconductor datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SCS230AE2GC11 SCS230AE2GC11 Rohm Semiconductor datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
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SCS220AGC17 SCS220AGC17 Rohm Semiconductor datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 690 Stücke:
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SCS212AGC17 SCS212AGC17 Rohm Semiconductor datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
auf Bestellung 955 Stücke:
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SCS220KGC17 SCS220KGC17 Rohm Semiconductor datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 991 Stücke:
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BV1LA025EFJ-CE2 bv1la025efj-c-e.pdf
BV1LA025EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE IPD 1CH LOW SIDE SWIT
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6+3.22 EUR
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BD80C0AFPS-LBE2 bdx0c0afps-lb-e.pdf
BD80C0AFPS-LBE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO52S-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-52S-3
Voltage - Output (Min/Fixed): 8V
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1 mA
Produkt ist nicht verfügbar
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BD80C0AFPS-LBE2 bdx0c0afps-lb-e.pdf
BD80C0AFPS-LBE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO52S-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-52S-3
Voltage - Output (Min/Fixed): 8V
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 1 mA
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6+3.29 EUR
10+2.43 EUR
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BD80GA3MEFJ-ME2 datasheet?p=BD80GA3MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD80GA3MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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2500+0.92 EUR
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BD80GA3MEFJ-ME2 datasheet?p=BD80GA3MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD80GA3MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 8V 300MA 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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9+2.16 EUR
10+1.94 EUR
25+1.84 EUR
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HP8M51TB1 datasheet?p=HP8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8M51TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
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HP8M51TB1 datasheet?p=HP8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8M51TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 667 Stücke:
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4+4.68 EUR
10+3.21 EUR
100+2.22 EUR
500+1.8 EUR
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SDR03EZPF3R30 sdr-e.pdf
SDR03EZPF3R30
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.035 EUR
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SDR03EZPF3R30 sdr-e.pdf
SDR03EZPF3R30
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 7500 Stücke:
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Anzahl Preis
56+0.32 EUR
69+0.26 EUR
176+0.1 EUR
1000+0.042 EUR
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SDR03EZPJ470 sdr-e.pdf
SDR03EZPJ470
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.021 EUR
10000+0.019 EUR
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SDR03EZPJ470 sdr-e.pdf
SDR03EZPJ470
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
112+0.16 EUR
289+0.061 EUR
1000+0.027 EUR
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SDR03EZPD4641 sdr-e.pdf
SDR03EZPD4641
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.046 EUR
10000+0.043 EUR
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SDR03EZPD4641 sdr-e.pdf
SDR03EZPD4641
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
53+0.34 EUR
135+0.13 EUR
1000+0.055 EUR
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SDR03EZPD5110 sdr-e.pdf
SDR03EZPD5110
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 511 Ohms
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5000+0.048 EUR
10000+0.045 EUR
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SDR03EZPD5110 sdr-e.pdf
SDR03EZPD5110
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 511 Ohms
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Anzahl Preis
44+0.4 EUR
50+0.35 EUR
128+0.14 EUR
1000+0.058 EUR
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SDR10EZPF1200 sdr-e.pdf
SDR10EZPF1200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
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5000+0.059 EUR
10000+0.055 EUR
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SDR10EZPF1200 sdr-e.pdf
SDR10EZPF1200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 14990 Stücke:
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Anzahl Preis
35+0.51 EUR
41+0.43 EUR
105+0.17 EUR
1000+0.071 EUR
2500+0.065 EUR
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SDR03EZPF1200 sdr-e.pdf
SDR03EZPF1200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.031 EUR
10000+0.028 EUR
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SDR03EZPF1200 sdr-e.pdf
SDR03EZPF1200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
79+0.22 EUR
202+0.087 EUR
1000+0.037 EUR
2500+0.034 EUR
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UFZVTE-175.6B ufzvte-175.6b-e.pdf
UFZVTE-175.6B
Hersteller: Rohm Semiconductor
Description: 500MW 5.6V, SOD-323FL, SMALL AND
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.14 EUR
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2SB1412TLQ 2SB1386%2C1412%2C1326.pdf
2SB1412TLQ
Hersteller: Rohm Semiconductor
Description: TRANS PNP 20V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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SFR18EZPJ000 datasheet?p=SFR18EZPJ000&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SFR18EZPJ000
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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SFR18EZPJ000 datasheet?p=SFR18EZPJ000&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SFR18EZPJ000
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
auf Bestellung 4932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
118+0.15 EUR
176+0.1 EUR
206+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
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BR25H128FJ-5ACE2 datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BR25H128FJ-5ACE2 datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2561 Stücke:
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Anzahl Preis
10+1.78 EUR
25+1.73 EUR
100+1.54 EUR
500+1.51 EUR
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BR25H128F-2LBH2 datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128F-2LBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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BR25H128F-2LBH2 datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128F-2LBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 242 Stücke:
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Anzahl Preis
6+3.45 EUR
10+3.23 EUR
25+3.14 EUR
50+3.07 EUR
100+3 EUR
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BR24H128F-5ACE2 br24h256xxx-5ac-e.pdf
BR24H128F-5ACE2
Hersteller: Rohm Semiconductor
Description: 125 OPERATION IC BUS EEPROM FOR
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BR24H128FJ-5ACE2 datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2500+0.86 EUR
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BR24H128FJ-5ACE2 datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 8700 Stücke:
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Anzahl Preis
17+1.09 EUR
18+0.99 EUR
25+0.97 EUR
100+0.87 EUR
250+0.86 EUR
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BR24H128FVM-5ACTR datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FVM-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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Anzahl Preis
3000+1.12 EUR
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BR24H128FVM-5ACTR datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FVM-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6117 Stücke:
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Anzahl Preis
12+1.58 EUR
13+1.44 EUR
25+1.43 EUR
50+1.42 EUR
100+1.27 EUR
250+1.26 EUR
500+1.24 EUR
1000+1.19 EUR
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2500+2.93 EUR
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2500+1.84 EUR
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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3000+0.08 EUR
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
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Anzahl Preis
46+0.39 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
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DTA044TMT2L dta044tebtl-e.pdf
DTA044TMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V VMT3
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DTA044TEBTL datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA044TEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
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3000+0.052 EUR
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2042 Stücke:
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Anzahl Preis
59+0.3 EUR
95+0.19 EUR
152+0.12 EUR
500+0.085 EUR
1000+0.074 EUR
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Produkt ist nicht verfügbar
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
auf Bestellung 2495 Stücke:
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Anzahl Preis
14+1.32 EUR
19+0.95 EUR
25+0.86 EUR
100+0.75 EUR
250+0.7 EUR
500+0.67 EUR
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
auf Bestellung 7462 Stücke:
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Anzahl Preis
11+1.71 EUR
15+1.19 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.7 EUR
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+3.58 EUR
100+2.5 EUR
500+2.17 EUR
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1897 Stücke:
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Anzahl Preis
5+3.54 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 788 Stücke:
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5+3.61 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
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SP8M24HZGTB datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M24HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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RR274EA-400FHTR datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RR274EA-400FHTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SCS230AE2GC11 datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230AE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
auf Bestellung 316 Stücke:
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1+21.08 EUR
10+14.7 EUR
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SCS220AGC17 datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 690 Stücke:
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2+11.7 EUR
50+6.44 EUR
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SCS212AGC17 datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS212AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
auf Bestellung 955 Stücke:
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2+11.26 EUR
50+6.02 EUR
100+5.51 EUR
500+4.62 EUR
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SCS220KGC17 datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 991 Stücke:
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Anzahl Preis
1+19.64 EUR
10+13.81 EUR
100+12.68 EUR
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