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RBE2EA20ATR RBE2EA20ATR Rohm Semiconductor rbe2ea20atr-e.pdf Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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500+0.64 EUR
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RB551VM-40TE-17 RB551VM-40TE-17 Rohm Semiconductor datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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BR25G320FVM-3GTR BR25G320FVM-3GTR Rohm Semiconductor datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
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BR25G320FVM-3GTR BR25G320FVM-3GTR Rohm Semiconductor datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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250+0.93 EUR
500+0.9 EUR
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R6020KNZC17 R6020KNZC17 Rohm Semiconductor datasheet?p=R6020KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
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R6020ENZ4C13 R6020ENZ4C13 Rohm Semiconductor datasheet?p=R6020ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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R6020JNZC17 R6020JNZC17 Rohm Semiconductor datasheet?p=R6020JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
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R6020ENZC17 R6020ENZC17 Rohm Semiconductor datasheet?p=R6020ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6020FNJTL R6020FNJTL Rohm Semiconductor datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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R6020KNZ1C9 R6020KNZ1C9 Rohm Semiconductor TO247_Inner_Structure.pdf Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6020JNZC8 R6020JNZC8 Rohm Semiconductor Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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R6020ANZFL1C8 R6020ANZFL1C8 Rohm Semiconductor R6020ANZ.pdf Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6020ANZ8U7C8 R6020ANZ8U7C8 Rohm Semiconductor R6020ANZ.pdf Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
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R6020ENZM12C8 Rohm Semiconductor r6020enzc17-e.pdf Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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RB095T-90NZC9 RB095T-90NZC9 Rohm Semiconductor datasheet?p=RB095T-90NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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100+2.61 EUR
500+2.2 EUR
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BD6346FV-E2 BD6346FV-E2 Rohm Semiconductor bd6346fv-e.pdf Description: IC MOTOR DRIVER 20SSOP
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BD6346FV-E2 BD6346FV-E2 Rohm Semiconductor bd6346fv-e.pdf Description: IC MOTOR DRIVER 20SSOP
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BD63441AFU-E2 BD63441AFU-E2 Rohm Semiconductor bd63441afu-e Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
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BD63441AFU-E2 BD63441AFU-E2 Rohm Semiconductor bd63441afu-e Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
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BD6345FV-E2 BD6345FV-E2 Rohm Semiconductor BD6345FV.pdf Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
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BD8621EFV-E2 BD8621EFV-E2 Rohm Semiconductor BD8621EFV.pdf Description: IC REG CTRLR TV 1OUT HTSSOP-B20
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BD868D0MUF-CE2 BD868D0MUF-CE2 Rohm Semiconductor datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
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BD868D0MUF-CE2 BD868D0MUF-CE2 Rohm Semiconductor datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
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BD86123AEFJ-E2 BD86123AEFJ-E2 Rohm Semiconductor BD86123AEFJ.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD8649EFV-E2 BD8649EFV-E2 Rohm Semiconductor BD8649EFV.pdf Description: IC REG BUCK ADJ 3A 20HTSSOP-B
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BD8668GW-E2 BD8668GW-E2 Rohm Semiconductor datasheet?p=BD8668GW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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R6511ENJTL R6511ENJTL Rohm Semiconductor datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511ENJTL R6511ENJTL Rohm Semiconductor datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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RB061QS-20T18R RB061QS-20T18R Rohm Semiconductor datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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RB061QS-20T18R RB061QS-20T18R Rohm Semiconductor datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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ML610Q172-101GAZWAX Rohm Semiconductor ML610Q172-73_12-7-17.pdf Description: IC
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BD5423MUV-E2 BD5423MUV-E2 Rohm Semiconductor Description: IC AMP D STEREO 17W VQFN048V7070
Supplier Device Package: VQFN048V7070
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 16.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
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BDE1204G-TR BDE1204G-TR Rohm Semiconductor BDE1204G.pdf Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
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BDE1250G-TR BDE1250G-TR Rohm Semiconductor Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Switching Temperature: 125°C
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Part Status: Obsolete
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Voltage - Supply: 2.9 V ~ 5.5 V
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
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BDE1000G-TR BDE1000G-TR Rohm Semiconductor Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply: 2.9 V ~ 5.5 V
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Switching Temperature: 100°C
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SMF17VTFTR SMF17VTFTR Rohm Semiconductor datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF17VTFTR SMF17VTFTR Rohm Semiconductor datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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RB098BM100FHTL RB098BM100FHTL Rohm Semiconductor datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
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RB098BM100FHTL RB098BM100FHTL Rohm Semiconductor datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BD7685FJ-LBE2 BD7685FJ-LBE2 Rohm Semiconductor datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH QUASI RES CTRL
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
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BD7685FJ-LBE2 BD7685FJ-LBE2 Rohm Semiconductor datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH QUASI RES CTRL
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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RB500SM-30T2R RB500SM-30T2R Rohm Semiconductor datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB500SM-30T2R RB500SM-30T2R Rohm Semiconductor datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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BR93G66NUX-3BTTR BR93G66NUX-3BTTR Rohm Semiconductor datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT VSON008X2030
DigiKey Programmable: Not Verified
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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BR93G66NUX-3BTTR BR93G66NUX-3BTTR Rohm Semiconductor datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT VSON008X2030
DigiKey Programmable: Not Verified
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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BR93G46NUX-3TTR BR93G46NUX-3TTR Rohm Semiconductor datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 1KBIT VSON008X2030
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
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BR93G46NUX-3TTR BR93G46NUX-3TTR Rohm Semiconductor datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 1KBIT VSON008X2030
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 1Kbit
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RBE2EA20ATR rbe2ea20atr-e.pdf
RBE2EA20ATR
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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RB551VM-40TE-17 datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB551VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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BR25G320FVM-3GTR datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25G320FVM-3GTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR25G320FVM-3GTR datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25G320FVM-3GTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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R6020KNZC17 datasheet?p=R6020KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
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R6020ENZ4C13 datasheet?p=R6020ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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R6020JNZC17 datasheet?p=R6020JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020JNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
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3+7.12 EUR
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R6020ENZC17 datasheet?p=R6020ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 296 Stücke:
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R6020FNJTL datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6020KNZ1C9 TO247_Inner_Structure.pdf
R6020KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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R6020JNZC8
R6020JNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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2+16.9 EUR
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R6020ANZFL1C8 R6020ANZ.pdf
R6020ANZFL1C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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R6020ANZ8U7C8 R6020ANZ.pdf
R6020ANZ8U7C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Produkt ist nicht verfügbar
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R6020ENZM12C8 r6020enzc17-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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RB095T-90NZC9 datasheet?p=RB095T-90NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-90NZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1000 Stücke:
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6+3.94 EUR
50+3.17 EUR
100+2.61 EUR
500+2.2 EUR
1000+1.87 EUR
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BD6346FV-E2 bd6346fv-e.pdf
BD6346FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Produkt ist nicht verfügbar
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BD6346FV-E2 bd6346fv-e.pdf
BD6346FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
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3+7.83 EUR
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BD63441AFU-E2 bd63441afu-e
BD63441AFU-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Produkt ist nicht verfügbar
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BD63441AFU-E2 bd63441afu-e
BD63441AFU-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
auf Bestellung 4812 Stücke:
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3+7.08 EUR
10+6.34 EUR
25+6 EUR
100+5.2 EUR
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1000+3.74 EUR
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BD6345FV-E2 BD6345FV.pdf
BD6345FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
Produkt ist nicht verfügbar
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BD8621EFV-E2 BD8621EFV.pdf
BD8621EFV-E2
Hersteller: Rohm Semiconductor
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
Produkt ist nicht verfügbar
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BD868D0MUF-CE2 datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD868D0MUF-CE2
Hersteller: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD868D0MUF-CE2 datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD868D0MUF-CE2
Hersteller: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1950 Stücke:
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4+6.94 EUR
10+5.25 EUR
25+4.82 EUR
100+4.36 EUR
250+4.13 EUR
500+4 EUR
1000+3.88 EUR
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BD86123AEFJ-E2 BD86123AEFJ.pdf
BD86123AEFJ-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD8649EFV-E2 BD8649EFV.pdf
BD8649EFV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
Produkt ist nicht verfügbar
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BD8668GW-E2 datasheet?p=BD8668GW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8668GW-E2
Hersteller: Rohm Semiconductor
Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6511ENJTL datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
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R6511ENJTL datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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3+7.64 EUR
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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2500+2.19 EUR
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 3267 Stücke:
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4+6.2 EUR
10+4.43 EUR
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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3000+0.12 EUR
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 6000 Stücke:
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3000+0.37 EUR
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 7577 Stücke:
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
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RB061QS-20T18R datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB061QS-20T18R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB061QS-20T18R datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB061QS-20T18R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 10333 Stücke:
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ML610Q172-101GAZWAX ML610Q172-73_12-7-17.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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BD5423MUV-E2
BD5423MUV-E2
Hersteller: Rohm Semiconductor
Description: IC AMP D STEREO 17W VQFN048V7070
Supplier Device Package: VQFN048V7070
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 16.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BDE1204G-TR BDE1204G.pdf
BDE1204G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
Produkt ist nicht verfügbar
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BDE1250G-TR
BDE1250G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Switching Temperature: 125°C
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Part Status: Obsolete
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Voltage - Supply: 2.9 V ~ 5.5 V
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BDE1000G-TR
BDE1000G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply: 2.9 V ~ 5.5 V
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Switching Temperature: 100°C
Produkt ist nicht verfügbar
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SMF17VTFTR datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF17VTFTR
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMF17VTFTR datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF17VTFTR
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 2950 Stücke:
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17+1.26 EUR
20+1.07 EUR
100+0.8 EUR
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RB098BM100FHTL datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB098BM100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 2500 Stücke:
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2500+0.79 EUR
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RB098BM100FHTL datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB098BM100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3656 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
14+1.61 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.88 EUR
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+1.96 EUR
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BD7685FJ-LBE2 datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7685FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH QUASI RES CTRL
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
auf Bestellung 2500 Stücke:
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2500+2.17 EUR
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BD7685FJ-LBE2 datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7685FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH QUASI RES CTRL
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2492 Stücke:
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AnzahlPrivatkunde
4+6.15 EUR
10+3.92 EUR
25+3.32 EUR
100+2.65 EUR
250+2.33 EUR
500+2.13 EUR
1000+1.96 EUR
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RB500SM-30T2R datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB500SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 8000 Stücke:
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8000+0.07 EUR
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RB500SM-30T2R datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB500SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 12085 Stücke:
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39+0.55 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.11 EUR
2000+0.094 EUR
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BR93G66NUX-3BTTR datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66NUX-3BTTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
DigiKey Programmable: Not Verified
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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4000+0.3 EUR
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BR93G66NUX-3BTTR datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66NUX-3BTTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
DigiKey Programmable: Not Verified
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
23+0.93 EUR
25+0.89 EUR
50+0.86 EUR
100+0.82 EUR
250+0.79 EUR
500+0.76 EUR
1000+0.74 EUR
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BR93G46NUX-3TTR datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G46NUX-3TTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT VSON008X2030
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
4000+0.68 EUR
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BR93G46NUX-3TTR datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G46NUX-3TTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT VSON008X2030
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 1Kbit
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
23+0.95 EUR
25+0.88 EUR
100+0.77 EUR
500+0.76 EUR
1000+0.74 EUR
Mindestbestellmenge: 22 Stücke
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