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SDR03EZPD43R2 SDR03EZPD43R2 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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1000+0.063 EUR
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SDR03EZPD4303 SDR03EZPD4303 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
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SDR03EZPD4303 SDR03EZPD4303 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
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BD9528AMUV-E2 BD9528AMUV-E2 Rohm Semiconductor vqfn032v5050_1-e.pdf Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
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BD9528AMUV-E2 BD9528AMUV-E2 Rohm Semiconductor vqfn032v5050_1-e.pdf Description: IC REG QD BUCK/LNR VQFN032V5050
Number of Outputs: 4
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 3.3V, 100mA
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 1: Adj to 5.5V
Supplier Device Package: VQFN032V5050
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 200kHz ~ 500kHz
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -20°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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SFR18EZPJ111 SFR18EZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ111 SFR18EZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SDR10EZPJ111 SDR10EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR10EZPJ111 SDR10EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SFR01MZPJ111 SFR01MZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ111 SFR01MZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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BU4246F-TR BU4246F-TR Rohm Semiconductor datasheet?p=BU4246F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.6V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4246F-TR BU4246F-TR Rohm Semiconductor datasheet?p=BU4246F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.6V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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R6507KNXC7G R6507KNXC7G Rohm Semiconductor r6507knx-e.pdf Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6507KNXC7G R6507KNXC7G Rohm Semiconductor r6507knx-e.pdf Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6509KNXC7G R6509KNXC7G Rohm Semiconductor datasheet?p=R6509KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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R6511KNXC7G R6511KNXC7G Rohm Semiconductor datasheet?p=R6511KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-220FM, HIGH-SPEED SW
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 320µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6524KNXC7G R6524KNXC7G Rohm Semiconductor datasheet?p=R6524KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 24A TO-220FM, HIGH-SPEED SW
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
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RF202LAM2STR RF202LAM2STR Rohm Semiconductor datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF202LAM2STR RF202LAM2STR Rohm Semiconductor datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF302LAM2STR RF302LAM2STR Rohm Semiconductor datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF302LAM2STR RF302LAM2STR Rohm Semiconductor datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 3A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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BU33JA3DG-CTR BU33JA3DG-CTR Rohm Semiconductor datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BU33JA3DG-CTR BU33JA3DG-CTR Rohm Semiconductor datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BD16852EFV-CE2 BD16852EFV-CE2 Rohm Semiconductor datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD16852EFV-CE2 BD16852EFV-CE2 Rohm Semiconductor datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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SDR10EZPF24R0 SDR10EZPF24R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
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SDR10EZPF24R0 SDR10EZPF24R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
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ML610Q174-448GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC
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BSS670T116 BSS670T116 Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BSS670T116 BSS670T116 Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 287 Stücke:
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22+0.83 EUR
35+0.51 EUR
100+0.32 EUR
Mindestbestellmenge: 22
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CSL1901VW1 CSL1901VW1 Rohm Semiconductor datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.10mm x 0.80mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 630nm
Height (Max): 0.65mm
Current - Test: 2mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 1.8V
Millicandela Rating: 4.8mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSL1901VW1 CSL1901VW1 Rohm Semiconductor datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.10mm x 0.80mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 630nm
Height (Max): 0.65mm
Current - Test: 2mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 1.8V
Millicandela Rating: 4.8mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
37+0.48 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.22 EUR
2000+0.2 EUR
Mindestbestellmenge: 22
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EDZCVFHT2R6.8B EDZCVFHT2R6.8B Rohm Semiconductor edzcvfht2r6.8b-e Description: TVS DIODE 5VWM EMD2
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EDZCVFHT2R6.8B EDZCVFHT2R6.8B Rohm Semiconductor edzcvfht2r6.8b-e Description: TVS DIODE 5VWM EMD2
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RQ3E180BNTB1 RQ3E180BNTB1 Rohm Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Produkt ist nicht verfügbar
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RQ3E180BNTB1 RQ3E180BNTB1 Rohm Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.02 EUR
100+1.5 EUR
500+1.38 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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DTA124XETL DTA124XETL Rohm Semiconductor datasheet?p=DTA124XE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124XEBTL DTA124XEBTL Rohm Semiconductor datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124XEBTL DTA124XEBTL Rohm Semiconductor datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124TCAT116 DTA124TCAT116 Rohm Semiconductor datasheet?p=DTA124TCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 Only
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTA124TCAT116 DTA124TCAT116 Rohm Semiconductor datasheet?p=DTA124TCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 Only
Packaging: Cut Tape (CT)
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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DTA124XU3T106 DTA124XU3T106 Rohm Semiconductor datasheet?p=DTA124XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
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3000+0.05 EUR
6000+0.044 EUR
9000+0.042 EUR
Mindestbestellmenge: 3000
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DTA124XU3T106 DTA124XU3T106 Rohm Semiconductor datasheet?p=DTA124XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 13932 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
104+0.17 EUR
167+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
Mindestbestellmenge: 67
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DTA124EU3T106 DTA124EU3T106 Rohm Semiconductor datasheet?p=DTA124EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124EU3T106 DTA124EU3T106 Rohm Semiconductor datasheet?p=DTA124EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
104+0.17 EUR
167+0.11 EUR
500+0.077 EUR
Mindestbestellmenge: 67
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DTA124XE3HZGTL DTA124XE3HZGTL Rohm Semiconductor datasheet?p=DTA124XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.096 EUR
Mindestbestellmenge: 3000
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DTA124XE3HZGTL DTA124XE3HZGTL Rohm Semiconductor datasheet?p=DTA124XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
63+0.28 EUR
101+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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DTA124EE3HZGTL DTA124EE3HZGTL Rohm Semiconductor datasheet?p=DTA124EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124EE3HZGTL DTA124EE3HZGTL Rohm Semiconductor datasheet?p=DTA124EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
63+0.28 EUR
101+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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SMLEN3EC8TT86 SMLEN3EC8TT86 Rohm Semiconductor datasheet?p=SMLEN3EC8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.40mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Produkt ist nicht verfügbar
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SMLEN3EC8TT86 SMLEN3EC8TT86 Rohm Semiconductor datasheet?p=SMLEN3EC8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.40mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3679 Stücke:
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14+1.27 EUR
20+0.89 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.51 EUR
2000+0.48 EUR
Mindestbestellmenge: 14
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SDR03EZPD4530 SDR03EZPD4530 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 453 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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5000+0.044 EUR
10000+0.041 EUR
Mindestbestellmenge: 5000
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SDR03EZPD4530 SDR03EZPD4530 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 453 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
auf Bestellung 10000 Stücke:
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46+0.39 EUR
55+0.32 EUR
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139+0.13 EUR
500+0.077 EUR
1000+0.053 EUR
Mindestbestellmenge: 46
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RB521ZS-30T2R RB521ZS-30T2R Rohm Semiconductor Taping_GMD2_T2R-e.pdf Description: DIODE SCHOTTKY 30V 100MA GMD2
auf Bestellung 9 Stücke:
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RB521ZS-30ZT2R RB521ZS-30ZT2R Rohm Semiconductor rb521zs-30t2r-e.pdf Description: DIODE SCHOTTKY 100MA 8SMD
Produkt ist nicht verfügbar
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RB521ZS-30T2R_1 RB521ZS-30T2R_1 Rohm Semiconductor rb521zs-30t2r-e.pdf Description: DIODE SCHOTTKY 30V 100MA GMD2
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RB521ZS-309ST2R RB521ZS-309ST2R Rohm Semiconductor Description: DIODE SCHOTTKY 100MA 8SMD
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RB521ZS-308EPT2R RB521ZS-308EPT2R Rohm Semiconductor Description: DIODE SCHOTTKY 100MA 8SMD
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RB521ZS-306EPT2R RB521ZS-306EPT2R Rohm Semiconductor Description: DIODE SCHOTTKY 100MA 8SMD
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SDR03EZPD43R2 sdr-e.pdf
SDR03EZPD43R2
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
39+0.46 EUR
46+0.39 EUR
117+0.15 EUR
1000+0.063 EUR
2500+0.058 EUR
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SDR03EZPD4303 sdr-e.pdf
SDR03EZPD4303
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
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SDR03EZPD4303 sdr-e.pdf
SDR03EZPD4303
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
auf Bestellung 9897 Stücke:
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Anzahl Preis
44+0.4 EUR
50+0.35 EUR
128+0.14 EUR
1000+0.058 EUR
2500+0.053 EUR
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BD9528AMUV-E2 vqfn032v5050_1-e.pdf
BD9528AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
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BD9528AMUV-E2 vqfn032v5050_1-e.pdf
BD9528AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Number of Outputs: 4
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 3.3V, 100mA
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 1: Adj to 5.5V
Supplier Device Package: VQFN032V5050
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 200kHz ~ 500kHz
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -20°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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SFR18EZPJ111 sfr-e.pdf
SFR18EZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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Anzahl Preis
5000+0.038 EUR
10000+0.035 EUR
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SFR18EZPJ111 sfr-e.pdf
SFR18EZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
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Anzahl Preis
53+0.33 EUR
64+0.28 EUR
162+0.11 EUR
1000+0.045 EUR
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SDR10EZPJ111 sdr-e.pdf
SDR10EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.05 EUR
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SDR10EZPJ111 sdr-e.pdf
SDR10EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9973 Stücke:
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Anzahl Preis
42+0.42 EUR
49+0.36 EUR
124+0.14 EUR
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SFR01MZPJ111 sfr-e.pdf
SFR01MZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
10000+0.021 EUR
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SFR01MZPJ111 sfr-e.pdf
SFR01MZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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Anzahl Preis
91+0.19 EUR
100+0.18 EUR
259+0.068 EUR
1000+0.03 EUR
2500+0.026 EUR
5000+0.023 EUR
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BU4246F-TR datasheet?p=BU4246F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4246F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.6V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4246F-TR datasheet?p=BU4246F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4246F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.6V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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R6507KNXC7G r6507knx-e.pdf
R6507KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6507KNXC7G r6507knx-e.pdf
R6507KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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4+4.51 EUR
10+4.05 EUR
100+3.26 EUR
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R6509KNXC7G datasheet?p=R6509KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 3838 Stücke:
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5+4.33 EUR
50+2.18 EUR
100+2.04 EUR
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R6511KNXC7G datasheet?p=R6511KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 320µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 3984 Stücke:
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4+5.21 EUR
50+4.13 EUR
100+3.54 EUR
500+3.15 EUR
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R6524KNXC7G datasheet?p=R6524KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 990 Stücke:
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3+8.73 EUR
50+6.92 EUR
100+5.93 EUR
500+5.27 EUR
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RF202LAM2STR datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF202LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF202LAM2STR datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF202LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1854 Stücke:
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Anzahl Preis
15+1.21 EUR
22+0.81 EUR
100+0.55 EUR
500+0.42 EUR
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RF302LAM2STR datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF302LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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3000+0.39 EUR
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RF302LAM2STR datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF302LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 5237 Stücke:
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Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
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BU33JA3DG-CTR datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA3DG-CTR
Hersteller: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BU33JA3DG-CTR datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA3DG-CTR
Hersteller: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 1318 Stücke:
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Anzahl Preis
8+2.29 EUR
13+1.41 EUR
25+1.17 EUR
100+0.91 EUR
250+0.78 EUR
500+0.7 EUR
1000+0.63 EUR
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BD16852EFV-CE2 datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD16852EFV-CE2
Hersteller: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD16852EFV-CE2 datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD16852EFV-CE2
Hersteller: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.25 EUR
10+7.45 EUR
25+6.46 EUR
100+5.35 EUR
250+4.8 EUR
500+4.47 EUR
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SDR10EZPF24R0 sdr-e.pdf
SDR10EZPF24R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.064 EUR
Mindestbestellmenge: 5000
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SDR10EZPF24R0 sdr-e.pdf
SDR10EZPF24R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 9445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
84+0.21 EUR
122+0.15 EUR
141+0.12 EUR
500+0.092 EUR
1000+0.081 EUR
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ML610Q174-448GAZWAAL ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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BSS670T116 datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS670T116
Hersteller: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSS670T116 datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS670T116
Hersteller: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
35+0.51 EUR
100+0.32 EUR
Mindestbestellmenge: 22
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CSL1901VW1 datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901VW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.10mm x 0.80mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 630nm
Height (Max): 0.65mm
Current - Test: 2mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 1.8V
Millicandela Rating: 4.8mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CSL1901VW1 datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901VW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.10mm x 0.80mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 630nm
Height (Max): 0.65mm
Current - Test: 2mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 1.8V
Millicandela Rating: 4.8mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
37+0.48 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.22 EUR
2000+0.2 EUR
Mindestbestellmenge: 22
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EDZCVFHT2R6.8B edzcvfht2r6.8b-e
EDZCVFHT2R6.8B
Hersteller: Rohm Semiconductor
Description: TVS DIODE 5VWM EMD2
Produkt ist nicht verfügbar
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EDZCVFHT2R6.8B edzcvfht2r6.8b-e
EDZCVFHT2R6.8B
Hersteller: Rohm Semiconductor
Description: TVS DIODE 5VWM EMD2
Produkt ist nicht verfügbar
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RQ3E180BNTB1 datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E180BNTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Produkt ist nicht verfügbar
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RQ3E180BNTB1 datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E180BNTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.02 EUR
100+1.5 EUR
500+1.38 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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DTA124XETL datasheet?p=DTA124XE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124XEBTL datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124XEBTL datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124TCAT116 datasheet?p=DTA124TCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124TCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 Only
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTA124TCAT116 datasheet?p=DTA124TCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124TCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 Only
Packaging: Cut Tape (CT)
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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DTA124XU3T106 datasheet?p=DTA124XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.044 EUR
9000+0.042 EUR
Mindestbestellmenge: 3000
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DTA124XU3T106 datasheet?p=DTA124XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 13932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
167+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
Mindestbestellmenge: 67
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DTA124EU3T106 datasheet?p=DTA124EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124EU3T106 datasheet?p=DTA124EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EU3T106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
167+0.11 EUR
500+0.077 EUR
Mindestbestellmenge: 67
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DTA124XE3HZGTL datasheet?p=DTA124XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
Mindestbestellmenge: 3000
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DTA124XE3HZGTL datasheet?p=DTA124XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
63+0.28 EUR
101+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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DTA124EE3HZGTL datasheet?p=DTA124EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA124EE3HZGTL datasheet?p=DTA124EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
63+0.28 EUR
101+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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SMLEN3EC8TT86 datasheet?p=SMLEN3EC8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLEN3EC8TT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.40mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Produkt ist nicht verfügbar
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SMLEN3EC8TT86 datasheet?p=SMLEN3EC8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLEN3EC8TT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.40mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.89 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.51 EUR
2000+0.48 EUR
Mindestbestellmenge: 14
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SDR03EZPD4530 sdr-e.pdf
SDR03EZPD4530
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 453 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.044 EUR
10000+0.041 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPD4530 sdr-e.pdf
SDR03EZPD4530
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 453 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
55+0.32 EUR
104+0.17 EUR
139+0.13 EUR
500+0.077 EUR
1000+0.053 EUR
Mindestbestellmenge: 46
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RB521ZS-30T2R Taping_GMD2_T2R-e.pdf
RB521ZS-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA GMD2
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
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RB521ZS-30ZT2R rb521zs-30t2r-e.pdf
RB521ZS-30ZT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100MA 8SMD
Produkt ist nicht verfügbar
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RB521ZS-30T2R_1 rb521zs-30t2r-e.pdf
RB521ZS-30T2R_1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA GMD2
Produkt ist nicht verfügbar
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RB521ZS-309ST2R
RB521ZS-309ST2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100MA 8SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB521ZS-308EPT2R
RB521ZS-308EPT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100MA 8SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB521ZS-306EPT2R
RB521ZS-306EPT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100MA 8SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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