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BR24H128FVM-5ACTR BR24H128FVM-5ACTR Rohm Semiconductor datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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50+1.42 EUR
100+1.27 EUR
250+1.26 EUR
500+1.24 EUR
1000+1.19 EUR
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA044TMT2L DTA044TMT2L Rohm Semiconductor dta044tebtl-e.pdf Description: TRANS PREBIAS PNP 50V VMT3
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DTA044TEBTL DTA044TEBTL Rohm Semiconductor datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M24HZGTB SP8M24HZGTB Rohm Semiconductor datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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RR274EA-400FHTR RR274EA-400FHTR Rohm Semiconductor datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SCS230AE2GC11 SCS230AE2GC11 Rohm Semiconductor datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
auf Bestellung 316 Stücke:
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1+21.08 EUR
10+14.7 EUR
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SCS220AGC17 SCS220AGC17 Rohm Semiconductor datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.7 EUR
50+6.44 EUR
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SCS212AGC17 SCS212AGC17 Rohm Semiconductor datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
auf Bestellung 955 Stücke:
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2+11.26 EUR
50+6.02 EUR
100+5.51 EUR
500+4.62 EUR
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SCS220KGC17 SCS220KGC17 Rohm Semiconductor datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 991 Stücke:
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10+13.81 EUR
100+12.68 EUR
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SCS220KE2GC11 SCS220KE2GC11 Rohm Semiconductor datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 756 Stücke:
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1+26.15 EUR
30+15.72 EUR
120+13.87 EUR
510+13.77 EUR
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SCS230KE2GC11 SCS230KE2GC11 Rohm Semiconductor datasheet?p=SCS230KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SIC 1200V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 344 Stücke:
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10+24.31 EUR
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SCS220AE2GC11 SCS220AE2GC11 Rohm Semiconductor datasheet?p=SCS220AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 650V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 363 Stücke:
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2+17.05 EUR
10+11.74 EUR
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SCS220AEGC11 SCS220AEGC11 Rohm Semiconductor datasheet?p=SCS220AE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 345 Stücke:
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2+16.63 EUR
10+11.43 EUR
Mindestbestellmenge: 2
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SDR03EZPD4223 SDR03EZPD4223 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.044 EUR
10000+0.041 EUR
Mindestbestellmenge: 5000
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SDR03EZPD4223 SDR03EZPD4223 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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Lieferzeit 10-14 Tag (e)
48+0.37 EUR
55+0.32 EUR
141+0.13 EUR
1000+0.053 EUR
2500+0.048 EUR
Mindestbestellmenge: 48
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LTR100LJZPFSR062 LTR100LJZPFSR062 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR062 LTR100LJZPFSR062 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
auf Bestellung 3785 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR039 LTR100LJZPFSR039 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR039 LTR100LJZPFSR039 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
auf Bestellung 3966 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR056 LTR100LJZPFSR056 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR056 LTR100LJZPFSR056 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR082 LTR100LJZPFSR082 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR082 LTR100LJZPFSR082 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+2.19 EUR
100+1.59 EUR
1000+0.94 EUR
Mindestbestellmenge: 8
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LTR100LJZPFSR027 LTR100LJZPFSR027 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.89 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR027 LTR100LJZPFSR027 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR024 LTR100LJZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR024 LTR100LJZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR011 LTR100LJZPFSR011 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR011 LTR100LJZPFSR011 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
auf Bestellung 3827 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR016 LTR100LJZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100LJZPFSR016 LTR100LJZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SML522BUNWT86 SML522BUNWT86 Rohm Semiconductor datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
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SML522BUNWT86 SML522BUNWT86 Rohm Semiconductor datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE/RED DIFFUSED SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
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RQ6E045SNTR RQ6E045SNTR Rohm Semiconductor datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RQ6E045SNTR RQ6E045SNTR Rohm Semiconductor datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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SH8K39GZETB SH8K39GZETB Rohm Semiconductor datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
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SH8K39GZETB SH8K39GZETB Rohm Semiconductor datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
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SFR03EZPF1212 SFR03EZPF1212 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPF1212 SFR03EZPF1212 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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BD50GC0MEFJ-LBH2 BD50GC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BR24H128FVM-5ACTR datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FVM-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA044TMT2L dta044tebtl-e.pdf
DTA044TMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V VMT3
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DTA044TEBTL datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA044TEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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3000+0.052 EUR
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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59+0.3 EUR
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500+0.084 EUR
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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7+2.71 EUR
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25+1.41 EUR
100+1.1 EUR
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1900 Stücke:
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Anzahl Preis
4+5.37 EUR
10+3.58 EUR
100+2.5 EUR
500+2.17 EUR
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1897 Stücke:
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Anzahl Preis
5+3.54 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 788 Stücke:
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Anzahl Preis
5+3.61 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
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SP8M24HZGTB datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M24HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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RR274EA-400FHTR datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RR274EA-400FHTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SCS230AE2GC11 datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230AE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
auf Bestellung 316 Stücke:
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10+14.7 EUR
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SCS220AGC17 datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 690 Stücke:
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2+11.7 EUR
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SCS212AGC17 datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS212AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
auf Bestellung 955 Stücke:
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2+11.26 EUR
50+6.02 EUR
100+5.51 EUR
500+4.62 EUR
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SCS220KGC17 datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 991 Stücke:
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1+19.64 EUR
10+13.81 EUR
100+12.68 EUR
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SCS220KE2GC11 datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 756 Stücke:
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1+26.15 EUR
30+15.72 EUR
120+13.87 EUR
510+13.77 EUR
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SCS230KE2GC11 datasheet?p=SCS230KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230KE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 344 Stücke:
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SCS220AE2GC11 datasheet?p=SCS220AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 363 Stücke:
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2+17.05 EUR
10+11.74 EUR
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SCS220AEGC11 datasheet?p=SCS220AE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AEGC11
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
auf Bestellung 345 Stücke:
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Anzahl Preis
2+16.63 EUR
10+11.43 EUR
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SDR03EZPD4223 sdr-e.pdf
SDR03EZPD4223
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.044 EUR
10000+0.041 EUR
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SDR03EZPD4223 sdr-e.pdf
SDR03EZPD4223
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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48+0.37 EUR
55+0.32 EUR
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1000+0.053 EUR
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LTR100LJZPFSR062 ltr-low-e.pdf
LTR100LJZPFSR062
Hersteller: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR062 ltr-low-e.pdf
LTR100LJZPFSR062
Hersteller: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
auf Bestellung 3785 Stücke:
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Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
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LTR100LJZPFSR039 ltr-low-e.pdf
LTR100LJZPFSR039
Hersteller: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR039 ltr-low-e.pdf
LTR100LJZPFSR039
Hersteller: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
auf Bestellung 3966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR056 ltr-low-e.pdf
LTR100LJZPFSR056
Hersteller: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR056 ltr-low-e.pdf
LTR100LJZPFSR056
Hersteller: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR082 ltr-low-e.pdf
LTR100LJZPFSR082
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR082 ltr-low-e.pdf
LTR100LJZPFSR082
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.19 EUR
100+1.59 EUR
1000+0.94 EUR
Mindestbestellmenge: 8
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LTR100LJZPFSR027 ltr-low-e.pdf
LTR100LJZPFSR027
Hersteller: Rohm Semiconductor
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.89 EUR
Mindestbestellmenge: 4000
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LTR100LJZPFSR027 ltr-low-e.pdf
LTR100LJZPFSR027
Hersteller: Rohm Semiconductor
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR024 ltr-low-e.pdf
LTR100LJZPFSR024
Hersteller: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR024 ltr-low-e.pdf
LTR100LJZPFSR024
Hersteller: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR011 ltr-low-e.pdf
LTR100LJZPFSR011
Hersteller: Rohm Semiconductor
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR011 ltr-low-e.pdf
LTR100LJZPFSR011
Hersteller: Rohm Semiconductor
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
auf Bestellung 3827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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LTR100LJZPFSR016 ltr-low-e.pdf
LTR100LJZPFSR016
Hersteller: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR016 ltr-low-e.pdf
LTR100LJZPFSR016
Hersteller: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.12 EUR
50+1.56 EUR
100+1.39 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 5
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SML522BUNWT86 datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML522BUNWT86
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
Produkt ist nicht verfügbar
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SML522BUNWT86 datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML522BUNWT86
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.58 EUR
100+1.18 EUR
Mindestbestellmenge: 8
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RQ6E045SNTR datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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RQ6E045SNTR datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
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SH8K39GZETB datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K39GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8K39GZETB datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K39GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
auf Bestellung 2424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.15 EUR
100+2.18 EUR
500+1.76 EUR
1000+1.62 EUR
Mindestbestellmenge: 4
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SFR03EZPF1212 sfr-e.pdf
SFR03EZPF1212
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.023 EUR
Mindestbestellmenge: 5000
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SFR03EZPF1212 sfr-e.pdf
SFR03EZPF1212
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 9997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
100+0.18 EUR
259+0.068 EUR
1000+0.03 EUR
2500+0.026 EUR
Mindestbestellmenge: 91
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BD50GC0MEFJ-LBH2 datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD50GC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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