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BA82901YF-CE2 BA82901YF-CE2 Rohm Semiconductor datasheet?p=BA82901YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Voltage - Input Offset (Max): 5mV @ 5V
Current - Quiescent (Max): 2mA
Propagation Delay (Max): 400ns (Typ)
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
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BA82901YF-CE2 BA82901YF-CE2 Rohm Semiconductor datasheet?p=BA82901YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 5mV @ 5V
Current - Quiescent (Max): 2mA
Propagation Delay (Max): 400ns (Typ)
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
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500+1.99 EUR
1000+1.65 EUR
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SML-D12L8WT86 SML-D12L8WT86 Rohm Semiconductor datasheet?p=SML-D12L8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.20mm x 0.80mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 635nm
Height (Max): 0.65mm
Current - Test: 20mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 16mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
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SML-D12L8WT86 SML-D12L8WT86 Rohm Semiconductor datasheet?p=SML-D12L8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.80mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 635nm
Height (Max): 0.65mm
Current - Test: 20mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 16mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
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1000+0.15 EUR
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LM2904EYFVM-CTR LM2904EYFVM-CTR Rohm Semiconductor datasheet?p=LM2904EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
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LM2904EYFVM-CTR LM2904EYFVM-CTR Rohm Semiconductor datasheet?p=LM2904EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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LM2904EYF-CE2 LM2904EYF-CE2 Rohm Semiconductor datasheet?p=LM2904EYF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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LM2904EYF-CE2 LM2904EYF-CE2 Rohm Semiconductor datasheet?p=LM2904EYF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Part Status: Active
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
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BD00HA3MEFJ-ME2 BD00HA3MEFJ-ME2 Rohm Semiconductor bdxxha3mefj-m-e.pdf Description: IC REG LIN POS ADJ 300MA 8HTSOP
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BD00HA5MEFJ-ME2 BD00HA5MEFJ-ME2 Rohm Semiconductor bdxxha5mefj-m-e.pdf Description: IC REG LIN POS ADJ 500MA 8HTSOP
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BU16024KV-E2 BU16024KV-E2 Rohm Semiconductor BU160xxKV.pdf Description: IC SWITCH HDMI VQFP48
Control Interface: I2C
Part Status: Not For New Designs
Supplier Device Package: 48-VQFPC (7x7)
Standards: HDMI 1.3a
Applications: Consumer Video
Voltage - Supply: 3V ~ 3.6V
Function: Switch
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
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SDR03EZPD30R0 SDR03EZPD30R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
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SDR03EZPD30R0 SDR03EZPD30R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
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SDR03EZPD3003 SDR03EZPD3003 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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SDR03EZPD3003 SDR03EZPD3003 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
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173+0.12 EUR
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LM2903EYFJ-CE2 LM2903EYFJ-CE2 Rohm Semiconductor datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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LM2903EYFJ-CE2 LM2903EYFJ-CE2 Rohm Semiconductor datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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10+2.56 EUR
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100+2 EUR
250+1.87 EUR
500+1.65 EUR
1000+1.31 EUR
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LM2903EYFVM-CTR LM2903EYFVM-CTR Rohm Semiconductor datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM2903EYFVM-CTR LM2903EYFVM-CTR Rohm Semiconductor datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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25+2.59 EUR
100+2.13 EUR
250+1.99 EUR
500+1.76 EUR
1000+1.39 EUR
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LTR100JZPF2202 Rohm Semiconductor ltr-e.pdf Description: HIGH POWER CHIP RESISTOR: HIGH-P
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LTR100JZPF2202 Rohm Semiconductor ltr-e.pdf Description: HIGH POWER CHIP RESISTOR: HIGH-P
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ML620Q134B-NNNTD07GL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q136B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q135B-NNNTD07GL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q135B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q134B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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R6504KNJTL R6504KNJTL Rohm Semiconductor datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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R6504KNJTL R6504KNJTL Rohm Semiconductor datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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R6504ENJTL R6504ENJTL Rohm Semiconductor datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6504ENJTL R6504ENJTL Rohm Semiconductor datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
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R6515KNJTL R6515KNJTL Rohm Semiconductor datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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R6515KNJTL R6515KNJTL Rohm Semiconductor datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R6507KNJTL R6507KNJTL Rohm Semiconductor datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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R6507KNJTL R6507KNJTL Rohm Semiconductor datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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R6509ENJTL R6509ENJTL Rohm Semiconductor datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6509ENJTL R6509ENJTL Rohm Semiconductor datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SFR01MZPJ150 SFR01MZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ150 SFR01MZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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100+0.21 EUR
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SFR03EZPJ150 SFR03EZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ150 SFR03EZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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MNR04MRAPJ150 MNR04MRAPJ150 Rohm Semiconductor MNR04_dim1.jpg Description: RES ARRAY 4 RES 15 OHM 0804
Number of Resistors: 4
Height - Seated (Max): 0.020" (0.50mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0804, Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Power Per Element: 62.5mW
Tolerance: ±5%
Resistance (Ohms): 15
Packaging: Cut Tape (CT)
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RB168VAM-30TR RB168VAM-30TR Rohm Semiconductor rb168vam-30tr-e.pdf Description: DIODE SCHOTTKY 30V 1A TUMD2M
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RB168VAM-30TR RB168VAM-30TR Rohm Semiconductor rb168vam-30tr-e.pdf Description: DIODE SCHOTTKY 30V 1A TUMD2M
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SDR10EZPJ2R4 SDR10EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
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SDR10EZPJ2R4 SDR10EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
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SDR03EZPJ2R4 SDR03EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPJ2R4 SDR03EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SFR03EZPJ2R4 SFR03EZPJ2R4 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ2R4 SFR03EZPJ2R4 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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RBR20T60ANZC9 RBR20T60ANZC9 Rohm Semiconductor datasheet?p=RBR20T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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RBQ10RSM65BTL1 RBQ10RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10RSM65BTL1 RBQ10RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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RBQ10RSM65BTFTL1 RBQ10RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RBQ10RSM65BTFTL1 RBQ10RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3839 Stücke:
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RBQ5RSM65BTL1 RBQ5RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RBQ5RSM65BTL1 RBQ5RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3967 Stücke:
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RBQ3RSM65BTFTL1 RBQ3RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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4000+0.84 EUR
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RBQ3RSM65BTFTL1 RBQ3RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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500+1.09 EUR
1000+0.89 EUR
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RBQ5RSM65BTFTL1 RBQ5RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.84 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBQ5RSM65BTFTL1 RBQ5RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
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11+2.03 EUR
13+1.65 EUR
100+1.3 EUR
500+1.09 EUR
1000+0.89 EUR
2000+0.84 EUR
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BA82901YF-CE2 datasheet?p=BA82901YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA82901YF-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Voltage - Input Offset (Max): 5mV @ 5V
Current - Quiescent (Max): 2mA
Propagation Delay (Max): 400ns (Typ)
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
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BA82901YF-CE2 datasheet?p=BA82901YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA82901YF-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 5mV @ 5V
Current - Quiescent (Max): 2mA
Propagation Delay (Max): 400ns (Typ)
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
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SML-D12L8WT86 datasheet?p=SML-D12L8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D12L8WT86
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Lens Size: 1.20mm x 0.80mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 635nm
Height (Max): 0.65mm
Current - Test: 20mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 16mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
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3000+0.15 EUR
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SML-D12L8WT86 datasheet?p=SML-D12L8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D12L8WT86
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Color: Red
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.80mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 0603
Wavelength - Dominant: 635nm
Height (Max): 0.65mm
Current - Test: 20mA
Lens Color: White
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 16mcd
Mounting Type: Surface Mount
Size / Dimension: 1.60mm L x 0.80mm W
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82+0.26 EUR
93+0.23 EUR
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1000+0.15 EUR
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LM2904EYFVM-CTR datasheet?p=LM2904EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2904EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Produkt ist nicht verfügbar
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LM2904EYFVM-CTR datasheet?p=LM2904EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2904EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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5+4.38 EUR
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25+2.31 EUR
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LM2904EYF-CE2 datasheet?p=LM2904EYF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2904EYF-CE2
Hersteller: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM2904EYF-CE2 datasheet?p=LM2904EYF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2904EYF-CE2
Hersteller: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Part Status: Active
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 500 kHz
Slew Rate: 0.2V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 150°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
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5+4.38 EUR
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BD00HA3MEFJ-ME2 bdxxha3mefj-m-e.pdf
BD00HA3MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 300MA 8HTSOP
Produkt ist nicht verfügbar
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BD00HA5MEFJ-ME2 bdxxha5mefj-m-e.pdf
BD00HA5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ 500MA 8HTSOP
Produkt ist nicht verfügbar
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BU16024KV-E2 BU160xxKV.pdf
BU16024KV-E2
Hersteller: Rohm Semiconductor
Description: IC SWITCH HDMI VQFP48
Control Interface: I2C
Part Status: Not For New Designs
Supplier Device Package: 48-VQFPC (7x7)
Standards: HDMI 1.3a
Applications: Consumer Video
Voltage - Supply: 3V ~ 3.6V
Function: Switch
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR03EZPD30R0 sdr-e.pdf
SDR03EZPD30R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
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SDR03EZPD30R0 sdr-e.pdf
SDR03EZPD30R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
auf Bestellung 9380 Stücke:
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56+0.38 EUR
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SDR03EZPD3003 sdr-e.pdf
SDR03EZPD3003
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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5000+0.062 EUR
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SDR03EZPD3003 sdr-e.pdf
SDR03EZPD3003
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
auf Bestellung 8620 Stücke:
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56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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LM2903EYFJ-CE2 datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
LM2903EYFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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2500+1.21 EUR
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LM2903EYFJ-CE2 datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
LM2903EYFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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8+2.87 EUR
10+2.56 EUR
25+2.43 EUR
100+2 EUR
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500+1.65 EUR
1000+1.31 EUR
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LM2903EYFVM-CTR datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2903EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM2903EYFVM-CTR datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2903EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2990 Stücke:
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7+3.06 EUR
10+2.74 EUR
25+2.59 EUR
100+2.13 EUR
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500+1.76 EUR
1000+1.39 EUR
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LTR100JZPF2202 ltr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Produkt ist nicht verfügbar
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LTR100JZPF2202 ltr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
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ML620Q134B-NNNTD07GL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q136B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q135B-NNNTD07GL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q135B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q134B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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R6504KNJTL datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6504KNJTL datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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5+4.38 EUR
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R6504ENJTL datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6504ENJTL datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 92 Stücke:
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5+4.38 EUR
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R6515KNJTL datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6515KNJTL datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 80 Stücke:
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2+12.48 EUR
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R6507KNJTL datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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R6507KNJTL datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 80 Stücke:
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3+8.27 EUR
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R6509ENJTL datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6509ENJTL datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 88 Stücke:
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4+6.28 EUR
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SFR01MZPJ150 sfr-e.pdf
SFR01MZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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10000+0.023 EUR
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SFR01MZPJ150 sfr-e.pdf
SFR01MZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
110+0.19 EUR
289+0.073 EUR
1000+0.032 EUR
2500+0.027 EUR
5000+0.025 EUR
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SFR03EZPJ150 sfr-e.pdf
SFR03EZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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5000+0.025 EUR
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SFR03EZPJ150 sfr-e.pdf
SFR03EZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 9790 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
110+0.19 EUR
289+0.073 EUR
1000+0.032 EUR
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MNR04MRAPJ150 MNR04_dim1.jpg
MNR04MRAPJ150
Hersteller: Rohm Semiconductor
Description: RES ARRAY 4 RES 15 OHM 0804
Number of Resistors: 4
Height - Seated (Max): 0.020" (0.50mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0804, Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Power Per Element: 62.5mW
Tolerance: ±5%
Resistance (Ohms): 15
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RB168VAM-30TR rb168vam-30tr-e.pdf
RB168VAM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Produkt ist nicht verfügbar
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RB168VAM-30TR rb168vam-30tr-e.pdf
RB168VAM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
auf Bestellung 695 Stücke:
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28+0.77 EUR
34+0.62 EUR
100+0.42 EUR
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SDR10EZPJ2R4 sdr-e.pdf
SDR10EZPJ2R4
Hersteller: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
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5000+0.054 EUR
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SDR10EZPJ2R4 sdr-e.pdf
SDR10EZPJ2R4
Hersteller: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
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46+0.46 EUR
53+0.39 EUR
136+0.15 EUR
1000+0.064 EUR
2500+0.06 EUR
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SDR03EZPJ2R4 sdr-e.pdf
SDR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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AnzahlPrivatkunde
5000+0.025 EUR
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SDR03EZPJ2R4 sdr-e.pdf
SDR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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100+0.21 EUR
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SFR03EZPJ2R4 sfr-e.pdf
SFR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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5000+0.024 EUR
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SFR03EZPJ2R4 sfr-e.pdf
SFR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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112+0.19 EUR
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RBR20T60ANZC9 datasheet?p=RBR20T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20T60ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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RBQ10RSM65BTL1 datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10RSM65BTL1 datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 1476 Stücke:
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7+3.27 EUR
11+2.08 EUR
100+1.39 EUR
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RBQ10RSM65BTFTL1 datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10RSM65BTFTL1 datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3839 Stücke:
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6+3.53 EUR
10+2.25 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.09 EUR
2000+1.01 EUR
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RBQ5RSM65BTL1 datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ5RSM65BTL1 datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3967 Stücke:
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13+1.68 EUR
16+1.38 EUR
100+1.07 EUR
500+0.92 EUR
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2000+0.7 EUR
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RBQ3RSM65BTFTL1 datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.84 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBQ3RSM65BTFTL1 datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
13+1.65 EUR
100+1.3 EUR
500+1.09 EUR
1000+0.89 EUR
2000+0.84 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBQ5RSM65BTFTL1 datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.84 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBQ5RSM65BTFTL1 datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
13+1.65 EUR
100+1.3 EUR
500+1.09 EUR
1000+0.89 EUR
2000+0.84 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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